![\"4H-N](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/6_inch_silicon_carbide_sic_wafer_for_ar_glasses_mos_sbd2-300x300.webp\")
<\/p>\n\u0160estipalcov\u00e1 desti\u010dka z karbidu k\u0159em\u00edku 4H-N je polovodi\u010dov\u00fd substr\u00e1t se \u0161irok\u00fdm p\u00e1smem navr\u017een\u00fd pro v\u00fdkonov\u00e9 elektronick\u00e9 p\u0159\u00edstroje nov\u00e9 generace. V porovn\u00e1n\u00ed s tradi\u010dn\u00edmi k\u0159em\u00edkov\u00fdmi materi\u00e1ly nab\u00edz\u00ed SiC v\u00fdrazn\u011b vy\u0161\u0161\u00ed pr\u016fraznou elektrickou pevnost, vynikaj\u00edc\u00ed tepelnou vodivost a stabiln\u00ed v\u00fdkon p\u0159i vysok\u00fdch teplot\u00e1ch a vysok\u00e9m nap\u011bt\u00ed.<\/p>\n
\u0160irok\u00e1 p\u00e1smov\u00e1 mezera p\u0159ibli\u017en\u011b 3,26 eV umo\u017e\u0148uje za\u0159\u00edzen\u00edm na b\u00e1zi SiC pracovat p\u0159i vy\u0161\u0161\u00edch nap\u011bt\u00edch a sp\u00ednac\u00edch frekvenc\u00edch p\u0159i zachov\u00e1n\u00ed ni\u017e\u0161\u00edch energetick\u00fdch ztr\u00e1t. D\u00edky tomu se SiC stal kl\u00ed\u010dov\u00fdm materi\u00e1lem pro vysoce \u00fa\u010dinn\u00e9 syst\u00e9my p\u0159em\u011bny energie, v\u010detn\u011b elektrick\u00fdch vozidel, syst\u00e9m\u016f obnoviteln\u00fdch zdroj\u016f energie a pr\u016fmyslov\u00fdch zdroj\u016f energie.<\/p>\n
\u0160estipalcov\u00fd (150mm) form\u00e1t desti\u010dek je v sou\u010dasn\u00e9 dob\u011b hlavn\u00edm pr\u016fmyslov\u00fdm standardem pro v\u00fdrobu SiC za\u0159\u00edzen\u00ed. Poskytuje optim\u00e1ln\u00ed rovnov\u00e1hu mezi v\u00fdt\u011b\u017enost\u00ed v\u00fdroby, vysp\u011blost\u00ed procesu a n\u00e1kladovou efektivitou, tak\u017ee je vhodn\u00fd jak pro masovou v\u00fdrobu, tak pro pokro\u010dil\u00e9 v\u00fdzkumn\u00e9 aplikace.<\/p>\n
4H-SiC je nejpou\u017e\u00edvan\u011bj\u0161\u00edm polytypem ve v\u00fdkonov\u00e9 elektronice d\u00edky sv\u00e9 p\u0159\u00edzniv\u00e9 krystalov\u00e9 symetrii a elektrick\u00fdm vlastnostem.<\/p>\n
Mezi kl\u00ed\u010dov\u00e9 vnit\u0159n\u00ed vlastnosti pat\u0159\u00ed:<\/p>\n
D\u00edky t\u011bmto vlastnostem je SiC kritick\u00fdm materi\u00e1lem pro vysoce v\u00fdkonn\u00e9 polovodi\u010dov\u00e9 sou\u010d\u00e1stky s vysokou \u00fa\u010dinnost\u00ed.<\/p>\n
![\"6palcov\u00e1](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/6_inch_silicon_carbide_sic_wafer_for_ar_glasses_mos_sbd4-300x300.webp\")
R\u016fst krystal\u016f a v\u00fdrobn\u00ed proces<\/h2>\nDesky SiC se obvykle vyr\u00e1b\u011bj\u00ed metodou fyzik\u00e1ln\u00edho transportu par (PVT), co\u017e je vysp\u011bl\u00fd pr\u016fmyslov\u00fd proces pro r\u016fst objemov\u00fdch krystal\u016f SiC.<\/p>\n
