{"id":2316,"date":"2026-04-21T06:05:44","date_gmt":"2026-04-21T06:05:44","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2316"},"modified":"2026-04-21T06:05:45","modified_gmt":"2026-04-21T06:05:45","slug":"ion-beam-etching-machine-for-si-sio2-and-metal-materials-in-semiconductor-fabrication","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/fi\/product\/ion-beam-etching-machine-for-si-sio2-and-metal-materials-in-semiconductor-fabrication\/","title":{"rendered":"Ion Beam Etching Machine Si SiO2 ja metallimateriaalien puolijohteiden valmistuksessa"},"content":{"rendered":"<p data-start=\"297\" data-end=\"643\"><img fetchpriority=\"high\" decoding=\"async\" class=\"size-medium wp-image-2320 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-300x300.webp\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-300x300.webp 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-150x150.webp 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-12x12.webp 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-600x600.webp 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-100x100.webp 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication.webp 750w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Si-, SiO2- ja metallimateriaalien ionisuihkuetsauslaite on korkean tarkkuuden kuivaetsausj\u00e4rjestelm\u00e4, joka on suunniteltu kehittyneisiin mikrovalmistus- ja nanoteknologiasovelluksiin. Ionisuihkusy\u00f6vytyst\u00e4 (IBE), joka tunnetaan my\u00f6s ionijyrsint\u00e4n\u00e4, hy\u00f6dynt\u00e4en t\u00e4m\u00e4 laite mahdollistaa eritt\u00e4in suuren materiaalin poiston puhtaasti fysikaalisen sputterointiprosessin avulla.<\/p>\n<p data-start=\"645\" data-end=\"961\">Toisin kuin tavanomaisissa plasmapohjaisissa etsausmenetelmiss\u00e4, ionisuihkusy\u00f6vytyksess\u00e4 substraattia ei altisteta suoraan plasmalle. T\u00e4m\u00e4 v\u00e4hent\u00e4\u00e4 merkitt\u00e4v\u00e4sti plasman aiheuttamien vaurioiden, kontaminaation ja varausten kertymisen riski\u00e4, joten se soveltuu erityisen hyvin herkkien puolijohteiden ja optisten laitteiden valmistukseen.<\/p>\n<p data-start=\"963\" data-end=\"1148\">Nanometritason tarkkuuden ja erinomaisen prosessin hallittavuuden ansiosta t\u00e4t\u00e4 j\u00e4rjestelm\u00e4\u00e4 k\u00e4ytet\u00e4\u00e4n laajalti puolijohteiden valmistuksessa, ohutkalvojen k\u00e4sittelyss\u00e4 ja kehittyneiden materiaalien tutkimuksessa.<\/p>\n<hr data-start=\"1150\" data-end=\"1153\" \/>\n<h2 data-section-id=\"17sw59i\" data-start=\"1155\" data-end=\"1184\"><span role=\"text\"><img decoding=\"async\" class=\"wp-image-2324 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-300x125.png\" alt=\"\" width=\"458\" height=\"191\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-300x125.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-18x7.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-600x250.