{"id":2342,"date":"2026-04-22T05:35:46","date_gmt":"2026-04-22T05:35:46","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&#038;p=2342"},"modified":"2026-04-22T07:27:32","modified_gmt":"2026-04-22T07:27:32","slug":"high-efficiency-ai80hchigh-beam-ion-implantation-equipment-for-advanced-silicon-wafer-doping","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/cs\/product\/high-efficiency-ai80hchigh-beam-ion-implantation-equipment-for-advanced-silicon-wafer-doping\/","title":{"rendered":"Vysoce \u00fa\u010dinn\u00e9 za\u0159\u00edzen\u00ed Ai80HC (High Beam) pro iontovou implantaci pro pokro\u010dil\u00e9 dopov\u00e1n\u00ed k\u0159em\u00edkov\u00fdch desti\u010dek"},"content":{"rendered":"<p data-start=\"153\" data-end=\"528\"><img fetchpriority=\"high\" decoding=\"async\" class=\"alignright wp-image-2343 size-medium\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-300x300.png\" alt=\"Vysoce \u00fa\u010dinn\u00e9 za\u0159\u00edzen\u00ed Ai80HC (High Beam) pro iontovou implantaci pro pokro\u010dil\u00e9 dopov\u00e1n\u00ed k\u0159em\u00edkov\u00fdch desti\u010dek\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC-100x100.png 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI80HC.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Za\u0159\u00edzen\u00ed Ai80HC (High Beam) pro iontovou implantaci je vysokoproud\u00fd iontov\u00fd implant\u00e1tor speci\u00e1ln\u011b navr\u017een\u00fd pro v\u00fdrobn\u00ed linky na 12palcov\u00e9 k\u0159em\u00edkov\u00e9 pl\u00e1tky polovodi\u010d\u016f. Je zkonstruov\u00e1no pro pokro\u010dil\u00e9 p\u0159esn\u00e9 dopov\u00e1n\u00ed v modern\u00ed v\u00fdrob\u011b integrovan\u00fdch obvod\u016f a poskytuje stabiln\u00ed v\u00fdkon paprsku, vysokou opakovatelnost procesu a vynikaj\u00edc\u00ed p\u0159esnost kontroly d\u00e1vky.<\/p>\n<p data-start=\"530\" data-end=\"891\">Syst\u00e9m pracuje v \u0161irok\u00e9m rozsahu energi\u00ed od 0,5 keV do 80 keV, co\u017e umo\u017e\u0148uje flexibiln\u00ed podm\u00ednky implantace pro in\u017een\u00fdrstv\u00ed m\u011blk\u00fdch i st\u0159edn\u011b hlubok\u00fdch spoj\u016f. Podporuje v\u00edce druh\u016f implantac\u00ed v\u010detn\u011b \u00b9\u00b9B\u207a, \u2074\u2079BF\u2082\u207a, \u00b3\u00b9P\u207a, \u2077\u2075As\u207a, \u00b9\u2074N\u207a a \u00b9H\u207a, tak\u017ee je vhodn\u00fd pro \u0161irokou \u0161k\u00e1lu proces\u016f v\u00fdroby CMOS a pokro\u010dil\u00fdch logick\u00fdch za\u0159\u00edzen\u00ed.<\/p>\n<p data-start=\"893\" data-end=\"1243\">D\u00edky rozsahu \u00fahlu implantace od 0\u00b0 do 45\u00b0 a vysok\u00e9 p\u0159esnosti \u00fahlu \u2264 0,1\u00b0 zaji\u0161\u0165uje syst\u00e9m p\u0159esnou kontrolu distribuce dopantu a konstrukci profilu spoje. V kombinaci s rovnob\u011b\u017enost\u00ed paprsku \u2264 0,3\u00b0 a rovnom\u011brnost\u00ed \u2264 1% (1\u03c3) poskytuje Ai80HC (High Beam) konzistentn\u00ed stabilitu procesu mezi jednotliv\u00fdmi desti\u010dkami a uvnit\u0159 desti\u010dky.