{"id":2360,"date":"2026-04-22T07:08:49","date_gmt":"2026-04-22T07:08:49","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2360"},"modified":"2026-04-22T07:13:29","modified_gmt":"2026-04-22T07:13:29","slug":"ai350ht-medium-beam-high-temperature-ion-implantation-system-for-6-8-inch-sic-and-silicon-wafer-processing","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/cs\/product\/ai350ht-medium-beam-high-temperature-ion-implantation-system-for-6-8-inch-sic-and-silicon-wafer-processing\/","title":{"rendered":"Ai350HT St\u0159edn\u00ed paprsek vysokoteplotn\u00ed iontov\u00e9 implantace pro zpracov\u00e1n\u00ed 6\/8 palcov\u00fdch SiC a k\u0159em\u00edkov\u00fdch desti\u010dek"},"content":{"rendered":"

\"Ai350HTVysokoteplotn\u00ed iontov\u00fd implanta\u010dn\u00ed syst\u00e9m Ai350HT (Medium Beam) je ur\u010den pro v\u00fdrobn\u00ed linky na 6palcov\u00e9 a 8palcov\u00e9 k\u0159em\u00edkov\u00e9 desti\u010dky a pro aplikace v procesu SiC. Jedn\u00e1 se o st\u0159edn\u011bproud\u00fd iontov\u00fd implant\u00e1tor vyvinut\u00fd pro vysokoenergetick\u00e9 a vysokoteplotn\u00ed procesy dopov\u00e1n\u00ed v pokro\u010dil\u00e9 v\u00fdrob\u011b polovodi\u010d\u016f.<\/p>\n

Syst\u00e9m podporuje energetick\u00fd rozsah od 5 keV do 350 keV, co\u017e umo\u017e\u0148uje procesy m\u011blk\u00e9 i hlubok\u00e9 implantace. Je vybaven vysokoteplotn\u00edm elektrostatick\u00fdm skl\u00ed\u010didlem schopn\u00fdm pracovat a\u017e do 500 \u00b0C, co\u017e umo\u017e\u0148uje lep\u0161\u00ed aktivaci dopantu a sn\u00ed\u017een\u00ed po\u0161kozen\u00ed m\u0159\u00ed\u017eky b\u011bhem implantace. V kombinaci se stabiln\u00edm v\u00fdkonem paprsku a vysoce p\u0159esn\u00fdm \u0159\u00edzen\u00edm je syst\u00e9m vhodn\u00fd jak pro v\u00fdrobu polovodi\u010d\u016f na b\u00e1zi k\u0159em\u00edku, tak pro v\u00fdrobu polovodi\u010d\u016f se \u0161irok\u00fdm p\u00e1smem.<\/p>\n

\n

Funkce<\/h2>\n

Mo\u017enost implantace p\u0159i vysok\u00fdch teplot\u00e1ch<\/h3>\n

Je vybaven vysokoteplotn\u00edm elektrostatick\u00fdm skl\u00ed\u010didlem s teplotou a\u017e 500 \u00b0C, kter\u00e9 umo\u017e\u0148uje lep\u0161\u00ed \u00fa\u010dinnost implantace a aktivaci dopant\u016f pro pokro\u010dil\u00e9 procesy.<\/p>\n

\u0160irok\u00fd energetick\u00fd rozsah<\/h3>\n

Energetick\u00fd rozsah 5-350 keV podporuje flexibiln\u00ed po\u017eadavky na implantaci od tvorby m\u011blk\u00fdch spoj\u016f a\u017e po hlubok\u00e9 implanta\u010dn\u00ed procesy.<\/p>\n

Vysoce p\u0159esn\u00e9 \u0159\u00edzen\u00ed paprsku<\/h3>\n

Poskytuje p\u0159esn\u00fd implanta\u010dn\u00ed v\u00fdkon s \u00fahlovou p\u0159esnost\u00ed \u2264 0,2\u00b0, rovnob\u011b\u017enost\u00ed paprsku \u2264 0,2\u00b0, rovnom\u011brnost\u00ed \u2264 0,5% a opakovatelnost\u00ed \u2264 0,5%.<\/p>\n

Stabiln\u00ed v\u00fdkon paprsku<\/h3>\n

Stabilita paprsku je kontrolov\u00e1na v rozmez\u00ed 10% za hodinu, co\u017e zaji\u0161\u0165uje st\u00e1lou kvalitu procesu b\u011bhem dlouh\u00fdch v\u00fdrobn\u00edch cykl\u016f.<\/p>\n

