{"id":2173,"date":"2026-04-14T03:08:56","date_gmt":"2026-04-14T03:08:56","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2173"},"modified":"2026-04-14T03:08:59","modified_gmt":"2026-04-14T03:08:59","slug":"4-inch-100mm-hpsi-silicon-carbide-wafer","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/cs\/product\/4-inch-100mm-hpsi-silicon-carbide-wafer\/","title":{"rendered":"4palcov\u00e1 100mm desti\u010dka z karbidu k\u0159em\u00edku HPSI"},"content":{"rendered":"

\"4palcov\u00e1\u010cty\u0159palcov\u00e1 desti\u010dka z karbidu k\u0159em\u00edku HPSI je vysoce \u010dist\u00fd poloizola\u010dn\u00ed substr\u00e1t ur\u010den\u00fd pro pokro\u010dil\u00e9 aplikace v oblasti r\u00e1diov\u00fdch a mikrovlnn\u00fdch technologi\u00ed a optoelektroniky. HPSI ozna\u010duje vysoce \u010dist\u00fd poloizola\u010dn\u00ed materi\u00e1l, kter\u00fd se vyzna\u010duje extr\u00e9mn\u011b vysok\u00fdm odporem a vynikaj\u00edc\u00ed elektrickou izolac\u00ed.<\/p>\n

Karbid k\u0159em\u00edku je polovodi\u010d se \u0161irok\u00fdm p\u00e1smem slo\u017een\u00fd z k\u0159em\u00edku a uhl\u00edku. Ve srovn\u00e1n\u00ed s b\u011b\u017en\u00fdmi k\u0159em\u00edkov\u00fdmi desti\u010dkami nab\u00edz\u00ed lep\u0161\u00ed tepelnou vodivost, vy\u0161\u0161\u00ed pr\u016frazn\u00e9 elektrick\u00e9 pole a lep\u0161\u00ed v\u00fdkon v extr\u00e9mn\u00edch provozn\u00edch podm\u00ednk\u00e1ch. V poloizola\u010dn\u00ed form\u011b SiC v\u00fdrazn\u011b sni\u017euje parazitn\u00ed veden\u00ed, co\u017e z n\u011bj \u010din\u00ed ide\u00e1ln\u00ed platformu pro vysokofrekven\u010dn\u00ed a v\u00fdkonn\u00e1 elektronick\u00e1 za\u0159\u00edzen\u00ed.<\/p>\n

Tento 4palcov\u00fd form\u00e1t desti\u010dek je \u0161iroce pou\u017e\u00edv\u00e1n jak ve v\u00fdzkumu, tak v pr\u016fmyslov\u00e9 v\u00fdrob\u011b d\u00edky sv\u00e9 rovnov\u00e1ze mezi cenou, vysp\u011blost\u00ed a kompatibilitou proces\u016f. Je vhodn\u00fd zejm\u00e9na pro RF za\u0159\u00edzen\u00ed, komunika\u010dn\u00ed syst\u00e9my 5G, radarov\u00e9 moduly a nov\u00e9 optick\u00e9 technologie, jako jsou nap\u0159\u00edklad AR vlnovodn\u00e9 komponenty.<\/p>\n

Specifikace<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Parametr<\/th>\nHodnota<\/th>\n<\/tr>\n<\/thead>\n
Pr\u016fm\u011br<\/td>\n100 \u00b1 0,5 mm<\/td>\n<\/tr>\n
Tlou\u0161\u0165ka<\/td>\n350 \u03bcm<\/td>\n<\/tr>\n
Materi\u00e1l<\/td>\nMonokrystal SiC<\/td>\n<\/tr>\n
Typ<\/td>\nHPSI (poloizola\u010dn\u00ed)<\/td>\n<\/tr>\n
Odolnost<\/td>\n\u22651E5 a\u017e \u22651E10 ohm-cm<\/td>\n<\/tr>\n
Drsnost povrchu<\/td>\nCMP Ra \u2264 0,2 nm<\/td>\n<\/tr>\n
TTV<\/td>\n\u2264 10 \u03bcm<\/td>\n<\/tr>\n
Warp<\/td>\n\u2264 30 \u03bcm<\/td>\n<\/tr>\n
Orientace<\/td>\nMo\u017enosti v ose nebo mimo osu<\/td>\n<\/tr>\n
Hrana<\/td>\nStandardn\u00ed zkosen\u00ed SEMI<\/td>\n<\/tr>\n
T\u0159\u00edda<\/td>\nV\u00fdroba \/ V\u00fdzkum \/ Figur\u00edna<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Tyto parametry zaji\u0161\u0165uj\u00ed vysokou kvalitu povrchu, n\u00edzkou hustotu defekt\u016f a stabiln\u00ed mechanick\u00e9 vlastnosti pot\u0159ebn\u00e9 pro epitaxn\u00ed r\u016fst a p\u0159esnou v\u00fdrobu za\u0159\u00edzen\u00ed.<\/p>\n

