{"id":2354,"date":"2026-04-22T06:34:59","date_gmt":"2026-04-22T06:34:59","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2354"},"modified":"2026-04-22T07:16:34","modified_gmt":"2026-04-22T07:16:34","slug":"ai300-medium-beam-high-temperature-ion-implantation-system-for-12-inch-wafer-processing","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/cs\/product\/ai300-medium-beam-high-temperature-ion-implantation-system-for-12-inch-wafer-processing\/","title":{"rendered":"Vysokoteplotn\u00ed iontov\u00fd implanta\u010dn\u00ed syst\u00e9m Ai300 (st\u0159edn\u00ed paprsek) pro zpracov\u00e1n\u00ed 12palcov\u00fdch desti\u010dek"},"content":{"rendered":"

\"Vysokoteplotn\u00edVysokoteplotn\u00ed iontov\u00fd implanta\u010dn\u00ed syst\u00e9m Ai300 (Medium Beam) je ur\u010den pro v\u00fdrobn\u00ed linky na 12palcov\u00e9 k\u0159em\u00edkov\u00e9 pl\u00e1tky polovodi\u010d\u016f. Jedn\u00e1 se o st\u0159edn\u011bproud\u00fd iontov\u00fd implant\u00e1tor vyvinut\u00fd pro pokro\u010dil\u00e9 procesy dopov\u00e1n\u00ed v polovodi\u010dov\u00fdch aplikac\u00edch na b\u00e1zi k\u0159em\u00edku i s \u0161irok\u00fdm p\u00e1smem, v\u010detn\u011b technologick\u00fdch linek pro SiC.<\/p>\n

Syst\u00e9m podporuje energetick\u00fd rozsah od 5 keV do 300 keV, co\u017e umo\u017e\u0148uje flexibiln\u00ed implantaci od tvorby m\u011blk\u00fdch spoj\u016f a\u017e po aplikace s hlubok\u00fdm dopov\u00e1n\u00edm. Je vybaven vysokoteplotn\u00edm vyh\u0159\u00edvan\u00fdm desti\u010dkov\u00fdm stolkem s maxim\u00e1ln\u00ed teplotou a\u017e 400 \u00b0C, co\u017e umo\u017e\u0148uje lep\u0161\u00ed aktivaci dopantu a sn\u00ed\u017een\u00ed po\u0161kozen\u00ed m\u0159\u00ed\u017eky b\u011bhem implantace.<\/p>\n

D\u00edky stabiln\u00edmu v\u00fdkonu paprsku, vysok\u00e9 p\u0159esnosti \u0159\u00edzen\u00ed a kompatibilit\u011b s rozs\u00e1hl\u00fdmi procesy v\u00fdroby integrovan\u00fdch obvod\u016f je syst\u00e9m Ai300 vhodn\u00fd pro pokro\u010dil\u00e9 prost\u0159ed\u00ed v\u00fdroby polovodi\u010d\u016f.<\/p>\n

\n

Funkce<\/h2>\n

Schopnost implantace p\u0159i vysok\u00fdch teplot\u00e1ch<\/h3>\n

Je vybaven vyh\u0159\u00edvan\u00fdm stup\u0148em pro desti\u010dky s teplotou a\u017e 400 \u00b0C, co\u017e zlep\u0161uje kvalitu implantace a \u00fa\u010dinnost aktivace dopantu.<\/p>\n

\u0160irok\u00fd energetick\u00fd rozsah<\/h3>\n

Energetick\u00fd rozsah 5-300 keV podporuje procesy m\u011blk\u00e9 i hlubok\u00e9 implantace pro pokro\u010dil\u00e9 struktury za\u0159\u00edzen\u00ed.<\/p>\n

Vysoce p\u0159esn\u00e9 \u0159\u00edzen\u00ed paprsku<\/h3>\n

Poskytuje vysoce p\u0159esnou implantaci s \u00fahlovou p\u0159esnost\u00ed \u2264 0,1\u00b0, rovnob\u011b\u017enost\u00ed paprsku \u2264 0,1\u00b0, rovnom\u011brnost\u00ed \u2264 0,5% a opakovatelnost\u00ed \u2264 0,5%.<\/p>\n

