{"id":1981,"date":"2026-03-23T06:13:43","date_gmt":"2026-03-23T06:13:43","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=1981"},"modified":"2026-03-23T06:18:04","modified_gmt":"2026-03-23T06:18:04","slug":"sic-raw-material-synthesis-furnace","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/cs\/product\/sic-raw-material-synthesis-furnace\/","title":{"rendered":"50 kg SiC Suroviny Synt\u00e9za pece vysoce \u010dist\u00e9ho karbidu k\u0159em\u00edku P\u0159\u00edprava krystal\u016f"},"content":{"rendered":"

\"\"50kg pec na synt\u00e9zu SiC surovin je specializovan\u00e1 vysokoteplotn\u00ed pec ur\u010den\u00e1 k v\u00fdrob\u011b surovin z karbidu k\u0159em\u00edku (SiC) vysok\u00e9 \u010distoty. Jako kritick\u00fd polovodi\u010dov\u00fd a keramick\u00fd materi\u00e1l se SiC \u0161iroce uplat\u0148uje v pr\u016fmyslu.n v\u00fdkonov\u00e9 elektroniky, vysokoteplotn\u00edch za\u0159\u00edzen\u00ed, materi\u00e1l\u016f odoln\u00fdch proti opot\u0159eben\u00ed a optick\u00fdch sou\u010d\u00e1stek.<\/span><\/p>\n

Tato pec p\u0159em\u011b\u0148uje vstupn\u00ed suroviny k\u0159em\u00edku (Si) a uhl\u00edku (C) na SiC \u0159\u00edzenou vysokoteplotn\u00ed chemickou reakc\u00ed, co\u017e z n\u00ed \u010din\u00ed z\u00e1kladn\u00ed sou\u010d\u00e1st v\u00fdrobn\u00edho \u0159et\u011bzce karbidu k\u0159em\u00edku. Jej\u00ed konstrukce zaji\u0161\u0165uje vysokou \u010distotu, stabiln\u00ed provoz a st\u00e1l\u00fd v\u00fdkon, co\u017e v\u00fdrobc\u016fm umo\u017e\u0148uje splnit p\u0159\u00edsn\u00e9 po\u017eadavky na pokro\u010dil\u00e9 polovodi\u010de a vysoce v\u00fdkonn\u00e9 keramick\u00e9 aplikace.<\/p>\n

Hlavn\u00ed v\u00fdhody<\/strong><\/span><\/h2>\n
    \n
  • Kapacita p\u0159i vysok\u00fdch teplot\u00e1ch:<\/strong> Poskytuje teplotu pece a\u017e 2400 \u00b0C, co\u017e je vhodn\u00e9 pro \u00fa\u010dinnou synt\u00e9zu SiC.<\/li>\n
  • V\u00fdstup s vysokou \u010distotou:<\/strong> Vyu\u017e\u00edv\u00e1 vysoce \u010dist\u00e9 suroviny a \u0159\u00edzen\u00ed inertn\u00ed atmosf\u00e9ry k v\u00fdrob\u011b ultra\u010dist\u00e9ho SiC.<\/li>\n
  • Stabiln\u00ed v\u00fdkon:<\/strong> Robustn\u00ed konstrukce zaji\u0161\u0165uje spolehliv\u00fd provoz pro dlouhodobou nep\u0159etr\u017eitou v\u00fdrobu.<\/li>\n
  • N\u00edzk\u00e1 kontaminace:<\/strong> Inertn\u00ed atmosf\u00e9ra a \u010dist\u00e9 materi\u00e1ly minimalizuj\u00ed obsah ne\u010distot.<\/li>\n
  • Velk\u00e1 nosnost:<\/strong> Podporuje a\u017e 50 kg surovin, co\u017e zvy\u0161uje produktivitu a kompatibilitu s v\u00edce krystalov\u00fdmi pecemi.<\/li>\n
  • P\u0159esn\u00e9 \u0159\u00edzen\u00ed:<\/strong> Pokro\u010dil\u00e1 regulace teploty a tlaku s voliteln\u00fdm du\u00e1ln\u00edm m\u011b\u0159en\u00edm teploty a infra\u010derven\u00fdm monitorov\u00e1n\u00edm pro optimalizaci procesu.<\/li>\n
  • Flexibiln\u00ed konfigurace:<\/strong> Modul\u00e1rn\u00ed konstrukce umo\u017e\u0148uje instalaci vedle sebe, \u010d\u00edm\u017e se \u0161et\u0159\u00ed m\u00edsto a optimalizuje vyu\u017eit\u00ed za\u0159\u00edzen\u00ed.<\/li>\n<\/ul>\n

