{"id":2451,"date":"2026-05-06T05:42:15","date_gmt":"2026-05-06T05:42:15","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?p=2451"},"modified":"2026-05-06T05:45:22","modified_gmt":"2026-05-06T05:45:22","slug":"sic-industry-chain-key-segments-and-process-characteristics","status":"publish","type":"post","link":"https:\/\/www.zmsh-semitech.com\/fr\/sic-industry-chain-key-segments-and-process-characteristics\/","title":{"rendered":"Cha\u00eene industrielle du SiC - Segments cl\u00e9s et caract\u00e9ristiques des processus (Original Deep-Dive)"},"content":{"rendered":"<p>Le carbure de silicium (SiC) est devenu un mat\u00e9riau essentiel de l'\u00e9lectronique de puissance de la prochaine g\u00e9n\u00e9ration, largement utilis\u00e9 dans les v\u00e9hicules \u00e9lectriques, les onduleurs photovolta\u00efques et les syst\u00e8mes d'alimentation \u00e0 haute tension. Toutefois, contrairement \u00e0 la technologie mature du silicium, la cha\u00eene industrielle du carbure de silicium est encore tr\u00e8s complexe, \u00e0 forte intensit\u00e9 de capital et sensible aux processus.<\/p>\n\n\n\n<p>Cet article fournit une vue d'ensemble structur\u00e9e de la cha\u00eene industrielle SiC, des principales \u00e9tapes de fabrication, des d\u00e9fis li\u00e9s aux processus et des syst\u00e8mes d'\u00e9quipements critiques, sur la base des pratiques d'ing\u00e9nierie industrielle.<\/p>\n\n\n\n<h1 class=\"wp-block-heading\">1. Vue d'ensemble de la cha\u00eene industrielle du SiC<\/h1>\n\n\n\n<p>La cha\u00eene industrielle des dispositifs SiC est similaire \u00e0 celle des semi-conducteurs au silicium traditionnels et peut \u00eatre divis\u00e9e en cinq segments principaux :<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">1. Substrat monocristallin (Substrat)<\/h2>\n\n\n\n<p>Comprend :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Synth\u00e8se de poudre de SiC de haute puret\u00e9<\/li>\n\n\n\n<li>Croissance de monocristaux<\/li>\n\n\n\n<li>Tranchage, broyage et polissage des plaquettes de silicium<\/li>\n<\/ul>\n\n\n\n<p>\ud83d\udc49 Fonction : Fournit le mat\u00e9riau de base pour les plaquettes de SiC.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">2. Couche \u00e9pitaxiale (Epitaxie)<\/h2>\n\n\n\n<p>Une couche de SiC de haute qualit\u00e9 est cultiv\u00e9e sur le substrat.<\/p>\n\n\n\n<p>Caract\u00e9ristiques principales :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>L'\u00e9paisseur d\u00e9termine la tension nominale<\/li>\n\n\n\n<li>~1 \u03bcm \u2248 100 V capacit\u00e9 de claquage<\/li>\n<\/ul>\n\n\n\n<p>\ud83d\udc49 Fonction : D\u00e9finit le plafond des performances \u00e9lectriques de l'appareil.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">3. Fabrication des dispositifs<\/h2>\n\n\n\n<p>Il suit g\u00e9n\u00e9ralement un mod\u00e8le IDM (Integrated Device Manufacturer).<\/p>\n\n\n\n<p>Principaux processus :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Photolithographie<\/li>\n\n\n\n<li>Implantation d'ions<\/li>\n\n\n\n<li>Gravure<\/li>\n\n\n\n<li>Oxydation<\/li>\n\n\n\n<li>M\u00e9tallisation<\/li>\n\n\n\n<li>Recuit<\/li>\n<\/ul>\n\n\n\n<p>\ud83d\udc49 Fonction : Forme des dispositifs de puissance tels que les MOSFET SiC.