{"id":2196,"date":"2026-04-14T06:34:45","date_gmt":"2026-04-14T06:34:45","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2196"},"modified":"2026-04-14T06:34:48","modified_gmt":"2026-04-14T06:34:48","slug":"2-inch-6h-n-silicon-carbide-wafer","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/cs\/product\/2-inch-6h-n-silicon-carbide-wafer\/","title":{"rendered":"2palcov\u00e1 desti\u010dka z karbidu k\u0159em\u00edku 6H-N"},"content":{"rendered":"

\"2palcov\u00e1Dvoupalcov\u00e1 desti\u010dka 6H-N z karbidu k\u0159em\u00edku je monokrystalick\u00fd substr\u00e1t ur\u010den\u00fd pro v\u00fdzkum i pro aplikace na \u00farovni za\u0159\u00edzen\u00ed. Polytyp 6H se vyzna\u010duje hexagon\u00e1ln\u00ed krystalovou strukturou, kter\u00e1 zaji\u0161\u0165uje stabiln\u00ed elektrickou vodivost a dobr\u00fd tepeln\u00fd v\u00fdkon v n\u00e1ro\u010dn\u00fdch podm\u00ednk\u00e1ch.<\/p>\n

D\u00edky p\u00e1sov\u00e9 meze\u0159e p\u0159ibli\u017en\u011b 3,02 eV umo\u017e\u0148uje 6H-SiC provoz v prost\u0159ed\u00edch, kde tradi\u010dn\u00ed k\u0159em\u00edkov\u00e9 materi\u00e1ly selh\u00e1vaj\u00ed, zejm\u00e9na v podm\u00ednk\u00e1ch vysok\u00e9ho nap\u011bt\u00ed, vysok\u00fdch teplot a vysok\u00fdch frekvenc\u00ed. D\u00edky tomu je vhodn\u00fd pro prototypov\u00e1n\u00ed za\u0159\u00edzen\u00ed v ran\u00e9 f\u00e1zi v\u00fdvoje, testov\u00e1n\u00ed materi\u00e1l\u016f a v\u00fdrobu specializovan\u00fdch elektronick\u00fdch sou\u010d\u00e1stek.<\/p>\n

Desky ZMSH SiC se vyr\u00e1b\u011bj\u00ed pomoc\u00ed \u0159\u00edzen\u00fdch technik r\u016fstu krystal\u016f, aby se zajistila konzistentn\u00ed rezistivita, n\u00edzk\u00e1 hustota defekt\u016f a vysok\u00e1 kvalita povrchu. Tyto parametry jsou rozhoduj\u00edc\u00ed pro zaji\u0161t\u011bn\u00ed reprodukovateln\u00fdch experiment\u00e1ln\u00edch v\u00fdsledk\u016f a stabiln\u00edho v\u00fdkonu za\u0159\u00edzen\u00ed.<\/p>\n

Kl\u00ed\u010dov\u00e9 vlastnosti<\/h2>\n

Vodiv\u00e1 struktura typu N<\/h3>\n

Desti\u010dka je dopov\u00e1na jako typ N, co\u017e zaji\u0161\u0165uje stabiln\u00ed dr\u00e1hy veden\u00ed elektron\u016f vhodn\u00e9 pro v\u00fdrobu polovodi\u010dov\u00fdch za\u0159\u00edzen\u00ed a experimenty s elektrickou charakterizac\u00ed.<\/p>\n

Polovodi\u010dov\u00fd materi\u00e1l se \u0161irok\u00fdm p\u00e1smov\u00fdm rozp\u011bt\u00edm<\/h3>\n

S p\u00e1smovou mezerou ~3,02 eV podporuje SiC ve srovn\u00e1n\u00ed s k\u0159em\u00edkem v\u00fdrazn\u011b vy\u0161\u0161\u00ed intenzitu elektrick\u00e9ho pole, co\u017e umo\u017e\u0148uje vysokonap\u011b\u0165ov\u00fd provoz a lep\u0161\u00ed \u00fa\u010dinnost za\u0159\u00edzen\u00ed.<\/p>\n

Vysok\u00e1 tepeln\u00e1 vodivost<\/h3>\n

SiC vykazuje vynikaj\u00edc\u00ed tepelnou vodivost, co\u017e umo\u017e\u0148uje \u00fa\u010dinn\u00fd odvod tepla z aktivn\u00edch oblast\u00ed za\u0159\u00edzen\u00ed. To zvy\u0161uje spolehlivost za\u0159\u00edzen\u00ed a prodlu\u017euje jeho provozn\u00ed \u017eivotnost v aplikac\u00edch s vysok\u00fdm v\u00fdkonem.<\/p>\n