<\/p>\n<p data-start=\"1245\" data-end=\"1496\">Syst\u00e9m je navr\u017een pro vysoce efektivn\u00ed v\u00fdrobn\u00ed prost\u0159ed\u00ed a dosahuje propustnosti \u2265 200 wafer\u016f za hodinu (WPH) p\u0159i zachov\u00e1n\u00ed p\u0159\u00edsn\u00e9 stability procesu, tak\u017ee je vhodn\u00fd pro pokro\u010dil\u00e9 v\u00fdrobn\u00ed linky polovodi\u010d\u016f kompatibiln\u00ed s LSI.<\/p>\n<h2 data-section-id=\"12rj9ab\" data-start=\"1101\" data-end=\"1126\">Architektura syst\u00e9mu<\/h2>\n<p data-start=\"1128\" data-end=\"1199\">Ai80HC vyu\u017e\u00edv\u00e1 vysp\u011blou a spolehlivou konstrukci svazkov\u00e9 linky, kter\u00e1 se skl\u00e1d\u00e1 z:<\/p>\n<ul data-start=\"1201\" data-end=\"1436\">\n<li data-section-id=\"1kfcth9\" data-start=\"1201\" data-end=\"1215\">Zdroj iont\u016f<\/li>\n<li data-section-id=\"1r1hm7c\" data-start=\"1216\" data-end=\"1237\">Extrak\u010dn\u00ed syst\u00e9m<\/li>\n<li data-section-id=\"1twz66q\" data-start=\"1238\" data-end=\"1255\">Hmotnostn\u00ed analyz\u00e1tor<\/li>\n<li data-section-id=\"ywuuxz\" data-start=\"1256\" data-end=\"1280\">Syst\u00e9m magnetick\u00fdch \u010do\u010dek<\/li>\n<li data-section-id=\"1s57tik\" data-start=\"1281\" data-end=\"1302\">Zrychlovac\u00ed trubice<\/li>\n<li data-section-id=\"pg1cgy\" data-start=\"1303\" data-end=\"1336\">Elektrostatick\u00fd skenovac\u00ed syst\u00e9m<\/li>\n<li data-section-id=\"1iwk7km\" data-start=\"1337\" data-end=\"1367\">Paraleln\u00ed tvarovac\u00ed \u010do\u010dka paprsku<\/li>\n<li data-section-id=\"1cur4hx\" data-start=\"1368\" data-end=\"1401\">Procesn\u00ed komora (koncov\u00e1 stanice)<\/li>\n<li data-section-id=\"qtlnqu\" data-start=\"1402\" data-end=\"1436\">Kazetov\u00fd syst\u00e9m \/ zaklada\u010d oplatek<\/li>\n<\/ul>\n<p data-start=\"1438\" data-end=\"1458\">Je vybaven:<\/p>\n<ul data-start=\"1459\" data-end=\"1572\">\n<li data-section-id=\"1jzaueb\" data-start=\"1459\" data-end=\"1494\">Elektrostatick\u00fd up\u00ednac\u00ed stupe\u0148 pro wafery<\/li>\n<li data-section-id=\"1s8wavu\" data-start=\"1495\" data-end=\"1530\">Technologie iontov\u00e9ho zdroje s dlouhou \u017eivotnost\u00ed<\/li>\n<li data-section-id=\"6mih95\" data-start=\"1531\" data-end=\"1572\">Pln\u011b automatizovan\u00fd syst\u00e9m manipulace s desti\u010dkami<\/li>\n<\/ul>\n<p data-start=\"1574\" data-end=\"1686\">Tato architektura zaji\u0161\u0165uje vysokou stabilitu paprsku, krat\u0161\u00ed prostoje p\u0159i \u00fadr\u017eb\u011b a lep\u0161\u00ed opakovatelnost procesu.<\/p>\n<p data-start=\"1574\" data-end=\"1686\"><img decoding=\"async\" class=\"aligncenter wp-image-2371 size-large\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-1024x388.png\" alt=\"\" width=\"1024\" height=\"388\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-1024x388.png 1024w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-300x114.