![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/03\/sic_growth_furnace_pvt_method_6inch_8inch_12_inch_low_energy_consumption1-300x300.webp\")
Pec pro r\u016fst SiC (metoda PVT) je vysoce v\u00fdkonn\u00fd syst\u00e9m ur\u010den\u00fd k v\u00fdrob\u011b 6palcov\u00fdch, 8palcov\u00fdch a 12palcov\u00fdch monokrystal\u016f karbidu k\u0159em\u00edku (SiC).<\/p>\nPec pro r\u016fst SiC (metoda PVT) je vysoce v\u00fdkonn\u00fd syst\u00e9m ur\u010den\u00fd k v\u00fdrob\u011b 6palcov\u00fdch, 8palcov\u00fdch a 12palcov\u00fdch monokrystal\u016f karbidu k\u0159em\u00edku (SiC).<\/p>\n
Pec vyu\u017e\u00edv\u00e1 pokro\u010dilou technologii induk\u010dn\u00edho oh\u0159evu a poskytuje rychl\u00fd oh\u0159ev, p\u0159esn\u00e9 \u0159\u00edzen\u00ed teploty a n\u00edzkou spot\u0159ebu energie, co\u017e z n\u00ed \u010din\u00ed ide\u00e1ln\u00ed \u0159e\u0161en\u00ed pro pr\u016fmyslov\u00fd r\u016fst krystal\u016f SiC.<\/p>\n
Je \u0161iroce pou\u017e\u00edv\u00e1n p\u0159i v\u00fdrob\u011b SiC substr\u00e1t\u016f pro v\u00fdkonovou elektroniku, RF za\u0159\u00edzen\u00ed a polovodi\u010dov\u00e9 aplikace nov\u00e9 generace.<\/p>\n
Induk\u010dn\u00ed topn\u00fd syst\u00e9m
P\u0159\u00edm\u00fd elektromagnetick\u00fd oh\u0159ev grafitov\u00e9ho kel\u00edmku zaji\u0161\u0165uje vysokou \u00fa\u010dinnost a rychlou tepelnou odezvu.<\/p>\n<\/li>\n
Velmi p\u0159esn\u00e1 regulace teploty
P\u0159esnost a\u017e \u00b11 \u00b0C, co\u017e zaji\u0161\u0165uje stabiln\u00ed podm\u00ednky r\u016fstu krystal\u016f.<\/p>\n<\/li>\n
N\u00edzk\u00e1 spot\u0159eba energie
Optimalizovan\u00e1 tepeln\u00e1 konstrukce v\u00fdrazn\u011b sni\u017euje provozn\u00ed n\u00e1klady<\/p>\n<\/li>\n
Vysok\u00e1 stabilita a n\u00edzk\u00e1 kontaminace
Bezkontaktn\u00ed oh\u0159ev + prost\u0159ed\u00ed inertn\u00edho plynu minimalizuje ne\u010distoty<\/p>\n<\/li>\n
\u0160k\u00e1lovatelnost pro krystaly velk\u00e9ho pr\u016fm\u011bru
Podporuje r\u016fst krystal\u016f SiC 6\u2033, 8\u2033 a 12\u2033<\/p>\n<\/li>\n<\/ul>\n
| Parametr<\/th>\n | Specifikace<\/th>\n<\/tr>\n<\/thead>\n |
|---|---|
| Rozm\u011bry (D \u00d7 \u0160 \u00d7 V)<\/td>\n | 3200 \u00d7 1150 \u00d7 3600 mm (p\u0159izp\u016fsobiteln\u00e9)<\/td>\n<\/tr>\n |
| Pr\u016fm\u011br komory pece<\/td>\n | 400 mm<\/td>\n<\/tr>\n |
| Maxim\u00e1ln\u00ed teplota<\/td>\n | 2400\u00b0C<\/td>\n<\/tr>\n |
| Teplotn\u00ed rozsah<\/td>\n | 900-3000\u00b0C<\/td>\n<\/tr>\n |
