{"id":2327,"date":"2026-04-21T06:21:20","date_gmt":"2026-04-21T06:21:20","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2327"},"modified":"2026-04-21T06:21:21","modified_gmt":"2026-04-21T06:21:21","slug":"wafer-thinning-system-precision-back-grinding-equipment-for-si-sic-and-4-to-12-inch-semiconductor-wafers","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/de\/product\/wafer-thinning-system-precision-back-grinding-equipment-for-si-sic-and-4-to-12-inch-semiconductor-wafers\/","title":{"rendered":"Wafer-D\u00fcnnungssystem Pr\u00e4zisionsr\u00fcckschleifanlage f\u00fcr Si SiC und 4 bis 12 Zoll Halbleiterwafer"},"content":{"rendered":"<p data-start=\"294\" data-end=\"629\"><img fetchpriority=\"high\" decoding=\"async\" class=\"alignright wp-image-2329 size-medium\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity2-300x300.webp\" alt=\"Wafer-D\u00fcnnungssystem Pr\u00e4zisionsr\u00fcckschleifanlage f\u00fcr Si SiC und 4 bis 12 Zoll Halbleiterwafer\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity2-300x300.webp 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity2-150x150.webp 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity2-12x12.webp 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity2-600x600.webp 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity2-100x100.webp 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity2.webp 750w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Das Wafer Thinning System Precision Back Grinding Equipment ist eine hochpr\u00e4zise L\u00f6sung f\u00fcr die Waferbearbeitung, die f\u00fcr die moderne Halbleiterfertigung entwickelt wurde. Sie eignet sich f\u00fcr 4-Zoll- bis 12-Zoll-Wafer, einschlie\u00dflich Silizium (Si), Siliziumkarbid (SiC), Galliumarsenid (GaAs), Saphir und andere spr\u00f6de Verbindungshalbleitermaterialien.<\/p>\n<p data-start=\"631\" data-end=\"924\">Dieses System wurde f\u00fcr die hochpr\u00e4zise Ausd\u00fcnnung der Waferr\u00fcckseite entwickelt und erm\u00f6glicht eine Dickenreduzierung auf Mikrometer- und Submikrometer-Niveau bei gleichzeitiger Beibehaltung einer hervorragenden Oberfl\u00e4chenintegrit\u00e4t. Es spielt eine wichtige Rolle bei der Herstellung von modernen Verpackungen, Leistungsger\u00e4ten, MEMS und Verbindungshalbleitern.<\/p>\n<p data-start=\"926\" data-end=\"1135\">Durch die Integration einer hochsteifen mechanischen Konstruktion, einer pr\u00e4zisen Z-Achsen-Steuerung und einer Echtzeit-Dicken\u00fcberwachung gew\u00e4hrleistet das Ger\u00e4t eine stabile und wiederholbare Verarbeitungsleistung f\u00fcr die industrielle Produktion.<\/p>\n<hr data-start=\"1137\" data-end=\"1140\" \/>\n<h2 data-section-id=\"17sw59i\" data-start=\"1142\" data-end=\"1171\"><span role=\"text\">Technische Hauptmerkmale<\/span><\/h2>\n<h3 data-section-id=\"kcynyn\" data-start=\"1173\" data-end=\"1213\"><span role=\"text\">Hochpr\u00e4zise Dickenkontrolle<\/span><\/h3>\n<ul data-start=\"1214\" data-end=\"1353\">\n<li data-section-id=\"qvz3ew\" data-start=\"1214\" data-end=\"1245\">Dickengenauigkeit: \u00b11 \u03bcm<\/li>\n<li data-section-id=\"vbuidj\" data-start=\"1246\" data-end=\"1290\">Gesamtdickenabweichung (TTV): \u22642 \u03bcm<\/li>\n<li data-section-id=\"rxazu8\" data-start=\"1291\" data-end=\"1353\">Fortgeschrittene Modelle erreichen Submikrometer-Kontrolle bis zu \u00b10,5 \u03bcm<\/li>\n<\/ul>\n<h3 data-section-id=\"15s8v24\" data-start=\"1355\" data-end=\"1390\"><span role=\"text\"><img