{"id":2389,"date":"2026-04-24T05:55:23","date_gmt":"2026-04-24T05:55:23","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2389"},"modified":"2026-04-24T05:55:25","modified_gmt":"2026-04-24T05:55:25","slug":"cvd-silicon-carbide-sic-ring-for-semiconductor-plasma-etching","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/de\/product\/cvd-silicon-carbide-sic-ring-for-semiconductor-plasma-etching\/","title":{"rendered":"CVD-Siliziumkarbid-SiC-Ring f\u00fcr das Halbleiterplasma-\u00c4tzen"},"content":{"rendered":"<p data-start=\"213\" data-end=\"577\"><img fetchpriority=\"high\" decoding=\"async\" class=\"alignright wp-image-2392 size-medium\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-300x300.png\" alt=\"CVD-Siliziumkarbid-SiC-Ring f\u00fcr das Halbleiterplasma-\u00c4tzen\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-1.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Der SiC-Ring (Siliziumkarbidring) ist eine Hochleistungskomponente, die h\u00e4ufig in Halbleiter-Plasmabearbeitungsanlagen, insbesondere in \u00c4tz- und Abscheidekammern, eingesetzt wird. Hergestellt aus CVD-Siliciumcarbid (Chemical Vapor Deposition), bietet dieses Produkt eine au\u00dfergew\u00f6hnliche Best\u00e4ndigkeit gegen Plasmaerosion, hohe Temperaturen und aggressive chemische Umgebungen.<\/p>\n<p data-start=\"579\" data-end=\"989\">Bei der Herstellung von Halbleitern sind die Kammerbauteile st\u00e4ndig reaktiven Gasen wie Fluor- und Chlor-basierten Chemikalien (CF\u2084, SF\u2086, Cl\u2082) sowie hochenergetischem Ionenbeschuss ausgesetzt. Unter solchen Bedingungen neigen herk\u00f6mmliche Siliziumkomponenten dazu, sich schneller zu zersetzen. Im Gegensatz dazu bieten SiC-Ringe eine deutlich l\u00e4ngere Haltbarkeit, eine geringere Partikelbildung und eine verbesserte Prozessstabilit\u00e4t.<\/p>\n<p data-start=\"991\" data-end=\"1355\">Dank seiner hervorragenden mechanischen Festigkeit, W\u00e4rmeleitf\u00e4higkeit und chemischen Inertheit gilt CVD-SiC als eines der zuverl\u00e4ssigsten Materialien f\u00fcr Halbleiteranlagen der n\u00e4chsten Generation. SiC-Ringe werden in der Regel als Fokusringe, Kantenringe oder Kammerschutzringe installiert und tragen dazu bei, die Plasmaverteilung zu kontrollieren und kritische Kammerteile zu sch\u00fctzen.<\/p>\n<p data-start=\"1357\" data-end=\"1595\">Diese Ringe werden als kritische Halbleiter-Verbrauchsmaterialien eingestuft und bieten im Vergleich zu herk\u00f6mmlichen Siliziumringen eine wesentlich l\u00e4ngere Lebensdauer, was sie ideal f\u00fcr fortgeschrittene Prozessknoten und Fertigungsumgebungen mit hohem Durchsatz macht.<\/p>\n<hr data-start=\"1597\" data-end=\"1600\" \/>\n<h2 data-section-id=\"1wht24f\" data-start=\"1602\" data-end=\"1622\">Wesentliche Merkmale<\/h2>\n<p><img decoding=\"async\" class=\"size-medium wp-image-2390 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/CVD-Silicon-Carbide-SiC-Ring-for-Semiconductor-Plasma-Etching-2.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/p>\n<ul data-start=\"1623\" data-end=\"2189\">\n<li data-section-id=\"185xteb\" data-start=\"1623\" data-end=\"1725\">Hochreines CVD-SiC-Material: Gew\u00e4hrleistet hervorragende strukturelle Integrit\u00e4t und minimale Verunreinigung<\/li>\n<li data-section-id=\"103qh1t\" data-start=\"1726\" data-end=\"1822\">Hervorragende Plasmabest\u00e4ndigkeit: Hervorragende Best\u00e4ndigkeit gegen fluor- und chlorbasierte Plasmen<\/li>\n<li data-section-id=\"19jl5gi\" data-start=\"1823\" data-end=\"1924\">Hohe Temperaturstabilit\u00e4t: Beh\u00e4lt die