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">4. Emballage (encapsulation)<\/h2>\n\n\n\n<p>Domaines d'intervention :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Dissipation de la chaleur<\/li>\n\n\n\n<li>Interconnexion \u00e9lectrique<\/li>\n\n\n\n<li>Am\u00e9lioration de la fiabilit\u00e9<\/li>\n<\/ul>\n\n\n\n<p>\ud83d\udc49 La technologie d'emballage nationale est relativement mature<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">5. Module et application<\/h2>\n\n\n\n<p>Principales applications :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>V\u00e9hicules \u00e9lectriques<\/li>\n\n\n\n<li>Onduleurs photovolta\u00efques<\/li>\n\n\n\n<li>Alimentations industrielles<\/li>\n\n\n\n<li>Syst\u00e8mes de r\u00e9seau \u00e0 haute tension<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">2. Pourquoi la technologie des proc\u00e9d\u00e9s SiC est-elle si difficile \u00e0 mettre en \u0153uvre ?<\/h1>\n\n\n\n<p>Le mat\u00e9riau SiC pr\u00e9sente trois propri\u00e9t\u00e9s physiques extr\u00eames :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Duret\u00e9 extr\u00eamement \u00e9lev\u00e9e<\/li>\n\n\n\n<li>Temp\u00e9rature de fusion\/sublimation ultra-\u00e9lev\u00e9e (&gt;2000\u00b0C)<\/li>\n\n\n\n<li>Forte stabilit\u00e9 chimique<\/li>\n<\/ul>\n\n\n\n<p>Ces propri\u00e9t\u00e9s rendent le traitement beaucoup plus difficile que celui du silicium.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">1. Croissance monocristalline (m\u00e9thode PVT dominante)<\/h2>\n\n\n\n<figure class=\"wp-block-image aligncenter size-full\"><img fetchpriority=\"high\" decoding=\"async\" width=\"768\" height=\"768\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/05\/SiC-Single-Crystal-Growth-Furnace-for-6-Inch-and-8-Inch-Crystals-Using-PVT-Lely-and-TSSG-Methods-3-768x768-1.webp\" alt=\"\" class=\"wp-image-2452\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/05\/SiC-Single-Crystal-Growth-Furnace-for-6-Inch-and-8-Inch-Crystals-Using-PVT-Lely-and-TSSG-Methods-3-768x768-1.webp 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/05\/SiC-Single-Crystal-Growth-Furnace-for-6-Inch-and-8-Inch-Crystals-Using-PVT-Lely-and-TSSG-Methods-3-768x768-1-300x300.webp 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/05\/SiC-Single-Crystal-Growth-Furnace-for-6-Inch-and-8-Inch-Crystals-Using-PVT-Lely-and-TSSG-Methods-3-768x768-1-150x150.webp 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/05\/SiC-Single-Crystal-Growth-Furnace-for-6-Inch-and-8-Inch-Crystals-Using-PVT-Lely-and-TSSG-Methods-3-768x768-1-12x12.webp 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/05\/SiC-Single-Crystal-Growth-Furnace-for-6-Inch-and-8-Inch-Crystals-Using-PVT-Lely-and-TSSG-Methods-3-768x768-1-600x600.webp 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/05\/SiC-Single-Crystal-Growth-Furnace-for-6-Inch-and-8-Inch-Crystals-Using-PVT-Lely-and-TSSG-Methods-3-768x768-1-100x100.webp 100w\" sizes=\"(max-width: 768px) 100vw, 768px\" \/><\/figure>\n\n\n\n<p>Principales m\u00e9thodes :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Transport physique de vapeur (PVT)<\/li>\n\n\n\n<li>CVD \u00e0 haute temp\u00e9rature<\/li>\n\n\n\n<li>Croissance de la solution (adoption limit\u00e9e)<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">Caract\u00e9ristiques principales :<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Temp\u00e9rature jusqu'\u00e0 ~2500\u00b0C<\/li>\n\n\n\n<li>Environnement \u00e0 tr\u00e8s basse pression<\/li>\n\n\n\n<li>Taux de croissance extr\u00eamement lent<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">D\u00e9fis fondamentaux :<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Contr\u00f4le de la stabilit\u00e9 du champ thermique<\/li>\n\n\n\n<li>Durabilit\u00e9 du mat\u00e9riau du creuset<\/li>\n\n\n\n<li>Contr\u00f4le des d\u00e9fauts (dislocations, micropipes)<\/li>\n<\/ul>\n\n\n\n<p>R\u00e9sultat : Une production lente et des co\u00fbts de production \u00e9lev\u00e9s<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">2. Traitement