Vysok\u00e1 mechanick\u00e1 pevnost<\/h3>\n

D\u00edky tvrdosti podle Mohse p\u0159ibli\u017en\u011b 9,2 jsou pl\u00e1tky SiC velmi odoln\u00e9 v\u016f\u010di mechanick\u00e9mu po\u0161kozen\u00ed, opot\u0159eben\u00ed povrchu a nam\u00e1h\u00e1n\u00ed p\u0159i v\u00fdrob\u011b.<\/p>\n

Vysok\u00e9 pr\u016frazn\u00e9 elektrick\u00e9 pole<\/h3>\n

Vysok\u00e1 intenzita pr\u016frazn\u00e9ho pole umo\u017e\u0148uje kompaktn\u00ed strukturu za\u0159\u00edzen\u00ed p\u0159i zachov\u00e1n\u00ed vysok\u00e9 nap\u011b\u0165ov\u00e9 tolerance, d\u00edky \u010demu\u017e je SiC ide\u00e1ln\u00ed pro pokro\u010dilou v\u00fdkonovou elektroniku.<\/p>\n

Technick\u00e9 specifikace<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Parametr<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
Materi\u00e1l<\/td>\nMonokrystalick\u00fd karbid k\u0159em\u00edku<\/td>\n<\/tr>\n
Zna\u010dka<\/td>\nZMSH<\/td>\n<\/tr>\n
Polytyp<\/td>\n6H-N<\/td>\n<\/tr>\n
Pr\u016fm\u011br<\/td>\n2 palce (50,8 mm)<\/td>\n<\/tr>\n
Tlou\u0161\u0165ka<\/td>\n350 \u03bcm \/ 650 \u03bcm<\/td>\n<\/tr>\n
Typ vodivosti<\/td>\nN-typ<\/td>\n<\/tr>\n
Povrchov\u00e1 \u00faprava<\/td>\nLe\u0161t\u011bn\u00fd Si-\u010del CMP<\/td>\n<\/tr>\n
O\u0161et\u0159en\u00ed obli\u010deje C<\/td>\nMechanick\u00e9 le\u0161t\u011bn\u00ed<\/td>\n<\/tr>\n
Drsnost povrchu<\/td>\nRa < 0,2 nm (Si-\u010delo)<\/td>\n<\/tr>\n
Odolnost<\/td>\n0,015 - 0,028 \u03a9-cm<\/td>\n<\/tr>\n
Barva<\/td>\nTransparentn\u00ed \/ sv\u011btle zelen\u00e1<\/td>\n<\/tr>\n
Balen\u00ed<\/td>\nKontejner na jednotliv\u00e9 oplatky<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Vlastnosti materi\u00e1lu 6H-SiC<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Majetek<\/th>\nHodnota<\/th>\n<\/tr>\n<\/thead>\n
Parametry m\u0159\u00ed\u017eky<\/td>\na = 3,073 \u00c5, c = 15,117 \u00c5<\/td>\n<\/tr>\n
Tvrdost podle Mohse<\/td>\n\u2248 9.2<\/td>\n<\/tr>\n
Hustota<\/td>\n3,21 g\/cm\u00b3<\/td>\n<\/tr>\n
Koeficient tepeln\u00e9 rozta\u017enosti<\/td>\n4-5 \u00d710-\u2076 \/K<\/td>\n<\/tr>\n
Index lomu (750 nm)<\/td>\nn\u2080 = 2,60, n\u2091 = 2,65<\/td>\n<\/tr>\n
Dielektrick\u00e1 konstanta<\/td>\n\u2248 9.66<\/td>\n<\/tr>\n
Tepeln\u00e1 vodivost<\/td>\n~3,7-3,9 W\/cm-K<\/td>\n<\/tr>\n
P\u00e1smov\u00e1 propust<\/td>\n3,02 eV<\/td>\n<\/tr>\n
Elektrick\u00e9 pole rozpadu<\/td>\n3-5 \u00d710\u2076 V\/cm<\/td>\n<\/tr>\n
Rychlost driftu nasycen\u00ed<\/td>\n2,0 \u00d710\u2075 m\/s<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

D\u00edky t\u011bmto vlastnostem je 6H-SiC vhodn\u00fd pro aplikace vy\u017eaduj\u00edc\u00ed stabiln\u00ed v\u00fdkon v extr\u00e9mn\u00edch elektrick\u00fdch a tepeln\u00fdch podm\u00ednk\u00e1ch.<\/p>\n