Leistung in Verarbeitungsumgebungen mit hohen Temperaturen bei<\/li>\n<li data-section-id=\"ixqmoc\" data-start=\"1925\" data-end=\"2002\">Geringe Partikelbildung: Verbessert die Waferausbeute und Prozessreinheit<\/li>\n<li data-section-id=\"nx34my\" data-start=\"2003\" data-end=\"2084\">Verl\u00e4ngerte Lebensdauer: In der Regel um ein Vielfaches l\u00e4nger als Siliziumkomponenten<\/li>\n<li data-section-id=\"14jsdwf\" data-start=\"2085\" data-end=\"2189\">Pr\u00e4zisions-Bearbeitung: Enge Toleranzen (&lt;10 \u03bcm) f\u00fcr nahtlose Integration in Halbleiterwerkzeuge<\/li>\n<\/ul>\n<hr data-start=\"2191\" data-end=\"2194\" \/>\n<h2 data-section-id=\"1vgwxle\" data-start=\"2196\" data-end=\"2228\">Technische Daten<\/h2>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"2230\" data-end=\"2883\">\n<thead data-start=\"2230\" data-end=\"2259\">\n<tr data-start=\"2230\" data-end=\"2259\">\n<th class=\"\" data-start=\"2230\" data-end=\"2242\" data-col-size=\"sm\">Parameter<\/th>\n<th class=\"\" data-start=\"2242\" data-end=\"2259\" data-col-size=\"md\">Spezifikation<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"2287\" data-end=\"2883\">\n<tr data-start=\"2287\" data-end=\"2327\">\n<td data-start=\"2287\" data-end=\"2298\" data-col-size=\"sm\">Material<\/td>\n<td data-col-size=\"md\" data-start=\"2298\" data-end=\"2327\">CVD-Siliziumkarbid (SiC)<\/td>\n<\/tr>\n<tr data-start=\"2328\" data-end=\"2348\">\n<td data-start=\"2328\" data-end=\"2337\" data-col-size=\"sm\">Reinheit<\/td>\n<td data-col-size=\"md\" data-start=\"2337\" data-end=\"2348\">\u2265 99.9%<\/td>\n<\/tr>\n<tr data-start=\"2349\" data-end=\"2374\">\n<td data-start=\"2349\" data-end=\"2359\" data-col-size=\"sm\">Dichte<\/td>\n<td data-col-size=\"md\" data-start=\"2359\" data-end=\"2374\">\u2265 3,1 g\/cm\u00b3<\/td>\n<\/tr>\n<tr data-start=\"2375\" data-end=\"2408\">\n<td data-start=\"2375\" data-end=\"2392\" data-col-size=\"sm\">Durchmesser (Max)<\/td>\n<td data-col-size=\"md\" data-start=\"2392\" data-end=\"2408\">bis zu 370 mm<\/td>\n<\/tr>\n<tr data-start=\"2409\" data-end=\"2451\">\n<td data-start=\"2409\" data-end=\"2421\" data-col-size=\"sm\">Dicke<\/td>\n<td data-col-size=\"md\" data-start=\"2421\" data-end=\"2451\">Benutzerdefiniert (normalerweise 5-30 mm)<\/td>\n<\/tr>\n<tr data-start=\"2452\" data-end=\"2487\">\n<td data-start=\"2452\" data-end=\"2472\" data-col-size=\"sm\">Widerstandsf\u00e4higkeit (niedrig)<\/td>\n<td data-col-size=\"md\" data-start=\"2472\" data-end=\"2487\">&lt; 0,02 \u03a9-cm<\/td>\n<\/tr>\n<tr data-start=\"2488\" data-end=\"2528\">\n<td data-start=\"2488\" data-end=\"2511\" data-col-size=\"sm\">Spezifischer Widerstand (Medium)<\/td>\n<td data-col-size=\"md\" data-start=\"2511\" data-end=\"2528\">0,2 - 25 \u03a9-cm<\/td>\n<\/tr>\n<tr data-start=\"2529\" data-end=\"2564\">\n<td data-start=\"2529\" data-end=\"2550\" data-col-size=\"sm\">Widerstandsf\u00e4higkeit (hoch)<\/td>\n<td data-col-size=\"md\" data-start=\"2550\" data-end=\"2564\">&gt; 100 \u03a9-cm<\/td>\n<\/tr>\n<tr data-start=\"2565\" data-end=\"2604\">\n<td data-start=\"2565\" data-end=\"2596\" data-col-size=\"sm\">Gleichm\u00e4\u00dfigkeit des Widerstands (RRG)<\/td>\n<td data-col-size=\"md\" data-start=\"2596\" data-end=\"2604\">&lt; 5%<\/td>\n<\/tr>\n<tr data-start=\"2605\" data-end=\"2670\">\n<td data-start=\"2605\" data-end=\"2625\" data-col-size=\"sm\">Zustand der Oberfl\u00e4che<\/td>\n<td data-col-size=\"md\" data-start=\"2625\" data-end=\"2670\">Geschliffen (Polieren auf Anfrage m\u00f6glich)<\/td>\n<\/tr>\n<tr