![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/03\/sic_crystal_growth_furnace_pvt_lpe_ht_cvd_high_quality_sic_single_crystal_growth_method-300x259.webp\")
Pec pro r\u016fst krystal\u016f SiC je d\u016fle\u017eit\u00fdm za\u0159\u00edzen\u00edm pro v\u00fdrobu vysoce kvalitn\u00edch monokrystal\u016f karbidu k\u0159em\u00edku (SiC) pou\u017e\u00edvan\u00fdch ve v\u00fdkonov\u00e9 elektronice, r\u00e1diov\u00fdch za\u0159\u00edzen\u00edch a pokro\u010dil\u00fdch polovodi\u010dov\u00fdch aplikac\u00edch.<\/p>\n
Na\u0161e syst\u00e9my podporuj\u00ed \u0159adu hlavn\u00edch r\u016fstov\u00fdch technologi\u00ed, v\u010detn\u011b:<\/p>\n
Fyzik\u00e1ln\u00ed transport par (PVT)<\/p>\n<\/li>\n
Epitaxe v kapaln\u00e9 f\u00e1zi (LPE)<\/p>\n<\/li>\n
Vysokoteplotn\u00ed chemick\u00e9 napa\u0159ov\u00e1n\u00ed (HT-CVD)<\/p>\n<\/li>\n<\/ul>\n
D\u00edky p\u0159esn\u00e9mu \u0159\u00edzen\u00ed vysok\u00e9 teploty, vakua a pr\u016ftoku plynu umo\u017e\u0148uje pec stabiln\u00ed v\u00fdrobu krystal\u016f SiC s n\u00edzk\u00fdm v\u00fdskytem vad a vysokou \u010distotou ve velikostech 4-6 palc\u016f, p\u0159i\u010dem\u017e pro v\u011bt\u0161\u00ed pr\u016fm\u011bry je mo\u017en\u00e9 p\u0159izp\u016fsoben\u00ed.<\/p>\n
Princip procesu:![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/03\/Sic-Crystal-Growth-Furnace-PVT-LPE-HT-CVD-High-Quality-Sic-Single-Crystal-Growth-Method5-300x130.jpg\")
Pr\u00e1\u0161ek SiC se sublimuje p\u0159i teplot\u00e1ch nad 2000 \u00b0C. P\u00e1ry se p\u0159en\u00e1\u0161ej\u00ed pod\u00e9l teplotn\u00edho gradientu a rekrystalizuj\u00ed na krystalu.<\/p>\n
Kl\u00ed\u010dov\u00e9 vlastnosti:<\/p>\n
Vysoce \u010dist\u00fd grafitov\u00fd kel\u00edmek a dr\u017e\u00e1k semen<\/p>\n<\/li>\n
Integrovan\u00fd termo\u010dl\u00e1nek + infra\u010derven\u00e9 monitorov\u00e1n\u00ed teploty<\/p>\n<\/li>\n
Syst\u00e9m \u0159\u00edzen\u00ed pr\u016ftoku vakua a inertn\u00edho plynu<\/p>\n<\/li>\n
Automatick\u00e9 \u0159\u00edzen\u00ed proces\u016f pomoc\u00ed PLC<\/p>\n<\/li>\n
Integrace chlazen\u00ed a \u010di\u0161t\u011bn\u00ed v\u00fdfukov\u00fdch plyn\u016f<\/p>\n<\/li>\n<\/ul>\n
V\u00fdhody:<\/p>\n
Vysp\u011bl\u00e1 a \u0161iroce roz\u0161\u00ed\u0159en\u00e1 technologie<\/p>\n<\/li>\n
Relativn\u011b n\u00edzk\u00e9 n\u00e1klady na vybaven\u00ed<\/p>\n<\/li>\n
Vhodn\u00e9 pro r\u016fst objemov\u00fdch krystal\u016f SiC<\/p>\n<\/li>\n<\/ul>\n
Aplikace:<\/p>\n
V\u00fdroba poloizola\u010dn\u00edch a vodiv\u00fdch substr\u00e1t\u016f SiC<\/p>\n<\/li>\n<\/ul>\n
![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/03\/Sic-Crystal-Growth-Furnace-PVT-LPE-HT-CVD-High-Quality-Sic-Single-Crystal-Growth-Method6-300x96.jpg\")