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7.png 680w\" sizes=\"(max-width: 458px) 100vw, 458px\" \/>T\u00e4rkeimm\u00e4t tekniset ominaisuudet<\/span><\/h2>\n<ul data-start=\"1186\" data-end=\"1929\">\n<li data-section-id=\"7yo1gz\" data-start=\"1186\" data-end=\"1324\">Eritt\u00e4in korkea tarkkuus<br data-start=\"1212\" data-end=\"1215\" \/>Saavutetaan \u226410 nm:n etsausresoluutio, joka t\u00e4ytt\u00e4\u00e4 edistyneet puolijohde- ja nanovalmistusvaatimukset.<\/li>\n<li data-section-id=\"csgjgf\" data-start=\"1326\" data-end=\"1497\">Ei-selektiivinen sy\u00f6vytyskapasiteetti<br data-start=\"1364\" data-end=\"1367\" \/>Mahdollistaa tasaisen sy\u00f6vytyksen useisiin materiaaleihin, kuten metalleihin, puolijohteisiin ja dielektrisiin aineisiin, ilman kemiallista riippuvuutta.<\/li>\n<li data-section-id=\"1xlwjqh\" data-start=\"1499\" data-end=\"1667\">Anisotrooppinen ja suunnattu ohjaus<br data-start=\"1540\" data-end=\"1543\" \/>S\u00e4\u00e4dett\u00e4v\u00e4t ionisuihkukulmat mahdollistavat sek\u00e4 anisotrooppisen ett\u00e4 isotrooppisen sy\u00f6vytysprofiilin, mik\u00e4 tukee monimutkaista kuvionsiirtoa.<\/li>\n<li data-section-id=\"1ialgp0\" data-start=\"1669\" data-end=\"1793\">Plasmavapaa k\u00e4sittely-ymp\u00e4rist\u00f6<br data-start=\"1709\" data-end=\"1712\" \/>Poistaa plasman aiheuttamat vauriot, mik\u00e4 takaa suuremman laitteen luotettavuuden ja tuoton.<\/li>\n<li data-section-id=\"1squn5z\" data-start=\"1795\" data-end=\"1929\">Erinomainen pinnan laatu<br data-start=\"1826\" data-end=\"1829\" \/>Tuottaa sileit\u00e4 pintoja, joiden karheutta on v\u00e4hennetty, mik\u00e4 on kriittist\u00e4 optisissa ja elektronisissa sovelluksissa.<\/li>\n<\/ul>\n<hr data-start=\"1931\" data-end=\"1934\" \/>\n<h2 data-section-id=\"crb813\" data-start=\"1936\" data-end=\"1965\"><span role=\"text\">J\u00e4rjestelm\u00e4n ydinkomponentit<\/span><\/h2>\n<p data-start=\"1967\" data-end=\"2042\">T\u00e4ydellinen ionisuihkuetsausj\u00e4rjestelm\u00e4 koostuu useista kriittisist\u00e4 osaj\u00e4rjestelmist\u00e4:<\/p>\n<h3 data-section-id=\"j86wbp\" data-start=\"2044\" data-end=\"2068\"><span role=\"text\">1. Tyhji\u00f6j\u00e4rjestelm\u00e4<\/span><\/h3>\n<p data-start=\"2069\" data-end=\"2118\">Tarjoaa korkean tyhji\u00f6n ymp\u00e4rist\u00f6n, joka on v\u00e4ltt\u00e4m\u00e4t\u00f6n:<\/p>\n<ul data-start=\"2119\" data-end=\"2193\">\n<li data-section-id=\"1vzt3vq\" data-start=\"2119\" data-end=\"2137\">Palkin vakaus<\/li>\n<li data-section-id=\"svkbf3\" data-start=\"2138\" data-end=\"2163\">Saastumisen valvonta<\/li>\n<li data-section-id=\"19d0yza\" data-start=\"2164\" data-end=\"2193\">Korkean tarkkuuden k\u00e4sittely<\/li>\n<\/ul>\n<h3 data-section-id=\"8jigvj\" data-start=\"2195\" data-end=\"2216\"><span role=\"text\">2. Ionil\u00e4hde<\/span><\/h3>\n<p data-start=\"2217\" data-end=\"2272\">Tuottaa suurienergisen ionisuihkun (yleens\u00e4 argonionit):<\/p>\n<ul data-start=\"2273\" data-end=\"2386\">\n<li data-section-id=\"116c4dh\" data-start=\"2273\" data-end=\"2315\">M\u00e4\u00e4ritt\u00e4\u00e4 sy\u00f6vytysnopeuden ja tasaisuuden<\/li>\n<li data-section-id=\"bdpzju\" data-start=\"2316\" data-end=\"2386\">Tukee eri l\u00e4hdetyyppej\u00e4, kuten RF- ja Kaufman-ionil\u00e4hteit\u00e4.