{"id":2167,"date":"2026-04-14T02:28:42","date_gmt":"2026-04-14T02:28:42","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=2167"},"modified":"2026-04-14T02:28:45","modified_gmt":"2026-04-14T02:28:45","slug":"4-inch-4h-n-silicon-carbide-wafer","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/cs\/product\/4-inch-4h-n-silicon-carbide-wafer\/","title":{"rendered":"4palcov\u00e1 100mm desti\u010dka z karbidu k\u0159em\u00edku 4H-N"},"content":{"rendered":"

\"Karbid\u010cty\u0159palcov\u00e1 desti\u010dka z karbidu k\u0159em\u00edku 4H-N je vodiv\u00fd substr\u00e1t SiC ur\u010den\u00fd pro pokro\u010dil\u00e9 v\u00fdkonov\u00e9 polovodi\u010dov\u00e9 aplikace. Je zalo\u017een na krystalov\u00e9m polytypu 4H, kter\u00fd je v pr\u016fmyslu \u0161iroce uzn\u00e1v\u00e1n pro sv\u00e9 vynikaj\u00edc\u00ed elektrick\u00e9 a tepeln\u00e9 vlastnosti.<\/p>\n

Karbid k\u0159em\u00edku pat\u0159\u00ed mezi polovodi\u010dov\u00e9 materi\u00e1ly t\u0159et\u00ed generace a oproti tradi\u010dn\u00edmu k\u0159em\u00edku nab\u00edz\u00ed v\u00fdznamn\u00e9 v\u00fdhody. D\u00edky \u0161irok\u00e9mu p\u00e1sov\u00e9mu rozmez\u00ed, vysok\u00e9mu pr\u016frazn\u00e9mu elektrick\u00e9mu poli a vynikaj\u00edc\u00ed tepeln\u00e9 vodivosti je velmi vhodn\u00fd pro za\u0159\u00edzen\u00ed pracuj\u00edc\u00ed p\u0159i vysok\u00e9m nap\u011bt\u00ed, vysok\u00e9 frekvenci a vysok\u00e9 teplot\u011b.<\/p>\n

Tento pl\u00e1tek se b\u011b\u017en\u011b pou\u017e\u00edv\u00e1 k v\u00fdrob\u011b v\u00fdkonov\u00fdch za\u0159\u00edzen\u00ed, jako jsou MOSFETy, Schottkyho bari\u00e9rov\u00e9 diody, JFETy a IGBT. Tato za\u0159\u00edzen\u00ed jsou d\u016fle\u017eit\u00fdmi sou\u010d\u00e1stmi v modern\u00edch energetick\u00fdch syst\u00e9mech, kde je d\u016fle\u017eit\u00e1 \u00fa\u010dinnost, spolehlivost a kompaktn\u00ed design. \u010cty\u0159palcov\u00fd form\u00e1t poskytuje rovnov\u00e1hu mezi n\u00e1kladovou efektivitou a v\u00fdt\u011b\u017enost\u00ed za\u0159\u00edzen\u00ed, d\u00edky \u010demu\u017e se \u0161iroce uplat\u0148uje jak ve v\u00fdzkumu, tak v pr\u016fmyslov\u00e9 v\u00fdrob\u011b.<\/p>\n

Specifikace<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Parametr<\/th>\nHodnota<\/th>\n<\/tr>\n<\/thead>\n
Pr\u016fm\u011br<\/td>\n100 \u00b1 0,5 mm<\/td>\n<\/tr>\n
Tlou\u0161\u0165ka<\/td>\n350 \u00b1 25 \u03bcm<\/td>\n<\/tr>\n
Polytyp<\/td>\n4H<\/td>\n<\/tr>\n
Typ vodivosti<\/td>\nN-typ<\/td>\n<\/tr>\n
Drsnost povrchu<\/td>\nRa \u2264 0,2 nm<\/td>\n<\/tr>\n
TTV<\/td>\n\u2264 10 \u03bcm<\/td>\n<\/tr>\n
Warp<\/td>\n\u2264 30 \u03bcm<\/td>\n<\/tr>\n
Hustota defekt\u016f<\/td>\nMPD < 1 ea\/cm\u00b2<\/td>\n<\/tr>\n
Hrana<\/td>\n45\u00b0 \u00fakos, standard SEMI<\/td>\n<\/tr>\n
T\u0159\u00edda<\/td>\nV\u00fdroba \/ V\u00fdzkum \/ Figur\u00edna<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Tyto parametry zaji\u0161\u0165uj\u00ed vysokou kvalitu povrchu a rozm\u011brovou stabilitu, kter\u00e9 jsou nezbytn\u00e9 pro epitaxn\u00ed r\u016fst a v\u00fdrobu za\u0159\u00edzen\u00ed.<\/p>\n

