{"id":1968,"date":"2026-03-23T06:01:20","date_gmt":"2026-03-23T06:01:20","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?post_type=product&p=1968"},"modified":"2026-03-23T06:03:52","modified_gmt":"2026-03-23T06:03:52","slug":"lpcvd-oxidation-furnace","status":"publish","type":"product","link":"https:\/\/www.zmsh-semitech.com\/cs\/product\/lpcvd-oxidation-furnace\/","title":{"rendered":"6\/8\/12palcov\u00e1 oxida\u010dn\u00ed pec LPCVD s vysokou rovnom\u011brnost\u00ed nan\u00e1\u0161en\u00ed tenk\u00fdch vrstev pro pokro\u010dilou v\u00fdrobu polovodi\u010d\u016f"},"content":{"rendered":"

Oxida\u010dn\u00ed pec LPCVD 6\/8\/12 palc\u016f je nejmodern\u011bj\u0161\u00ed n\u00e1stroj pro v\u00fdrobu polovodi\u010d\u016f ur\u010den\u00fd pro p\u0159esn\u00e9 a rovnom\u011brn\u00e9 nan\u00e1\u0161en\u00ed tenk\u00fdch vrstev. M\u00e1 \u0161irok\u00e9 uplatn\u011bn\u00ed p\u0159i p\u011bstov\u00e1n\u00ed vysoce kvalitn\u00edch vrstev polyk\u0159em\u00edku, nitridu k\u0159em\u00edku a oxidu k\u0159em\u00edku na desti\u010dk\u00e1ch a zaji\u0161\u0165uje konzistentn\u00ed v\u00fdkon pro v\u00fdkonov\u00e9 polovodi\u010de, pokro\u010dil\u00e9 substr\u00e1ty a dal\u0161\u00ed vysoce p\u0159esn\u00e9 aplikace.<\/p>\n

Toto za\u0159\u00edzen\u00ed kombinuje pokro\u010dilou technologii n\u00edzkotlak\u00e9ho nan\u00e1\u0161en\u00ed, inteligentn\u00ed \u0159\u00edzen\u00ed teploty a velmi \u010dist\u00fd procesn\u00ed design, aby bylo dosa\u017eeno v\u00fdjime\u010dn\u00e9 rovnom\u011brnosti tenk\u00fdch vrstev a vysok\u00e9 v\u00fdkonnosti. Jeho vertik\u00e1ln\u00ed konfigurace reaktoru umo\u017e\u0148uje efektivn\u00ed d\u00e1vkov\u00e9 zpracov\u00e1n\u00ed, zat\u00edmco proces tepeln\u00e9ho nan\u00e1\u0161en\u00ed zabra\u0148uje po\u0161kozen\u00ed zp\u016fsoben\u00e9mu plazmatem, tak\u017ee je ide\u00e1ln\u00ed pro kritick\u00e9 procesy, jako je tvorba dielektrika hradla, tlumic\u00edch vrstev a ochrann\u00fdch oxid\u016f.<\/p>\n