    Technick\u00e9 specifikace<\/strong><\/span><\/h2>\n
    \n
    \n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
    Funkce<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
    Rozm\u011bry (D \u00d7 \u0160 \u00d7 V)<\/td>\n4000 \u00d7 3400 \u00d7 4300 mm (p\u0159izp\u016fsobiteln\u00e9)<\/td>\n<\/tr>\n
    Pr\u016fm\u011br komory pece<\/td>\n1100 mm<\/td>\n<\/tr>\n
    Nosnost<\/td>\n50 kg<\/td>\n<\/tr>\n
    Kone\u010dn\u00e9 vys\u00e1v\u00e1n\u00ed<\/td>\n10-\u00b2 Pa (2 hodiny po spu\u0161t\u011bn\u00ed molekul\u00e1rn\u00edho \u010derpadla)<\/td>\n<\/tr>\n
    Rychlost n\u00e1r\u016fstu tlaku v komo\u0159e<\/td>\n\u226410 Pa\/h (po kalcinaci)<\/td>\n<\/tr>\n
    Spodn\u00ed tah krytu pece<\/td>\n1500 mm<\/td>\n<\/tr>\n
    Zp\u016fsob vyt\u00e1p\u011bn\u00ed<\/td>\nInduk\u010dn\u00ed oh\u0159ev<\/td>\n<\/tr>\n
    Maxim\u00e1ln\u00ed teplota<\/td>\n2400\u00b0C<\/td>\n<\/tr>\n
    Nap\u00e1jen\u00ed topen\u00ed<\/td>\n2\u00d740 kW<\/td>\n<\/tr>\n
    M\u011b\u0159en\u00ed teploty<\/td>\nDvoubarevn\u00fd infra\u010derven\u00fd teplom\u011br<\/td>\n<\/tr>\n
    Teplotn\u00ed rozsah<\/td>\n900-3000\u00b0C<\/td>\n<\/tr>\n
    P\u0159esnost regulace teploty<\/td>\n\u00b11\u00b0C<\/td>\n<\/tr>\n
    Rozsah regulace tlaku<\/td>\n1-700 mbar<\/td>\n<\/tr>\n
    P\u0159esnost regulace tlaku<\/td>\n1-5 mbar (v z\u00e1vislosti na rozsahu)<\/td>\n<\/tr>\n
    Zp\u016fsob nakl\u00e1d\u00e1n\u00ed<\/td>\nNi\u017e\u0161\u00ed nakl\u00e1dka; voliteln\u00fd vykl\u00e1dac\u00ed vysokozdvi\u017en\u00fd voz\u00edk a dv\u011b teplotn\u00ed m\u00edsta<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