<\/li>\n<\/ul>\n<h3 data-section-id=\"1tpsqxl\" data-start=\"2388\" data-end=\"2411\"><span role=\"text\">3. N\u00e4ytteenottovaihe<\/span><\/h3>\n<ul data-start=\"2412\" data-end=\"2530\">\n<li data-section-id=\"d3z3he\" data-start=\"2412\" data-end=\"2468\">Tukee moniakselista kiertoa tasaista sy\u00f6vytyst\u00e4 varten<\/li>\n<li data-section-id=\"15yipgz\" data-start=\"2469\" data-end=\"2530\">Integroitu l\u00e4mp\u00f6tilan s\u00e4\u00e4t\u00f6 parantaa prosessin vakautta<\/li>\n<\/ul>\n<h3 data-section-id=\"qoosxq\" data-start=\"2532\" data-end=\"2557\"><span role=\"text\">4. Ohjausj\u00e4rjestelm\u00e4<\/span><\/h3>\n<ul data-start=\"2558\" data-end=\"2705\">\n<li data-section-id=\"1mqnqw1\" data-start=\"2558\" data-end=\"2587\">T\u00e4ysin automatisoitu toiminta<\/li>\n<li data-section-id=\"ymbyxd\" data-start=\"2588\" data-end=\"2643\">Mahdollistaa tarkan parametrien hallinnan ja toistettavuuden<\/li>\n<li data-section-id=\"1kjf28e\" data-start=\"2644\" data-end=\"2705\">Valinnainen p\u00e4\u00e4tepisteen tunnistus kehittyneeseen prosessinohjaukseen<\/li>\n<\/ul>\n<h3 data-section-id=\"97rafg\" data-start=\"2707\" data-end=\"2729\"><span role=\"text\">5. Neutralointiaine<\/span><\/h3>\n<ul data-start=\"2730\" data-end=\"2836\">\n<li data-section-id=\"12j0ebp\" data-start=\"2730\" data-end=\"2772\">Est\u00e4\u00e4 varauksen kertymisen sy\u00f6vytyksen aikana<\/li>\n<li data-section-id=\"1o4nvb1\" data-start=\"2773\" data-end=\"2836\">V\u00e4ltt\u00e4m\u00e4t\u00f6n eristysmateriaaleille, kuten SiO\u2082 ja Si\u2083N\u2084.<\/li>\n<\/ul>\n<hr data-start=\"2838\" data-end=\"2841\" \/>\n<h2 data-section-id=\"sgqumq\" data-start=\"2843\" data-end=\"2867\"><span role=\"text\">Toimintaperiaate<\/span><\/h2>\n<p data-start=\"2869\" data-end=\"3006\"><img decoding=\"async\" class=\"size-medium wp-image-2321 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-300x235.png\" alt=\"\" width=\"300\" height=\"235\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-300x235.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-15x12.png 15w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-600x469.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1.png 680w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Ionisuihkukaiverruksessa kohdemateriaalin pintaa kohti suunnataan korkeaenerginen, kollimoitu ionisuihku tyhji\u00f6olosuhteissa.<\/p>\n<p data-start=\"3008\" data-end=\"3253\">Ionit (tyypillisesti Ar\u207a) t\u00f6rm\u00e4\u00e4v\u00e4t pinta-atomien kanssa, siirt\u00e4v\u00e4t impulssia ja saavat atomit sinkoutumaan fyysisen sputteroinnin avulla. T\u00e4m\u00e4 prosessi poistaa materiaalia kerros kerrokselta, mik\u00e4 mahdollistaa tarkan kuvion m\u00e4\u00e4rittelyn ilman kemiallisia reaktioita.