Charakteristika materi\u00e1lu\"\"<\/h2>\n

Karbid k\u0159em\u00edku je jedn\u00edm z nejd\u016fle\u017eit\u011bj\u0161\u00edch polovodi\u010dov\u00fdch materi\u00e1l\u016f t\u0159et\u00ed generace. Jeho \u0161irok\u00e1 p\u00e1smov\u00e1 propust umo\u017e\u0148uje za\u0159\u00edzen\u00edm pracovat p\u0159i vy\u0161\u0161\u00edch nap\u011bt\u00edch s ni\u017e\u0161\u00edmi svodov\u00fdmi proudy ve srovn\u00e1n\u00ed s k\u0159em\u00edkem.<\/p>\n

Pro desti\u010dky HPSI je charakteristick\u00e1 jejich extr\u00e9mn\u011b vysok\u00e1 rezistivita. Tato vlastnost minimalizuje ne\u017e\u00e1douc\u00ed tok proudu v substr\u00e1tu, co\u017e je rozhoduj\u00edc\u00ed pro zachov\u00e1n\u00ed integrity sign\u00e1lu v r\u00e1diov\u00fdch a mikrovlnn\u00fdch aplikac\u00edch.<\/p>\n

Tepeln\u00e1 vodivost je v\u00fdrazn\u011b vy\u0161\u0161\u00ed ne\u017e u tradi\u010dn\u00edch polovodi\u010dov\u00fdch materi\u00e1l\u016f, co\u017e umo\u017e\u0148uje \u00fa\u010dinn\u00fd odvod tepla p\u0159i provozu s vysok\u00fdm v\u00fdkonem. To sni\u017euje tepeln\u00e9 nam\u00e1h\u00e1n\u00ed a zvy\u0161uje dlouhodobou spolehlivost.<\/p>\n

SiC tak\u00e9 vykazuje vysok\u00e9 pr\u016frazn\u00e9 elektrick\u00e9 pole, co\u017e umo\u017e\u0148uje za\u0159\u00edzen\u00edm zpracov\u00e1vat vysok\u00e9 nap\u011bt\u00ed bez zv\u011bt\u0161ov\u00e1n\u00ed velikosti. Krom\u011b toho si tento materi\u00e1l zachov\u00e1v\u00e1 stabiln\u00ed v\u00fdkon p\u0159i vysok\u00fdch teplot\u00e1ch, vysok\u00fdch frekvenc\u00edch a vystaven\u00ed z\u00e1\u0159en\u00ed, tak\u017ee je vhodn\u00fd pro n\u00e1ro\u010dn\u00e1 prost\u0159ed\u00ed.<\/p>\n

Aplikace<\/h2>\n

RF a mikrovlnn\u00e1 za\u0159\u00edzen\u00ed<\/strong>
Desky z karbidu k\u0159em\u00edku HPSI se \u0161iroce pou\u017e\u00edvaj\u00ed jako substr\u00e1ty pro vysokofrekven\u010dn\u00ed zesilova\u010de a vysokofrekven\u010dn\u00ed obvody. Jejich vysok\u00fd odpor sni\u017euje parazitn\u00ed ztr\u00e1ty a zlep\u0161uje \u00fa\u010dinnost p\u0159enosu sign\u00e1lu, tak\u017ee jsou nezbytn\u00e9 pro pokro\u010dilou komunika\u010dn\u00ed elektroniku.<\/p>\n

Komunika\u010dn\u00ed infrastruktura 5G<\/strong>
V syst\u00e9mech 5G pracuj\u00ed za\u0159\u00edzen\u00ed na vy\u0161\u0161\u00edch frekvenc\u00edch a vy\u017eaduj\u00ed materi\u00e1ly s vynikaj\u00edc\u00ed elektrickou izolac\u00ed. Desky HPSI SiC podporuj\u00ed stabiln\u00ed v\u00fdkon v z\u00e1kladnov\u00fdch stanic\u00edch a bezdr\u00e1tov\u00fdch modulech, umo\u017e\u0148uj\u00ed vy\u0161\u0161\u00ed \u00fa\u010dinnost p\u0159enosu dat a sni\u017euj\u00ed energetick\u00e9 ztr\u00e1ty.<\/p>\n

