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<\/p>\n<\/p>\n
Pec ZMSH pro r\u016fst monokrystal\u016f SiC s odporov\u00fdm oh\u0159evem je vysokoteplotn\u00ed syst\u00e9m pro r\u016fst krystal\u016f speci\u00e1ln\u011b navr\u017een\u00fd pro v\u00fdrobu monokrystal\u016f karbidu k\u0159em\u00edku o velk\u00e9m pr\u016fm\u011bru, kter\u00fd podporuje v\u00fdrobu 6palcov\u00fdch, 8palcov\u00fdch a 12palcov\u00fdch SiC desti\u010dek.<\/p>\n
<\/p>\n
uring.<\/p>\n
Pec je navr\u017eena na principu fyzik\u00e1ln\u00edho transportu par (PVT) a integruje p\u0159esn\u00e9 \u0159\u00edzen\u00ed odporov\u00e9ho oh\u0159evu, stabiln\u00ed rozlo\u017een\u00ed tepeln\u00e9ho pole, \u0159\u00edzen\u00ed prost\u0159ed\u00ed s vysok\u00fdm vakuem a p\u0159esnou regulaci tlaku.
Tato konfigurace umo\u017e\u0148uje r\u016fst monokrystal\u016f SiC s vysokou \u010distotou a n\u00edzkou hustotou defekt\u016f vhodn\u00fdch pro pokro\u010dil\u00e9 aplikace v\u00fdkonov\u00fdch polovodi\u010d\u016f a elektronick\u00fdch za\u0159\u00edzen\u00ed.<\/p>\n
Syst\u00e9m je vyvinut tak, aby spl\u0148oval po\u017eadavky pr\u016fmyslov\u00e9 v\u00fdroby a zaji\u0161\u0165oval stabilitu procesu, opakovatelnost a dlouhodobou provozn\u00ed spolehlivost v prost\u0159ed\u00ed velk\u00e9ho r\u016fstu krystal\u016f SiC.<\/p>\n
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<\/p>\n
Pec vyu\u017e\u00edv\u00e1 v\u00edcez\u00f3novou strukturu odporov\u00e9ho oh\u0159evu k dosa\u017een\u00ed rovnom\u011brn\u00e9ho axi\u00e1ln\u00edho a radi\u00e1ln\u00edho rozlo\u017een\u00ed teploty. T\u00edm se minimalizuj\u00ed tepeln\u00e9 gradienty, sni\u017euje vnit\u0159n\u00ed nap\u011bt\u00ed a zlep\u0161uje se struktur\u00e1ln\u00ed integrita krystal\u016f b\u011bhem procesu r\u016fstu.<\/p>\n
Maxim\u00e1ln\u00ed provozn\u00ed teplota a\u017e 2500 \u00b0C<\/p>\n<\/li>\n
P\u0159esnost regulace teploty: \u00b11 \u00b0C<\/p>\n<\/li>\n
\u0160irok\u00fd rozsah regulace tlaku: 1-700 mbar<\/p>\n<\/li>\n<\/ul>\n
Tyto parametry zaji\u0161\u0165uj\u00ed stabiln\u00ed termodynamick\u00e9 prost\u0159ed\u00ed nezbytn\u00e9 pro \u0159\u00edzenou sublimaci, transport par a rekrystalizaci krystal\u016f p\u0159i r\u016fstu SiC.<\/p>\n
D\u00edky pr\u016fm\u011bru kel\u00edmku 900 mm syst\u00e9m podporuje r\u016fst 8palcov\u00fdch a 12palcov\u00fdch ingot\u016f SiC nov\u00e9 generace, co\u017e v\u00fdrobc\u016fm umo\u017e\u0148uje roz\u0161\u00ed\u0159it v\u00fdrobu a z\u00e1rove\u0148 zv\u00fd\u0161it v\u00fdt\u011b\u017enost a konzistenci pl\u00e1tk\u016f.<\/p>\n
V peci je udr\u017eov\u00e1na r\u016fstov\u00e1 komora s n\u00edzk\u00fdm \u00fanikem a vysok\u00fdm vakuem, co\u017e zaji\u0161\u0165uje sn\u00ed\u017een\u00ed rizika kontaminace, vy\u0161\u0161\u00ed \u010distotu krystal\u016f a stabiln\u00ed dlouhodob\u00fd provoz.<\/p>\n
