{"id":2183,"date":"2026-04-14T05:20:25","date_gmt":"2026-04-14T05:20:25","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2183"},"modified":"2026-04-14T05:20:28","modified_gmt":"2026-04-14T05:20:28","slug":"8-inch-sic-epitaxial-wafer","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/cs\/product\/8-inch-sic-epitaxial-wafer\/","title":{"rendered":"8palcov\u00e1 200mm epitaxi\u00e1ln\u00ed desti\u010dka SiC"},"content":{"rendered":"

\"8palcov\u00e18palcov\u00fd epitaxn\u00ed pl\u00e1tek SiC p\u0159edstavuje nejnov\u011bj\u0161\u00ed pokrok v technologii polovodi\u010d\u016f se \u0161irok\u00fdm p\u00e1smem. Tento produkt je postaven na 200mm substr\u00e1tu SiC s vysoce kvalitn\u00ed epitaxn\u00ed vrstvou a je navr\u017een tak, aby podporoval \u0161k\u00e1lovatelnou v\u00fdrobu vysoce \u00fa\u010dinn\u00fdch v\u00fdkonov\u00fdch za\u0159\u00edzen\u00ed.<\/p>\n

V porovn\u00e1n\u00ed s men\u0161\u00edmi velikostmi desti\u010dek se u 8palcov\u00fdch desti\u010dek SiC v\u00fdrazn\u011b zv\u011bt\u0161uje vyu\u017eiteln\u00e1 plocha, co\u017e umo\u017e\u0148uje vy\u0161\u0161\u00ed v\u00fdkon za\u0159\u00edzen\u00ed na desti\u010dku a sni\u017euje n\u00e1klady na \u010dip. To z nich \u010din\u00ed z\u00e1sadn\u00ed \u0159e\u0161en\u00ed pro pr\u016fmyslov\u00e1 odv\u011btv\u00ed p\u0159ech\u00e1zej\u00edc\u00ed na velkokapacitn\u00ed v\u00fdrobu v\u00fdkonov\u00fdch za\u0159\u00edzen\u00ed z karbidu k\u0159em\u00edku.<\/p>\n

SiC epitaxn\u00ed desti\u010dky kombinuj\u00ed vnit\u0159n\u00ed v\u00fdhody karbidu k\u0159em\u00edku, v\u010detn\u011b \u0161irok\u00e9ho p\u00e1sma, vysok\u00e9ho pr\u016frazn\u00e9ho elektrick\u00e9ho pole a vynikaj\u00edc\u00ed tepeln\u00e9 vodivosti, s p\u0159esn\u011b \u0159\u00edzen\u00fdmi epitaxn\u00edmi vrstvami p\u0159izp\u016fsoben\u00fdmi pro v\u00fdrobu za\u0159\u00edzen\u00ed. Tyto desti\u010dky se \u0161iroce pou\u017e\u00edvaj\u00ed v MOSFETech nov\u00e9 generace, Schottkyho diod\u00e1ch a integrovan\u00fdch v\u00fdkonov\u00fdch modulech.<\/p>\n

\n

Kl\u00ed\u010dov\u00e9 specifikace<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Parametr<\/th>\nHodnota<\/th>\n<\/tr>\n<\/thead>\n
Pr\u016fm\u011br<\/td>\n200 \u00b1 0,5 mm<\/td>\n<\/tr>\n
Polytyp<\/td>\n4H-SiC<\/td>\n<\/tr>\n
Typ vodivosti<\/td>\nN-typ<\/td>\n<\/tr>\n
Tlou\u0161\u0165ka<\/td>\n700 \u00b1 50 \u03bcm<\/td>\n<\/tr>\n
Povrchov\u00e1 \u00faprava<\/td>\nOboustrann\u011b le\u0161t\u011bn\u00fd CMP<\/td>\n<\/tr>\n
Orientace<\/td>\n4,0\u00b0 mimo osu \u00b10,5\u00b0<\/td>\n<\/tr>\n
Z\u00e1\u0159ez<\/td>\nStandardn\u00ed orientace z\u00e1\u0159ezu<\/td>\n<\/tr>\n
Hranat\u00fd profil<\/td>\nZkosen\u00ed \/ zaoblen\u00ed hran<\/td>\n<\/tr>\n
Drsnost povrchu<\/td>\nSubnanometrick\u00e1 \u00farove\u0148<\/td>\n<\/tr>\n
Balen\u00ed<\/td>\nKazeta nebo n\u00e1doba na jednotliv\u00e9 oplatky<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Typick\u00e1 rezistivita:<\/p>\n

