{"id":2444,"date":"2026-05-06T02:35:43","date_gmt":"2026-05-06T02:35:43","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?p=2444"},"modified":"2026-05-06T02:43:43","modified_gmt":"2026-05-06T02:43:43","slug":"300mm-wafer-dicing","status":"publish","type":"post","link":"https:\/\/www.zmsh-semitech.com\/cs\/300mm-wafer-dicing\/","title":{"rendered":"300mm desti\u010dky: Kl\u00ed\u010dov\u00e9 v\u00fdzvy, osv\u011bd\u010den\u00e1 \u0159e\u0161en\u00ed a optimalizace procesu"},"content":{"rendered":"

S pokra\u010duj\u00edc\u00edm p\u0159echodem polovodi\u010dov\u00e9ho pr\u016fmyslu na velkos\u00e9riovou v\u00fdrobu na 300mm waferech se z dicingu stal jeden z nejd\u016fle\u017eit\u011bj\u0161\u00edch - a st\u00e1le slo\u017eit\u011bj\u0161\u00edch - koncov\u00fdch proces\u016f. V porovn\u00e1n\u00ed s men\u0161\u00edmi desti\u010dkami p\u0159in\u00e1\u0161ej\u00ed 300mm substr\u00e1ty vy\u0161\u0161\u00ed mechanick\u00e9 nam\u00e1h\u00e1n\u00ed, p\u0159\u00edsn\u011bj\u0161\u00ed tolerance a v\u011bt\u0161\u00ed riziko v\u00fdt\u011b\u017enosti, zejm\u00e9na p\u0159i zpracov\u00e1n\u00ed pokro\u010dil\u00fdch materi\u00e1l\u016f, jako je karbid k\u0159em\u00edku (SiC), saf\u00edr a ultratenk\u00fd k\u0159em\u00edk.<\/p>\n\n\n\n

Tato p\u0159\u00edru\u010dka vysv\u011btluje skute\u010dn\u00e9 technick\u00e9 probl\u00e9my, kter\u00e9 se skr\u00fdvaj\u00ed za D\u011blen\u00ed 300mm desti\u010dek<\/mark><\/a> a poskytuje praktick\u00e1, v\u00fdrobou ov\u011b\u0159en\u00e1 \u0159e\u0161en\u00ed, kter\u00e1 odpov\u00eddaj\u00ed sou\u010dasn\u00fdm pr\u016fmyslov\u00fdm postup\u016fm a mo\u017enostem za\u0159\u00edzen\u00ed.<\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

Co je 300 mm Wafer Dicing?<\/h2>\n\n\n\n

D\u011blen\u00ed desti\u010dek je proces rozd\u011blov\u00e1n\u00ed zpracov\u00e1van\u00fdch polovodi\u010dov\u00fdch desti\u010dek na jednotliv\u00e9 matrice pomoc\u00ed:<\/p>\n\n\n\n

    \n
  • Kr\u00e1jen\u00ed ost\u0159\u00ed (mechanick\u00e9 \u0159ez\u00e1n\u00ed)<\/strong><\/li>\n\n\n\n
  • Laserov\u00e9 kr\u00e1jen\u00ed na kostky<\/strong><\/li>\n\n\n\n
  • Stealth dicing (laserem indukovan\u00e1 vnit\u0159n\u00ed modifikace)<\/strong><\/li>\n<\/ul>\n\n\n\n

    U 300mm desti\u010dek mus\u00ed b\u00fdt tento krok zachov\u00e1n:<\/p>\n\n\n\n

      \n
    • P\u0159esnost na \u00farovni mikron\u016f<\/strong><\/li>\n\n\n\n
    • Minim\u00e1ln\u00ed od\u0161t\u00edpnut\u00ed<\/strong><\/li>\n\n\n\n
    • Vysok\u00e1 konzistence pr\u016fchodnosti<\/strong><\/li>\n<\/ul>\n\n\n\n

      Kl\u00ed\u010dov\u00e9 v\u00fdzvy p\u0159i d\u011blen\u00ed 300mm desti\u010dek<\/h2>\n\n\n\n

      1. Deformace desti\u010dky a mechanick\u00e1 stabilita<\/h3>\n\n\n\n

      V\u011bt\u0161\u00ed desti\u010dky jsou ze sv\u00e9 podstaty n\u00e1chyln\u011bj\u0161\u00ed na deformace<\/strong> kv\u016fli:<\/p>\n\n\n\n

        \n
      • Akumulace nap\u011bt\u00ed ve filmu<\/li>\n\n\n\n
      • Nesoulad tepeln\u00e9 rozta\u017enosti<\/li>\n\n\n\n
      • Zten\u010den\u00ed zadn\u00ed strany<\/li>\n<\/ul>\n\n\n\n

        Dopad:<\/strong><\/p>\n\n\n\n

          \n
        • Nerovnom\u011brn\u00e1 hloubka \u0159ezu<\/li>\n\n\n\n
        • Odchylka \u010depele<\/li>\n\n\n\n
        • Zv\u00fd\u0161en\u00e1 tvorba trhlin v matrici<\/li>\n<\/ul>\n\n\n\n

          \u0158e\u0161en\u00ed:<\/strong><\/p>\n\n\n\n

            \n
          • Pou\u017eijte vakuov\u00e1 skl\u00ed\u010didla s vysokou tuhost\u00ed<\/strong> s adaptivn\u00edm vyrovn\u00e1v\u00e1n\u00edm<\/li>\n\n\n\n
          • Implementace syst\u00e9my sn\u00edm\u00e1n\u00ed v\u00fd\u0161ky v re\u00e1ln\u00e9m \u010dase<\/strong><\/li>\n\n\n\n
          • Optimalizace mont\u00e1\u017ee p\u00e1sky pro sn\u00ed\u017een\u00ed rozlo\u017een\u00ed nap\u011bt\u00ed<\/li>\n<\/ul>\n\n\n\n