Br\u00fdle AR a optick\u00e9 syst\u00e9my<\/strong>
V za\u0159\u00edzen\u00edch pro roz\u0161\u00ed\u0159enou realitu se SiC desti\u010dky pou\u017e\u00edvaj\u00ed v optick\u00fdch a vlnovodn\u00fdch sou\u010d\u00e1stk\u00e1ch. Jejich struktur\u00e1ln\u00ed stabilita a kompatibilita s p\u0159esn\u00fdmi technologiemi zpracov\u00e1n\u00ed podporuj\u00ed v\u00fdvoj kompaktn\u00edch a vysoce v\u00fdkonn\u00fdch optick\u00fdch syst\u00e9m\u016f.<\/p>\n

Radar a obrann\u00e9 syst\u00e9my<\/strong>
Substr\u00e1ty HPSI SiC jsou vhodn\u00e9 pro radarovou a obrannou elektroniku, kter\u00e1 vy\u017eaduje vysok\u00fd v\u00fdkon, vysokou frekvenci a spolehlivost. Zachov\u00e1vaj\u00ed stabiln\u00ed provoz v extr\u00e9mn\u00edch podm\u00ednk\u00e1ch prost\u0159ed\u00ed, v\u010detn\u011b vysok\u00e9 teploty a radiace.<\/p>\n

Optoelektronick\u00e1 za\u0159\u00edzen\u00ed<\/strong>
Tyto desti\u010dky se pou\u017e\u00edvaj\u00ed tak\u00e9 v optoelektronick\u00fdch a fotonick\u00fdch za\u0159\u00edzen\u00edch, kde jsou elektrick\u00e1 izolace a tepeln\u00fd v\u00fdkon rozhoduj\u00edc\u00ed pro \u00fa\u010dinnost a stabilitu za\u0159\u00edzen\u00ed.<\/p>\n

\"\"<\/p>\n

Dostupn\u00e9 t\u0159\u00eddy<\/h2>\n

V\u00fdrobn\u00ed t\u0159\u00edda
Pou\u017e\u00edv\u00e1 se pro v\u00fdrobu komer\u010dn\u00edch za\u0159\u00edzen\u00ed s p\u0159\u00edsnou kontrolou kvality a n\u00edzkou hustotou defekt\u016f.<\/p>\n

Stupe\u0148 v\u00fdzkumu
Vhodn\u00e9 pro laboratorn\u00ed v\u00fdvoj, testov\u00e1n\u00ed a optimalizaci proces\u016f.<\/p>\n

T\u0159\u00edda figur\u00edny
Pou\u017e\u00edv\u00e1 se p\u0159i kalibraci za\u0159\u00edzen\u00ed, testov\u00e1n\u00ed proces\u016f a nefunk\u010dn\u00edm pou\u017eit\u00ed.<\/p>\n

Srovn\u00e1n\u00ed Si vs SiC<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n
Majetek<\/th>\nK\u0159em\u00edk<\/th>\nKarbid k\u0159em\u00edku<\/th>\n<\/tr>\n<\/thead>\n
P\u00e1smov\u00e1 propust<\/td>\n1,12 eV<\/td>\n~3,26 eV<\/td>\n<\/tr>\n
Odolnost<\/td>\nN\u00edzk\u00e1<\/td>\nVelmi vysok\u00e1 (HPSI)<\/td>\n<\/tr>\n
Tepeln\u00e1 vodivost<\/td>\nM\u00edrn\u00e1<\/td>\nVysok\u00e1<\/td>\n<\/tr>\n
Frekven\u010dn\u00ed schopnost<\/td>\nOmezen\u00e9<\/td>\nVynikaj\u00edc\u00ed<\/td>\n<\/tr>\n
Zam\u011b\u0159en\u00ed aplikace<\/td>\nLogika a IC<\/td>\nRF a vysokofrekven\u010dn\u00ed<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

