{"id":2316,"date":"2026-04-21T06:05:44","date_gmt":"2026-04-21T06:05:44","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2316"},"modified":"2026-04-21T06:05:45","modified_gmt":"2026-04-21T06:05:45","slug":"ion-beam-etching-machine-for-si-sio2-and-metal-materials-in-semiconductor-fabrication","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/de\/product\/ion-beam-etching-machine-for-si-sio2-and-metal-materials-in-semiconductor-fabrication\/","title":{"rendered":"Ionenstrahl-\u00c4tzmaschine f\u00fcr Si SiO2 und Metallmaterialien in der Halbleiterfertigung"},"content":{"rendered":"<p data-start=\"297\" data-end=\"643\"><img fetchpriority=\"high\" decoding=\"async\" class=\"size-medium wp-image-2320 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-300x300.webp\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-300x300.webp 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-150x150.webp 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-12x12.webp 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-600x600.webp 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication-100x100.webp 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication.webp 750w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Die Ionenstrahl-\u00c4tzmaschine f\u00fcr Si-, SiO2- und Metallmaterialien ist ein hochpr\u00e4zises Trocken\u00e4tzsystem, das f\u00fcr fortschrittliche Mikrofabrikations- und Nanotechnologieanwendungen entwickelt wurde. Durch das Ionenstrahl\u00e4tzen (IBE), auch bekannt als Ionenfr\u00e4sen, erm\u00f6glicht diese Anlage einen hohen Materialabtrag durch einen rein physikalischen Sputterprozess.<\/p>\n<p data-start=\"645\" data-end=\"961\">Im Gegensatz zu herk\u00f6mmlichen plasmabasierten \u00c4tztechnologien wird das Substrat beim Ionenstrahl\u00e4tzen nicht direkt dem Plasma ausgesetzt. Dadurch wird das Risiko von plasmainduzierten Sch\u00e4den, Verunreinigungen und Ladungsansammlungen erheblich reduziert, was es besonders f\u00fcr die Herstellung empfindlicher Halbleiter und optischer Ger\u00e4te geeignet macht.<\/p>\n<p data-start=\"963\" data-end=\"1148\">Mit seiner Pr\u00e4zision im Nanometerbereich und seiner ausgezeichneten Prozesssteuerbarkeit findet dieses System breite Anwendung in der Halbleiterherstellung, der D\u00fcnnschichtverarbeitung und der Forschung an modernen Materialien.<\/p>\n<hr data-start=\"1150\" data-end=\"1153\" \/>\n<h2 data-section-id=\"17sw59i\" data-start=\"1155\" data-end=\"1184\"><span role=\"text\"><img decoding=\"async\" class=\"wp-image-2324 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-300x125.png\" alt=\"\" width=\"458\" height=\"191\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-300x125.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-18x7.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7-600x250.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication7.png 680w\" sizes=\"(max-width: 458px) 100vw, 458px\" \/>Technische Hauptmerkmale<\/span><\/h2>\n<ul data-start=\"1186\" data-end=\"1929\">\n<li data-section-id=\"7yo1gz\" data-start=\"1186\" data-end=\"1324\">Ultra-hohe Pr\u00e4zision<br data-start=\"1212\" data-end=\"1215\" \/>Erreicht eine \u00c4tzaufl\u00f6sung von \u226410 nm und erf\u00fcllt damit die Anforderungen der modernen Halbleiter- und Nanofabrikation.<\/li>\n<li data-section-id=\"csgjgf\" data-start=\"1326\" data-end=\"1497\">Nicht-selektives \u00c4tzen m\u00f6glich<br data-start=\"1364\" data-end=\"1367\" \/>Erm\u00f6glicht gleichm\u00e4\u00dfiges \u00c4tzen mehrerer Materialien, einschlie\u00dflich Metallen, Halbleitern und Dielektrika, ohne Abh\u00e4ngigkeit von Chemikalien.