P\u0159i tomto procesu se pr\u00e1\u0161ek SiC vysok\u00e9 \u010distoty sublimuje p\u0159i teplot\u00e1ch nad 2000 \u00b0C. Druhy v plynn\u00e9 f\u00e1zi jsou transportov\u00e1ny pod pe\u010dliv\u011b \u0159\u00edzen\u00fdmi tepeln\u00fdmi gradienty a rekrystalizuj\u00ed na krystalu, \u010d\u00edm\u017e se vytvo\u0159\u00ed monokrystalick\u00e1 boule.<\/p>\n
Po r\u016fstu krystal\u016f materi\u00e1l proch\u00e1z\u00ed:<\/p>\n
Pro v\u00fdrobu za\u0159\u00edzen\u00ed lze pou\u017e\u00edt dal\u0161\u00ed epitaxn\u00ed proces CVD (Chemical Vapor Deposition) pro vytvo\u0159en\u00ed vysoce kvalitn\u00edch epitaxn\u00edch vrstev s \u0159\u00edzenou koncentrac\u00ed a tlou\u0161\u0165kou.<\/p>\n
| Majetek<\/th>\n | T\u0159\u00edda Z (v\u00fdrobn\u00ed t\u0159\u00edda)<\/th>\n | T\u0159\u00edda D (in\u017een\u00fdrsk\u00e1 t\u0159\u00edda)<\/th>\n<\/tr>\n<\/thead>\n |
|---|---|---|
| Pr\u016fm\u011br<\/td>\n | 149,5 - 150,0 mm<\/td>\n | 149,5 - 150,0 mm<\/td>\n<\/tr>\n |
| Polytyp<\/td>\n | 4H-SiC<\/td>\n | 4H-SiC<\/td>\n<\/tr>\n |
| Tlou\u0161\u0165ka<\/td>\n | 350 \u00b1 15 \u00b5m<\/td>\n | 350 \u00b1 25 \u00b5m<\/td>\n<\/tr>\n |
| Typ vodivosti<\/td>\n | N-typ<\/td>\n | N-typ<\/td>\n<\/tr>\n |
| \u00dahel mimo osu<\/td>\n | 4,0\u00b0 sm\u011brem k \u00b1 0,5\u00b0<\/td>\n | 4,0\u00b0 sm\u011brem k \u00b1 0,5\u00b0<\/td>\n<\/tr>\n |
| Odolnost<\/td>\n | 0,015 - 0,024 \u03a9-cm<\/td>\n | 0,015 - 0,028 \u03a9-cm<\/td>\n<\/tr>\n |
| Hustota mikrotrubi\u010dek<\/td>\n | \u2264 0,2 cm-\u00b2<\/td>\n | \u2264 15 cm-\u00b2<\/td>\n<\/tr>\n |
| Drsnost povrchu (Ra)<\/td>\n | \u2264 1 nm<\/td>\n | \u2264 1 nm<\/td>\n<\/tr>\n |
| Drsnost CMP<\/td>\n | \u2264 0,2 nm<\/td>\n | \u2264 0,5 nm<\/td>\n<\/tr>\n |
| LTV<\/td>\n | \u2264 2,5 \u00b5m<\/td>\n | \u2264 5 \u00b5m<\/td>\n<\/tr>\n |
| TTV<\/td>\n | \u2264 6 \u00b5m<\/td>\n | \u2264 15 \u00b5m<\/td>\n<\/tr>\n |
| Luk<\/td>\n | \u2264 25 \u00b5m<\/td>\n | \u2264 40 \u00b5m<\/td>\n<\/tr>\n |
| Warp<\/td>\n | \u2264 35 \u00b5m<\/td>\n | \u2264 60 \u00b5m<\/td>\n<\/tr>\n |
| Vylou\u010den\u00ed okraj\u016f<\/td>\n | 3 mm<\/td>\n | 3 mm<\/td>\n<\/tr>\n |
| Balen\u00ed<\/td>\n | Kazeta \/ Jednotliv\u00e9 oplatky<\/td>\n | Kazeta \/ Jednotliv\u00e9 oplatky<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
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![\"6palcov\u00e1](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/6_inch_silicon_carbide_sic_wafer_for_ar_glasses_mos_sbd1-300x300.webp\")
Kontrola kvality a inspekce<\/h2>\n