Zdroj iont\u016f s dlouhou \u017eivotnost\u00ed<\/h3>\n

Je vybaven zdrojem kovov\u00fdch Al iont\u016f s \u017eivotnost\u00ed \u2265 150 hodin, co\u017e sni\u017euje \u010detnost \u00fadr\u017eby a zlep\u0161uje dobu provozuschopnosti.<\/p>\n

Vysok\u00e1 propustnost<\/h3>\n

Podporuje v\u00fdkon \u2265 200 desti\u010dek za hodinu, co\u017e je vhodn\u00e9 pro prost\u0159ed\u00ed v\u00fdroby polovodi\u010d\u016f.<\/p>\n

Pokro\u010dil\u00e1 kompatibilita proces\u016f<\/h3>\n

Kompatibiln\u00ed s procesy SiC a b\u011b\u017enou v\u00fdrobou polovodi\u010d\u016f na b\u00e1zi k\u0159em\u00edku.<\/p>\n

\"\"\"\"<\/p>\n

\n

Kl\u00ed\u010dov\u00e9 specifikace<\/h2>\n

Parametry procesu<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
Polo\u017eka<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Velikost oplatky<\/td>\n6-8 palc\u016f<\/td>\n<\/tr>\n
Energetick\u00fd rozsah<\/td>\n5-350 keV<\/td>\n<\/tr>\n
Implantovan\u00e9 prvky<\/td>\nC, Al, B, P, N, He, Ar<\/td>\n<\/tr>\n
Rozsah d\u00e1vek<\/td>\n1E11-1E17 iont\u016f\/cm\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

V\u00fdkonnost paprsku<\/h3>\n
\n
\n\n\n\n\n\n\n
Polo\u017eka<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Stabilita nosn\u00edku<\/td>\n\u2264 10% \/ hodinu (\u22641 p\u0159eru\u0161en\u00ed paprsku nebo oblouk za hodinu)<\/td>\n<\/tr>\n
Rovnob\u011b\u017enost paprsk\u016f<\/td>\n\u2264 0.2\u00b0<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

P\u0159esnost implantace<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
Polo\u017eka<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Rozsah \u00fahlu implant\u00e1tu<\/td>\n0\u00b0-45\u00b0<\/td>\n<\/tr>\n
\u00dahlov\u00e1 p\u0159esnost<\/td>\n\u2264 0.2\u00b0<\/td>\n<\/tr>\n
Rovnom\u011brnost (1\u03c3)<\/td>\n\u2264 0,5% (P+, 1E14, 100 keV)<\/td>\n<\/tr>\n
Opakovatelnost (1\u03c3)<\/td>\n\u2264 0,5%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

V\u00fdkon syst\u00e9mu<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n\n\n
Polo\u017eka<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Propustnost<\/td>\n\u2265 200 desti\u010dek za hodinu<\/td>\n<\/tr>\n
Maxim\u00e1ln\u00ed teplota skl\u00ed\u010didla<\/td>\n500\u00b0C<\/td>\n<\/tr>\n
Velikost za\u0159\u00edzen\u00ed<\/td>\n6270 \u00d7 3500 \u00d7 3000 mm<\/td>\n<\/tr>\n
\u00darove\u0148 vakua<\/td>\n5E-7 Torr<\/td>\n<\/tr>\n
\u00danik rentgenov\u00e9ho z\u00e1\u0159en\u00ed<\/td>\n\u2264 0,3 \u03bcSv\/h<\/td>\n<\/tr>\n
Re\u017eim skenov\u00e1n\u00ed<\/td>\nHorizont\u00e1ln\u00ed elektrostatick\u00e9 skenov\u00e1n\u00ed + vertik\u00e1ln\u00ed mechanick\u00e9 skenov\u00e1n\u00ed<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\n

Aplika\u010dn\u00ed pole<\/h2>\n

V\u00fdroba polovodi\u010d\u016f SiC<\/h3>\n

Pou\u017e\u00edv\u00e1 se p\u0159i v\u00fdrob\u011b za\u0159\u00edzen\u00ed z karbidu k\u0159em\u00edku vy\u017eaduj\u00edc\u00edch vysokoteplotn\u00ed procesy iontov\u00e9 implantace.<\/p>\n

Zpracov\u00e1n\u00ed polovodi\u010d\u016f na b\u00e1zi k\u0159em\u00edku<\/h3>\n

Pou\u017eiteln\u00e9 pro v\u00fdrobu CMOS a integrovan\u00fdch obvod\u016f na 6palcov\u00fdch a 8palcov\u00fdch desti\u010dk\u00e1ch.<\/p>\n

Vysokoteplotn\u00ed implanta\u010dn\u00ed procesy<\/h3>\n

Vhodn\u00e9 pro procesy vy\u017eaduj\u00edc\u00ed zv\u00fd\u0161enou teplotu pro sn\u00ed\u017een\u00ed po\u0161kozen\u00ed krystal\u016f a lep\u0161\u00ed aktivaci dopantu.<\/p>\n