decoding=\"async\" class=\"size-medium wp-image-2330 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity-300x300.webp\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity-300x300.webp 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity-150x150.webp 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity-12x12.webp 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity-600x600.webp 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity-100x100.webp 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/wafer_thinning_system_precision_thinning_equipment_sic_si_wafer_compatible_4_12inch_wafer_capacity.webp 750w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Breite Materialkompatibilit\u00e4t<\/span><\/h3>\n<p data-start=\"1391\" data-end=\"1452\">Unterst\u00fctzt eine breite Palette von Halbleitern und spr\u00f6den Materialien:<\/p>\n<ul data-start=\"1453\" data-end=\"1574\">\n<li data-section-id=\"1mmq8pa\" data-start=\"1453\" data-end=\"1467\">Silizium (Si)<\/li>\n<li data-section-id=\"1ah49cn\" data-start=\"1468\" data-end=\"1491\">Siliziumkarbid (SiC)<\/li>\n<li data-section-id=\"6pubop\" data-start=\"1492\" data-end=\"1517\">Galliumarsenid (GaAs)<\/li>\n<li data-section-id=\"pz60z2\" data-start=\"1518\" data-end=\"1536\">Saphir (Al\u2082O\u2083)<\/li>\n<li data-section-id=\"1x0u20i\" data-start=\"1537\" data-end=\"1574\">Andere Verbindungshalbleiter-Wafer<\/li>\n<\/ul>\n<h3 data-section-id=\"1k27fm2\" data-start=\"1576\" data-end=\"1608\"><span role=\"text\">Kompatibilit\u00e4t der Wafergr\u00f6\u00dfen<\/span><\/h3>\n<ul data-start=\"1609\" data-end=\"1726\">\n<li data-section-id=\"fhdptx\" data-start=\"1609\" data-end=\"1662\">4-Zoll \/ 6-Zoll \/ 8-Zoll \/ 10-Zoll \/ 12-Zoll-Waffeln<\/li>\n<li data-section-id=\"5k0pa3\" data-start=\"1663\" data-end=\"1726\">Flexible Handhabung sowohl f\u00fcr Standard- als auch f\u00fcr kundenspezifische Substrate<\/li>\n<\/ul>\n<h3 data-section-id=\"rmjxfn\" data-start=\"1728\" data-end=\"1768\"><span role=\"text\">Hochstabiles mechanisches System<\/span><\/h3>\n<ul data-start=\"1769\" data-end=\"1949\">\n<li data-section-id=\"1wor6l0\" data-start=\"1769\" data-end=\"1804\">Luftgelagerte Spindel mit hoher Steifigkeit<\/li>\n<li data-section-id=\"7gqyrg\" data-start=\"1805\" data-end=\"1848\">Vibrationsarme Pr\u00e4zisionsschleifplattform<\/li>\n<li data-section-id=\"wf9b1q\" data-start=\"1849\" data-end=\"1892\">Importierte Kugelumlaufspindel + lineares F\u00fchrungssystem<\/li>\n<li data-section-id=\"fj2519\" data-start=\"1893\" data-end=\"1949\">Hochpr\u00e4zise Servomotorsteuerung (0,1 \u03bcm Aufl\u00f6sung)<\/li>\n<\/ul>\n<h3 data-section-id=\"1e5oiya\" data-start=\"1951\" data-end=\"1982\"><span role=\"text\">Fortschrittliches K\u00fchlsystem<\/span><\/h3>\n<ul data-start=\"1983\" data-end=\"2088\">\n<li data-section-id=\"1u6gyvp\" data-start=\"1983\" data-end=\"2038\">Wassergek\u00fchltes Spindelsystem gew\u00e4hrleistet thermische Stabilit\u00e4t<\/li>\n<li data-section-id=\"1927cdq\" data-start=\"2039\" data-end=\"2088\">Verhindert Verformungen beim Hochgeschwindigkeitsschleifen<\/li>\n<\/ul>\n<hr data-start=\"2090\" data-end=\"2093\" \/>\n<h2 data-section-id=\"1ftdxrk\" data-start=\"2095\" data-end=\"2122\"><span role=\"text\">System-Konfiguration<\/span><\/h2>\n<p data-start=\"2124\" data-end=\"2189\">Das Wafer Thinning System integriert mehrere Funktionsmodule:<\/p>\n<h3 data-section-id=\"djoygz\" data-start=\"2191\" data-end=\"2227\"><span role=\"text\">1. Modul Pr\u00e4zisionsschleifen<\/span><\/h3>\n<p data-start=\"2228\" data-end=\"2294\">F\u00fchrt einen kontrollierten Materialabtrag mit hoher Oberfl\u00e4chengleichm\u00e4\u00dfigkeit durch.