![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ti-Cu-Metal-Coated-Silicon-Wafer-Titanium-Copper-Sputtered-Wafer-for-MEMS-Microelectronics-1-300x300.png\")
K\u0159em\u00edkov\u00e9 desti\u010dky s kovov\u00fdm povlakem Ti\/Cu jsou navr\u017eeny jako standardn\u00ed vodiv\u00fd a procesn\u011b kompatibiln\u00ed substr\u00e1t pro pokro\u010dil\u00fd v\u00fdzkum a pr\u016fmyslov\u00e9 aplikace. Kombinac\u00ed technologie k\u0159em\u00edkov\u00fdch desti\u010dek s kovov\u00fdm tenkovrstv\u00fdm povlakem poskytuje stabiln\u00ed platformu pro elektrick\u00e9, chemick\u00e9 a mikrov\u00fdrobn\u00ed procesy.<\/p>\n
Struktura povlakov\u00e9ho syst\u00e9mu Ti\/Cu zaji\u0161\u0165uje mechanickou spolehlivost i funk\u010dn\u00ed vodivost. Je vhodn\u00fd zejm\u00e9na pro aplikace vy\u017eaduj\u00edc\u00ed spolehliv\u00e1 kovov\u00e1 rozhran\u00ed, rovnom\u011brnou povrchovou vodivost a kompatibilitu se standardn\u00edmi technikami zpracov\u00e1n\u00ed polovodi\u010d\u016f.<\/p>\n
Produkt umo\u017e\u0148uje p\u0159izp\u016fsoben\u00ed velikosti desti\u010dky, typu substr\u00e1tu a tlou\u0161\u0165ky vrstvy, tak\u017ee je vhodn\u00fd jak pro mal\u00e9 v\u00fdzkumn\u00e9 experimenty, tak pro pilotn\u00ed v\u00fdrobu.<\/p>\n
![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ti-Cu-Metal-Coated-Silicon-Wafer-Titanium-Copper-Sputtered-Wafer-for-MEMS-Microelectronics-4-300x300.png\")
Kl\u00ed\u010dov\u00e9 vlastnosti<\/strong><\/span><\/h2>\n![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ti-Cu-Metal-Coated-Silicon-Wafer-Titanium-Copper-Sputtered-Wafer-for-MEMS-Microelectronics-3-300x300.png\")
Typick\u00e1 struktura<\/strong><\/span><\/h2>\nSubstr\u00e1t + titanov\u00e1 adhezn\u00ed vrstva + m\u011bd\u011bn\u00e1 vodiv\u00e1 vrstva<\/strong><\/p>\n Vrstva Ti slou\u017e\u00ed jako spojovac\u00ed vrstva mezi substr\u00e1tem a m\u011bd\u011bnou vrstvou a zaji\u0161\u0165uje struktur\u00e1ln\u00ed stabilitu. Vrstva Cu zaji\u0161\u0165uje funk\u010dn\u00ed vodiv\u00fd povrch pro elektrick\u00e9 a procesn\u00ed aplikace.<\/p>\n Deska s kovov\u00fdm povlakem Ti\/Cu se vyr\u00e1b\u00ed pomoc\u00ed technologie vakuov\u00e9ho magnetronov\u00e9ho napra\u0161ov\u00e1n\u00ed. Nejprve se na vy\u010di\u0161t\u011bn\u00fd k\u0159em\u00edkov\u00fd povrch nanese vrstva titanu, aby se zlep\u0161ila p\u0159ilnavost. Pot\u00e9 se na titanovou vrstvu nanese m\u011bd\u011bn\u00e1 vrstva, kter\u00e1 vytvo\u0159\u00ed rovnom\u011brn\u00fd vodiv\u00fd povrch.<\/p>\n U aplikac\u00ed vy\u017eaduj\u00edc\u00edch siln\u011bj\u0161\u00ed m\u011bd\u011bn\u00e9 vrstvy lze napra\u0161ovanou m\u011bd\u011bnou vrstvu pou\u017e\u00edt jako z\u00e1rode\u010dnou vrstvu pro galvanick\u00e9 pokoven\u00ed, co\u017e umo\u017e\u0148uje dal\u0161\u00ed r\u016fst kovu, aby se dos\u00e1hlo mikronov\u00e9 tlou\u0161\u0165ky p\u0159i zachov\u00e1n\u00ed siln\u00e9 p\u0159ilnavosti.<\/p>\n Tento kombinovan\u00fd proces zaji\u0161\u0165uje vysokou kvalitu f\u00f3lie a flexibiln\u00ed funk\u010dn\u00ed roz\u0161\u00ed\u0159en\u00ed.<\/p>\n V porovn\u00e1n\u00ed s p\u0159\u00edm\u00fdm povlakov\u00e1n\u00edm m\u011bdi na k\u0159em\u00edku poskytuje struktura Ti\/Cu:<\/p>\n D\u00edky tomu je spolehliv\u011bj\u0161\u00edm \u0159e\u0161en\u00edm pro v\u00fdzkumn\u00e9 laborato\u0159e i pro pr\u016fmyslov\u00e9 prost\u0159ed\u00ed v\u00fdzkumu a v\u00fdvoje.<\/p>\n Ot\u00e1zka 1: Pro\u010d se titan pou\u017e\u00edv\u00e1 pod m\u011bd\u011bn\u00fdm povlakem?