{"id":2346,"date":"2026-04-22T05:56:29","date_gmt":"2026-04-22T05:56:29","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2346"},"modified":"2026-04-22T07:25:08","modified_gmt":"2026-04-22T07:25:08","slug":"ai250-medium-beam-room-temperature-ion-implantation-system-for-6-8-inch-silicon-wafer-processing","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/cs\/product\/ai250-medium-beam-room-temperature-ion-implantation-system-for-6-8-inch-silicon-wafer-processing\/","title":{"rendered":"Syst\u00e9m Ai250 (st\u0159edn\u00ed paprsek) pro iontovou implantaci p\u0159i pokojov\u00e9 teplot\u011b pro zpracov\u00e1n\u00ed 6-8palcov\u00fdch k\u0159em\u00edkov\u00fdch desti\u010dek"},"content":{"rendered":"

\"\"Iontov\u00fd implanta\u010dn\u00ed syst\u00e9m Ai250 (Medium Beam) je ur\u010den pro v\u00fdrobn\u00ed linky na 6 a 8palcov\u00e9 k\u0159em\u00edkov\u00e9 pl\u00e1tky polovodi\u010d\u016f. Jedn\u00e1 se o st\u0159edn\u011bproud\u00fd iontov\u00fd implant\u00e1tor pou\u017e\u00edvan\u00fd v pokro\u010dil\u00fdch procesech v\u00fdroby integrovan\u00fdch obvod\u016f, kter\u00fd poskytuje stabiln\u00ed v\u00fdkon svazku, vysokou p\u0159esnost implantace a spolehlivou kontrolu d\u00e1vky.<\/p>\n

Syst\u00e9m podporuje energetick\u00fd rozsah od 5 keV do 250 keV, co\u017e umo\u017e\u0148uje aplikace m\u011blk\u00e9 i hlubok\u00e9 iontov\u00e9 implantace. Je vhodn\u00fd pro \u0161irokou \u0161k\u00e1lu proces\u016f dopov\u00e1n\u00ed polovodi\u010d\u016f a je pln\u011b kompatibiln\u00ed s po\u017eadavky na v\u00fdrobu LSI.<\/p>\n

\n

Funkce<\/h2>\n

Stabiln\u00ed v\u00fdkon st\u0159edn\u00edho paprsku<\/h3>\n

Zaji\u0161\u0165uje stabiln\u00ed v\u00fdstup iontov\u00e9ho svazku b\u011bhem dlouh\u00fdch v\u00fdrobn\u00edch cykl\u016f, zlep\u0161uje konzistenci procesu a sni\u017euje variabilitu.<\/p>\n

Schopnost \u0161irok\u00e9ho energetick\u00e9ho rozsahu<\/h3>\n

Energetick\u00fd rozsah 5-250 keV podporuje flexibiln\u00ed po\u017eadavky na implantaci pro r\u016fzn\u00e9 struktury za\u0159\u00edzen\u00ed a procesn\u00ed uzly.<\/p>\n

Vysoce p\u0159esn\u00e9 \u0159\u00edzen\u00ed proces\u016f<\/h3>\n

Poskytuje vysokou p\u0159esnost implantace s \u00fahlovou p\u0159esnost\u00ed \u2264 0,2\u00b0, rovnob\u011b\u017enost\u00ed paprsku \u2264 0,2\u00b0, rovnom\u011brnost\u00ed \u2264 0,5% a opakovatelnost\u00ed \u2264 0,5%.<\/p>\n

Vysok\u00e1 propustnost<\/h3>\n

Podporuje \u2265 200 wafer\u016f za hodinu, vhodn\u00e9 pro st\u0159edn\u011b velkou a\u017e velkoobjemovou v\u00fdrobu polovodi\u010d\u016f.<\/p>\n

Funkce vzorov\u00e9ho implant\u00e1tu<\/h3>\n

Podporuje v\u00edcez\u00f3novou a kvadrantovou implantaci na jedin\u00e9m pl\u00e1tku, \u010d\u00edm\u017e zvy\u0161uje flexibilitu procesu a sni\u017euje n\u00e1klady na v\u00fdvoj.<\/p>\n