<\/p>\n<h3 data-section-id=\"gytvay\" data-start=\"2296\" data-end=\"2338\"><span role=\"text\">2. Pr\u00e4zisionssteuerung der Z-Achse<\/span><\/h3>\n<p data-start=\"2339\" data-end=\"2409\">Erm\u00f6glicht eine ultrafeine vertikale Einstellung f\u00fcr eine konstante Waferdicke.<\/p>\n<h3 data-section-id=\"i93eki\" data-start=\"2411\" data-end=\"2450\"><span role=\"text\">3. System zur Dickenmessung<\/span><\/h3>\n<p data-start=\"2451\" data-end=\"2519\">Die ber\u00fchrende\/ber\u00fchrungslose Messung in Echtzeit gew\u00e4hrleistet Prozessstabilit\u00e4t.<\/p>\n<h3 data-section-id=\"ycd038\" data-start=\"2521\" data-end=\"2550\"><span role=\"text\">4. Vakuum-Wafer-Chuck<\/span><\/h3>\n<p data-start=\"2551\" data-end=\"2626\">Sichere Fixierung von Wafern, einschlie\u00dflich ma\u00dfgeschneiderter L\u00f6sungen f\u00fcr unregelm\u00e4\u00dfige Wafer.<\/p>\n<h3 data-section-id=\"1xwcykg\" data-start=\"2628\" data-end=\"2664\"><span role=\"text\">5. Automation Control System<\/span><\/h3>\n<ul data-start=\"2665\" data-end=\"2767\">\n<li data-section-id=\"mbtl4z\" data-start=\"2665\" data-end=\"2706\">Voll-Automatik \/ Halb-Automatik Betriebsarten<\/li>\n<li data-section-id=\"1tpxb04\" data-start=\"2707\" data-end=\"2734\">Aufzeichnung des Betriebsprotokolls<\/li>\n<li data-section-id=\"1chqk9c\" data-start=\"2735\" data-end=\"2767\">Rezepturgest\u00fctzte Prozesssteuerung<\/li>\n<\/ul>\n<hr data-start=\"2769\" data-end=\"2772\" \/>\n<h2 data-section-id=\"gimyd4\" data-start=\"2774\" data-end=\"2804\"><span role=\"text\"><img decoding=\"async\" class=\"wp-image-2331 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Wafer-Thinning-System-Precision-Back-Grinding-Equipment-for-Si-SiC-and-4-to-12-Inch-Semiconductor-Wafers2-300x81.png\" alt=\"\" width=\"393\" height=\"106\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Wafer-Thinning-System-Precision-Back-Grinding-Equipment-for-Si-SiC-and-4-to-12-Inch-Semiconductor-Wafers2-300x81.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Wafer-Thinning-System-Precision-Back-Grinding-Equipment-for-Si-SiC-and-4-to-12-Inch-Semiconductor-Wafers2-18x5.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Wafer-Thinning-System-Precision-Back-Grinding-Equipment-for-Si-SiC-and-4-to-12-Inch-Semiconductor-Wafers2-600x162.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Wafer-Thinning-System-Precision-Back-Grinding-Equipment-for-Si-SiC-and-4-to-12-Inch-Semiconductor-Wafers2.png 680w\" sizes=\"(max-width: 393px) 100vw, 393px\" \/> Verarbeitungskapazit\u00e4ten<\/span><\/h2>\n<p data-start=\"2806\" data-end=\"2876\">Das System ist f\u00fcr die Hochleistungsbearbeitung der Waferr\u00fcckseite konzipiert:<\/p>\n<ul data-start=\"2878\" data-end=\"3074\">\n<li data-section-id=\"xh3w3z\" data-start=\"2878\" data-end=\"2909\">R\u00fcckw\u00e4rtsschleifen von Siliziumwafern<\/li>\n<li data-section-id=\"xar9m4\" data-start=\"2910\" data-end=\"2950\">Ausd\u00fcnnen von SiC-Wafern f\u00fcr Leistungsbauelemente<\/li>\n<li data-section-id=\"198a8mj\" data-start=\"2951\" data-end=\"2986\">Ausd\u00fcnnung von GaN- und GaAs-Substraten<\/li>\n<li data-section-id=\"2lf608\" data-start=\"2987\" data-end=\"3024\">Pr\u00e4zisionsd\u00fcnnen von Saphirwafern<\/li>\n<li