    \n
  • Typ N: 0,015-0,028 \u03a9-cm<\/li>\n
  • Poloizola\u010dn\u00ed: \u22651E7 \u03a9-cm<\/li>\n<\/ul>\n

    Dostupn\u00e9 t\u0159\u00eddy:<\/p>\n

      \n
    • Nulov\u00fd stupe\u0148 MPD<\/li>\n
    • V\u00fdrobn\u00ed t\u0159\u00edda<\/li>\n
    • Stupe\u0148 v\u00fdzkumu<\/li>\n
    • T\u0159\u00edda figur\u00edny<\/li>\n<\/ul>\n

      \"8palcov\u00e1Schopnosti epitaxn\u00ed vrstvy<\/h2>\n

      Epitaxn\u00ed vrstva se p\u011bstuje pomoc\u00ed pokro\u010dil\u00e9 technologie chemick\u00e9ho napa\u0159ov\u00e1n\u00ed (CVD), kter\u00e1 umo\u017e\u0148uje p\u0159esnou kontrolu tlou\u0161\u0165ky, koncentrace dopov\u00e1n\u00ed a rovnom\u011brnosti.<\/p>\n

      Dostupn\u00e9 \u00fapravy zahrnuj\u00ed:<\/p>\n

        \n
      • epitaxn\u00ed vrstvy typu N nebo P<\/li>\n
      • Nastaviteln\u00e1 tlou\u0161\u0165ka epi pro r\u016fzn\u00e9 struktury za\u0159\u00edzen\u00ed<\/li>\n
      • Rovnom\u011brn\u00e9 profily dopov\u00e1n\u00ed na cel\u00e9 desti\u010dce<\/li>\n
      • N\u00edzk\u00e1 hustota defekt\u016f pro vysokou v\u00fdt\u011b\u017enost za\u0159\u00edzen\u00ed<\/li>\n<\/ul>\n

        Vysoce kvalitn\u00ed epitaxe je nezbytn\u00e1 pro dosa\u017een\u00ed stabiln\u00edho elektrick\u00e9ho v\u00fdkonu a dlouhodob\u00e9 spolehlivosti v\u00fdkonov\u00fdch za\u0159\u00edzen\u00ed.<\/p>\n

        \"8palcov\u00e1V\u00fdrobn\u00ed proces<\/h2>\n

        P\u0159\u00edprava substr\u00e1tu<\/strong>
        Monokrystalick\u00e9 substr\u00e1ty SiC s vysokou \u010distotou se vyr\u00e1b\u011bj\u00ed pomoc\u00ed vysokoteplotn\u00edch metod r\u016fstu a le\u0161t\u00ed se pro dosa\u017een\u00ed velmi n\u00edzk\u00e9 drsnosti povrchu.<\/p>\n

        Epitaxn\u00ed r\u016fst<\/strong>
        Epitaxn\u00ed vrstva se nan\u00e1\u0161\u00ed p\u0159i vysok\u00e9 teplot\u011b pomoc\u00ed syst\u00e9m\u016f CVD, co\u017e zaji\u0161\u0165uje rovnom\u011brnou tlou\u0161\u0165ku a konzistentn\u00ed vlastnosti materi\u00e1lu na cel\u00e9 200mm desti\u010dce.<\/p>\n