<\/p>\n<p data-start=\"3255\" data-end=\"3296\">T\u00e4m\u00e4n vuoksi IBE soveltuu erityisesti seuraaviin kohteisiin:<\/p>\n<ul data-start=\"3297\" data-end=\"3403\">\n<li data-section-id=\"jy9ydi\" data-start=\"3297\" data-end=\"3333\">Korkean resoluution kuvionsiirto<\/li>\n<li data-section-id=\"1ihgsm0\" data-start=\"3334\" data-end=\"3376\">Materiaalit, joiden kemiallinen reaktiivisuus on alhainen<\/li>\n<li data-section-id=\"hl3mzt\" data-start=\"3377\" data-end=\"3403\">Monikerrosrakenteet<\/li>\n<\/ul>\n<hr data-start=\"3405\" data-end=\"3408\" \/>\n<h2 data-section-id=\"gimyd4\" data-start=\"3410\" data-end=\"3440\"><span role=\"text\">Jalostusvalmiudet<\/span><\/h2>\n<h3 data-section-id=\"ww5vbk\" data-start=\"3442\" data-end=\"3469\"><span role=\"text\">Tuetut materiaalit<\/span><\/h3>\n<ul data-start=\"3470\" data-end=\"3622\">\n<li data-section-id=\"4dwycu\" data-start=\"3470\" data-end=\"3504\">Metallit: Metallien nimet: Au, Pt, Cu, Ta, Al.<\/li>\n<li data-section-id=\"12wc4i0\" data-start=\"3505\" data-end=\"3537\">Puolijohteet: Puolijohteet: Si, GaAs<\/li>\n<li data-section-id=\"75kyg7\" data-start=\"3538\" data-end=\"3570\">Dielektriset aineet: SiO\u2082, Si\u2083N\u2084.<\/li>\n<li data-section-id=\"1xmdv1x\" data-start=\"3571\" data-end=\"3622\">Kehittyneet materiaalit: AlN, keramiikka, polymeerit.<\/li>\n<\/ul>\n<hr data-start=\"3624\" data-end=\"3627\" \/>\n<h2 data-section-id=\"12vl3dy\" data-start=\"3629\" data-end=\"3656\"><span role=\"text\">Tyypillinen prosessin kulku<\/span><\/h2>\n<ol data-start=\"3658\" data-end=\"4078\">\n<li data-section-id=\"1lq2akh\" data-start=\"3658\" data-end=\"3742\">N\u00e4ytteen valmistelu<br data-start=\"3683\" data-end=\"3686\" \/>Puhdista ja asenna substraatti tyhji\u00f6kammioon.<\/li>\n<li data-section-id=\"1uf7qj1\" data-start=\"3744\" data-end=\"3821\">Peitt\u00e4minen<br data-start=\"3758\" data-end=\"3761\" \/>Levit\u00e4 fotoresisti tai metallimaski etsausalueiden m\u00e4\u00e4rittelemiseksi.<\/li>\n<li data-section-id=\"1sq3ygn\" data-start=\"3823\" data-end=\"3910\">Ionis\u00e4teen tuottaminen<br data-start=\"3849\" data-end=\"3852\" \/>Aktivoidaan ionil\u00e4hde inertill\u00e4 kaasulla (tyypillisesti argonilla).<\/li>\n<li data-section-id=\"46esbg\" data-start=\"3912\" data-end=\"4006\">Sy\u00f6vytysprosessi<br data-start=\"3934\" data-end=\"3937\" \/>S\u00e4\u00e4d\u00e4 s\u00e4teen energiaa, kulmaa ja aikaa halutun rakenteen saavuttamiseksi.<\/li>\n<li data-section-id=\"oeifr6\" data-start=\"4008\" data-end=\"4078\">Maskin poisto<br data-start=\"4027\" data-end=\"4030\" \/>Poista maski paljastaaksesi lopulliset sy\u00f6vytetyt kuviot<\/li>\n<\/ol>\n<hr data-start=\"4080\" data-end=\"4083\" \/>\n<h2 data-section-id=\"1myoacb\" data-start=\"4085\" data-end=\"4109\"><span role=\"text\">Sovellusalueet<\/span><\/h2>\n<h3 data-section-id=\"bm5nu5\" data-start=\"4111\" data-end=\"4146\"><span role=\"text\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-2322 aligncenter\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-300x65.png\" alt=\"\" width=\"724\" height=\"157\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-300x65.