des plaquettes : Manipulation de mat\u00e9riaux extr\u00eamement durs<\/h2>\n\n\n\n<h3 class=\"wp-block-heading\">Sciage de fil<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>La scie multi-fils diamant\u00e9e est standard<\/li>\n<\/ul>\n\n\n\n<p>D\u00e9fis :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Faible efficacit\u00e9 de coupe<\/li>\n\n\n\n<li>Formation de microfissures<\/li>\n\n\n\n<li>Usure \u00e9lev\u00e9e de l'outil<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">Meulage et polissage<\/h3>\n\n\n\n<p>D\u00e9fis :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Contr\u00f4le difficile de l'enl\u00e8vement de mati\u00e8re<\/li>\n\n\n\n<li>D\u00e9formation importante de la plaquette<\/li>\n\n\n\n<li>Risque \u00e9lev\u00e9 de fracture de la plaquette<\/li>\n<\/ul>\n\n\n\n<p>\ud83d\udc49 Question cl\u00e9 : Efficacit\u00e9 de traitement m\u00e9canique extr\u00eamement faible.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">3. Epitaxie : Fen\u00eatre de traitement \u00e9troite \u00e0 haute temp\u00e9rature<\/h2>\n\n\n\n<p>Temp\u00e9rature typique :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Jusqu'\u00e0 1700\u00b0C<\/li>\n<\/ul>\n\n\n\n<p>D\u00e9fis :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Fen\u00eatre de traitement extr\u00eamement \u00e9troite<\/li>\n\n\n\n<li>Sensibilit\u00e9 au d\u00e9bit de gaz<\/li>\n\n\n\n<li>Difficult\u00e9 de contr\u00f4le de l'uniformit\u00e9 de l'\u00e9paisseur<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">4. Fabrication de dispositifs : Syst\u00e8mes \u00e0 haute \u00e9nergie et \u00e0 haute temp\u00e9rature<\/h2>\n\n\n\n<h3 class=\"wp-block-heading\">Les principaux \u00e9quipements comprennent<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Syst\u00e8mes d'implantation ionique \u00e0 haute temp\u00e9rature<\/li>\n\n\n\n<li>Fours de recuit \u00e0 haute temp\u00e9rature<\/li>\n\n\n\n<li>Fours d'oxydation \u00e0 haute temp\u00e9rature<\/li>\n\n\n\n<li>Syst\u00e8mes de gravure \u00e0 sec<\/li>\n\n\n\n<li>Outils de nettoyage et de m\u00e9tallisation<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">3. \u00c9quipements cl\u00e9s dans la fabrication du SiC (20+ syst\u00e8mes)<\/h1>\n\n\n\n<p>5<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">1.<mark style=\"background-color:rgba(0, 0, 0, 0);color:#fcb900\" class=\"has-inline-color\"> <\/mark><a href=\"https:\/\/www.zmsh-semitech.com\/fr\/produit\/sic-single-crystal-growth-furnace-for-6-inch-and-8-inch-crystals-using-pvt-lely-and-tssg-methods\/\"><mark style=\"background-color:rgba(0, 0, 0, 0);color:#9b51e0\" class=\"has-inline-color\">Four de croissance de cristaux de SiC<\/mark><\/a><\/h2>\n\n\n\n<p>Exigences :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Capacit\u00e9 de fonctionnement \u22652500\u00b0C<\/li>\n\n\n\n<li>Scellage sous ultra-vide<\/li>\n\n\n\n<li>Contr\u00f4le pr\u00e9cis du champ thermique<\/li>\n<\/ul>\n\n\n\n<p>\ud83d\udc49 Essentiellement un syst\u00e8me d'ing\u00e9nierie des mat\u00e9riaux \u00e0 haute temp\u00e9rature<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">2. Scie multi-fils diamant\u00e9e<\/h2>\n\n\n\n<p>Fonctions :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Tranchage de plaquettes \u00e0 partir de lingots de SiC<\/li>\n<\/ul>\n\n\n\n<p>D\u00e9fis :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Contr\u00f4le de la tension du fil<\/li>\n\n\n\n<li>Suppression des vibrations<\/li>\n\n\n\n<li>Gestion de l'usure abrasive<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">3. Meulage du bord de la plaquette (chanfreinage)<\/h2>\n\n\n\n<p>Fonction :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Soulagement des contraintes sur les bords des plaquettes<\/li>\n<\/ul>\n\n\n\n<p>D\u00e9fis :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Contr\u00f4le d'une pr\u00e9cision de l'ordre du micron<\/li>\n\n\n\n<li>Pr\u00e9vention des fissures<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">4. Syst\u00e8mes de pon\u00e7age et de polissage<\/h2>\n\n\n\n<p>Types :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Broyage grossier (relativement mature au niveau national)<\/li>\n\n\n\n<li>Polissage fin (d\u00e9pend encore des importations)<\/li>\n<\/ul>\n\n\n\n<p>D\u00e9fis :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Contr\u00f4le des dommages sous la surface<\/li>\n\n\n\n<li>Stabilit\u00e9 de la plan\u00e9it\u00e9 de la plaquette<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">5. R\u00e9acteurs \u00e9pitaxi\u00e9s<\/h2>\n\n\n\n<p>Principaux fournisseurs mondiaux :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Aixtron (Allemagne)<\/li>\n\n\n\n<li>LPE (Italie)<\/li>\n\n\n\n<li>Nuflare (Japon)<\/li>\n<\/ul>\n\n\n\n<p>D\u00e9fis :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Uniformit\u00e9 des gaz \u00e0 haute temp\u00e9rature<\/li>\n\n\n\n<li>Contr\u00f4le de la pr\u00e9cision de l'\u00e9paisseur<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">6. Implanteurs d'ions \u00e0 haute temp\u00e9rature<\/h2>\n\n\n\n<p>Importance :<br>\ud83d\udc49 \u00c9quipement de base pour les fabriques de SiC<\/p>\n\n\n\n<p>D\u00e9fis :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Etage de gaufrettes \u00e0 haute temp\u00e9rature<\/li>\n\n\n\n<li>Stabilit\u00e9 de la poutre dans des conditions extr\u00eames<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">7. Four de recuit \u00e0 haute temp\u00e9rature (jusqu'\u00e0 2000\u00b0C)<\/h2>\n\n\n\n<p>Fonction :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Activation des dopants<\/li>\n\n\n\n<li>R\u00e9cup\u00e9ration des dommages par treillis<\/li>\n<\/ul>\n\n\n\n<p>D\u00e9fis :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Homog\u00e9n\u00e9it\u00e9 de la temp\u00e9rature (\u00b15\u00b0C)<\/li>\n\n\n\n<li>Contr\u00f4le des contraintes thermiques<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">8. Four d'oxydation \u00e0 haute temp\u00e9rature<\/h2>\n\n\n\n<p>Conditions :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>1300-1400\u00b0C<\/li>\n\n\n\n<li>Chimie complexe des gaz (O\u2082 \/ DCE \/ NO)<\/li>\n<\/ul>\n\n\n\n<p>D\u00e9fis :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>R\u00e9sistance \u00e0 la corrosion<\/li>\n\n\n\n<li>Conception de la chambre ultra-propre<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">9. Mat\u00e9riel de nettoyage<\/h2>\n\n\n\n<p>Exigence cl\u00e9 :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Contr\u00f4le des particules au niveau du nanom\u00e8tre (jusqu'\u00e0 une classe de ~45 nm)<\/li>\n<\/ul>\n\n\n\n<p>D\u00e9fis :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Contr\u00f4le de la contamination de surface<\/li>\n\n\n\n<li>Compatibilit\u00e9 multiprocessus<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">4. D\u00e9fis fondamentaux de la cha\u00eene industrielle du SiC<\/h1>\n\n\n\n<h2 class=\"wp-block-heading\">1. Conditions physiques extr\u00eames<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Traitement \u00e0 tr\u00e8s haute temp\u00e9rature (2000-2500\u00b0C)<\/li>\n\n\n\n<li>Vide et environnements corrosifs<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">2. Duret\u00e9 \u00e9lev\u00e9e des