    V\u00fdhody designu<\/strong><\/span><\/h2>\n
      \n
    1. Vysokokapacitn\u00ed zakl\u00e1d\u00e1n\u00ed umo\u017e\u0148uje, aby jedna pec z\u00e1sobovala v\u00edce pec\u00ed na dlouh\u00e9 krystaly, co\u017e zvy\u0161uje efektivitu v\u00fdroby.<\/li>\n
    2. Dvojit\u00e9 nap\u00e1jen\u00ed se stejnou frekvenc\u00ed zaji\u0161\u0165uje p\u0159esn\u00e9 \u0159\u00edzen\u00ed axi\u00e1ln\u00edho teplotn\u00edho gradientu.<\/li>\n
    3. Infra\u010derven\u00e9 m\u011b\u0159en\u00ed teploty v horn\u00ed a doln\u00ed \u010d\u00e1sti usnad\u0148uje sledov\u00e1n\u00ed teploty v re\u00e1ln\u00e9m \u010dase a lad\u011bn\u00ed procesu.<\/li>\n
    4. Vysok\u00e1 p\u0159esnost \u0159\u00edzen\u00ed vakua, tlaku a teploty zaji\u0161\u0165uje synt\u00e9zu velmi \u010dist\u00fdch surovin SiC.<\/li>\n
    5. Bezpe\u010dn\u00fd a spolehliv\u00fd syst\u00e9m nakl\u00e1dky\/vykl\u00e1dky, voliteln\u011b vybaven\u00fd vykl\u00e1dac\u00edm vysokozdvi\u017en\u00fdm voz\u00edkem.<\/li>\n
    6. Vysoce p\u0159esn\u00e9 \u0161oup\u00e1tka a regul\u00e1tory hmotnostn\u00edho pr\u016ftoku udr\u017euj\u00ed stabiln\u00ed procesn\u00ed atmosf\u00e9ru.<\/li>\n
    7. Modul\u00e1rn\u00ed konstrukce umo\u017e\u0148uje uspo\u0159\u00e1d\u00e1n\u00ed vedle sebe, \u010d\u00edm\u017e se optimalizuje podlahov\u00e1 plocha a vyu\u017eit\u00ed za\u0159\u00edzen\u00ed.<\/li>\n<\/ol>\n

      \"\"<\/p>\n

      Aplikace a v\u00fdhody<\/strong><\/span><\/h2>\n

      Pec na synt\u00e9zu surovin SiC \u00fa\u010dinn\u011b vyr\u00e1b\u00ed karbid k\u0159em\u00edku vysok\u00e9 \u010distoty, p\u0159i\u010dem\u017e dosahuje \u010distoty 99,999% nebo vy\u0161\u0161\u00ed. Syntetizovan\u00e1 surovina SiC je ide\u00e1ln\u00ed pro:<\/p>\n

        \n
      • R\u016fst monokrystalu:<\/strong> V\u00fdroba vysoce kvalitn\u00edch krystal\u016f SiC pro v\u00fdkonov\u00e1 za\u0159\u00edzen\u00ed, jako jsou MOSFETy a diody.<\/li>\n
      • V\u00fdkonov\u00e1 elektronika:<\/strong> Umo\u017e\u0148uje za\u0159\u00edzen\u00ed s vysok\u00fdm nap\u011bt\u00edm, n\u00edzk\u00fdmi ztr\u00e1tami a vysokofrekven\u010dn\u00edm v\u00fdkonem.<\/li>\n
      • Automobilov\u00fd pr\u016fmysl a obnoviteln\u00e9 zdroje energie:<\/strong> Vylep\u0161en\u00ed elektrick\u00fdch vozidel, sol\u00e1rn\u00edch st\u0159\u00edda\u010d\u016f a dal\u0161\u00edch vysoce v\u00fdkonn\u00fdch aplikac\u00ed.<\/li>\n
      • Pokro\u010dil\u00e1 keramika a optick\u00e1 za\u0159\u00edzen\u00ed:<\/strong> Roz\u0161\u00ed\u0159en\u00ed aplikac\u00ed SiC mimo polovodi\u010de i na pr\u016fmyslovou keramiku a optick\u00e9 sou\u010d\u00e1stky.<\/li>\n<\/ul>\n