Vysok\u00fd v\u00fdkon<\/h3>\n

Podporuje v\u00fdkon a\u017e \u2265 500 desti\u010dek za hodinu, co\u017e je vhodn\u00e9 pro velkos\u00e9riovou v\u00fdrobu polovodi\u010d\u016f.<\/p>\n

Schopnost pokro\u010dil\u00fdch iontov\u00fdch zdroj\u016f<\/h3>\n

Podporuje v\u00edce implantovan\u00fdch prvk\u016f, v\u010detn\u011b C, B, P, N, He a Ar, a spl\u0148uje tak r\u016fzn\u00e9 po\u017eadavky na polovodi\u010dov\u00e9 procesy.<\/p>\n

Kompatibilita proces\u016f LSI<\/h3>\n

Pln\u011b kompatibiln\u00ed s rozs\u00e1hl\u00fdmi v\u00fdrobn\u00edmi procesy integrovan\u00fdch obvod\u016f a pokro\u010dilou v\u00fdrobou za\u0159\u00edzen\u00ed.<\/p>\n

\"\" \"\"<\/p>\n

\n

Kl\u00ed\u010dov\u00e9 specifikace<\/h2>\n

Parametry procesu<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
Polo\u017eka<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Velikost oplatky<\/td>\n12 palc\u016f<\/td>\n<\/tr>\n
Energetick\u00fd rozsah<\/td>\n5-300 keV<\/td>\n<\/tr>\n
Implantovan\u00e9 prvky<\/td>\nC, B, P, N, He, Ar<\/td>\n<\/tr>\n
Rozsah d\u00e1vek<\/td>\n1E11-1E16 iont\u016f\/cm\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

V\u00fdkonnost paprsku<\/h3>\n
\n
\n\n\n\n\n\n\n
Polo\u017eka<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Stabilita nosn\u00edku<\/td>\n\u2264 10% \/ hodinu (\u22641 p\u0159eru\u0161en\u00ed paprsku nebo oblouk za hodinu)<\/td>\n<\/tr>\n
Rovnob\u011b\u017enost paprsk\u016f<\/td>\n\u2264 0.1\u00b0<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

P\u0159esnost implantace<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
Polo\u017eka<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Rozsah \u00fahlu implant\u00e1tu<\/td>\n0\u00b0-45\u00b0<\/td>\n<\/tr>\n
\u00dahlov\u00e1 p\u0159esnost<\/td>\n\u2264 0.1\u00b0<\/td>\n<\/tr>\n
Rovnom\u011brnost (1\u03c3)<\/td>\n\u2264 0,5% (P+, 1E14, 100 keV)<\/td>\n<\/tr>\n
Opakovatelnost (1\u03c3)<\/td>\n\u2264 0,5%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

V\u00fdkon syst\u00e9mu<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n\n\n
Polo\u017eka<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Propustnost<\/td>\n\u2265 500 desti\u010dek za hodinu<\/td>\n<\/tr>\n
Maxim\u00e1ln\u00ed teplota implant\u00e1tu<\/td>\n400\u00b0C<\/td>\n<\/tr>\n
Velikost za\u0159\u00edzen\u00ed<\/td>\n6400 \u00d7 3640 \u00d7 3100 mm<\/td>\n<\/tr>\n
\u00darove\u0148 vakua<\/td>\n5E-7 Torr<\/td>\n<\/tr>\n
\u00danik rentgenov\u00e9ho z\u00e1\u0159en\u00ed<\/td>\n\u2264 0,3 \u03bcSv\/h<\/td>\n<\/tr>\n
Re\u017eim skenov\u00e1n\u00ed<\/td>\nHorizont\u00e1ln\u00ed elektrostatick\u00e9 skenov\u00e1n\u00ed + vertik\u00e1ln\u00ed mechanick\u00e9 skenov\u00e1n\u00ed<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\n

Aplika\u010dn\u00ed pole<\/h2>\n

Zpracov\u00e1n\u00ed polovodi\u010d\u016f SiC<\/h3>\n

Pou\u017e\u00edv\u00e1 se p\u0159i v\u00fdrob\u011b za\u0159\u00edzen\u00ed z karbidu k\u0159em\u00edku a podporuje vysokoteplotn\u00ed implanta\u010dn\u00ed procesy pot\u0159ebn\u00e9 pro materi\u00e1ly se \u0161irok\u00fdm p\u00e1smov\u00fdm rozp\u011bt\u00edm.<\/p>\n