data-section-id=\"1kfyhfx\" data-start=\"3025\" data-end=\"3074\">Vorbereitung ultrad\u00fcnner Wafer f\u00fcr das 3D-Packaging<\/li>\n<\/ul>\n<hr data-start=\"3076\" data-end=\"3079\" \/>\n<h2 data-section-id=\"k0zlak\" data-start=\"3081\" data-end=\"3100\"><span role=\"text\">Anwendungen<\/span><\/h2>\n<h3 data-section-id=\"1jqwtfq\" data-start=\"3102\" data-end=\"3140\"><span role=\"text\">1. Leistungshalbleiterger\u00e4te<\/span><\/h3>\n<p data-start=\"3141\" data-end=\"3222\">Verwendung in SiC-MOSFETs, IGBTs und Hochspannungsger\u00e4ten, die ultrad\u00fcnne Wafer erfordern.<\/p>\n<h3 data-section-id=\"1a6priz\" data-start=\"3224\" data-end=\"3253\"><span role=\"text\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-2332 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application3-300x188.png\" alt=\"\" width=\"421\" height=\"264\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application3-300x188.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application3-18x12.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application3-600x376.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/application3.png 680w\" sizes=\"(max-width: 421px) 100vw, 421px\" \/>2. Fortschrittliche Verpackung<\/span><\/h3>\n<p data-start=\"3254\" data-end=\"3282\">Unterst\u00fctzt das Ausd\u00fcnnen von Wafern f\u00fcr:<\/p>\n<ul data-start=\"3283\" data-end=\"3375\">\n<li data-section-id=\"18hyzkr\" data-start=\"3283\" data-end=\"3306\">Flip-Chip-Verpackung<\/li>\n<li data-section-id=\"16lrd61\" data-start=\"3307\" data-end=\"3335\">2.5D \/ 3D IC-Integration<\/li>\n<li data-section-id=\"1s3z3q5\" data-start=\"3336\" data-end=\"3375\">TSV-Verfahren (Through Silicon Via)<\/li>\n<\/ul>\n<h3 data-section-id=\"m46f4y\" data-start=\"3377\" data-end=\"3411\"><span role=\"text\">3. Zusammengesetzte Halbleiter<\/span><\/h3>\n<p data-start=\"3412\" data-end=\"3464\">Anwendbar f\u00fcr die Herstellung von GaN-, GaAs- und InP-Bauteilen.<\/p>\n<h3 data-section-id=\"kz928f\" data-start=\"3466\" data-end=\"3500\"><span role=\"text\">4. LED und Optoelektronik<\/span><\/h3>\n<p data-start=\"3501\" data-end=\"3572\">Ausd\u00fcnnen von Saphir- und Verbundwafern f\u00fcr LED-Chips und optische Ger\u00e4te.<\/p>\n<hr data-start=\"3574\" data-end=\"3577\" \/>\n<h2 data-section-id=\"d8omv1\" data-start=\"3579\" data-end=\"3596\"><span role=\"text\">Vorteile<\/span><\/h2>\n<ul data-start=\"3598\" data-end=\"3893\">\n<li data-section-id=\"u42zog\" data-start=\"3598\" data-end=\"3645\">Ausgereifte und stabile Technologie zur Ausd\u00fcnnung von Wafern<\/li>\n<li data-section-id=\"1pb253f\" data-start=\"3646\" data-end=\"3688\">Hochpr\u00e4zises Einstechschleifsystem<\/li>\n<li data-section-id=\"1b2hrea\" data-start=\"3689\" data-end=\"3728\">Hervorragende Kontrolle der Oberfl\u00e4chenrauhigkeit<\/li>\n<li data-section-id=\"swoy5t\" data-start=\"3729\" data-end=\"3787\">Hohe UPH (bis zu 30 Wafer\/Stunde f\u00fcr Standardprozesse)<\/li>\n<li data-section-id=\"folyym\" data-start=\"3788\" data-end=\"3842\">Starke Anpassungsf\u00e4higkeit f\u00fcr spr\u00f6de und harte Materialien<\/li>\n<li data-section-id=\"kkjwmp\" data-start=\"3843\" data-end=\"3893\">Vollst\u00e4ndig automatisierte Prozessintegration<\/li>\n<\/ul>\n<hr data-start=\"3895\" data-end=\"3898\" \/>\n<h2 data-section-id=\"1nn32qm\" data-start=\"3900\" data-end=\"3929\"><span role=\"text\">H\u00f6hepunkte der Leistung<\/span><\/h2>\n<ul data-start=\"3931\" data-end=\"4171\">\n<li