        Slu\u017eby ZMSH<\/strong><\/span><\/h2>\n

        Spole\u010dnost ZMSH poskytuje kompletn\u00ed procesn\u00ed podporu od n\u00e1vrhu a v\u00fdroby pece a\u017e po poprodejn\u00ed servis. To zahrnuje p\u0159izp\u016fsoben\u00ed za\u0159\u00edzen\u00ed, optimalizaci proces\u016f a technick\u00e9 \u0161kolen\u00ed. D\u00edky pokro\u010dil\u00e9 technologii a rozs\u00e1hl\u00fdm zku\u0161enostem v oboru zaji\u0161\u0165uje spole\u010dnost ZMSH vysoce \u00fa\u010dinn\u00fd a stabiln\u00ed provoz s n\u00edzkou spot\u0159ebou energie a nab\u00edz\u00ed rychlou nep\u0159etr\u017eitou technickou podporu, kter\u00e1 z\u00e1kazn\u00edk\u016fm pom\u00e1h\u00e1 dos\u00e1hnout rozs\u00e1hl\u00e9 v\u00fdroby surovin karbidu k\u0159em\u00edku vysok\u00e9 \u010distoty.<\/p>\n

        \u010casto kladen\u00e9 ot\u00e1zky (FAQ)<\/strong><\/span><\/h2>\n

        Ot\u00e1zka 1: K \u010demu slou\u017e\u00ed pec na synt\u00e9zu surovin SiC?<\/strong>
        Odpov\u011b\u010f: Pou\u017e\u00edv\u00e1 se k v\u00fdrob\u011b vysoce \u010dist\u00fdch surovin karbidu k\u0159em\u00edku (SiC) vysokoteplotn\u00edmi chemick\u00fdmi reakcemi, kter\u00e9 jsou nezbytn\u00e9 pro v\u00fdrobu polovodi\u010d\u016f, keramiky a optick\u00fdch sou\u010d\u00e1stek.<\/p>\n

        Ot\u00e1zka 2: Pro\u010d je pro v\u00fdrobu polovodi\u010d\u016f d\u016fle\u017eit\u00e1 synt\u00e9zn\u00ed pec na SiC?<\/strong>
        Odpov\u011b\u010f: Umo\u017e\u0148uje v\u00fdrobu ultra\u010dist\u00e9ho SiC, kter\u00fd je kl\u00ed\u010dov\u00fd pro p\u011bstov\u00e1n\u00ed vysoce kvalitn\u00edch krystal\u016f SiC pou\u017e\u00edvan\u00fdch ve v\u00fdkonov\u00e9 elektronice a vysokofrekven\u010dn\u00edch za\u0159\u00edzen\u00edch.<\/p>\n

        Ot\u00e1zka 3: Jak\u00e1 je maxim\u00e1ln\u00ed nosnost pece?<\/strong>
        Odpov\u011b\u010f: Standardn\u00ed nosnost je 50 kg, co\u017e umo\u017e\u0148uje velkov\u00fdrobu a nap\u00e1jen\u00ed v\u00edce krystalov\u00fdch pec\u00ed.<\/p>\n

        Ot\u00e1zka 4: Jak\u00e9 jsou p\u0159esnosti regulace teploty a tlaku v peci?<\/strong>
        A: P\u0159esnost regulace teploty je \u00b11 \u00b0C. P\u0159esnost regulace tlaku se pohybuje od \u00b10,1 mbar do \u00b10,5 mbar v z\u00e1vislosti na rozsahu tlaku, co\u017e zaji\u0161\u0165uje stabiln\u00ed synt\u00e9zu SiC s vysokou \u010distotou.<\/p>","protected":false},"excerpt":{"rendered":"

        50kg pec na synt\u00e9zu SiC surovin je specializovan\u00e1 vysokoteplotn\u00ed pec ur\u010den\u00e1 k v\u00fdrob\u011b surovin z karbidu k\u0159em\u00edku (SiC) vysok\u00e9 \u010distoty. Jako kritick\u00fd polovodi\u010dov\u00fd a keramick\u00fd materi\u00e1l se SiC \u0161iroce uplat\u0148uje ve v\u00fdkonov\u00e9 elektronice, vysokoteplotn\u00edch za\u0159\u00edzen\u00edch, materi\u00e1lech odoln\u00fdch proti opot\u0159eben\u00ed a optick\u00fdch sou\u010d\u00e1stk\u00e1ch.<\/p>","protected":false},"featured_media":1984,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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