<\/li>\n<li data-section-id=\"1xlwjqh\" data-start=\"1499\" data-end=\"1667\">Anisotrope und gerichtete Steuerung<br data-start=\"1540\" data-end=\"1543\" \/>Einstellbare Ionenstrahlwinkel erm\u00f6glichen sowohl anisotrope als auch isotrope \u00c4tzprofile und unterst\u00fctzen die \u00dcbertragung komplexer Muster.<\/li>\n<li data-section-id=\"1ialgp0\" data-start=\"1669\" data-end=\"1793\">Plasmafreie Verarbeitungsumgebung<br data-start=\"1709\" data-end=\"1712\" \/>Eliminiert plasmainduzierte Sch\u00e4den und gew\u00e4hrleistet so eine h\u00f6here Zuverl\u00e4ssigkeit und Ausbeute der Ger\u00e4te.<\/li>\n<li data-section-id=\"1squn5z\" data-start=\"1795\" data-end=\"1929\">Ausgezeichnete Oberfl\u00e4chenqualit\u00e4t<br data-start=\"1826\" data-end=\"1829\" \/>Erzeugt glatte Oberfl\u00e4chen mit geringerer Rauheit, was f\u00fcr optische und elektronische Anwendungen entscheidend ist.<\/li>\n<\/ul>\n<hr data-start=\"1931\" data-end=\"1934\" \/>\n<h2 data-section-id=\"crb813\" data-start=\"1936\" data-end=\"1965\"><span role=\"text\">Kernkomponenten des Systems<\/span><\/h2>\n<p data-start=\"1967\" data-end=\"2042\">Ein komplettes Ionenstrahl-\u00c4tzsystem besteht aus mehreren kritischen Teilsystemen:<\/p>\n<h3 data-section-id=\"j86wbp\" data-start=\"2044\" data-end=\"2068\"><span role=\"text\">1. Vakuum-System<\/span><\/h3>\n<p data-start=\"2069\" data-end=\"2118\">Bietet eine Hochvakuumumgebung, die unerl\u00e4sslich ist f\u00fcr:<\/p>\n<ul data-start=\"2119\" data-end=\"2193\">\n<li data-section-id=\"1vzt3vq\" data-start=\"2119\" data-end=\"2137\">Stabilit\u00e4t des Tr\u00e4gers<\/li>\n<li data-section-id=\"svkbf3\" data-start=\"2138\" data-end=\"2163\">Kontrolle der Kontamination<\/li>\n<li data-section-id=\"19d0yza\" data-start=\"2164\" data-end=\"2193\">Hochpr\u00e4zise Verarbeitung<\/li>\n<\/ul>\n<h3 data-section-id=\"8jigvj\" data-start=\"2195\" data-end=\"2216\"><span role=\"text\">2. Ionenquelle<\/span><\/h3>\n<p data-start=\"2217\" data-end=\"2272\">Erzeugt einen hochenergetischen Ionenstrahl (in der Regel Argon-Ionen):<\/p>\n<ul data-start=\"2273\" data-end=\"2386\">\n<li data-section-id=\"116c4dh\" data-start=\"2273\" data-end=\"2315\">Bestimmt \u00c4tzrate und Gleichm\u00e4\u00dfigkeit<\/li>\n<li data-section-id=\"bdpzju\" data-start=\"2316\" data-end=\"2386\">Unterst\u00fctzt verschiedene Quellentypen wie RF- und Kaufman-Ionenquellen<\/li>\n<\/ul>\n<h3 data-section-id=\"1tpsqxl\" data-start=\"2388\" data-end=\"2411\"><span role=\"text\">3. Probephase<\/span><\/h3>\n<ul data-start=\"2412\" data-end=\"2530\">\n<li data-section-id=\"d3z3he\" data-start=\"2412\" data-end=\"2468\">Unterst\u00fctzt Mehrachsendrehung f\u00fcr gleichm\u00e4\u00dfiges \u00c4tzen<\/li>\n<li data-section-id=\"15yipgz\" data-start=\"2469\" data-end=\"2530\">Integrierte Temperaturkontrolle verbessert die Prozessstabilit\u00e4t<\/li>\n<\/ul>\n<h3 data-section-id=\"qoosxq\" data-start=\"2532\" data-end=\"2557\"><span role=\"text\">4. Kontrollsystem<\/span><\/h3>\n<ul data-start=\"2558\" data-end=\"2705\">\n<li data-section-id=\"1mqnqw1\" data-start=\"2558\" data-end=\"2587\">Vollst\u00e4ndig automatisierter Betrieb<\/li>\n<li data-section-id=\"ymbyxd\" data-start=\"2588\" data-end=\"2643\">Erm\u00f6glicht pr\u00e4zise Parametersteuerung und Wiederholbarkeit<\/li>\n<li data-section-id=\"1kjf28e\" data-start=\"2644\" data-end=\"2705\">Optionale Endpunkterkennung f\u00fcr erweiterte Prozesskontrolle<\/li>\n<\/ul>\n<h3 