K\u0159em\u00edk je st\u00e1le dominantn\u00ed v b\u011b\u017en\u00e9 elektronice, zat\u00edmco karbid k\u0159em\u00edku se st\u00e1le v\u00edce pou\u017e\u00edv\u00e1 ve vysokofrekven\u010dn\u00edch a vysoce v\u00fdkonn\u00fdch syst\u00e9mech.<\/p>\n

\u010cASTO KLADEN\u00c9 DOTAZY<\/h2>\n

Ot\u00e1zka: Co je HPSI desti\u010dka z karbidu k\u0159em\u00edku?
Deska HPSI je vysoce \u010dist\u00fd poloizola\u010dn\u00ed substr\u00e1t z karbidu k\u0159em\u00edku s velmi vysok\u00fdm elektrick\u00fdm odporem, ur\u010den\u00fd pro RF, mikrovlnn\u00e9 a optoelektronick\u00e9 aplikace.<\/p>\n

Ot\u00e1zka: Pro\u010d je d\u016fle\u017eit\u00e1 vysok\u00e1 rezistivita?
Vysok\u00fd odpor sni\u017euje parazitn\u00ed veden\u00ed a ru\u0161en\u00ed sign\u00e1lu, co\u017e je rozhoduj\u00edc\u00ed pro zachov\u00e1n\u00ed \u00fa\u010dinnosti a integrity sign\u00e1lu ve vysokofrekven\u010dn\u00edch za\u0159\u00edzen\u00edch.<\/p>\n

Ot\u00e1zka: Je karbid k\u0159em\u00edku vhodn\u00fd pro optick\u00e9 aplikace?
Ano, karbid k\u0159em\u00edku lze pou\u017e\u00edt v n\u011bkter\u00fdch optick\u00fdch a fotonick\u00fdch aplikac\u00edch d\u00edky jeho tepeln\u00e9 stabilit\u011b a kompatibilit\u011b s pokro\u010dil\u00fdmi v\u00fdrobn\u00edmi procesy.<\/p>","protected":false},"excerpt":{"rendered":"

\u010cty\u0159palcov\u00e1 desti\u010dka z karbidu k\u0159em\u00edku HPSI je kl\u00ed\u010dov\u00fdm materi\u00e1lem pro vysokofrekven\u010dn\u00ed a elektronick\u00e9 syst\u00e9my nov\u00e9 generace. D\u00edky kombinaci vysok\u00e9ho odporu, tepeln\u00e9ho v\u00fdkonu a struktur\u00e1ln\u00ed stability je ide\u00e1ln\u00ed volbou pro vysokofrekven\u010dn\u00ed za\u0159\u00edzen\u00ed, komunika\u010dn\u00ed infrastrukturu a nov\u00e9 optick\u00e9 technologie. Vzhledem k tomu, \u017ee popt\u00e1vka po vysoce \u00fa\u010dinn\u00fdch a vysokofrekven\u010dn\u00edch syst\u00e9mech neust\u00e1le roste, substr\u00e1ty HPSI SiC nab\u00fdvaj\u00ed v pokro\u010dil\u00fdch polovodi\u010dov\u00fdch aplikac\u00edch st\u00e1le v\u011bt\u0161\u00edho v\u00fdznamu.<\/p>","protected":false},"featured_media":2174,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}}},"product_brand":[],"product_cat":[729],"product_tag":[930,938,936,937,940,941,942,939,927,692],"class_list":{"0":"post-2173","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-wafer","7":"product_tag-4-inch-sic-wafer","8":"product_tag-high-resistivity-sic","9":"product_tag-hpsi-silicon-carbide-wafer","10":"product_tag-semi-insulating-sic","11":"product_tag-sic-for-5g","12":"product_tag-sic-for-ar-glasses","13":"product_tag-sic-optical-substrate","14":"product_tag-sic-rf-substrate","15":"product_tag-silicon-carbide-wafer","16":"product_tag-wide-bandgap-semiconductor","17":"desktop-align-left","18":"tablet-align-left","19":"mobile-align-left","20":"ast-product-gallery-layout-horizontal-slider","21":"ast-product-tabs-layout-horizontal","23":"first","24":"instock","25":"shipping-taxable","26":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product\/2173","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/comments?post=2173"}],"version-history":[{"count":1,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product\/2173\/revisions"}],"predecessor-version":[{"id":2179,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product\/2173\/revisions\/2179"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/media\/2174"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/media?parent=2173"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product_brand?post=2173"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product_cat?post=2173"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/product_tag?post=2173"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}