        Dopingov\u00e1 kontrola<\/strong>
        P\u0159i epitaxn\u00edm r\u016fstu se pou\u017e\u00edv\u00e1 p\u0159esn\u00e9 dopov\u00e1n\u00ed, aby se splnily po\u017eadavky r\u016fzn\u00fdch architektur za\u0159\u00edzen\u00ed.<\/p>\n

        Metrologie a kontrola<\/strong>
        Ka\u017ed\u00fd pl\u00e1tek proch\u00e1z\u00ed komplexn\u00edm testov\u00e1n\u00edm, v\u010detn\u011b anal\u00fdzy povrchu, mapov\u00e1n\u00ed defekt\u016f a elektrick\u00e9 charakterizace, aby byla zaji\u0161t\u011bna konzistentn\u00ed kvalita.<\/p>\n

        V\u00fdhody<\/h2>\n

        \u0160k\u00e1lovateln\u00e1 v\u00fdroba<\/strong>
        Velikost desti\u010dky 8 palc\u016f v\u00fdrazn\u011b zvy\u0161uje v\u00fdkon \u010dipu na desti\u010dku, co\u017e zvy\u0161uje efektivitu v\u00fdroby a sni\u017euje n\u00e1klady na za\u0159\u00edzen\u00ed.<\/p>\n

        Vysok\u00e1 \u00fa\u010dinnost<\/strong>
        Vlastnosti materi\u00e1lu SiC umo\u017e\u0148uj\u00ed ni\u017e\u0161\u00ed sp\u00ednac\u00ed ztr\u00e1ty, vy\u0161\u0161\u00ed hustotu v\u00fdkonu a lep\u0161\u00ed energetickou \u00fa\u010dinnost.<\/p>\n

        Vynikaj\u00edc\u00ed tepeln\u00fd management<\/strong>
        Vysok\u00e1 tepeln\u00e1 vodivost podporuje stabiln\u00ed provoz p\u0159i vysok\u00e9m v\u00fdkonu a sni\u017euje n\u00e1roky na chlazen\u00ed.<\/p>\n

        N\u00edzk\u00e1 hustota defekt\u016f<\/strong>
        Pokro\u010dil\u00e9 procesy r\u016fstu krystal\u016f a epitaxn\u00ed procesy zaji\u0161\u0165uj\u00ed vysokou v\u00fdt\u011b\u017enost a spolehliv\u00fd v\u00fdkon za\u0159\u00edzen\u00ed.<\/p>\n

        Platforma p\u0159ipraven\u00e1 na budoucnost<\/strong>
        8palcov\u00e9 desti\u010dky SiC jsou v souladu s trendem polovodi\u010dov\u00e9ho pr\u016fmyslu sm\u011b\u0159uj\u00edc\u00edm k v\u011bt\u0161\u00edm form\u00e1t\u016fm desti\u010dek a automatizovan\u00e9 hromadn\u00e9 v\u00fdrob\u011b.<\/p>\n

        \"\"<\/p>\n

        Aplikace<\/h2>\n

        Elektrick\u00e1 vozidla<\/strong>
        Pou\u017e\u00edv\u00e1 se v trak\u010dn\u00edch m\u011bni\u010d\u00edch, palubn\u00edch nab\u00edje\u010dk\u00e1ch a m\u011bni\u010d\u00edch DC-DC. V\u011bt\u0161\u00ed velikost desti\u010dek podporuje hromadnou v\u00fdrobu vysoce \u00fa\u010dinn\u00fdch nap\u00e1jec\u00edch za\u0159\u00edzen\u00ed pro platformy elektromobil\u016f.<\/p>\n

        Syst\u00e9my obnoviteln\u00e9 energie<\/strong>
        Pou\u017e\u00edv\u00e1 se v sol\u00e1rn\u00edch st\u0159\u00edda\u010d\u00edch a m\u011bni\u010d\u00edch v\u011btrn\u00e9 energie, kde jsou \u00fa\u010dinnost a spolehlivost rozhoduj\u00edc\u00ed pro dlouhodob\u00fd provoz.<\/p>\n