V\u00fdroba nap\u00e1jec\u00edch za\u0159\u00edzen\u00ed<\/h3>\n

Pou\u017e\u00edv\u00e1 se ve v\u00fdkonov\u00fdch polovodi\u010dov\u00fdch za\u0159\u00edzen\u00edch vy\u017eaduj\u00edc\u00edch hlubokou implantaci a vysokoenergetick\u00e9 procesy.<\/p>\n

Pokro\u010dil\u00e9 materi\u00e1lov\u00e9 in\u017een\u00fdrstv\u00ed<\/h3>\n

Podporuje iontovou implantaci v prost\u0159ed\u00ed v\u00fdvoje pokro\u010dil\u00fdch polovodi\u010dov\u00fdch materi\u00e1l\u016f a proces\u016f.<\/p>\n

\n

\u010casto kladen\u00e9 ot\u00e1zky<\/h2>\n

1. Jak\u00e9 velikosti desti\u010dek podporuje Ai350HT<\/h3>\n

Syst\u00e9m podporuje 6palcov\u00e9 a 8palcov\u00e9 desti\u010dky a je vhodn\u00fd pro v\u00fdrobn\u00ed linky na b\u00e1zi k\u0159em\u00edku i SiC polovodi\u010d\u016f.<\/p>\n

2. Jak\u00e1 je maxim\u00e1ln\u00ed teplota podporovan\u00e1 b\u011bhem implantace<\/h3>\n

Syst\u00e9m podporuje vysokoteplotn\u00ed implantaci a\u017e do 500 \u00b0C pomoc\u00ed vyh\u0159\u00edvan\u00e9ho elektrostatick\u00e9ho skl\u00ed\u010didla s mechanick\u00fdm up\u00edn\u00e1n\u00edm.<\/p>\n

3. Jak\u00e9 jsou hlavn\u00ed v\u00fdhody tohoto syst\u00e9mu pro procesy SiC?<\/h3>\n

Syst\u00e9m kombinuje schopnost pracovat p\u0159i vysok\u00fdch teplot\u00e1ch, stabiln\u00ed v\u00fdkon paprsku a kompatibilitu s procesy SiC, tak\u017ee je vhodn\u00fd pro polovodi\u010dov\u00e9 aplikace se \u0161irok\u00fdm p\u00e1smem.<\/p>","protected":false},"excerpt":{"rendered":"

Vysokoteplotn\u00ed iontov\u00fd implanta\u010dn\u00ed syst\u00e9m Ai350HT (Medium Beam) je ur\u010den pro v\u00fdrobn\u00ed linky na 6palcov\u00e9 a 8palcov\u00e9 k\u0159em\u00edkov\u00e9 desti\u010dky a pro aplikace v procesu SiC. Jedn\u00e1 se o st\u0159edn\u011bproud\u00fd iontov\u00fd implant\u00e1tor vyvinut\u00fd pro vysokoenergetick\u00e9 a vysokoteplotn\u00ed procesy dopov\u00e1n\u00ed v pokro\u010dil\u00e9 v\u00fdrob\u011b polovodi\u010d\u016f.<\/p>","protected":false},"featured_media":2361,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}}},"product_brand":[],"product_cat":[1177],"product_tag":[1189,1190,1194,1178,1181,1186,1199,1196,1195,1198],"class_list":{"0":"post-2360","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-ion-implantation-equipment","7":"product_tag-6-inch-wafer-equipment","8":"product_tag-8-inch-wafer-processing","9":"product_tag-high-temperature-ion-implantation","10":"product_tag-ion-implantation-system","11":"product_tag-lsi-manufacturing-equipment","12":"product_tag-medium-beam-ion-implanter","13":"product_tag-power-device-fabrication-equipment","14":"product_tag-semiconductor-doping-machine","15":"product_tag-sic-implantation-equipment","16":"product_tag-wide-bandgap-semiconductor-equipment","17":"desktop-align-left","18":"tablet-align-left","19":"mobile-align-left","20":"ast-product-gallery-layout-horizontal-slider","21":"ast-product-gallery-with-no-image","22":"ast-product-tabs-layout-horizontal","24":"first","25":"instock","26":"shipping-taxable","27":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product\/2360","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/comments?post=2360"}],"version-history":[{"count":4,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product\/2360\/revisions"}],"predecessor-version":[{"id":2367,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product\/2360\/revisions\/2367"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/media\/2361"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/media?parent=2360"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product_brand?post=2360"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product_cat?post=2360"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product_tag?post=2360"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}