Charakteristika materi\u00e1lu<\/h2>\n

Karbid k\u0159em\u00edku vykazuje \u0161irokou p\u00e1smovou mezeru p\u0159ibli\u017en\u011b 3,26 eV, co\u017e umo\u017e\u0148uje za\u0159\u00edzen\u00edm pracovat p\u0159i v\u00fdrazn\u011b vy\u0161\u0161\u00edch nap\u011bt\u00edch ve srovn\u00e1n\u00ed s k\u0159em\u00edkem. To m\u00e1 za n\u00e1sledek lep\u0161\u00ed schopnost zpracov\u00e1vat v\u00fdkon a sn\u00ed\u017een\u00ed ztr\u00e1t p\u0159i veden\u00ed.\"\"<\/p>\n

Dal\u0161\u00ed d\u016fle\u017eitou vlastnost\u00ed je vysok\u00e9 pr\u016frazn\u00e9 elektrick\u00e9 pole, kter\u00e9 m\u016f\u017ee b\u00fdt t\u00e9m\u011b\u0159 desetkr\u00e1t v\u011bt\u0161\u00ed ne\u017e u k\u0159em\u00edku. To umo\u017e\u0148uje ten\u010d\u00ed struktury za\u0159\u00edzen\u00ed a vy\u0161\u0161\u00ed \u00fa\u010dinnost v syst\u00e9mech pro p\u0159em\u011bnu energie.<\/p>\n

Kl\u00ed\u010dovou v\u00fdhodou je tak\u00e9 tepeln\u00e1 vodivost. SiC vede teplo p\u0159ibli\u017en\u011b t\u0159ikr\u00e1t \u00fa\u010dinn\u011bji ne\u017e k\u0159em\u00edk, co\u017e umo\u017e\u0148uje za\u0159\u00edzen\u00edm udr\u017eet stabiln\u00ed v\u00fdkon p\u0159i vysok\u00e9m zat\u00ed\u017een\u00ed. To sni\u017euje pot\u0159ebu slo\u017eit\u00fdch chladic\u00edch syst\u00e9m\u016f a zvy\u0161uje celkovou spolehlivost syst\u00e9mu.<\/p>\n

Krom\u011b toho si karbid k\u0159em\u00edku zachov\u00e1v\u00e1 stabiln\u00ed elektrick\u00e9 vlastnosti p\u0159i teplot\u00e1ch vy\u0161\u0161\u00edch ne\u017e 600 \u00b0C. D\u00edky tomu je obzvl\u00e1\u0161t\u011b vhodn\u00fd pro aplikace v n\u00e1ro\u010dn\u00fdch podm\u00ednk\u00e1ch, jako jsou automobilov\u00e9 nap\u00e1jec\u00ed syst\u00e9my, pr\u016fmyslov\u00e9 pohony a leteck\u00e1 elektronika.<\/p>\n

Materi\u00e1l tak\u00e9 nab\u00edz\u00ed vysokou pohyblivost elektron\u016f a n\u00edzk\u00fd zap\u00ednac\u00ed odpor, co\u017e p\u0159isp\u00edv\u00e1 k vy\u0161\u0161\u00ed rychlosti sp\u00edn\u00e1n\u00ed a sn\u00ed\u017een\u00ed energetick\u00fdch ztr\u00e1t ve v\u00fdkonov\u00fdch za\u0159\u00edzen\u00edch.<\/p>\n

Dostupn\u00e9 velikosti oplatek<\/h2>\n

Karbid k\u0159em\u00edku je k dispozici v r\u016fzn\u00fdch pr\u016fm\u011brech, kter\u00e9 vyhovuj\u00ed r\u016fzn\u00fdm aplika\u010dn\u00edm pot\u0159eb\u00e1m:<\/p>\n