Kompatibilita proces\u016f LSI<\/h3>\n

Pln\u011b kompatibiln\u00ed s v\u00fdrobn\u00edmi procesy polovodi\u010d\u016f LSI.<\/p>\n

\"\"<\/p>\n

\n

Kl\u00ed\u010dov\u00e9 specifikace<\/h2>\n

Parametry procesu<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
Polo\u017eka<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Velikost oplatky<\/td>\n6-8palcov\u00e9 k\u0159em\u00edkov\u00e9 desti\u010dky<\/td>\n<\/tr>\n
Energetick\u00fd rozsah<\/td>\n5-250 keV<\/td>\n<\/tr>\n
Implantovan\u00e9 prvky<\/td>\nB+, P+, As+, Ar+, N+, H+<\/td>\n<\/tr>\n
Rozsah d\u00e1vek<\/td>\n5E11-1E16 iont\u016f\/cm\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

V\u00fdkonnost paprsku<\/h3>\n
\n
\n\n\n\n\n\n\n\n
Polo\u017eka<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Maxim\u00e1ln\u00ed proud paprsku<\/td>\nAr+ \u2265 1300 \u03bcA @ \u2265220 keV
\nB+ \u2265 1000 \u03bcA @ \u2265220 keV
\nP+ \u2265 1300 \u03bcA @ \u2265220 keV
\nN+ \u2265 1000 \u03bcA @ \u2265220 keV<\/td>\n<\/tr>\n
Stabilita nosn\u00edku<\/td>\n\u2264 15% \/ hodinu (p\u0159eru\u0161en\u00ed paprsku a oblouk \u2264 1kr\u00e1t za hodinu)<\/td>\n<\/tr>\n
Rovnob\u011b\u017enost paprsk\u016f<\/td>\n\u2264 0.2\u00b0<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

P\u0159esnost implantace<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n
Polo\u017eka<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Rozsah \u00fahlu implant\u00e1tu<\/td>\n0\u00b0-45\u00b0<\/td>\n<\/tr>\n
\u00dahlov\u00e1 p\u0159esnost<\/td>\n\u2264 0.2\u00b0<\/td>\n<\/tr>\n
Rovnom\u011brnost (1\u03c3)<\/td>\n\u2264 0,5% (B+, 2E14, 150 keV)<\/td>\n<\/tr>\n
Opakovatelnost (1\u03c3)<\/td>\n\u2264 0,5%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

V\u00fdkon syst\u00e9mu<\/h3>\n
\n
\n\n\n\n\n\n\n\n\n\n
Polo\u017eka<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Propustnost<\/td>\n\u2265 200 desti\u010dek za hodinu<\/td>\n<\/tr>\n
\u00darove\u0148 vakua<\/td>\n< 5E-7 Torr<\/td>\n<\/tr>\n
\u00danik rentgenov\u00e9ho z\u00e1\u0159en\u00ed<\/td>\n\u2264 0,6 \u03bcSv\/h<\/td>\n<\/tr>\n
Re\u017eim skenov\u00e1n\u00ed<\/td>\nHorizont\u00e1ln\u00ed elektrostatick\u00e9 skenov\u00e1n\u00ed + vertik\u00e1ln\u00ed mechanick\u00e9 skenov\u00e1n\u00ed<\/td>\n<\/tr>\n
Velikost za\u0159\u00edzen\u00ed<\/td>\n5600 \u00d7 3300 \u00d7 2600 mm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\n

Aplika\u010dn\u00ed pole<\/h2>\n

V\u00fdroba polovodi\u010dov\u00fdch za\u0159\u00edzen\u00ed<\/h3>\n

Pou\u017e\u00edv\u00e1 se p\u0159i v\u00fdrob\u011b logick\u00fdch za\u0159\u00edzen\u00ed CMOS a zaji\u0161\u0165uje p\u0159esnou implantaci dopant\u016f pro tvorbu tranzistor\u016f.<\/p>\n

