{"id":2021,"date":"2026-03-27T01:46:43","date_gmt":"2026-03-27T01:46:43","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2021"},"modified":"2026-03-27T01:46:45","modified_gmt":"2026-03-27T01:46:45","slug":"high-precision-wafer-bonding-equipment-for-si-si-sic-sic-heterogeneous-integration","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/es\/product\/high-precision-wafer-bonding-equipment-for-si-si-sic-sic-heterogeneous-integration\/","title":{"rendered":"Equipos de uni\u00f3n de obleas de alta precisi\u00f3n para Si-Si, SiC-SiC e integraci\u00f3n heterog\u00e9nea"},"content":{"rendered":"

El equipo de uni\u00f3n de obleas es un sistema de alto rendimiento dise\u00f1ado para el envasado avanzado de semiconductores, la fabricaci\u00f3n de MEMS y la integraci\u00f3n de semiconductores de tercera generaci\u00f3n. Admite obleas de 2 a 12 pulgadas y permite la uni\u00f3n directa a temperatura ambiente y la uni\u00f3n hidrof\u00edlica, por lo que resulta especialmente adecuado para la uni\u00f3n de Si-Si, SiC-SiC y materiales heterog\u00e9neos (Si-SiC, GaN, zafiro, etc.).<\/p>\n

\"\"<\/p>\n

Dise\u00f1ado tanto para entornos de I+D como para producci\u00f3n en serie, el sistema integra alineaci\u00f3n de ultraprecisi\u00f3n, control de presi\u00f3n y temperatura en bucle cerrado y condiciones de uni\u00f3n en vac\u00edo ultraalto, lo que garantiza una alta resistencia de uni\u00f3n, una excelente uniformidad de la interfaz y una baja densidad de defectos.<\/p>\n

Caracter\u00edsticas principales<\/span><\/h1>\n

\"\"1. Tecnolog\u00eda avanzada de uni\u00f3n a temperatura ambiente<\/span><\/h3>\n
    \n
  • Elimina el estr\u00e9s t\u00e9rmico y el alabeo de la oblea<\/li>\n
  • Permite unir materiales sensibles a la temperatura y dis\u00edmiles<\/li>\n
  • Favorece la adhesi\u00f3n hidr\u00f3fila y la adhesi\u00f3n activada por plasma<\/li>\n<\/ul>\n

    2. Alineaci\u00f3n de alta precisi\u00f3n<\/span><\/h3>\n
      \n
    • Precisi\u00f3n de alineaci\u00f3n de la marca: \u2264 \u00b12 \u03bcm<\/li>\n
    • Precisi\u00f3n de alineaci\u00f3n de bordes: \u2264 \u00b150 \u03bcm<\/li>\n
    • Actualizaci\u00f3n opcional al sistema de alineaci\u00f3n submicr\u00f3nica<\/li>\n<\/ul>\n

      3. Alta resistencia de adhesi\u00f3n y calidad de la interfaz<\/span><\/h3>\n
        \n
      • \u2265 2,0 J\/m\u00b2 (uni\u00f3n directa Si-Si a temperatura ambiente)<\/li>\n
      • Hasta \u22655 J\/m\u00b2 con activaci\u00f3n de la superficie del plasma<\/li>\n
      • Excelente limpieza de la interfaz en condiciones UHV<\/li>\n<\/ul>\n

        4. Amplia compatibilidad de materiales<\/span><\/h3>\n

        Admite la uni\u00f3n de:<\/p>\n

          \n
        • Semiconductores: Si, SiC, GaN, GaAs, InP<\/li>\n
        • Materiales \u00f3pticos: Zafiro, Cristal<\/li>\n
        • Materiales funcionales: LiNbO\u2083, Diamante<\/li>\n<\/ul>\n

          5. Capacidad de proceso flexible<\/span><\/h3>\n
            \n
          • Tama\u00f1o de la oblea: 2\u2033 - 12\u2033.<\/li>\n
          • Compatible con muestras de forma irregular<\/li>\n
          • M\u00f3dulos opcionales: precalentamiento \/ recocido (RT-500\u00b0C)<\/li>\n<\/ul>\n

            Especificaciones t\u00e9cnicas<\/span><\/h1>\n
            \n
            \n\n\n\n\n\n\n\n\n\n\n\n\n
            Par\u00e1metro<\/th>\nEspecificaci\u00f3n<\/th>\n<\/tr>\n<\/thead>\n
            M\u00e9todos de adhesi\u00f3n<\/td>\nAdhesi\u00f3n directa \/ adhesi\u00f3n activada por plasma<\/td>\n<\/tr>\n
            Tama\u00f1o de la oblea<\/td>\n2\u2033 - 12\u2033<\/td>\n<\/tr>\n
            Rango de presi\u00f3n<\/td>\n0 - 10 MPa<\/td>\n<\/tr>\n
            Fuerza m\u00e1xima<\/td>\n100 kN<\/td>\n<\/tr>\n
            Temperatura<\/td>\nTemperatura ambiente - 500\u00b0C (opcional)<\/td>\n<\/tr>\n
            Nivel de vac\u00edo<\/td>\n\u2264 5 \u00d7 10-\u2076 Torr<\/td>\n<\/tr>\n
            Precisi\u00f3n de alineaci\u00f3n<\/td>\n\u2264 \u00b12 \u03bcm (Marca), \u2264 \u00b150 \u03bcm (Borde)<\/td>\n<\/tr>\n
            Fuerza de adhesi\u00f3n<\/td>\n\u2265 2,0 J\/m\u00b2 (RT Si-Si)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