\"\"<\/p>\n

\n

Hlavn\u00ed v\u00fdhody<\/strong><\/span><\/h2>\n
    \n
  • Vysoce rovnom\u011brn\u00e9 nan\u00e1\u0161en\u00ed tenk\u00fdch vrstev:<\/strong> N\u00edzkotlak\u00e9 prost\u0159ed\u00ed (0,1-10 Torr) zaji\u0161\u0165uje homogenitu mezi jednotliv\u00fdmi desti\u010dkami a uvnit\u0159 desti\u010dky \u00b11,5%, co\u017e je kritick\u00e9 pro v\u00fdrobu vysoce v\u00fdkonn\u00fdch za\u0159\u00edzen\u00ed.<\/li>\n
  • Vertik\u00e1ln\u00ed konstrukce reaktoru:<\/strong> Zpracov\u00e1v\u00e1 150-200 desti\u010dek na d\u00e1vku, \u010d\u00edm\u017e zvy\u0161uje propustnost a efektivitu v\u00fdroby pro pr\u016fmyslovou v\u00fdrobu polovodi\u010d\u016f.<\/li>\n
  • Proces tepeln\u00e9ho nan\u00e1\u0161en\u00ed (500-900 \u00b0C):<\/strong> Zaji\u0161\u0165uje \u0161etrn\u00e9 nan\u00e1\u0161en\u00ed bez pou\u017eit\u00ed plazmy, kter\u00e9 chr\u00e1n\u00ed citliv\u00e9 substr\u00e1ty a udr\u017euje vysokou kvalitu filmu.<\/li>\n
  • Inteligentn\u00ed \u0159\u00edzen\u00ed teploty:<\/strong> Monitorov\u00e1n\u00ed a nastaven\u00ed v re\u00e1ln\u00e9m \u010dase s p\u0159esnost\u00ed \u00b11 \u00b0C pro stabiln\u00ed a opakovateln\u00e9 v\u00fdsledky.<\/li>\n
  • Ultra\u010dist\u00e1 procesn\u00ed komora:<\/strong> Minimalizuje kontaminaci \u010d\u00e1sticemi, podporuje SiC a dal\u0161\u00ed pokro\u010dil\u00e9 materi\u00e1ly pro v\u00fdrobu desti\u010dek.<\/li>\n
  • P\u0159izp\u016fsobiteln\u00e1 konfigurace:<\/strong> Flexibiln\u00ed konstrukce vyhovuje r\u016fzn\u00fdm procesn\u00edm po\u017eadavk\u016fm, v\u010detn\u011b such\u00e9 nebo mokr\u00e9 oxidace a r\u016fzn\u00fdch velikost\u00ed pl\u00e1tk\u016f.<\/li>\n<\/ul>\n

    Technick\u00e9 specifikace<\/strong><\/span><\/h2>\n
    \n
    \n\n\n\n\n\n\n\n\n\n\n\n\n\n
    Funkce<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
    Velikost oplatky<\/td>\n6\/8\/12 Palec<\/td>\n<\/tr>\n
    Kompatibiln\u00ed materi\u00e1ly<\/td>\nPolysilikon, nitrid k\u0159em\u00edku, oxid k\u0159em\u00edku<\/td>\n<\/tr>\n
    Typ oxidace<\/td>\nSuch\u00fd kysl\u00edk \/ mokr\u00fd kysl\u00edk (DCE, HCL)<\/td>\n<\/tr>\n
    Rozsah procesn\u00ed teploty<\/td>\n500\u00b0C-900\u00b0C<\/td>\n<\/tr>\n
    Z\u00f3na konstantn\u00ed teploty<\/td>\n\u2265800 mm<\/td>\n<\/tr>\n
    P\u0159esnost regulace teploty<\/td>\n\u00b11\u00b0C<\/td>\n<\/tr>\n
    \u0158\u00edzen\u00ed \u010d\u00e1stic<\/td>\n0,32 \u03bcm), 0,32 \u03bcm), 0,226 \u03bcm)<\/td>\n<\/tr>\n
    Tlou\u0161\u0165ka filmu<\/td>\nNIT1500 \u00b150 \u00c5<\/td>\n<\/tr>\n
    Jednotnost<\/td>\nV r\u00e1mci desti\u010dky <2,5%, mezi desti\u010dkami <2,5%, mezi jednotliv\u00fdmi d\u00e1vkami <2%<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

    Vlastnosti produktu<\/strong><\/span><\/h2>\n
      \n
    • Automatizovan\u00e1 manipulace s pl\u00e1tky zaji\u0161\u0165uje vysokou bezpe\u010dnost a efektivitu provozu.<\/li>\n
    • Velmi \u010dist\u00e1 procesn\u00ed komora sni\u017euje riziko kontaminace a udr\u017euje st\u00e1lou kvalitu filmu.<\/li>\n
    • Vynikaj\u00edc\u00ed rovnom\u011brnost tlou\u0161\u0165ky vrstvy podporuje pokro\u010dilou v\u00fdrobu uzl\u016f.<\/li>\n
    • Inteligentn\u00ed \u0159\u00edzen\u00ed teploty a tlaku v re\u00e1ln\u00e9m \u010dase umo\u017e\u0148uje p\u0159esn\u00e9 nastaven\u00ed procesu.<\/li>\n
    • Podlo\u017eka SiC sni\u017euje t\u0159en\u00ed a tvorbu \u010d\u00e1stic, \u010d\u00edm\u017e prodlu\u017euje \u017eivotnost desti\u010dek.<\/li>\n
    • Modul\u00e1rn\u00ed konstrukce umo\u017e\u0148uje p\u0159izp\u016fsoben\u00ed r\u016fzn\u00fdm aplikac\u00edm a procesn\u00edm pot\u0159eb\u00e1m.<\/li>\n<\/ul>\n