data-start=\"2671\" data-end=\"2723\">\n<td data-start=\"2671\" data-end=\"2696\" data-col-size=\"sm\">Oberfl\u00e4chenrauhigkeit (Ra)<\/td>\n<td data-col-size=\"md\" data-start=\"2696\" data-end=\"2723\">\u2264 1,6 \u03bcm (anpassbar)<\/td>\n<\/tr>\n<tr data-start=\"2724\" data-end=\"2757\">\n<td data-start=\"2724\" data-end=\"2746\" data-col-size=\"sm\">Pr\u00e4zision in der Bearbeitung<\/td>\n<td data-col-size=\"md\" data-start=\"2746\" data-end=\"2757\">&lt; 10 \u03bcm<\/td>\n<\/tr>\n<tr data-start=\"2758\" data-end=\"2799\">\n<td data-start=\"2758\" data-end=\"2781\" data-col-size=\"sm\">W\u00e4rmeleitf\u00e4higkeit<\/td>\n<td data-col-size=\"md\" data-start=\"2781\" data-end=\"2799\">~120-200 W\/m-K<\/td>\n<\/tr>\n<tr data-start=\"2800\" data-end=\"2824\">\n<td data-start=\"2800\" data-end=\"2811\" data-col-size=\"sm\">H\u00e4rte<\/td>\n<td data-col-size=\"md\" data-start=\"2811\" data-end=\"2824\">~9,2 Mohs<\/td>\n<\/tr>\n<tr data-start=\"2825\" data-end=\"2883\">\n<td data-start=\"2825\" data-end=\"2843\" data-col-size=\"sm\">Qualit\u00e4tskontrolle<\/td>\n<td data-col-size=\"md\" data-start=\"2843\" data-end=\"2883\">Frei von Rissen, Abplatzungen, Verunreinigungen<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<hr data-start=\"2885\" data-end=\"2888\" \/>\n<h2 data-section-id=\"1gggyhy\" data-start=\"2890\" data-end=\"2910\">Anwendungen<\/h2>\n<p data-start=\"2911\" data-end=\"3025\">SiC-Ringe sind wesentliche Komponenten in Halbleiteranlagen, bei denen Haltbarkeit und Plasmabest\u00e4ndigkeit entscheidend sind:<\/p>\n<ul data-start=\"3027\" data-end=\"3241\">\n<li data-section-id=\"qzqq98\" data-start=\"3027\" data-end=\"3065\">Plasma-\u00c4tzsysteme (ICP \/ RIE)<\/li>\n<li data-section-id=\"1iourx1\" data-start=\"3066\" data-end=\"3109\">Chemische Gasphasenabscheidung (CVD \/ PECVD)<\/li>\n<li data-section-id=\"yfc3l\" data-start=\"3110\" data-end=\"3149\">Fokussierring\/Randring-Anwendungen<\/li>\n<li data-section-id=\"14j8f1u\" data-start=\"3150\" data-end=\"3193\">Schachtauskleidung und Schutzkomponenten<\/li>\n<li data-section-id=\"1l8pbfg\" data-start=\"3194\" data-end=\"3241\">Hochdichte Plasmabearbeitungsumgebungen<\/li>\n<\/ul>\n<p data-start=\"3243\" data-end=\"3383\">Sie eignen sich besonders f\u00fcr fortgeschrittene Knotenpunkte und raue \u00c4tzprozesse, bei denen Siliziumkomponenten die Anforderungen an die Lebensdauer nicht erf\u00fcllen k\u00f6nnen.<\/p>\n<p data-start=\"3243\" data-end=\"3383\"><img decoding=\"async\" class=\"aligncenter wp-image-2393 size-large\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva-1024x511.jpg\" alt=\"\" width=\"1024\" height=\"511\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva-1024x511.jpg 1024w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva-300x150.jpg 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva-768x383.jpg 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva-18x9.jpg 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva-600x299.jpg 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/V-XNjEkVLOxdQ3vNkqwRlwTnQIJEWLvn8yKCuqVOt3LGwjYhcj9HcJSqdlRSxOCdMdZ33IUySbpwQnVceltXtWhkg6VNrYi_ptiSJF92Api4RpFrek_-pbJFl5pgNytSMfwNYWSx43dQ6jT4QYV9yjBEYcR61Je4jzErkENr5eeHHxdHesqnUnHvdt1ORiva.jpg 1080w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/p>\n<hr data-start=\"3385\" data-end=\"3388\" \/>\n<h2 data-section-id=\"j4gip\" data-start=\"3390\" data-end=\"3436\">Warum sollten Sie sich f\u00fcr einen SiC-Ring und nicht f\u00fcr einen Siliziumring entscheiden?