![\"\"](\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/01\/pl204262670-sic_single_crystal_resistance_heating_crystal_growth_furnace_for_6inch_8inch_12inch_sic_wafers_manufacture-300x300.webp\")
<\/h2>\n<\/p>\n
V\u00fdkonov\u00e9 polovodi\u010dov\u00e9 substr\u00e1ty<\/p>\n<\/li>\n
Nap\u00e1jec\u00ed moduly pro elektrick\u00e1 vozidla<\/p>\n<\/li>\n
Vysokonap\u011b\u0165ov\u00e1 za\u0159\u00edzen\u00ed MOSFET a diody<\/p>\n<\/li>\n
Syst\u00e9my p\u0159em\u011bny energie z obnoviteln\u00fdch zdroj\u016f<\/p>\n<\/li>\n
Vysokofrekven\u010dn\u00ed a radiofrekven\u010dn\u00ed elektronick\u00e9 sou\u010d\u00e1stky<\/p>\n<\/li>\n
Pr\u016fmyslov\u00e1 v\u00fdkonov\u00e1 elektronika<\/p>\n<\/li>\n<\/ul>\n
<\/p>\n
<\/p>\n
| Ne.<\/th>\n | Specifikace<\/th>\n | Podrobnosti na<\/th>\n<\/tr>\n<\/thead>\n |
|---|---|---|
| 1<\/td>\n | Model<\/td>\n | PVT-RS-40<\/td>\n<\/tr>\n |
| 2<\/td>\n | Rozm\u011bry pece (D \u00d7 \u0160 \u00d7 V)<\/td>\n | 2500 \u00d7 2400 \u00d7 3456 mm<\/td>\n<\/tr>\n |
| 3<\/td>\n | Pr\u016fm\u011br kel\u00edmku<\/td>\n | 900 mm<\/td>\n<\/tr>\n |
| 4<\/td>\n | Nejvy\u0161\u0161\u00ed tlak vakua<\/td>\n | 6 \u00d7 10-\u2074 Pa (po 1,5 h vakua)<\/td>\n<\/tr>\n |
| 5<\/td>\n | M\u00edra \u00faniku<\/td>\n | \u22645 Pa \/ 12 h (vypalov\u00e1n\u00ed)<\/td>\n<\/tr>\n |
| 6<\/td>\n | Pr\u016fm\u011br rota\u010dn\u00edho h\u0159\u00eddele<\/td>\n | 50 mm<\/td>\n<\/tr>\n |
| 7<\/td>\n | Rychlost ot\u00e1\u010den\u00ed<\/td>\n | 0,5-5 ot\u00e1\u010dek za minutu<\/td>\n<\/tr>\n |
| 8<\/td>\n | Zp\u016fsob vyt\u00e1p\u011bn\u00ed<\/td>\n | Elektrick\u00e9 odporov\u00e9 vyt\u00e1p\u011bn\u00ed<\/td>\n<\/tr>\n |
| 9<\/td>\n | Maxim\u00e1ln\u00ed teplota pece<\/td>\n | 2500\u00b0C<\/td>\n<\/tr>\n |
| 10<\/td>\n | Topn\u00fd v\u00fdkon<\/td>\n | 40 kW \u00d7 2 + 20 kW<\/td>\n<\/tr>\n |
| 11<\/td>\n | M\u011b\u0159en\u00ed teploty<\/td>\n | Dvoubarevn\u00fd infra\u010derven\u00fd pyrometr<\/td>\n<\/tr>\n |
| 12<\/td>\n | Teplotn\u00ed rozsah<\/td>\n | 900-3000\u00b0C<\/td>\n<\/tr>\n |
| 13<\/td>\n | P\u0159esnost teploty<\/td>\n | \u00b11\u00b0C<\/td>\n<\/tr>\n |
| 14<\/td>\n | Rozsah tlaku<\/td>\n | 1-700 mbar<\/td>\n<\/tr>\n |
| 15<\/td>\n | P\u0159esnost regulace tlaku<\/td>\n | \u00b10,5% v pln\u00e9m rozsahu<\/td>\n<\/tr>\n |
| 16<\/td>\n | Typ operace<\/td>\n | Spodn\u00ed pln\u011bn\u00ed, manu\u00e1ln\u00ed nebo automatick\u00e9 bezpe\u010dnostn\u00ed re\u017eimy<\/td>\n<\/tr>\n |
| 17<\/td>\n | Voliteln\u00e9 konfigurace<\/td>\n | V\u00edcez\u00f3nov\u00e9 vyt\u00e1p\u011bn\u00ed, du\u00e1ln\u00ed sledov\u00e1n\u00ed teploty<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<\/h2>\n |