      Princip procesu ukl\u00e1d\u00e1n\u00ed\"\"<\/strong><\/span><\/h2>\n
        \n
      1. Zaveden\u00ed plynu:<\/strong> Reak\u010dn\u00ed plyny se do trubice zav\u00e1d\u011bj\u00ed za n\u00edzk\u00e9ho tlaku (0,25-1 Torr).<\/li>\n
      2. Povrchov\u00e1 dif\u00faze:<\/strong> Molekuly voln\u011b difunduj\u00ed po povrchu desti\u010dky, co\u017e zaji\u0161\u0165uje rovnom\u011brn\u00e9 pokryt\u00ed.<\/li>\n
      3. Adsorpce:<\/strong> Reaktanty ulp\u00edvaj\u00ed na povrchu desti\u010dky p\u0159ed chemickou reakc\u00ed.<\/li>\n
      4. Chemick\u00e1 reakce:<\/strong> Tepeln\u00fdm rozkladem se vytvo\u0159\u00ed po\u017eadovan\u00e1 tenk\u00e1 vrstva p\u0159\u00edmo na podkladu.<\/li>\n
      5. Odstran\u011bn\u00ed vedlej\u0161\u00edch produkt\u016f:<\/strong> Nereaktivn\u00ed plyny se odv\u00e1d\u011bj\u00ed, aby se zachovala \u010distota a zabr\u00e1nilo se ru\u0161en\u00ed.<\/li>\n
      6. Tvorba filmu:<\/strong> Reak\u010dn\u00ed produkty se postupn\u011b hromad\u00ed a vytv\u00e1\u0159ej\u00ed rovnom\u011brnou, stabiln\u00ed tenkovrstvou vrstvu.<\/li>\n<\/ol>\n

        Aplikace<\/strong><\/span><\/h2>\n
          \n
        • St\u00ednic\u00ed oxidov\u00e1 vrstva:<\/strong> Chr\u00e1n\u00ed k\u0159em\u00edkov\u00e9 desti\u010dky p\u0159ed kontaminac\u00ed a omezuje iontov\u00e9 kan\u00e1lky b\u011bhem proces\u016f dopov\u00e1n\u00ed.<\/li>\n<\/ul>\n

          \"\"<\/p>\n

            \n
          • Oxidov\u00e1 vrstva podlo\u017eky:<\/strong> P\u016fsob\u00ed jako n\u00e1razn\u00edk nap\u011bt\u00ed mezi vrstvami k\u0159em\u00edku a nitridu k\u0159em\u00edku, zabra\u0148uje prask\u00e1n\u00ed desti\u010dek a zvy\u0161uje v\u00fdt\u011b\u017enost.<\/li>\n<\/ul>\n

            \"\"<\/p>\n

              \n
            • Oxidov\u00e1 vrstva br\u00e1ny:<\/strong> Poskytuje dielektrickou vrstvu ve struktur\u00e1ch MOS a zaji\u0161\u0165uje p\u0159esn\u00e9 veden\u00ed proudu a \u0159\u00edzen\u00ed pole.<\/li>\n<\/ul>\n

              \"\"<\/p>\n

              Konfigurace syst\u00e9mu<\/strong><\/span><\/h2>\n
                \n
              • Vertik\u00e1ln\u00ed LPCVD:<\/strong> Procesn\u00ed plyny proud\u00ed shora dol\u016f, \u010d\u00edm\u017e se dos\u00e1hne rovnom\u011brn\u00e9 depozice na v\u0161ech desti\u010dk\u00e1ch v d\u00e1vce.<\/li>\n<\/ul>\n

                \"\"<\/p>\n

                  \n
                • Horizont\u00e1ln\u00ed LPCVD:<\/strong> Plyny proud\u00ed pod\u00e9l substr\u00e1t\u016f, co\u017e je vhodn\u00e9 pro kontinu\u00e1ln\u00ed velkoobjemovou v\u00fdrobu, i kdy\u017e se tlou\u0161\u0165ka depozice m\u016f\u017ee v bl\u00edzkosti vstupn\u00ed strany m\u00edrn\u011b li\u0161it.<\/li>\n<\/ul>\n