Princip procesu:
Vysoce \u010dist\u00e9 plyny (nap\u0159. SiH\u2084 + C\u2082H\u2084 \/ C\u2083H\u2088) se rozkl\u00e1daj\u00ed p\u0159i 1800-2300 \u00b0C a ukl\u00e1daj\u00ed SiC na seed krystal.<\/p>\n
Kl\u00ed\u010dov\u00e9 vlastnosti:<\/p>\n
Induk\u010dn\u00ed oh\u0159ev pomoc\u00ed elektromagnetick\u00e9 vazby<\/p>\n<\/li>\n
Stabiln\u00ed syst\u00e9m dod\u00e1vky plynu (nosn\u00e9 plyny He \/ H\u2082)<\/p>\n<\/li>\n
\u0158\u00edzen\u00fd teplotn\u00ed gradient pro kondenzaci krystal\u016f<\/p>\n<\/li>\n
P\u0159esn\u00e1 schopnost dopov\u00e1n\u00ed<\/p>\n<\/li>\n<\/ul>\n
V\u00fdhody:<\/p>\n
N\u00edzk\u00e1 hustota defekt\u016f<\/p>\n<\/li>\n
Vysok\u00e1 krystalov\u00e1 \u010distota<\/p>\n<\/li>\n
Pru\u017en\u00e1 dopingov\u00e1 kontrola<\/p>\n<\/li>\n<\/ul>\n
Aplikace:<\/p>\n
Vysoce v\u00fdkonn\u00e9 SiC desti\u010dky pro pokro\u010dil\u00e1 elektronick\u00e1 za\u0159\u00edzen\u00ed<\/p>\n<\/li>\n<\/ul>\n
![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/03\/Sic-Crystal-Growth-Furnace-PVT-LPE-HT-CVD-High-Quality-Sic-Single-Crystal-Growth-Method7-300x133.jpg\")
Princip procesu:
Si a C se rozpou\u0161t\u011bj\u00ed ve vysokoteplotn\u00edm roztoku (~ 1800 \u00b0C) a SiC krystalizuje z p\u0159esycen\u00e9 taveniny b\u011bhem \u0159\u00edzen\u00e9ho ochlazov\u00e1n\u00ed.<\/p>\n
Kl\u00ed\u010dov\u00e9 vlastnosti:<\/p>\n
Vysoce kvalitn\u00ed epitaxn\u00ed r\u016fst vrstvy<\/p>\n<\/li>\n
N\u00edzk\u00e1 hustota defekt\u016f a vysok\u00e1 \u010distota<\/p>\n<\/li>\n
Relativn\u011b n\u00edzk\u00e9 n\u00e1roky na vybaven\u00ed<\/p>\n<\/li>\n
\u0160k\u00e1lovatelnost pro pr\u016fmyslovou v\u00fdrobu<\/p>\n<\/li>\n<\/ul>\n
V\u00fdhody:<\/p>\n
Ni\u017e\u0161\u00ed n\u00e1klady na r\u016fst<\/p>\n<\/li>\n
Zlep\u0161en\u00e1 kvalita epitaxn\u00ed vrstvy<\/p>\n<\/li>\n<\/ul>\n
Aplikace:<\/p>\n
R\u016fst epitaxn\u00ed vrstvy na substr\u00e1tech SiC<\/p>\n<\/li>\n
V\u00fdroba vysoce \u00fa\u010dinn\u00fdch v\u00fdkonov\u00fdch za\u0159\u00edzen\u00ed<\/p>\n<\/li>\n<\/ul>\n
Provoz p\u0159i vysok\u00fdch teplot\u00e1ch (>2000 \u00b0C)<\/p>\n<\/li>\n
Stabiln\u00ed regulace vakua a pr\u016ftoku plynu<\/p>\n<\/li>\n
Pokro\u010dil\u00fd automatiza\u010dn\u00ed syst\u00e9m PLC<\/p>\n<\/li>\n
P\u0159izp\u016fsobiteln\u00e1 konstrukce pece (velikost, konfigurace, proces)<\/p>\n<\/li>\n
Kompatibiln\u00ed s r\u016fstem krystal\u016f SiC o velikosti 4-6 palc\u016f (roz\u0161i\u0159iteln\u00e9)<\/p>\n<\/li>\n<\/ul>\n
Nab\u00edz\u00edme pln\u011b konstruovan\u00e9 pece pro r\u016fst krystal\u016f SiC ur\u010den\u00e9 pro:<\/p>\n
Vysoce \u010dist\u00fd poloizola\u010dn\u00ed SiC<\/p>\n<\/li>\n
V\u00fdroba vodiv\u00fdch krystal\u016f SiC<\/p>\n<\/li>\n