data-section-id=\"97rafg\" data-start=\"2707\" data-end=\"2729\"><span role=\"text\">5. Neutralisator<\/span><\/h3>\n<ul data-start=\"2730\" data-end=\"2836\">\n<li data-section-id=\"12j0ebp\" data-start=\"2730\" data-end=\"2772\">Verhindert den Aufbau von Ladungen beim \u00c4tzen<\/li>\n<li data-section-id=\"1o4nvb1\" data-start=\"2773\" data-end=\"2836\">Wesentlich f\u00fcr isolierende Materialien wie SiO\u2082 und Si\u2083N\u2084<\/li>\n<\/ul>\n<hr data-start=\"2838\" data-end=\"2841\" \/>\n<h2 data-section-id=\"sgqumq\" data-start=\"2843\" data-end=\"2867\"><span role=\"text\">Arbeitsprinzip<\/span><\/h2>\n<p data-start=\"2869\" data-end=\"3006\"><img decoding=\"async\" class=\"size-medium wp-image-2321 alignright\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-300x235.png\" alt=\"\" width=\"300\" height=\"235\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-300x235.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-15x12.png 15w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1-600x469.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-1.png 680w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Beim Ionenstrahl\u00e4tzen wird ein hochenergetischer, kollimierter Ionenstrahl unter Vakuumbedingungen auf die Oberfl\u00e4che des Zielmaterials gerichtet.<\/p>\n<p data-start=\"3008\" data-end=\"3253\">Die Ionen (in der Regel Ar\u207a) sto\u00dfen mit den Atomen der Oberfl\u00e4che zusammen, \u00fcbertragen einen Impuls und bewirken, dass die Atome durch physikalisches Sputtern herausgeschleudert werden. Bei diesem Verfahren wird das Material Schicht f\u00fcr Schicht abgetragen, was eine pr\u00e4zise Musterdefinition ohne chemische Reaktionen erm\u00f6glicht.<\/p>\n<p data-start=\"3255\" data-end=\"3296\">Damit ist IBE besonders geeignet f\u00fcr:<\/p>\n<ul data-start=\"3297\" data-end=\"3403\">\n<li data-section-id=\"jy9ydi\" data-start=\"3297\" data-end=\"3333\">Hochaufl\u00f6sende Muster\u00fcbertragung<\/li>\n<li data-section-id=\"1ihgsm0\" data-start=\"3334\" data-end=\"3376\">Materialien mit geringer chemischer Reaktivit\u00e4t<\/li>\n<li data-section-id=\"hl3mzt\" data-start=\"3377\" data-end=\"3403\">Mehrschichtige Strukturen<\/li>\n<\/ul>\n<hr data-start=\"3405\" data-end=\"3408\" \/>\n<h2 data-section-id=\"gimyd4\" data-start=\"3410\" data-end=\"3440\"><span role=\"text\">Verarbeitungskapazit\u00e4ten<\/span><\/h2>\n<h3 data-section-id=\"ww5vbk\" data-start=\"3442\" data-end=\"3469\"><span role=\"text\">Unterst\u00fctzte Materialien<\/span><\/h3>\n<ul data-start=\"3470\" data-end=\"3622\">\n<li data-section-id=\"4dwycu\" data-start=\"3470\" data-end=\"3504\">Metalle: Au, Pt, Cu, Ta, Al<\/li>\n<li data-section-id=\"12wc4i0\" data-start=\"3505\" data-end=\"3537\">Halbleiter: Si, GaAs<\/li>\n<li data-section-id=\"75kyg7\" data-start=\"3538\" data-end=\"3570\">Dielektrika: SiO\u2082, Si\u2083N\u2084<\/li>\n<li data-section-id=\"1xmdv1x\" data-start=\"3571\" data-end=\"3622\">Fortschrittliche Materialien: AlN, Keramiken, Polymere<\/li>\n<\/ul>\n<hr data-start=\"3624\" data-end=\"3627\" \/>\n<h2 data-section-id=\"12vl3dy\" data-start=\"3629\" data-end=\"3656\"><span role=\"text\">Typischer Prozessablauf<\/span><\/h2>\n<ol data-start=\"3658\" data-end=\"4078\">\n<li data-section-id=\"1lq2akh\" data-start=\"3658\" data-end=\"3742\">Vorbereitung der Probe<br data-start=\"3683\" data-end=\"3686\" \/>Reinigen und Montieren des Substrats in der Vakuumkammer<\/li>\n<li data-section-id=\"1uf7qj1\" data-start=\"3744\" data-end=\"3821\">Maskierung<br data-start=\"3758\" data-end=\"3761\" \/>Auftragen von Fotolack oder Metallmaske