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-768x291.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-18x7.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs-600x227.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/rs.png 1216w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/p>\n<h2 data-section-id=\"106914\" data-start=\"1693\" data-end=\"1727\">Kl\u00ed\u010dov\u00e9 technick\u00e9 specifikace<\/h2>\n<table>\n<thead>\n<tr>\n<th>Polo\u017eka<\/th>\n<th>Specifikace<\/th>\n<\/tr>\n<\/thead>\n<tbody>\n<tr>\n<td>Velikost oplatky<\/td>\n<td>12 palc\u016f<\/td>\n<\/tr>\n<tr>\n<td>Energetick\u00fd rozsah<\/td>\n<td>0,5 - 80 keV<\/td>\n<\/tr>\n<tr>\n<td>Implantovan\u00e9 prvky<\/td>\n<td>\u00b9\u00b9B\u207a, \u2074\u2079BF\u2082\u207a, \u00b3\u00b9P\u207a, \u2077\u2075As\u207a, \u00b9\u2074N\u207a, \u00b9H\u207a.<\/td>\n<\/tr>\n<tr>\n<td>\u00dahel implant\u00e1tu<\/td>\n<td>0\u00b0 - 45\u00b0<\/td>\n<\/tr>\n<tr>\n<td>\u00dahlov\u00e1 p\u0159esnost<\/td>\n<td>\u2264 0.1\u00b0<\/td>\n<\/tr>\n<tr>\n<td>Rozsah d\u00e1vek<\/td>\n<td>5E11 - 1E17 iont\u016f\/cm\u00b2<\/td>\n<\/tr>\n<tr>\n<td>Stabilita nosn\u00edku<\/td>\n<td>\u2264 10% \/ hodinu (do 60 minut; p\u0159eru\u0161en\u00ed paprsku a oblouk \u2264 1kr\u00e1t)<\/td>\n<\/tr>\n<tr>\n<td>Rovnob\u011b\u017enost paprsk\u016f<\/td>\n<td>\u2264 0.3\u00b0<\/td>\n<\/tr>\n<tr>\n<td>Propustnost (WPH)<\/td>\n<td>\u2265 200 desti\u010dek za hodinu<\/td>\n<\/tr>\n<tr>\n<td>Rovnom\u011brnost (1\u03c3)<\/td>\n<td>\u2264 1%<\/td>\n<\/tr>\n<tr>\n<td>Opakovatelnost (1\u03c3)<\/td>\n<td>\u2264 1%<\/td>\n<\/tr>\n<tr>\n<td>Kompatibilita proces\u016f<\/td>\n<td>Kompatibiln\u00ed s procesem LSI<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<h2 data-section-id=\"yb78ly\" data-start=\"2475\" data-end=\"2506\">Kl\u00ed\u010dov\u00e9 vlastnosti a v\u00fdhody<\/h2>\n<h3 data-section-id=\"13hha2k\" data-start=\"2508\" data-end=\"2541\">1. Inteligentn\u00ed \u0159\u00eddic\u00ed syst\u00e9m<\/h3>\n<p data-start=\"2542\" data-end=\"2706\">Je vybaven vizualizovanou a inteligentn\u00ed softwarovou platformou, kter\u00e1 umo\u017e\u0148uje zjednodu\u0161en\u00e9 ovl\u00e1d\u00e1n\u00ed, rychlou diagnostiku poruch a vysokou stabilitu syst\u00e9mu b\u011bhem v\u00fdroby.<\/p>\n<h3 data-section-id=\"1cy4f9q\" data-start=\"2713\" data-end=\"2740\">2. Zdroj iont\u016f s dlouhou \u017eivotnost\u00ed<\/h3>\n<p data-start=\"2741\" data-end=\"2863\">P\u0159ij\u00edm\u00e1 pokro\u010dilou konstrukci iontov\u00e9ho zdroje s \u017eivotnost\u00ed \u2265500 hodin, co\u017e v\u00fdrazn\u011b sni\u017euje prostoje a n\u00e1klady na \u00fadr\u017ebu.