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-18x4.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-600x130.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6.png 680w\" sizes=\"(max-width: 724px) 100vw, 724px\" \/>Puolijohteiden valmistus<\/span><\/h3>\n<ul data-start=\"4147\" data-end=\"4236\">\n<li data-section-id=\"13vctk4\" data-start=\"4147\" data-end=\"4180\">Integroidun piirin kuviointi<\/li>\n<li data-section-id=\"ofwy8d\" data-start=\"4181\" data-end=\"4206\">Ohutkalvon strukturointi<\/li>\n<li data-section-id=\"1x3kzva\" data-start=\"4207\" data-end=\"4236\">Kehittynyt solmujen valmistus<\/li>\n<\/ul>\n<h3 data-section-id=\"1tse075\" data-start=\"4238\" data-end=\"4261\"><span role=\"text\">Optiset laitteet<\/span><\/h3>\n<ul data-start=\"4262\" data-end=\"4356\">\n<li data-section-id=\"v6a7ly\" data-start=\"4262\" data-end=\"4309\">Ritil\u00f6iden ja linssien tarkkuusk\u00e4sittely<\/li>\n<li data-section-id=\"lq2w9m\" data-start=\"4310\" data-end=\"4356\">Optisten komponenttien pinnan muokkaus<\/li>\n<\/ul>\n<h3 data-section-id=\"1wc0my6\" data-start=\"4358\" data-end=\"4380\"><span role=\"text\">Nanoteknologia<\/span><\/h3>\n<ul data-start=\"4381\" data-end=\"4441\">\n<li data-section-id=\"178ey7v\" data-start=\"4381\" data-end=\"4441\">Nanolankojen, nanohuokosten ja MEMS-rakenteiden valmistus<\/li>\n<\/ul>\n<h3 data-section-id=\"krs816\" data-start=\"4443\" data-end=\"4468\"><span role=\"text\">Materiaalitiede<\/span><\/h3>\n<ul data-start=\"4469\" data-end=\"4541\">\n<li data-section-id=\"18ntl16\" data-start=\"4469\" data-end=\"4506\">Pinnan analysointi ja muokkaus<\/li>\n<li data-section-id=\"1b8wqpz\" data-start=\"4507\" data-end=\"4541\">Toiminnallisen pinnoitteen valmistelu<\/li>\n<\/ul>\n<hr data-start=\"4543\" data-end=\"4546\" \/>\n<h2 data-section-id=\"13lz0w7\" data-start=\"4548\" data-end=\"4591\"><span role=\"text\">Edut perinteiseen sy\u00f6vytykseen verrattuna<\/span><\/h2>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"4593\" data-end=\"4927\">\n<thead data-start=\"4593\" data-end=\"4646\">\n<tr data-start=\"4593\" data-end=\"4646\">\n<th class=\"\" data-start=\"4593\" data-end=\"4603\" data-col-size=\"sm\">Ominaisuus<\/th>\n<th class=\"\" data-start=\"4603\" data-end=\"4622\" data-col-size=\"sm\">Ionis\u00e4teen sy\u00f6vytys<\/th>\n<th class=\"\" data-start=\"4622\" data-end=\"4646\" data-col-size=\"sm\">Reaktiivinen ionipeittaus<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"4697\" data-end=\"4927\">\n<tr data-start=\"4697\" data-end=\"4746\">\n<td data-start=\"4697\" data-end=\"4712\" data-col-size=\"sm\">Prosessin tyyppi<\/td>\n<td data-start=\"4712\" data-end=\"4723\" data-col-size=\"sm\">Fyysinen<\/td>\n<td data-start=\"4723\" data-end=\"4746\" data-col-size=\"sm\">Fysikaalinen + kemiallinen<\/td>\n<\/tr>\n<tr data-start=\"4747\" data-end=\"4805\">\n<td data-start=\"4747\" data-end=\"4765\" data-col-size=\"sm\">Plasmaaltistus<\/td>\n<td data-start=\"4765\" data-end=\"4786\" data-col-size=\"sm\">Ei suoraa altistumista<\/td>\n<td data-start=\"4786\" data-end=\"4805\" data-col-size=\"sm\">Suora altistuminen<\/td>\n<\/tr>\n<tr data-start=\"4806\" data-end=\"4853\">\n<td data-start=\"4806\" data-end=\"4829\" data-col-size=\"sm\">Materiaalin valikoivuus<\/td>\n<td data-start=\"4829\" data-end=\"4845\" data-col-size=\"sm\">Alhainen (yhten\u00e4inen)<\/td>\n<td data-start=\"4845\" data-end=\"4853\" data-col-size=\"sm\">Korkea<\/td>\n<\/tr>\n<tr data-start=\"4854\" data-end=\"4893\">\n<td data-start=\"4854\" data-end=\"4871\" data-col-size=\"sm\">Pintavauriot<\/td>\n<td data-start=\"4871\" data-end=\"4881\" data-col-size=\"sm\">Minimaalinen<\/td>\n<td data-start=\"4881\" data-end=\"4893\" data-col-size=\"sm\">Mahdollinen<\/td>\n<\/tr>\n<tr data-start=\"4894\" data-end=\"4927\">\n<td data-start=\"4894\" data-end=\"4906\" data-col-size=\"sm\">Tarkkuus<\/td>\n<td data-start=\"4906\" data-end=\"4919\" data-col-size=\"sm\">Eritt\u00e4in korkea<\/td>\n<td data-start=\"4919\" data-end=\"4927\" data-col-size=\"sm\">Korkea<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<hr data-start=\"4929\" data-end=\"4932\" \/>\n<h2 data-section-id=\"elc90z\" data-start=\"4934\" data-end=\"4944\"><span role=\"text\">FAQ<\/span><\/h2>\n<h3 data-section-id=\"1h3z74f\" data-start=\"4946\" data-end=\"4978\"><span role=\"text\">Mik\u00e4 on ionis\u00e4teen etsaus\uff1f<\/span><\/h3>\n<p data-start=\"4979\" data-end=\"5122\">Ionisuihkusy\u00f6vytys on kuiva sy\u00f6vytysprosessi, jossa materiaalia poistetaan fysikaalisen sputteroinnin avulla k\u00e4ytt\u00e4en korkeaenergisi\u00e4 ioneja tyhji\u00f6ymp\u00e4rist\u00f6ss\u00e4.<\/p>\n<h3 data-section-id=\"1oyreis\" data-start=\"5124\" data-end=\"5153\"><span role=\"text\">IBE vs RIE ero\uff1f<\/span><\/h3>\n<ul data-start=\"5154\" data-end=\"5316\">\n<li data-section-id=\"6o7nxe\" data-start=\"5154\" data-end=\"5219\">IBE: puhtaasti fyysinen, ei plasmakosketusta, suurempi tarkkuus.<\/li>\n<li data-section-id=\"d79ynl\" data-start=\"5220\" data-end=\"5316\">RIE: yhdist\u00e4\u00e4 kemialliset reaktiot plasman kanssa, parempi selektiivisyys mutta suurempi vaurioriski.<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Si-, SiO2- ja metallimateriaalien ionisuihkuetsauslaite on korkean tarkkuuden kuivaetsausj\u00e4rjestelm\u00e4, joka on suunniteltu kehittyneisiin mikrovalmistus- ja nanoteknologiasovelluksiin. Ionisuihkusy\u00f6vytyst\u00e4 (IBE), joka tunnetaan my\u00f6s ionijyrsint\u00e4n\u00e4, hy\u00f6dynt\u00e4en t\u00e4m\u00e4 laite mahdollistaa eritt\u00e4in suuren materiaalin poiston puhtaasti fysikaalisen sputterointiprosessin avulla.<\/p>","protected":false},"featured_media":2320,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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