<\/h2>\n<p data-start=\"3437\" data-end=\"3702\">Im Vergleich zu herk\u00f6mmlichen Siliziumringen bieten SiC-Ringe eine erhebliche Verbesserung der Lebensdauer und Prozessstabilit\u00e4t. W\u00e4hrend Siliziumringe anfangs kosteng\u00fcnstiger sind, verschlei\u00dfen sie unter aggressiven Plasmabedingungen schneller und m\u00fcssen h\u00e4ufiger ausgetauscht werden.<\/p>\n<p data-start=\"3704\" data-end=\"3742\">SiC-Ringe hingegen bieten:<\/p>\n<ul data-start=\"3743\" data-end=\"3903\">\n<li data-section-id=\"17mv8nk\" data-start=\"3743\" data-end=\"3772\">3-10x l\u00e4ngere Lebensdauer<\/li>\n<li data-section-id=\"16lo0t8\" data-start=\"3773\" data-end=\"3820\">Bessere Best\u00e4ndigkeit gegen chemische Korrosion<\/li>\n<li data-section-id=\"19uuz0f\" data-start=\"3821\" data-end=\"3857\">Geringere Partikelverschmutzung<\/li>\n<li data-section-id=\"uhpkja\" data-start=\"3858\" data-end=\"3903\">Geringere Ausfallzeiten und Wartungskosten<\/li>\n<\/ul>\n<p data-start=\"3905\" data-end=\"4056\">Bei der Herstellung von High-End-Halbleitern sind die Gesamtbetriebskosten (TCO) bei der Verwendung von SiC-Komponenten trotz der h\u00f6heren Anschaffungskosten oft niedriger.<\/p>\n<p data-start=\"3905\" data-end=\"4056\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-2383 size-large aligncenter\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/\u5fae\u4fe1\u56fe\u7247_20260423181006_366_381-1024x486.png\" alt=\"\" width=\"1024\" height=\"486\" srcset=\"\" sizes=\"(max-width: 1024px) 100vw, 1024px\" data-srcset=\"\" \/><\/p>\n<hr data-start=\"4058\" data-end=\"4061\" \/>\n<h2 data-section-id=\"cpu4ih\" data-start=\"4063\" data-end=\"4074\">FAQ<\/h2>\n<p data-start=\"4076\" data-end=\"4283\">F1: Ist der SiC-Ring ein Verbrauchsprodukt?<br data-start=\"4121\" data-end=\"4124\" \/>Ja, es wird als kritisches Halbleiter-Verbrauchsmaterial betrachtet. Obwohl es eine l\u00e4ngere Lebensdauer als Siliziumteile hat, wird es unter Plasmaeinwirkung irgendwann verschlei\u00dfen.<\/p>\n<p data-start=\"4285\" data-end=\"4492\">F2: Was ist der Vorteil von CVD-SiC-Material?<br data-start=\"4335\" data-end=\"4338\" \/>CVD-SiC bietet eine extrem hohe Reinheit, eine dichte Struktur und eine hervorragende Best\u00e4ndigkeit gegen Plasma und Chemikalien, was es ideal f\u00fcr Halbleiteranwendungen macht.<\/p>\n<p data-start=\"4494\" data-end=\"4668\">Q3: Kann der SiC-Ring individuell angepasst werden?<br data-start=\"4533\" data-end=\"4536\" \/>Ja. Durchmesser, Dicke, Widerstandsf\u00e4higkeit und Oberfl\u00e4chenbehandlung k\u00f6nnen auf der Grundlage Ihrer Zeichnungen oder Ausr\u00fcstungsanforderungen angepasst werden.<\/p>\n<p data-start=\"4670\" data-end=\"4814\">F4: Wie lange h\u00e4lt ein SiC-Ring im Vergleich zu einem Siliziumring?<br data-start=\"4735\" data-end=\"4738\" \/>In der Regel halten SiC-Ringe je nach Prozessbedingungen 3-10 mal l\u00e4nger.<\/p>\n<p data-start=\"4816\" data-end=\"4928\">F5: Wie lange ist die Vorlaufzeit?<br data-start=\"4846\" data-end=\"4849\" \/>Die Produktion dauert in der Regel 4-8 Wochen, je nach Komplexit\u00e4t des Designs und Menge.<\/p>","protected":false},"excerpt":{"rendered":"<p>Der SiC-Ring (Siliziumkarbidring) ist eine Hochleistungskomponente, die h\u00e4ufig in Halbleiter-Plasmabearbeitungsanlagen, insbesondere in \u00c4tz- und Abscheidekammern, eingesetzt wird. Hergestellt aus CVD-Siliciumcarbid (Chemical Vapor Deposition), bietet dieses Produkt eine au\u00dfergew\u00f6hnliche Best\u00e4ndigkeit gegen Plasmaerosion, hohe Temperaturen und aggressive chemische 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