<\/p>\n<h3 data-section-id=\"4euk5j\" data-start=\"2870\" data-end=\"2903\">3. Diagnostick\u00e9 schopnosti paprsku<\/h3>\n<p data-start=\"2904\" data-end=\"2988\">Integrovan\u00fd syst\u00e9m m\u011b\u0159en\u00ed 2D profilu paprsku, kter\u00fd dok\u00e1\u017ee p\u0159esn\u011b monitorovat:<\/p>\n<ul data-start=\"2989\" data-end=\"3019\">\n<li data-section-id=\"1ct5xfp\" data-start=\"2989\" data-end=\"3003\">\u0160\u00ed\u0159ka paprsku<\/li>\n<li data-section-id=\"1vm2uvw\" data-start=\"3004\" data-end=\"3019\">V\u00fd\u0161ka nosn\u00edku<\/li>\n<\/ul>\n<p data-start=\"3021\" data-end=\"3092\">T\u00edm se zvy\u0161uje p\u0159esnost implantace a opakovatelnost procesu.<\/p>\n<h3 data-section-id=\"qq9ajq\" data-start=\"3099\" data-end=\"3132\">4. Vysok\u00e1 efektivita v\u00fdroby<\/h3>\n<p data-start=\"3133\" data-end=\"3310\">Ai80HC poskytuje v\u00edce ne\u017e 1,5\u00d7 vy\u0161\u0161\u00ed propustnost ne\u017e b\u011b\u017en\u00e9 syst\u00e9my, tak\u017ee je vhodn\u00fd pro velkos\u00e9riovou v\u00fdrobu polovodi\u010d\u016f.<\/p>\n<h3 data-section-id=\"1h2ge5m\" data-start=\"3317\" data-end=\"3357\">5. Funkce implant\u00e1tu s pokro\u010dil\u00fdm vzorem<\/h3>\n<p data-start=\"3358\" data-end=\"3429\">Podporuje vzorovanou implantaci iont\u016f, co\u017e umo\u017e\u0148uje distribuci d\u00e1vky v:<\/p>\n<ul data-start=\"3430\" data-end=\"3488\">\n<li data-section-id=\"fqh2r6\" data-start=\"3430\" data-end=\"3450\">Kruhov\u00e9 oblasti<\/li>\n<li data-section-id=\"1aoby05\" data-start=\"3451\" data-end=\"3488\">Segmentace desti\u010dek na z\u00e1klad\u011b kvadrant\u016f<\/li>\n<\/ul>\n<p data-start=\"3490\" data-end=\"3502\">To umo\u017e\u0148uje:<\/p>\n<ul data-start=\"3503\" data-end=\"3617\">\n<li data-section-id=\"chxy3y\" data-start=\"3503\" data-end=\"3552\">V\u00edce procesn\u00edch podm\u00ednek na jedn\u00e9 desti\u010dce<\/li>\n<li data-section-id=\"z1xkzj\" data-start=\"3553\" data-end=\"3589\">Sn\u00ed\u017een\u00ed n\u00e1klad\u016f na v\u00fdvoj procesu<\/li>\n<li data-section-id=\"15uh0gh\" data-start=\"3590\" data-end=\"3617\">Zv\u00fd\u0161en\u00e1 efektivita v\u00fdzkumu a v\u00fdvoje<\/li>\n<\/ul>\n<p data-start=\"3619\" data-end=\"3780\">P\u0159\u00edklad: Jedin\u00fd pl\u00e1tek m\u016f\u017ee sou\u010dasn\u011b obdr\u017eet \u010dty\u0159i r\u016fzn\u00e9 podm\u00ednky implantace ve \u010dty\u0159ech kvadrantech, co\u017e v\u00fdrazn\u011b urychluje optimalizaci procesu.<\/p>\n<h2 data-section-id=\"18zz1hm\" data-start=\"3787\" data-end=\"3810\">Aplikace<\/h2>\n<ul data-start=\"3812\" data-end=\"4005\">\n<li data-section-id=\"16inq9u\" data-start=\"3812\" data-end=\"3839\">V\u00fdroba za\u0159\u00edzen\u00ed CMOS<\/li>\n<li data-section-id=\"xjegvm\" data-start=\"3840\" data-end=\"3875\">Pokro\u010dil\u00e1 v\u00fdroba logick\u00fdch integrovan\u00fdch obvod\u016f<\/li>\n<li data-section-id=\"1xlm3tz\" data-start=\"3876\" data-end=\"3906\">Dopov\u00e1n\u00ed v\u00fdkonov\u00fdch polovodi\u010d\u016f<\/li>\n<li data-section-id=\"1ursyu4\" data-start=\"3907\" data-end=\"3959\">Pilotn\u00ed linky pro v\u00fdzkum a v\u00fdvoj polovodi\u010d\u016f<\/li>\n<li data-section-id=\"1k6v1m6\" data-start=\"3960\" data-end=\"4005\">V\u00fdroba integrovan\u00fdch obvod\u016f na b\u00e1zi k\u0159em\u00edku<\/li>\n<\/ul>\n<h2 data-section-id=\"1idaiwr\" data-start=\"58\" data-end=\"95\">\u010casto kladen\u00e9 ot\u00e1zky (FAQ)<\/h2>\n<h3 data-section-id=\"squ7m7\" data-start=\"97\" data-end=\"166\">1. Pro jakou velikost desti\u010dek je syst\u00e9m Ai80HC (High Beam) ur\u010den?