\n
\n\n\n\n\n\n\n\n\n\n
Velikost<\/th>\nPr\u016fm\u011br<\/th>\nRozsah tlou\u0161\u0165ky<\/th>\n<\/tr>\n<\/thead>\n
2 palce<\/td>\n50,8 mm<\/td>\n330-350 \u03bcm<\/td>\n<\/tr>\n
3 palce<\/td>\n76,2 mm<\/td>\n350-500 \u03bcm<\/td>\n<\/tr>\n
4 palce<\/td>\n100 mm<\/td>\n350-500 \u03bcm<\/td>\n<\/tr>\n
6 palc\u016f<\/td>\n150 mm<\/td>\n350-500 \u03bcm<\/td>\n<\/tr>\n
8 palc\u016f<\/td>\n200 mm<\/td>\n350-500 \u03bcm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Mezi b\u011b\u017en\u00e9 typy pat\u0159\u00ed vodiv\u00e9 4H-N, poloizola\u010dn\u00ed HPSI a dal\u0161\u00ed specializovan\u00e9 varianty pro RF a v\u00fdkonov\u00e9 aplikace.<\/p>\n

Aplikace<\/h2>\n

V elektrick\u00fdch vozidlech se SiC desti\u010dky pou\u017e\u00edvaj\u00ed v trak\u010dn\u00edch m\u011bni\u010d\u00edch, palubn\u00edch nab\u00edje\u010dk\u00e1ch a DC-DC m\u011bni\u010d\u00edch. Zlep\u0161uj\u00ed energetickou \u00fa\u010dinnost, sni\u017euj\u00ed produkci tepla a umo\u017e\u0148uj\u00ed kompaktn\u011bj\u0161\u00ed konstrukce syst\u00e9m\u016f.\"\"<\/p>\n

V syst\u00e9mech obnoviteln\u00fdch zdroj\u016f energie se SiC za\u0159\u00edzen\u00ed pou\u017e\u00edvaj\u00ed v sol\u00e1rn\u00edch st\u0159\u00edda\u010d\u00edch a m\u011bni\u010d\u00edch v\u011btrn\u00e9 energie. Jejich vysok\u00e1 \u00fa\u010dinnost p\u0159isp\u00edv\u00e1 ke sn\u00ed\u017een\u00ed energetick\u00fdch ztr\u00e1t a zlep\u0161en\u00ed v\u00fdkonu syst\u00e9mu.<\/p>\n

Technologie SiC je v\u00fdhodn\u00e1 i pro pr\u016fmyslov\u00e9 syst\u00e9my, zejm\u00e9na pro pohony motor\u016f s vysok\u00fdm v\u00fdkonem a automatiza\u010dn\u00ed za\u0159\u00edzen\u00ed, kde je rozhoduj\u00edc\u00ed spolehlivost a odolnost.<\/p>\n

V infrastruktu\u0159e rozvodn\u00fdch s\u00edt\u00ed se karbid k\u0159em\u00edku pou\u017e\u00edv\u00e1 v inteligentn\u00edch rozvodn\u00fdch s\u00edt\u00edch a vysokonap\u011b\u0165ov\u00fdch p\u0159enosov\u00fdch za\u0159\u00edzen\u00edch ke zv\u00fd\u0161en\u00ed \u00fa\u010dinnosti p\u0159em\u011bny energie a sn\u00ed\u017een\u00ed syst\u00e9mov\u00fdch ztr\u00e1t.<\/p>\n

V letectv\u00ed a obran\u011b se SiC pou\u017e\u00edv\u00e1 pro vysoce spolehlivou elektroniku, kter\u00e1 mus\u00ed pracovat v extr\u00e9mn\u00edch teplotn\u00edch a environment\u00e1ln\u00edch podm\u00ednk\u00e1ch.<\/p>\n