V\u00fdroba polovodi\u010d\u016f na b\u00e1zi k\u0159em\u00edku<\/h3>\n

Pou\u017eiteln\u00e9 pro v\u00fdrobn\u00ed linky na 12palcov\u00e9 k\u0159em\u00edkov\u00e9 pl\u00e1tky pro v\u00fdrobu CMOS a pokro\u010dil\u00fdch integrovan\u00fdch obvod\u016f.<\/p>\n

Vysokoteplotn\u00ed implanta\u010dn\u00ed procesy<\/h3>\n

Podporuje implanta\u010dn\u00ed procesy vy\u017eaduj\u00edc\u00ed zv\u00fd\u0161enou teplotu desti\u010dek, aby se sn\u00ed\u017eilo mno\u017estv\u00ed defekt\u016f a zlep\u0161ila aktivace dopant\u016f.<\/p>\n

V\u00fdroba nap\u00e1jec\u00edch za\u0159\u00edzen\u00ed<\/h3>\n

Vhodn\u00e9 pro v\u00fdkonov\u00e9 polovodi\u010dov\u00e9 sou\u010d\u00e1stky, kde se vy\u017eaduje p\u0159esn\u00e9 dopov\u00e1n\u00ed a implantace s vysokou energi\u00ed.<\/p>\n

Pokro\u010dil\u00e1 v\u00fdroba integrovan\u00fdch obvod\u016f<\/h3>\n

Podporuje integraci proces\u016f LSI s po\u017eadavky na vysokou p\u0159esnost a vysokou propustnost.<\/p>\n

\n

\u010casto kladen\u00e9 ot\u00e1zky<\/h2>\n

1. Jakou velikost desti\u010dek syst\u00e9m Ai300 podporuje?<\/h3>\n

Syst\u00e9m je ur\u010den pro 12palcov\u00e9 k\u0159em\u00edkov\u00e9 desti\u010dky a je vhodn\u00fd pro modern\u00ed linky na v\u00fdrobu polovodi\u010d\u016f.<\/p>\n

2. Jak\u00e1 je hlavn\u00ed v\u00fdhoda schopnosti implantace p\u0159i vysok\u00fdch teplot\u00e1ch?<\/h3>\n

Syst\u00e9m podporuje implantaci a\u017e do 400 \u00b0C, co\u017e pom\u00e1h\u00e1 sn\u00ed\u017eit po\u0161kozen\u00ed m\u0159\u00ed\u017eky, zlep\u0161it aktivaci dopant\u016f a zv\u00fd\u0161it celkov\u00fd v\u00fdkon za\u0159\u00edzen\u00ed.<\/p>\n

3. Jakou \u00farove\u0148 p\u0159esnosti a efektivity v\u00fdroby syst\u00e9m poskytuje?<\/h3>\n

Syst\u00e9m zaji\u0161\u0165uje \u00fahlovou p\u0159esnost v rozmez\u00ed 0,1 stupn\u011b, rovnob\u011b\u017enost paprsku v rozmez\u00ed 0,1 stupn\u011b a rovnom\u011brnost a opakovatelnost v rozmez\u00ed 0,5 procenta, a to s v\u00fdkonem a\u017e 500 desti\u010dek za hodinu.<\/p>","protected":false},"excerpt":{"rendered":"

Vysokoteplotn\u00ed iontov\u00fd implanta\u010dn\u00ed syst\u00e9m Ai300 (Medium Beam) je ur\u010den pro v\u00fdrobn\u00ed linky na 12palcov\u00e9 k\u0159em\u00edkov\u00e9 pl\u00e1tky polovodi\u010d\u016f. Jedn\u00e1 se o st\u0159edn\u011bproud\u00fd iontov\u00fd implant\u00e1tor vyvinut\u00fd pro pokro\u010dil\u00e9 procesy dopov\u00e1n\u00ed v polovodi\u010dov\u00fdch aplikac\u00edch na b\u00e1zi k\u0159em\u00edku i s \u0161irok\u00fdm p\u00e1smem, v\u010detn\u011b technologick\u00fdch linek pro SiC.<\/p>","protected":false},"featured_media":2357,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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