<\/h3>\n<p data-start=\"167\" data-end=\"381\">Syst\u00e9m iontov\u00e9 implantace Ai80HC (High Beam) je ur\u010den pro v\u00fdrobn\u00ed linky na 12palcov\u00e9 k\u0159em\u00edkov\u00e9 desti\u010dky, tak\u017ee je vhodn\u00fd pro pokro\u010dilou v\u00fdrobu polovodi\u010d\u016f a velkoobjemovou v\u00fdrobu integrovan\u00fdch obvod\u016f.<\/p>\n<h3 data-section-id=\"foelcb\" data-start=\"388\" data-end=\"458\">2. Jak\u00fd je energetick\u00fd rozsah a procesn\u00ed schopnost tohoto syst\u00e9mu?<\/h3>\n<p data-start=\"459\" data-end=\"716\">Syst\u00e9m pracuje v energetick\u00e9m rozsahu od 0,5 keV do 80 keV a podporuje jak m\u011blkou, tak st\u0159edn\u011b hlubokou implantaci. Je kompatibiln\u00ed s procesy LSI, v\u010detn\u011b tvorby m\u011blk\u00fdch p\u0159echod\u016f a in\u017een\u00fdrstv\u00ed zdroje\/odtoku v pokro\u010dil\u00fdch struktur\u00e1ch za\u0159\u00edzen\u00ed.<\/p>\n<h3 data-section-id=\"jluc3f\" data-start=\"723\" data-end=\"792\">3. Jakou \u00farove\u0148 p\u0159esnosti a stability syst\u00e9m poskytuje?<\/h3>\n<p data-start=\"793\" data-end=\"850\">Ai80HC (High Beam) zaji\u0161\u0165uje vysokou konzistenci procesu d\u00edky:<\/p>\n<ul data-start=\"851\" data-end=\"965\">\n<li data-section-id=\"8ldlzj\" data-start=\"851\" data-end=\"878\">\u00dahlov\u00e1 p\u0159esnost \u2264 0,1\u00b0<\/li>\n<li data-section-id=\"nyztaj\" data-start=\"879\" data-end=\"905\">Rovnom\u011brnost (1\u03c3) \u2264 1%<\/li>\n<li data-section-id=\"ai4v3y\" data-start=\"906\" data-end=\"935\">Opakovatelnost (1\u03c3) \u2264 1%<\/li>\n<li data-section-id=\"1hjdqzq\" data-start=\"936\" data-end=\"965\">Rovnob\u011b\u017enost paprsku \u2264 0,3\u00b0<\/li>\n<\/ul>\n<p data-start=\"967\" data-end=\"1069\">Tyto specifikace zaji\u0161\u0165uj\u00ed stabiln\u00ed v\u00fdkon od waferu k waferu a vysokou v\u00fdt\u011b\u017enost v\u00fdroby polovodi\u010d\u016f.<\/p>","protected":false},"excerpt":{"rendered":"<p>Iontov\u00fd implanta\u010dn\u00ed syst\u00e9m \u0159ady Ai80HC (High Beam) je vysokoproud\u00fd iontov\u00fd implant\u00e1tor speci\u00e1ln\u011b navr\u017een\u00fd pro v\u00fdrobn\u00ed linky na 12palcov\u00e9 k\u0159em\u00edkov\u00e9 pl\u00e1tky polovodi\u010d\u016f. Je navr\u017een pro pokro\u010dil\u00e9 p\u0159esn\u00e9 dopov\u00e1n\u00ed v modern\u00ed v\u00fdrob\u011b integrovan\u00fdch obvod\u016f, poskytuje stabiln\u00ed v\u00fdkon paprsku, vysokou opakovatelnost procesu a vynikaj\u00edc\u00ed p\u0159esnost kontroly d\u00e1vky.<\/p>","protected":false},"featured_media":2343,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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