Srovn\u00e1n\u00ed Si vs SiC<\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n
Majetek<\/th>\nK\u0159em\u00edk<\/th>\nKarbid k\u0159em\u00edku<\/th>\n<\/tr>\n<\/thead>\n
P\u00e1smov\u00e1 propust<\/td>\n1,12 eV<\/td>\n3,26 eV<\/td>\n<\/tr>\n
Pole rozd\u011blen\u00ed<\/td>\nN\u00edzk\u00e1<\/td>\nVysok\u00e1<\/td>\n<\/tr>\n
Tepeln\u00e1 vodivost<\/td>\nM\u00edrn\u00e1<\/td>\nVysok\u00e1<\/td>\n<\/tr>\n
Maxim\u00e1ln\u00ed teplota<\/td>\n~150\u00b0C<\/td>\n>600\u00b0C<\/td>\n<\/tr>\n
\u00da\u010dinnost<\/td>\nStandardn\u00ed<\/td>\nVysok\u00e1<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

K\u0159em\u00edk je i nad\u00e1le vhodn\u00fd pro n\u00edzkov\u00fdkonnou a b\u011b\u017enou elektroniku, zat\u00edmco karbid k\u0159em\u00edku je st\u00e1le v\u00edce preferov\u00e1n pro vysoce v\u00fdkonn\u00e9 a vysoce \u00fa\u010dinn\u00e9 syst\u00e9my.<\/p>\n

\u010cASTO KLADEN\u00c9 DOTAZY<\/h2>\n

Ot\u00e1zka: Jak\u00fd je rozd\u00edl mezi k\u0159em\u00edkov\u00fdmi a karbidk\u0159em\u00edkov\u00fdmi desti\u010dkami?<\/strong>
K\u0159em\u00edkov\u00e9 desti\u010dky se \u0161iroce pou\u017e\u00edvaj\u00ed v integrovan\u00fdch obvodech a standardn\u00edch elektronick\u00fdch za\u0159\u00edzen\u00edch. Karbid k\u0159em\u00edku je ur\u010den pro v\u00fdkonovou elektroniku, kde se vy\u017eaduje vysok\u00e9 nap\u011bt\u00ed, vysok\u00e1 teplota a vysok\u00e1 \u00fa\u010dinnost.<\/p>\n

Ot\u00e1zka: Jak si SiC vede ve srovn\u00e1n\u00ed s GaN?<\/strong>
SiC se obvykle pou\u017e\u00edv\u00e1 ve vysokonap\u011b\u0165ov\u00fdch a vysoce v\u00fdkonn\u00fdch aplikac\u00edch, jako jsou elektrick\u00e1 vozidla a rozvodn\u00e9 s\u00edt\u011b. GaN je vhodn\u011bj\u0161\u00ed pro vysokofrekven\u010dn\u00ed a n\u00edzkonap\u011b\u0165ov\u00e9 aplikace, v\u010detn\u011b vysokofrekven\u010dn\u00edch syst\u00e9m\u016f a rychlonab\u00edjec\u00edch za\u0159\u00edzen\u00ed.<\/p>\n

Ot\u00e1zka: Je karbid k\u0159em\u00edku keramika nebo polovodi\u010d?<\/strong>
Karbid k\u0159em\u00edku je keramika i polovodi\u010d. Kombinuje vysokou mechanickou pevnost s vynikaj\u00edc\u00edmi elektrick\u00fdmi vlastnostmi, tak\u017ee je vhodn\u00fd pro n\u00e1ro\u010dn\u00e9 elektronick\u00e9 aplikace.<\/p>\n

","protected":false},"excerpt":{"rendered":"

\u010cty\u0159palcov\u00e1 desti\u010dka z karbidu k\u0159em\u00edku 4H-N je kl\u00ed\u010dov\u00fdm materi\u00e1lem pro modern\u00ed v\u00fdkonovou elektroniku. D\u00edky kombinaci elektrick\u00e9 \u00fa\u010dinnosti, tepeln\u00e9ho v\u00fdkonu a spolehlivosti je z\u00e1kladn\u00edm substr\u00e1tem pro za\u0159\u00edzen\u00ed nov\u00e9 generace. Vzhledem k tomu, \u017ee pr\u016fmyslov\u00e1 odv\u011btv\u00ed st\u00e1le vy\u017eaduj\u00ed vy\u0161\u0161\u00ed energetickou \u00fa\u010dinnost a v\u00fdkonnost syst\u00e9m\u016f, nab\u00fdvaj\u00ed SiC desti\u010dky st\u00e1le v\u011bt\u0161\u00edho v\u00fdznamu v komer\u010dn\u00edch i pr\u016fmyslov\u00fdch aplikac\u00edch.<\/p>","protected":false},"featured_media":2168,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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