\"2palcov\u00e1V\u00fdrobn\u00ed proces<\/h2>\n

SiC monokrystalick\u00e9 pl\u00e1tky se obvykle vyr\u00e1b\u011bj\u00ed pomoc\u00ed Metoda fyzik\u00e1ln\u00edho transportu par (PVT)<\/strong>, vysp\u011bl\u00fd pr\u016fmyslov\u00fd proces pro r\u016fst krystal\u016f polovodi\u010d\u016f se \u0161irok\u00fdm p\u00e1smem.<\/p>\n

P\u0159i tomto procesu je zdrojov\u00fd materi\u00e1l SiC vysok\u00e9 \u010distoty sublimov\u00e1n p\u0159i teplot\u00e1ch nad 2000 \u00b0C. P\u00e1ry jsou transportov\u00e1ny p\u0159es pe\u010dliv\u011b \u0159\u00edzen\u00fd tepeln\u00fd gradient a rekrystalizuj\u00ed na seed krystalu, \u010d\u00edm\u017e vznik\u00e1 monokrystalick\u00fd ingot (boule). Po r\u016fstu se bule zpracov\u00e1v\u00e1 na desti\u010dky kr\u00e1jen\u00edm, lapov\u00e1n\u00edm, le\u0161t\u011bn\u00edm a \u010di\u0161t\u011bn\u00edm.<\/p>\n

Pro pou\u017eit\u00ed v za\u0159\u00edzen\u00edch mohou b\u00fdt desti\u010dky podrobeny dal\u0161\u00edm \u00faprav\u00e1m. Epitaxn\u00ed r\u016fst pomoc\u00ed chemick\u00e9 depozice z par (CVD)<\/strong>, co\u017e umo\u017e\u0148uje p\u0159esn\u00e9 \u0159\u00edzen\u00ed koncentrace dopov\u00e1n\u00ed a tlou\u0161\u0165ky vrstvy. Tento krok je nezbytn\u00fd pro v\u00fdrobu MOSFET\u016f a diod.<\/p>\n

Aplikace<\/h2>\n

V\u00fdkonov\u00e1 elektronika<\/h3>\n

Dvoupalcov\u00e9 SiC desti\u010dky 6H-N se pou\u017e\u00edvaj\u00ed p\u0159i v\u00fdvoji a prototypov\u00e1n\u00ed v\u00fdkonov\u00fdch polovodi\u010dov\u00fdch za\u0159\u00edzen\u00ed, v\u010detn\u011b diod, struktur MOSFET a v\u00fdkonov\u00fdch modul\u016f. Tato za\u0159\u00edzen\u00ed jsou nezbytn\u00e1 pro syst\u00e9my p\u0159em\u011bny energie a obvody \u0159\u00edzen\u00ed spot\u0159eby.<\/p>\n

Vysokoteplotn\u00ed elektronika<\/h3>\n

Materi\u00e1ly SiC si zachov\u00e1vaj\u00ed stabiln\u00ed elektrick\u00fd v\u00fdkon p\u0159i zv\u00fd\u0161en\u00fdch teplot\u00e1ch, tak\u017ee jsou vhodn\u00e9 pro leteckou elektroniku, pr\u016fmyslov\u00e9 monitorovac\u00ed syst\u00e9my a aplikace v energetick\u00e9 infrastruktu\u0159e.<\/p>\n

V\u00fdzkum a v\u00fdvoj polovodi\u010d\u016f<\/h3>\n

D\u00edky sv\u00e9 dostupnosti a cenov\u00e9 v\u00fdhodnosti jsou 2palcov\u00e9 desti\u010dky \u0161iroce pou\u017e\u00edv\u00e1ny v univerzitn\u00edch laborato\u0159\u00edch, v\u00fdzkumn\u00fdch \u00fastavech a pilotn\u00edch v\u00fdrobn\u00edch prost\u0159ed\u00edch pro studium materi\u00e1l\u016f a experimentov\u00e1n\u00ed se za\u0159\u00edzen\u00edmi.<\/p>\n

Optoelektronick\u00e9 a speci\u00e1ln\u00ed aplikace<\/h3>\n

SiC tak\u00e9 vykazuje optickou pr\u016fhlednost v ur\u010dit\u00fdch vlnov\u00fdch d\u00e9lk\u00e1ch, co\u017e umo\u017e\u0148uje jeho pou\u017eit\u00ed ve specializovan\u00fdch fotonick\u00fdch a optoelektronick\u00fdch v\u00fdzkumn\u00fdch aplikac\u00edch.<\/p>\n