zur Definition der \u00c4tzbereiche<\/li>\n<li data-section-id=\"1sq3ygn\" data-start=\"3823\" data-end=\"3910\">Erzeugung von Ionenstrahlen<br data-start=\"3849\" data-end=\"3852\" \/>Aktivieren Sie die Ionenquelle mit Inertgas (normalerweise Argon)<\/li>\n<li data-section-id=\"46esbg\" data-start=\"3912\" data-end=\"4006\">\u00c4tzverfahren<br data-start=\"3934\" data-end=\"3937\" \/>Einstellung von Strahlenergie, Winkel und Zeit, um die gew\u00fcnschte Struktur zu erreichen<\/li>\n<li data-section-id=\"oeifr6\" data-start=\"4008\" data-end=\"4078\">Entfernen der Maske<br data-start=\"4027\" data-end=\"4030\" \/>Entfernen Sie die Maske, um die endg\u00fcltigen ge\u00e4tzten Muster zu sehen.<\/li>\n<\/ol>\n<hr data-start=\"4080\" data-end=\"4083\" \/>\n<h2 data-section-id=\"1myoacb\" data-start=\"4085\" data-end=\"4109\"><span role=\"text\">Anwendungsbereiche<\/span><\/h2>\n<h3 data-section-id=\"bm5nu5\" data-start=\"4111\" data-end=\"4146\"><span role=\"text\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-2322 aligncenter\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-300x65.png\" alt=\"\" width=\"724\" height=\"157\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-300x65.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-18x4.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6-600x130.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ion-Beam-Etching-Machine-for-Si-SiO2-and-Metal-Materials-in-Semiconductor-Fabrication6.png 680w\" sizes=\"(max-width: 724px) 100vw, 724px\" \/>Herstellung von Halbleitern<\/span><\/h3>\n<ul data-start=\"4147\" data-end=\"4236\">\n<li data-section-id=\"13vctk4\" data-start=\"4147\" data-end=\"4180\">Strukturierung integrierter Schaltungen<\/li>\n<li data-section-id=\"ofwy8d\" data-start=\"4181\" data-end=\"4206\">Strukturierung d\u00fcnner Schichten<\/li>\n<li data-section-id=\"1x3kzva\" data-start=\"4207\" data-end=\"4236\">Fortgeschrittene Herstellung von Knoten<\/li>\n<\/ul>\n<h3 data-section-id=\"1tse075\" data-start=\"4238\" data-end=\"4261\"><span role=\"text\">Optische Ger\u00e4te<\/span><\/h3>\n<ul data-start=\"4262\" data-end=\"4356\">\n<li data-section-id=\"v6a7ly\" data-start=\"4262\" data-end=\"4309\">Pr\u00e4zisionsbearbeitung von Gittern und Linsen<\/li>\n<li data-section-id=\"lq2w9m\" data-start=\"4310\" data-end=\"4356\">Oberfl\u00e4chenmodifikation von optischen Komponenten<\/li>\n<\/ul>\n<h3 data-section-id=\"1wc0my6\" data-start=\"4358\" data-end=\"4380\"><span role=\"text\">Nanotechnologie<\/span><\/h3>\n<ul data-start=\"4381\" data-end=\"4441\">\n<li data-section-id=\"178ey7v\" data-start=\"4381\" data-end=\"4441\">Herstellung von Nanodr\u00e4hten, Nanoporen und MEMS-Strukturen<\/li>\n<\/ul>\n<h3 data-section-id=\"krs816\" data-start=\"4443\" data-end=\"4468\"><span role=\"text\">Werkstoffkunde<\/span><\/h3>\n<ul data-start=\"4469\" data-end=\"4541\">\n<li data-section-id=\"18ntl16\" data-start=\"4469\" data-end=\"4506\">Oberfl\u00e4chenanalyse und -modifikation<\/li>\n<li data-section-id=\"1b8wqpz\" data-start=\"4507\" data-end=\"4541\">Vorbereitung der funktionellen Beschichtung<\/li>\n<\/ul>\n<hr data-start=\"4543\" data-end=\"4546\" \/>\n<h2 data-section-id=\"13lz0w7\" data-start=\"4548\" data-end=\"4591\"><span role=\"text\">Vorteile gegen\u00fcber konventionellem \u00c4tzen<\/span><\/h2>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"4593\" data-end=\"4927\">\n<thead data-start=\"4593\" data-end=\"4646\">\n<tr data-start=\"4593\" data-end=\"4646\">\n<th class=\"\" data-start=\"4593\" data-end=\"4603\" data-col-size=\"sm\">Merkmal<\/th>\n<th