mat\u00e9riaux<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Vitesse d'usinage extr\u00eamement lente<\/li>\n\n\n\n<li>Usure et co\u00fbt \u00e9lev\u00e9s de l'outil<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">3. Difficult\u00e9s de contr\u00f4le du rendement<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Amplification des d\u00e9fauts \u00e0 travers les processus<\/li>\n\n\n\n<li>Effets cumulatifs des dommages<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">4. Lacunes en mati\u00e8re de localisation des \u00e9quipements<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Certains \u00e9quipements sont d\u00e9j\u00e0 localis\u00e9s<\/li>\n\n\n\n<li>L'\u00e9pitaxie haut de gamme et les outils de pr\u00e9cision d\u00e9pendent encore des importations<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">Conclusion<\/h1>\n\n\n\n<p>La difficult\u00e9 de la fabrication du SiC ne provient pas d'un goulot d'\u00e9tranglement unique, mais du fait que.. :<\/p>\n\n\n\n<p>\ud83d\udc49 Chaque \u00e9tape - de la croissance des cristaux \u00e0 la fabrication des dispositifs - repousse les limites de la physique des mat\u00e9riaux et de l'ing\u00e9nierie des \u00e9quipements.<\/p>\n\n\n\n<p>La comp\u00e9titivit\u00e9 future de l'industrie du SiC d\u00e9pendra de trois avanc\u00e9es majeures :<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Technologie de croissance cristalline plus stable<\/li>\n\n\n\n<li>Proc\u00e9d\u00e9s d'\u00e9pitaxie \u00e0 haute uniformit\u00e9<\/li>\n\n\n\n<li>Des \u00e9cosyst\u00e8mes d'\u00e9quipements moins co\u00fbteux et enti\u00e8rement localis\u00e9s<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Silicon Carbide (SiC) has become a cornerstone material in next-generation power electronics, widely used in electric vehicles, photovoltaic inverters, and high-voltage power systems. However, unlike mature silicon technology, the SiC industry chain is still highly complex, capital-intensive, and process-sensitive. This article provides a structured overview of the SiC industry chain, key manufacturing stages, process challenges, [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":2452,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"footnotes":""},"categories":[24],"tags":[1319,221,1321,1323,185,1329,1327,368,1325,1326,1324,1330,255,1328,188],"class_list":["post-2451","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-industry-news","tag-diamond-wire-saw-cutting","tag-high-temperature-annealing","tag-ion-implantation-sic","tag-power-electronics-semiconductors","tag-semiconductor-manufacturing-equipment","tag-semiconductor-oxidation-process","tag-semiconductor-wafer-processing","tag-sic-crystal-growth","tag-sic-device-fabrication","tag-sic-epitaxy-process","tag-sic-industry-chain","tag-sic-wafer-substrate","tag-silicon-carbide-manufacturing","tag-wafer-grinding-and-polishing","tag-wide-bandgap-semiconductors"],"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/posts\/2451","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/comments?post=2451"}],"version-history":[{"count":1,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/posts\/2451\/revisions"}],"predecessor-version":[{"id":2453,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/posts\/2451\/revisions\/2453"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/media\/2452"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/media?parent=2451"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/categories?post=2451"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/fr\/wp-json\/wp\/v2\/tags?post=2451"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}