<\/strong> Ot\u00e1zka 2: Lze zv\u011bt\u0161it tlou\u0161\u0165ku m\u011bdi?<\/strong> Ot\u00e1zka 3: Lze potahovat ob\u011b strany oplatky?<\/strong> Ot\u00e1zka 4: Jak\u00e9 mo\u017enosti substr\u00e1tu jsou k dispozici?<\/strong> K\u0159em\u00edkov\u00e1 desti\u010dka s kovov\u00fdm povlakem Ti\/Cu je vysoce kvalitn\u00ed funk\u010dn\u00ed desti\u010dka p\u0159ipraven\u00e1 nanesen\u00edm titanov\u00e9 p\u0159ilnav\u00e9 vrstvy a m\u011bd\u011bn\u00e9 vodiv\u00e9 vrstvy na k\u0159em\u00edkov\u00fd substr\u00e1t pomoc\u00ed technologie magnetronov\u00e9ho napra\u0161ov\u00e1n\u00ed. Titanov\u00e1 vrstva zlep\u0161uje p\u0159ilnavost a stabilitu filmu, zat\u00edmco m\u011bd\u011bn\u00e1 vrstva zaji\u0161\u0165uje vynikaj\u00edc\u00ed elektrickou vodivost. Tento v\u00fdrobek se \u0161iroce pou\u017e\u00edv\u00e1 v mikroelektronice, p\u0159i v\u00fdrob\u011b MEMS, v laboratorn\u00edm v\u00fdzkumu a p\u0159i v\u00fdvoji tenkovrstv\u00fdch proces\u016f.<\/p>","protected":false},"featured_media":2428,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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\nSpecifikace<\/strong><\/span><\/h2>\n
\n\n\n\n
\n \nPolo\u017eka<\/th>\n Popis<\/th>\n<\/tr>\n<\/thead>\n \n Velikost oplatky<\/td>\n 2\u2033, 4\u2033, 6\u2033, 8\u2033, vlastn\u00ed velikosti<\/td>\n<\/tr>\n \n Materi\u00e1l substr\u00e1tu<\/td>\n K\u0159em\u00edk, k\u0159emen, sklo BF33 (voliteln\u00e9)<\/td>\n<\/tr>\n \n Orientace na krystaly<\/td>\n , atd.<\/td>\n<\/tr>\n \n Odolnost<\/td>\n N\u00edzk\u00e1 \/ st\u0159edn\u00ed \/ vysok\u00e1 (p\u0159izp\u016fsobiteln\u00e9)<\/td>\n<\/tr>\n \n Tlou\u0161\u0165ka Ti<\/td>\n 10-50 nm (typick\u00fd rozsah)<\/td>\n<\/tr>\n \n Tlou\u0161\u0165ka Cu<\/td>\n 50 nm - 1 \u00b5m (napra\u0161ov\u00e1n\u00ed), siln\u011bj\u0161\u00ed galvanick\u00fdm pokovov\u00e1n\u00edm<\/td>\n<\/tr>\n \n Metoda nan\u00e1\u0161en\u00ed povlaku<\/td>\n Magnetronov\u00e9 napra\u0161ov\u00e1n\u00ed<\/td>\n<\/tr>\n \n Strana n\u00e1t\u011bru<\/td>\n Jednostrann\u00fd nebo oboustrann\u00fd<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\n![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Ti-Cu-Metal-Coated-Silicon-Wafer-Titanium-Copper-Sputtered-Wafer-for-MEMS-Microelectronics-2-300x300.png\")
V\u00fdrobn\u00ed proces<\/strong><\/span><\/h2>\n
\nAplikace<\/strong><\/span><\/h2>\n
\n
\nV\u00fdhody v porovn\u00e1n\u00ed s jednotliv\u00fdmi kovov\u00fdmi povlaky<\/strong><\/span><\/h2>\n
\n
\n\u010cASTO KLADEN\u00c9 DOTAZY<\/strong><\/span><\/h2>\n
Titan p\u016fsob\u00ed jako adhezn\u00ed vrstva, kter\u00e1 zlep\u0161uje spojen\u00ed mezi m\u011bd\u011bn\u00fdm a k\u0159em\u00edkov\u00fdm substr\u00e1tem a zabra\u0148uje delaminaci b\u011bhem zpracov\u00e1n\u00ed a pou\u017e\u00edv\u00e1n\u00ed.<\/p>\n
Ano, napra\u0161ovanou m\u011b\u010f lze pou\u017e\u00edt jako z\u00e1kladn\u00ed vrstvu pro galvanick\u00e9 pokovov\u00e1n\u00ed, aby se dos\u00e1hlo siln\u011bj\u0161\u00edch kovov\u00fdch vrstev v z\u00e1vislosti na po\u017eadavc\u00edch aplikace.<\/p>\n
Ano. Na vy\u017e\u00e1d\u00e1n\u00ed jsou k dispozici mo\u017enosti jednostrann\u00e9ho nebo oboustrann\u00e9ho lakov\u00e1n\u00ed.<\/p>\n
Nej\u010dast\u011bji se pou\u017e\u00edv\u00e1 standardn\u00ed k\u0159em\u00edk, ale pro speci\u00e1ln\u00ed optick\u00e9 nebo chemick\u00e9 aplikace jsou k dispozici tak\u00e9 k\u0159emenn\u00e9 a sklen\u011bn\u00e9 substr\u00e1ty.<\/p>","protected":false},"excerpt":{"rendered":"