class=\"\" data-start=\"4603\" data-end=\"4622\" data-col-size=\"sm\">Ionenstrahl-\u00c4tzen<\/th>\n<th class=\"\" data-start=\"4622\" data-end=\"4646\" data-col-size=\"sm\">Reaktive Ionen\u00e4tzung<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"4697\" data-end=\"4927\">\n<tr data-start=\"4697\" data-end=\"4746\">\n<td data-start=\"4697\" data-end=\"4712\" data-col-size=\"sm\">Prozess-Typ<\/td>\n<td data-start=\"4712\" data-end=\"4723\" data-col-size=\"sm\">Physisch<\/td>\n<td data-start=\"4723\" data-end=\"4746\" data-col-size=\"sm\">Physikalisch + Chemisch<\/td>\n<\/tr>\n<tr data-start=\"4747\" data-end=\"4805\">\n<td data-start=\"4747\" data-end=\"4765\" data-col-size=\"sm\">Plasma-Exposition<\/td>\n<td data-start=\"4765\" data-end=\"4786\" data-col-size=\"sm\">Keine direkte Exposition<\/td>\n<td data-start=\"4786\" data-end=\"4805\" data-col-size=\"sm\">Direkte Exposition<\/td>\n<\/tr>\n<tr data-start=\"4806\" data-end=\"4853\">\n<td data-start=\"4806\" data-end=\"4829\" data-col-size=\"sm\">Materialselektivit\u00e4t<\/td>\n<td data-start=\"4829\" data-end=\"4845\" data-col-size=\"sm\">Niedrig (einheitlich)<\/td>\n<td data-start=\"4845\" data-end=\"4853\" data-col-size=\"sm\">Hoch<\/td>\n<\/tr>\n<tr data-start=\"4854\" data-end=\"4893\">\n<td data-start=\"4854\" data-end=\"4871\" data-col-size=\"sm\">Sch\u00e4den an der Oberfl\u00e4che<\/td>\n<td data-start=\"4871\" data-end=\"4881\" data-col-size=\"sm\">Minimal<\/td>\n<td data-start=\"4881\" data-end=\"4893\" data-col-size=\"sm\">M\u00f6glicherweise<\/td>\n<\/tr>\n<tr data-start=\"4894\" data-end=\"4927\">\n<td data-start=\"4894\" data-end=\"4906\" data-col-size=\"sm\">Pr\u00e4zision<\/td>\n<td data-start=\"4906\" data-end=\"4919\" data-col-size=\"sm\">Ultrahoch<\/td>\n<td data-start=\"4919\" data-end=\"4927\" data-col-size=\"sm\">Hoch<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<hr data-start=\"4929\" data-end=\"4932\" \/>\n<h2 data-section-id=\"elc90z\" data-start=\"4934\" data-end=\"4944\"><span role=\"text\">FAQ<\/span><\/h2>\n<h3 data-section-id=\"1h3z74f\" data-start=\"4946\" data-end=\"4978\"><span role=\"text\">Was ist Ionenstrahl\u00e4tzung\uff1f?<\/span><\/h3>\n<p data-start=\"4979\" data-end=\"5122\">Beim Ionenstrahl\u00e4tzen handelt es sich um ein Trocken\u00e4tzverfahren, bei dem Material durch physikalisches Sputtern mit hochenergetischen Ionen in einer Vakuumumgebung abgetragen wird.<\/p>\n<h3 data-section-id=\"1oyreis\" data-start=\"5124\" data-end=\"5153\"><span role=\"text\">Unterschied zwischen IBE und RIE\uff1f<\/span><\/h3>\n<ul data-start=\"5154\" data-end=\"5316\">\n<li data-section-id=\"6o7nxe\" data-start=\"5154\" data-end=\"5219\">IBE: rein physikalisch, kein Plasmakontakt, h\u00f6here Pr\u00e4zision<\/li>\n<li data-section-id=\"d79ynl\" data-start=\"5220\" data-end=\"5316\">RIE: kombiniert chemische Reaktionen mit Plasma, h\u00f6here Selektivit\u00e4t, aber h\u00f6heres Risiko von Sch\u00e4den<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Die Ionenstrahl-\u00c4tzmaschine f\u00fcr Si-, SiO2- und Metallmaterialien ist ein hochpr\u00e4zises Trocken\u00e4tzsystem, das f\u00fcr fortschrittliche Mikrofabrikations- und Nanotechnologieanwendungen entwickelt wurde. Durch das Ionenstrahl\u00e4tzen (IBE), auch bekannt als Ionenfr\u00e4sen, erm\u00f6glicht diese Anlage einen hohen Materialabtrag durch einen rein physikalischen Sputterprozess.<\/p>","protected":false},"featured_media":2320,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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