Po\u017eadavky na s\u00e9riovou v\u00fdrobu<\/p>\n<\/li>\n<\/ul>\n
Dod\u00e1v\u00e1me:<\/p>\n
Zdrojov\u00e9 materi\u00e1ly SiC<\/p>\n<\/li>\n
Krystaly semen<\/p>\n<\/li>\n
Procesn\u00ed spot\u0159ebn\u00ed materi\u00e1l<\/p>\n<\/li>\n<\/ul>\n
V\u0161echny materi\u00e1ly proch\u00e1zej\u00ed p\u0159\u00edsnou kontrolou kvality, aby byla zaji\u0161t\u011bna stabilita procesu.<\/p>\n
N\u00e1\u0161 t\u00fdm in\u017een\u00fdr\u016f podporuje:<\/p>\n
V\u00fdvoj proces\u016f na zak\u00e1zku<\/p>\n<\/li>\n
Optimalizace r\u016fstov\u00fdch parametr\u016f<\/p>\n<\/li>\n
Zlep\u0161en\u00ed v\u00fdt\u011b\u017enosti a kvality krystal\u016f<\/p>\n<\/li>\n<\/ul>\n
Nab\u00edz\u00edme:<\/p>\n
\u0160kolen\u00ed na m\u00edst\u011b \/ na d\u00e1lku<\/p>\n<\/li>\n
Pokyny pro provoz za\u0159\u00edzen\u00ed<\/p>\n<\/li>\n
\u00dadr\u017eba a podpora p\u0159i \u0159e\u0161en\u00ed probl\u00e9m\u016f<\/p>\n<\/li>\n<\/ul>\n
Ot\u00e1zka 1: Jak\u00e9 jsou hlavn\u00ed metody r\u016fstu krystal\u016f SiC?
Odpov\u011b\u010f: Mezi z\u00e1kladn\u00ed metody pat\u0159\u00ed PVT, HT-CVD a LPE, p\u0159i\u010dem\u017e ka\u017ed\u00e1 z nich je vhodn\u00e1 pro jin\u00e9 aplikace a v\u00fdrobn\u00ed c\u00edle.<\/p>\n
Ot\u00e1zka 2: Co je epitaxe v kapaln\u00e9 f\u00e1zi (LPE)?
Odpov\u011b\u010f: LPE je metoda r\u016fstu zalo\u017een\u00e1 na roztoku, p\u0159i n\u00ed\u017e se nasycen\u00e1 tavenina pomalu ochlazuje, \u010d\u00edm\u017e se na substr\u00e1tu stimuluje r\u016fst krystal\u016f, co\u017e umo\u017e\u0148uje vytv\u00e1\u0159et vysoce kvalitn\u00ed epitaxn\u00ed vrstvy.<\/p>\n
Prokazateln\u00e9 in\u017een\u00fdrsk\u00e9 zku\u0161enosti se za\u0159\u00edzen\u00edmi SiC<\/p>\n<\/li>\n
Kompatibilita v\u00edce metod (PVT \/ HT-CVD \/ LPE)<\/p>\n<\/li>\n
\u0158e\u0161en\u00ed na m\u00edru pro r\u016fzn\u00e1 m\u011b\u0159\u00edtka v\u00fdroby<\/p>\n<\/li>\n
Podpora cel\u00e9ho \u017eivotn\u00edho cyklu (za\u0159\u00edzen\u00ed + materi\u00e1l + proces)<\/p>\n<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"
Pec pro r\u016fst krystal\u016f SiC je d\u016fle\u017eit\u00fdm za\u0159\u00edzen\u00edm pro v\u00fdrobu vysoce kvalitn\u00edch monokrystal\u016f karbidu k\u0159em\u00edku (SiC) pou\u017e\u00edvan\u00fdch ve v\u00fdkonov\u00e9 elektronice, r\u00e1diov\u00fdch za\u0159\u00edzen\u00edch a pokro\u010dil\u00fdch polovodi\u010dov\u00fdch aplikac\u00edch.<\/p>\n
Na\u0161e syst\u00e9my podporuj\u00ed \u0159adu hlavn\u00edch r\u016fstov\u00fdch technologi\u00ed, v\u010detn\u011b:<\/p>","protected":false},"featured_media":1949,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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