V\u00fdroba integrovan\u00fdch obvod\u016f<\/h3>\n

Pou\u017e\u00edv\u00e1 se v procesech v\u00fdroby LSI a pokro\u010dil\u00fdch integrovan\u00fdch obvod\u016f vy\u017eaduj\u00edc\u00edch vysoce p\u0159esnou kontrolu dopov\u00e1n\u00ed.<\/p>\n

Formace m\u011blk\u00e9ho a hlubok\u00e9ho spoje<\/h3>\n

Podporuje implanta\u010dn\u00ed procesy pro in\u017een\u00fdrstv\u00ed zdroje\/odtoku a kontrolu hloubky p\u0159echodu.<\/p>\n

Dopantov\u00e9 in\u017een\u00fdrstv\u00ed<\/h3>\n

Pou\u017e\u00edv\u00e1 se ke kontrole elektrick\u00fdch vlastnost\u00ed k\u0159em\u00edkov\u00fdch desti\u010dek pomoc\u00ed p\u0159esn\u00e9 iontov\u00e9 implantace.<\/p>\n

V\u00fdvoj proces\u016f a v\u00fdzkum a v\u00fdvoj<\/h3>\n

Vhodn\u00e9 pro v\u00fdvoj polovodi\u010dov\u00fdch proces\u016f, pilotn\u00ed v\u00fdrobu a v\u00fdrobu experiment\u00e1ln\u00edch za\u0159\u00edzen\u00ed.<\/p>\n

\n

\u010casto kladen\u00e9 ot\u00e1zky<\/h2>\n

1. Jak\u00e9 velikosti desti\u010dek podporuje Ai250<\/h3>\n

Syst\u00e9m podporuje 6palcov\u00e9 a 8palcov\u00e9 k\u0159em\u00edkov\u00e9 desti\u010dky a je vhodn\u00fd pro b\u011b\u017en\u00e9 v\u00fdrobn\u00ed linky polovodi\u010d\u016f.<\/p>\n

2. Jak\u00fd je energetick\u00fd rozsah syst\u00e9mu<\/h3>\n

Rozsah energi\u00ed je 5 keV a\u017e 250 keV, co\u017e podporuje procesy m\u011blk\u00e9 i hlubok\u00e9 implantace pro v\u00fdrobu polovodi\u010dov\u00fdch sou\u010d\u00e1stek.<\/p>\n

3. Jakou \u00farove\u0148 p\u0159esnosti procesu syst\u00e9m poskytuje<\/h3>\n

Syst\u00e9m zaji\u0161\u0165uje \u00fahlovou p\u0159esnost v rozmez\u00ed 0,2\u00b0, rovnob\u011b\u017enost paprsku v rozmez\u00ed 0,2\u00b0 a rovnom\u011brnost a opakovatelnost v rozmez\u00ed 0,5%, co\u017e zaru\u010duje stabiln\u00ed a vysoce produktivn\u00ed v\u00fdrobn\u00ed v\u00fdkon.<\/p>","protected":false},"excerpt":{"rendered":"

Iontov\u00fd implanta\u010dn\u00ed syst\u00e9m Ai250 (Medium Beam) je ur\u010den pro v\u00fdrobn\u00ed linky na 6 a 8palcov\u00e9 k\u0159em\u00edkov\u00e9 pl\u00e1tky polovodi\u010d\u016f. Jedn\u00e1 se o st\u0159edn\u011bproud\u00fd iontov\u00fd implant\u00e1tor pou\u017e\u00edvan\u00fd v pokro\u010dil\u00fdch procesech v\u00fdroby integrovan\u00fdch obvod\u016f, kter\u00fd poskytuje stabiln\u00ed v\u00fdkon svazku, vysokou p\u0159esnost implantace a spolehlivou kontrolu d\u00e1vky.<\/p>","protected":false},"featured_media":2347,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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