                  \"\"<\/p>\n

                  \u010casto kladen\u00e9 ot\u00e1zky<\/strong><\/span><\/h2>\n

                  Ot\u00e1zka 1: K \u010demu se LPCVD prim\u00e1rn\u011b pou\u017e\u00edv\u00e1?<\/strong>
                  Odpov\u011b\u010f: LPCVD je n\u00edzkotlak\u00fd proces nan\u00e1\u0161en\u00ed tenk\u00fdch vrstev, kter\u00fd se \u0161iroce pou\u017e\u00edv\u00e1 p\u0159i v\u00fdrob\u011b polovodi\u010d\u016f pro nan\u00e1\u0161en\u00ed polyk\u0159em\u00edku, nitridu k\u0159em\u00edku a oxidu k\u0159em\u00edku a umo\u017e\u0148uje vytv\u00e1\u0159et rovnom\u011brn\u00e9 a vysoce kvalitn\u00ed vrstvy pro v\u00fdrobu pokro\u010dil\u00fdch za\u0159\u00edzen\u00ed.<\/p>\n

                  Ot\u00e1zka 2: Jak se LPCVD li\u0161\u00ed od PECVD?<\/strong>
                  Odpov\u011b\u010f: LPCVD se spol\u00e9h\u00e1 na tepelnou aktivaci za n\u00edzk\u00e9ho tlaku, aby se vytvo\u0159ily vysoce \u010dist\u00e9 filmy, zat\u00edmco PECVD pou\u017e\u00edv\u00e1 plazmu p\u0159i ni\u017e\u0161\u00edch teplot\u00e1ch pro rychlej\u0161\u00ed depozici, \u010dasto s m\u00edrn\u011b ni\u017e\u0161\u00ed kvalitou filmu.<\/p>\n

                  Q3: Jak\u00e9 velikosti desti\u010dek a materi\u00e1ly jsou kompatibiln\u00ed s touto LPCVD oxida\u010dn\u00ed pec\u00ed?<\/strong>
                  Odpov\u011b\u010f: Tato pec podporuje 6palcov\u00e9, 8palcov\u00e9 a 12palcov\u00e9 desti\u010dky a je kompatibiln\u00ed s polyk\u0159em\u00edkem, nitridem k\u0159em\u00edku, oxidem k\u0159em\u00edku a SiC desti\u010dkami, co\u017e poskytuje flexibilitu pro r\u016fzn\u00e9 polovodi\u010dov\u00e9 aplikace.<\/p>\n

                  Ot\u00e1zka 4: Lze oxida\u010dn\u00ed pec LPCVD p\u0159izp\u016fsobit pro konkr\u00e9tn\u00ed procesy?<\/strong>
                  Odpov\u011b\u010f: Ano, syst\u00e9m nab\u00edz\u00ed modul\u00e1rn\u00ed konfigurace, v\u010detn\u011b nastaviteln\u00fdch teplotn\u00edch z\u00f3n, \u0159\u00edzen\u00ed pr\u016ftoku plynu a re\u017eim\u016f oxidace (such\u00fd nebo mokr\u00fd), co\u017e umo\u017e\u0148uje splnit r\u016fzn\u00e9 procesn\u00ed po\u017eadavky pro v\u00fdzkum i pr\u016fmyslovou v\u00fdrobu.<\/p>","protected":false},"excerpt":{"rendered":"

                  Oxida\u010dn\u00ed pec LPCVD (Low Pressure Chemical Vapor Deposition) 6\/8\/12 palc\u016f je nejmodern\u011bj\u0161\u00ed n\u00e1stroj pro v\u00fdrobu polovodi\u010d\u016f ur\u010den\u00fd pro p\u0159esn\u00e9 a rovnom\u011brn\u00e9 nan\u00e1\u0161en\u00ed tenk\u00fdch vrstev. M\u00e1 \u0161irok\u00e9 uplatn\u011bn\u00ed p\u0159i p\u011bstov\u00e1n\u00ed vysoce kvalitn\u00edch vrstev polyk\u0159em\u00edku, nitridu k\u0159em\u00edku a oxidu k\u0159em\u00edku na desti\u010dk\u00e1ch a zaji\u0161\u0165uje konzistentn\u00ed v\u00fdkon pro v\u00fdkonov\u00e9 polovodi\u010de, pokro\u010dil\u00e9 substr\u00e1ty a dal\u0161\u00ed vysoce p\u0159esn\u00e9 aplikace.<\/p>","protected":false},"featured_media":1969,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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