| P\u0159esnost teploty<\/td>\n | \u00b11\u00b0C<\/td>\n<\/tr>\n |
| Zp\u016fsob vyt\u00e1p\u011bn\u00ed<\/td>\n | Induk\u010dn\u00ed oh\u0159ev<\/td>\n<\/tr>\n |
| Nap\u00e1jen\u00ed<\/td>\n | 40 kW, 8-12 kHz<\/td>\n<\/tr>\n |
| \u00darove\u0148 vakua<\/td>\n | 5 \u00d7 10-\u2074 Pa<\/td>\n<\/tr>\n |
| Rozsah tlaku<\/td>\n | 1-700 mbar<\/td>\n<\/tr>\n |
| M\u011b\u0159en\u00ed teploty<\/td>\n | Dvoubarevn\u00fd infra\u010derven\u00fd<\/td>\n<\/tr>\n |
| Zp\u016fsob nakl\u00e1d\u00e1n\u00ed<\/td>\n | Nakl\u00e1d\u00e1n\u00ed zespodu<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\nV\u00fdhody designu<\/span><\/h2>\nKompatibiln\u00ed s poloizola\u010dn\u00edm a vodiv\u00fdm r\u016fstem krystal\u016f SiC<\/p>\n<\/li>\n Syst\u00e9m ot\u00e1\u010den\u00ed kel\u00edmk\u016f zlep\u0161uje rovnom\u011brnost teploty<\/p>\n<\/li>\n Nastaviteln\u00fd zdvih induk\u010dn\u00ed c\u00edvky sni\u017euje tepeln\u00e9 ru\u0161en\u00ed<\/p>\n<\/li>\n Dvouvrstv\u00e1 vodou chlazen\u00e1 k\u0159emenn\u00e1 komora prodlu\u017euje \u017eivotnost za\u0159\u00edzen\u00ed<\/p>\n<\/li>\n Dvoubodov\u00e9 monitorov\u00e1n\u00ed teploty v re\u00e1ln\u00e9m \u010dase<\/p>\n<\/li>\n V\u00edce re\u017eim\u016f regulace: konstantn\u00ed v\u00fdkon \/ proud \/ teplota<\/p>\n<\/li>\n Inteligentn\u00ed spu\u0161t\u011bn\u00ed jedn\u00edm kliknut\u00edm pro automatizovan\u00fd provoz<\/p>\n<\/li>\n Kompaktn\u00ed struktura pro efektivn\u00ed uspo\u0159\u00e1d\u00e1n\u00ed tov\u00e1rny<\/p>\n<\/li>\n Vysoce p\u0159esn\u00e1 regulace tlaku (a\u017e \u00b11 Pa)<\/p>\n<\/li>\n<\/ul>\n V\u00fdkon a aplikace<\/span><\/h2>\nSiC MOSFETy<\/p>\n<\/li>\n Schottkyho diody<\/p>\n<\/li>\n RF za\u0159\u00edzen\u00ed<\/p>\n<\/li>\n Elektrick\u00e1 vozidla (nap\u00e1jec\u00ed moduly pro elektromobily)<\/p>\n<\/li>\n Sol\u00e1rn\u00ed st\u0159\u00edda\u010de<\/p>\n<\/li>\n Komunika\u010dn\u00ed syst\u00e9my 5G<\/p>\n<\/li>\n<\/ul>\n D\u00edky stabiln\u00ed tepeln\u00e9 regulaci a optimalizovan\u00fdm podm\u00ednk\u00e1m r\u016fstu zaji\u0161\u0165uje syst\u00e9m vysokou v\u00fdt\u011b\u017enost, konzistenci a \u0161k\u00e1lovatelnost pro pr\u016fmyslovou v\u00fdrobu.<\/p>\n
Na\u0161e schopnosti (ZMSH)<\/span><\/h2>\n
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![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/03\/SiC-Growth-Furnace5.png\")
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