            \"\"Sistema de control inteligente<\/span><\/h1>\n
              \n
            • Pantalla t\u00e1ctil industrial HMI<\/li>\n
            • Admite el almacenamiento de m\u00e1s de 50 recetas de procesos<\/li>\n
            • Control en bucle cerrado de presi\u00f3n-temperatura en tiempo real<\/li>\n
            • Rendimiento estable y repetible del proceso<\/li>\n<\/ul>\n

              Seguridad y fiabilidad<\/span><\/h1>\n
                \n
              • Triple protecci\u00f3n de enclavamiento (presi\u00f3n \/ temperatura \/ vac\u00edo)<\/li>\n
              • Sistema de parada de emergencia<\/li>\n
              • Dise\u00f1ado para ser compatible con salas blancas de clase 100<\/li>\n<\/ul>\n

                Configuraciones opcionales<\/span><\/h1>\n
                  \n
                • Sistema robotizado de manipulaci\u00f3n de obleas<\/li>\n
                • Interfaz de comunicaci\u00f3n SECS\/GEM (lista para la integraci\u00f3n en f\u00e1brica)<\/li>\n
                • M\u00f3dulo de inspecci\u00f3n en l\u00ednea<\/li>\n
                • Unidad de activaci\u00f3n de la superficie de plasma<\/li>\n<\/ul>\n

                  Aplicaciones t\u00edpicas<\/span><\/h1>\n

                  1. Embalaje de MEMS<\/span><\/h3>\n

                  Sellado herm\u00e9tico para sensores como aceler\u00f3metros y giroscopios<\/p>\n

                  2. Integraci\u00f3n de CI en 3D<\/span><\/h3>\n

                  Apilado de obleas para TSV y envasado avanzado<\/p>\n

                  3. Dispositivos semiconductores compuestos<\/span><\/h3>\n

                  Uni\u00f3n de dispositivos de potencia GaN \/ SiC y transferencia de capas<\/p>\n

                  4. Sensores de imagen CMOS (CIS)<\/span><\/h3>\n

                  Uni\u00f3n a baja temperatura de obleas CMOS y sustratos \u00f3pticos<\/p>\n

                  5. Biochips y microfluidos<\/span><\/h3>\n

                  Uni\u00f3n fiable para dispositivos lab-on-chip<\/p>\n

                  Ejemplo de proceso<\/span><\/h1>\n

                  Uni\u00f3n de obleas de LiNbO\u2083 - SiC (temperatura ambiente)<\/p>\n

                    \n
                  • Consigue una interfaz de uni\u00f3n fuerte y uniforme<\/li>\n
                  • Verificado mediante im\u00e1genes TEM transversales<\/li>\n
                  • Adecuado para aplicaciones de alta frecuencia y optoelectr\u00f3nicas<\/li>\n<\/ul>\n

                    PREGUNTAS Y RESPUESTAS<\/span><\/h1>\n

                    P1: \u00bfPor qu\u00e9 elegir el pegado de obleas a temperatura ambiente en lugar del pegado t\u00e9rmico?<\/span><\/h3>\n

                    La uni\u00f3n a temperatura ambiente evita desajustes t\u00e9rmicos y tensiones, por lo que es ideal para materiales heterog\u00e9neos y mejora el rendimiento en envases avanzados.<\/p>\n

                    P2: \u00bfQu\u00e9 materiales pueden adherirse?<\/span><\/h3>\n

                    El sistema admite una amplia gama de materiales:<\/p>\n

                      \n
                    • Semiconductores: Si, SiC, GaN<\/li>\n
                    • \u00d3xidos: SiO\u2082, LiNbO\u2083<\/li>\n
                    • Metales: Cu, Au<\/li>\n<\/ul>\n

                      Por qu\u00e9 elegir este sistema<\/span><\/h1>\n
                        \n
                      • Rendimiento demostrado en la fabricaci\u00f3n de dispositivos de potencia de SiC<\/li>\n
                      • Resistencia de adhesi\u00f3n verificada mediante pruebas de laboratorio y an\u00e1lisis TEM.<\/li>\n
                      • Dise\u00f1ado tanto para institutos de investigaci\u00f3n como para f\u00e1bricas industriales<\/li>\n
                      • La arquitectura modular garantiza la escalabilidad y capacidad de actualizaci\u00f3n a largo plazo<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

                        El equipo de uni\u00f3n de obleas es un sistema de alto rendimiento dise\u00f1ado para el empaquetado avanzado de semiconductores, la fabricaci\u00f3n de MEMS y la integraci\u00f3n de semiconductores de tercera generaci\u00f3n.<\/p>","protected":false},"featured_media":2024,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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