data-section-id=\"ndqugr\" data-start=\"3931\" data-end=\"3980\">Minimale Aufl\u00f6sung: 0,1 \u03bcm\/s Steuerung der Z-Achse<\/li>\n<li data-section-id=\"1sfyown\" data-start=\"3981\" data-end=\"4020\">Dickengleichm\u00e4\u00dfigkeit: \u22641-2 \u03bcm TTV<\/li>\n<li data-section-id=\"2ioyhe\" data-start=\"4021\" data-end=\"4066\">Hochgeschwindigkeitsspindel mit extrem niedriger Vibration<\/li>\n<li data-section-id=\"1svxu2t\" data-start=\"4067\" data-end=\"4109\">Prozess\u00fcberwachung und -protokollierung in Echtzeit<\/li>\n<li data-section-id=\"kjsadr\" data-start=\"4110\" data-end=\"4171\">Kompatibel sowohl mit F&amp;E- als auch mit Massenproduktionsumgebungen<\/li>\n<\/ul>\n<hr data-start=\"4173\" data-end=\"4176\" \/>\n<h2 data-section-id=\"lalgo8\" data-start=\"4178\" data-end=\"4206\"><span role=\"text\">Anpassungsoptionen<\/span><\/h2>\n<p data-start=\"4208\" data-end=\"4273\">Wir bieten flexible Anpassungen f\u00fcr unterschiedliche industrielle Anforderungen:<\/p>\n<ul data-start=\"4275\" data-end=\"4459\">\n<li data-section-id=\"kmxap1\" data-start=\"4275\" data-end=\"4315\">Kundenspezifische Wafer Chucks (unregelm\u00e4\u00dfige Formen)<\/li>\n<li data-section-id=\"1om94rb\" data-start=\"4316\" data-end=\"4368\">Erweiterter Dickenmessbereich (bis zu 40 mm)<\/li>\n<li data-section-id=\"1gmsugm\" data-start=\"4369\" data-end=\"4399\">Anpassung von Prozessrezepten<\/li>\n<li data-section-id=\"enumxl\" data-start=\"4400\" data-end=\"4459\">Integration der Automatisierung in vor- und nachgelagerte Anlagen<\/li>\n<\/ul>\n<hr data-start=\"4461\" data-end=\"4464\" \/>\n<h2 data-section-id=\"elc90z\" data-start=\"4466\" data-end=\"4476\"><span role=\"text\">FAQ<\/span><\/h2>\n<h3 data-section-id=\"97umay\" data-start=\"4478\" data-end=\"4525\"><span role=\"text\">F1: Kann dieses System SiC-Wafer verarbeiten?<\/span><\/h3>\n<p data-start=\"4526\" data-end=\"4649\">Ja, es ist speziell f\u00fcr das Ausd\u00fcnnen von SiC-Wafern und das R\u00fcckseitenschleifen optimiert und eignet sich f\u00fcr Anwendungen in Leistungsbauelementen.<\/p>\n<h3 data-section-id=\"pwbsig\" data-start=\"4651\" data-end=\"4705\"><span role=\"text\">F2: Wie hoch ist die erreichbare Dickengenauigkeit?<\/span><\/h3>\n<p data-start=\"4706\" data-end=\"4802\">Standardmodelle erreichen \u00b11 \u03bcm, und High-End-Konfigurationen k\u00f6nnen \u00b10,5 \u03bcm mit TTV \u22641 \u03bcm erreichen.<\/p>\n<h3 data-section-id=\"4mq81u\" data-start=\"4804\" data-end=\"4848\"><span role=\"text\">F3: Unterst\u00fctzt es die vollst\u00e4ndige Automatisierung?<\/span><\/h3>\n<p data-start=\"4849\" data-end=\"4944\">Ja, je nach Produktionsanforderungen sind sowohl der Vollautomatik- als auch der Halbautomatikmodus verf\u00fcgbar.<\/p>","protected":false},"excerpt":{"rendered":"<p>Das Wafer Thinning System Precision Back Grinding Equipment ist eine hochpr\u00e4zise Wafer-Bearbeitungsl\u00f6sung f\u00fcr die moderne Halbleiterfertigung. Es eignet sich f\u00fcr 4-Zoll- bis 12-Zoll-Wafer, einschlie\u00dflich Silizium (Si), Siliziumkarbid (SiC), Galliumarsenid (GaAs), Saphir und andere spr\u00f6de Verbindungshalbleitermaterialien. Dieses System wurde f\u00fcr die ultrapr\u00e4zise Ausd\u00fcnnung der Waferr\u00fcckseite entwickelt und erm\u00f6glicht eine Dickenreduzierung auf Mikrometer- und Submikrometer-Niveau bei gleichzeitiger Aufrechterhaltung einer hervorragenden 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