        Pr\u016fmyslov\u00e1 v\u00fdkonov\u00e1 elektronika<\/strong>
        Podporuje motorov\u00e9 pohony, automatiza\u010dn\u00ed syst\u00e9my a v\u00fdkonn\u00e1 za\u0159\u00edzen\u00ed vy\u017eaduj\u00edc\u00ed stabiln\u00ed a \u00fa\u010dinnou p\u0159em\u011bnu energie.<\/p>\n

        5G a RF infrastruktura<\/strong>
        Umo\u017e\u0148uje pou\u017eit\u00ed vysokofrekven\u010dn\u00edch a vysoce v\u00fdkonn\u00fdch RF komponent\u016f pou\u017e\u00edvan\u00fdch v komunika\u010dn\u00edch syst\u00e9mech a z\u00e1kladnov\u00fdch stanic\u00edch.<\/p>\n

        Spot\u0159ebn\u00ed elektronika<\/strong>
        Pou\u017e\u00edv\u00e1 se v kompaktn\u00edch, vysoce \u00fa\u010dinn\u00fdch nap\u00e1jec\u00edch zdroj\u00edch a syst\u00e9mech rychl\u00e9ho nab\u00edjen\u00ed.<\/p>\n

        \u010cASTO KLADEN\u00c9 DOTAZY<\/h2>\n

        Ot\u00e1zka 1: Jak\u00e1 je hlavn\u00ed v\u00fdhoda 8palcov\u00fdch desti\u010dek SiC?
        V\u011bt\u0161\u00ed velikost desti\u010dky zvy\u0161uje po\u010det \u010dip\u016f na desti\u010dku, co\u017e v\u00fdrazn\u011b sni\u017euje v\u00fdrobn\u00ed n\u00e1klady na za\u0159\u00edzen\u00ed a zvy\u0161uje efektivitu v\u00fdroby.<\/p>\n

        Ot\u00e1zka 2: Je 8palcov\u00e1 technologie SiC vysp\u011bl\u00e1?
        V sou\u010dasn\u00e9 dob\u011b p\u0159ech\u00e1z\u00ed z pilotn\u00ed v\u00fdroby do ran\u00e9 f\u00e1ze hromadn\u00e9 v\u00fdroby a st\u00e1le v\u00edce se uplat\u0148uje v pokro\u010dil\u00e9 v\u00fdrob\u011b polovodi\u010d\u016f.<\/p>\n

        Ot\u00e1zka 3: Lze epitaxn\u00ed vrstvy p\u0159izp\u016fsobit?
        Ano, typ dopov\u00e1n\u00ed, tlou\u0161\u0165ku a elektrick\u00e9 vlastnosti lze p\u0159izp\u016fsobit konkr\u00e9tn\u00edm po\u017eadavk\u016fm na za\u0159\u00edzen\u00ed.<\/p>\n

        Ot\u00e1zka 4: Jsou st\u00e1vaj\u00edc\u00ed v\u00fdrobn\u00ed linky kompatibiln\u00ed s 8palcov\u00fdmi desti\u010dkami?
        Mo\u017en\u00e1 bude nutn\u00e9 modernizovat n\u011bkter\u00e9 za\u0159\u00edzen\u00ed, ale mnoho modern\u00edch tov\u00e1ren se ji\u017e p\u0159ipravuje na zpracov\u00e1n\u00ed 200mm SiC.<\/p>","protected":false},"excerpt":{"rendered":"

        8palcov\u00fd epitaxn\u00ed pl\u00e1tek SiC p\u0159edstavuje nejnov\u011bj\u0161\u00ed pokrok v technologii polovodi\u010d\u016f se \u0161irok\u00fdm p\u00e1smem. Tento produkt je postaven na 200mm substr\u00e1tu SiC s vysoce kvalitn\u00ed epitaxn\u00ed vrstvou a je navr\u017een tak, aby podporoval \u0161k\u00e1lovatelnou v\u00fdrobu vysoce \u00fa\u010dinn\u00fdch v\u00fdkonov\u00fdch za\u0159\u00edzen\u00ed.<\/p>","protected":false},"featured_media":2184,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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