V\u00fdhody\"2palcov\u00e1<\/h2>\n

Dvoupalcov\u00e1 platforma SiC wafer\u016f poskytuje n\u011bkolik v\u00fdhod pro v\u00fdzkum a v\u00fdvoj:<\/p>\n

    \n
  • Ni\u017e\u0161\u00ed n\u00e1klady ve srovn\u00e1n\u00ed s v\u011bt\u0161\u00edmi velikostmi desti\u010dek<\/li>\n
  • Snadn\u011bj\u0161\u00ed manipulace p\u0159i laboratorn\u00edch pokusech<\/li>\n
  • Vhodn\u00e9 pro rychl\u00e9 prototypov\u00e1n\u00ed a testov\u00e1n\u00ed proces\u016f<\/li>\n
  • Stabiln\u00ed kvalita krystal\u016f pro reprodukovateln\u00e9 v\u00fdsledky<\/li>\n
  • Flexibiln\u00ed mo\u017enosti p\u0159izp\u016fsoben\u00ed pro pot\u0159eby v\u00fdzkumu<\/li>\n<\/ul>\n

    \u010cASTO KLADEN\u00c9 DOTAZY<\/h2>\n

    Ot\u00e1zka 1: Jak\u00fd je rozd\u00edl mezi 6H-SiC a 4H-SiC?<\/h3>\n

    6H-SiC a 4H-SiC jsou r\u016fzn\u00e9 krystalov\u00e9 polytypy. 4H-SiC obecn\u011b nab\u00edz\u00ed vy\u0161\u0161\u00ed pohyblivost elektron\u016f a je \u0161iroce pou\u017e\u00edv\u00e1n v komer\u010dn\u00edch energetick\u00fdch za\u0159\u00edzen\u00edch, zat\u00edmco 6H-SiC poskytuje stabiln\u00ed elektrick\u00e9 chov\u00e1n\u00ed a je b\u011b\u017en\u011b pou\u017e\u00edv\u00e1n ve v\u00fdzkumu a specifick\u00fdch elektronick\u00fdch aplikac\u00edch.<\/p>\n

    Ot\u00e1zka 2: Jak\u00e1 povrchov\u00e1 \u00faprava se na desti\u010dku aplikuje?<\/h3>\n

    \u010celn\u00ed strana Si je le\u0161t\u011bna pomoc\u00ed chemicko-mechanick\u00e9ho le\u0161t\u011bn\u00ed (CMP), aby se dos\u00e1hlo velmi hladk\u00e9ho povrchu (Ra < 0,2 nm). \u010celn\u00ed strana C je le\u0161t\u011bna mechanicky, aby vyhovovala r\u016fzn\u00fdm po\u017eadavk\u016fm na zpracov\u00e1n\u00ed.<\/p>\n

    Ot\u00e1zka 3: Lze specifikace oplatek p\u0159izp\u016fsobit?<\/h3>\n

    Ano. ZMSH poskytuje mo\u017enosti p\u0159izp\u016fsoben\u00ed v\u010detn\u011b tlou\u0161\u0165ky, koncentrace dopov\u00e1n\u00ed, rozsahu odporu a p\u0159\u00edpravy povrchu podle po\u017eadavk\u016f z\u00e1kazn\u00edka.<\/p>","protected":false},"excerpt":{"rendered":"

    Spole\u010dnost ZMSH dod\u00e1v\u00e1 vysoce kvalitn\u00ed 2palcov\u00e9 desti\u010dky z karbidu k\u0159em\u00edku (SiC) 6H-N ur\u010den\u00e9 pro v\u00fdzkum polovodi\u010d\u016f, v\u00fdvoj v\u00fdkonov\u00e9 elektroniky a v\u00fdrobu vysoce v\u00fdkonn\u00fdch elektronick\u00fdch za\u0159\u00edzen\u00ed. Karbid k\u0159em\u00edku je polovodi\u010dov\u00fd materi\u00e1l se \u0161irok\u00fdm p\u00e1smem, kter\u00fd m\u00e1 ve srovn\u00e1n\u00ed s b\u011b\u017en\u00fdmi k\u0159em\u00edkov\u00fdmi (Si) substr\u00e1ty vynikaj\u00edc\u00ed elektrick\u00e9, tepeln\u00e9 a mechanick\u00e9 vlastnosti.<\/p>","protected":false},"featured_media":2197,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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