            2. Manipulace s ultratenk\u00fdmi desti\u010dkami<\/h3>\n\n\n\n

            Modern\u00ed oplatky se \u010dasto zten\u010duj\u00ed na <100 \u00b5m<\/strong>, zejm\u00e9na v oblasti modern\u00edch obal\u016f.<\/p>\n\n\n\n

            Rizika:<\/strong><\/p>\n\n\n\n

              \n
            • L\u00e1m\u00e1n\u00ed desti\u010dek p\u0159i manipulaci<\/li>\n\n\n\n
            • Vady zp\u016fsoben\u00e9 vibracemi<\/li>\n\n\n\n
            • Deformace p\u00e1sky<\/li>\n<\/ul>\n\n\n\n

              \u0158e\u0161en\u00ed:<\/strong><\/p>\n\n\n\n

                \n
              • UV uvol\u0148ovac\u00ed p\u00e1ska pro \u0159\u00edzen\u00e9 odeb\u00edr\u00e1n\u00ed v\u00fdsekov\u00fdch materi\u00e1l\u016f<\/li>\n\n\n\n
              • Do\u010dasn\u00e9 lepen\u00ed (nosn\u00e9 desti\u010dky)<\/li>\n\n\n\n
              • Syst\u00e9my v\u0159eten s n\u00edzk\u00fdmi vibracemi<\/li>\n<\/ul>\n\n\n\n

                3. Odlupov\u00e1n\u00ed hran a mikrotrhliny<\/h3>\n\n\n\n

                Tvrd\u00e9 a k\u0159ehk\u00e9 materi\u00e1ly (SiC, saf\u00edr) v\u00fdrazn\u011b zvy\u0161uj\u00ed riziko:<\/p>\n\n\n\n

                  \n
                • Odlamov\u00e1n\u00ed hran<\/li>\n\n\n\n
                • Podpovrchov\u00e9 mikrotrhliny<\/li>\n\n\n\n
                • Degradace pevnosti matrice<\/li>\n<\/ul>\n\n\n\n

                  \u0158e\u0161en\u00ed:<\/strong><\/p>\n\n\n\n

                    \n
                  • Pou\u017e\u00edvejte ultratenk\u00e9 diamantov\u00e9 b\u0159ity (20-50 \u00b5m)<\/li>\n\n\n\n
                  • Optimalizace ot\u00e1\u010dek v\u0159etena a rychlosti posuvu<\/li>\n\n\n\n
                  • Zaveden\u00ed v\u00edcestup\u0148ov\u00e9ho \u0159ez\u00e1n\u00ed (hrub\u00e9 + jemn\u00e9)<\/li>\n\n\n\n
                  • Zva\u017ete laserov\u00e9 d\u011blen\u00ed k\u0159ehk\u00fdch materi\u00e1l\u016f<\/li>\n<\/ul>\n\n\n\n

                    4. Tepeln\u00e9 po\u0161kozen\u00ed a \u0159\u00edzen\u00ed tepla<\/h3>\n\n\n\n

                    P\u0159i kr\u00e1jen\u00ed kostek vznik\u00e1 lok\u00e1ln\u00ed teplo, zejm\u00e9na p\u0159i vysok\u00fdch ot\u00e1\u010dk\u00e1ch v\u0159etena.<\/p>\n\n\n\n

                    Probl\u00e9my:<\/strong><\/p>\n\n\n\n

                      \n
                    • Tepeln\u00e9 nam\u00e1h\u00e1n\u00ed<\/li>\n\n\n\n
                    • Deformace matrice<\/li>\n\n\n\n
                    • Sn\u00ed\u017een\u00e1 spolehlivost za\u0159\u00edzen\u00ed<\/li>\n<\/ul>\n\n\n\n

                      \u0158e\u0161en\u00ed:<\/strong><\/p>\n\n\n\n

                        \n
                      • Vysoce \u00fa\u010dinn\u00e9 syst\u00e9my dod\u00e1v\u00e1n\u00ed chladic\u00ed kapaliny<\/li>\n\n\n\n
                      • Optimalizovan\u00fd pr\u016ftok kalu pro odstran\u011bn\u00ed ne\u010distot a tepla<\/li>\n\n\n\n
                      • Laserov\u00e9 kr\u00e1jen\u00ed s minim\u00e1ln\u00ed tepeln\u011b ovlivn\u011bnou z\u00f3nou (HAZ)<\/li>\n<\/ul>\n\n\n\n

                        5. Kompromis mezi propustnost\u00ed a p\u0159esnost\u00ed<\/h3>\n\n\n\n

                        V\u00fdrobci \u010del\u00ed neust\u00e1l\u00e9mu tlaku na zvy\u0161ov\u00e1n\u00ed v\u00fdkonnosti bez ob\u011btov\u00e1n\u00ed v\u00fdt\u011b\u017enosti.<\/p>\n\n\n\n

                        Konflikt:<\/strong><\/p>\n\n\n\n

                          \n
                        • Vy\u0161\u0161\u00ed rychlost \u2192 v\u00edce z\u00e1vad<\/li>\n\n\n\n
                        • Vy\u0161\u0161\u00ed p\u0159esnost \u2192 ni\u017e\u0161\u00ed produktivita<\/li>\n<\/ul>\n\n\n\n

                          \u0158e\u0161en\u00ed:<\/strong><\/p>\n\n\n\n

                            \n
                          • Optimalizace proces\u016f s pomoc\u00ed um\u011bl\u00e9 inteligence<\/li>\n\n\n\n
                          • Automatick\u00e9 sledov\u00e1n\u00ed opot\u0159eben\u00ed lopatek<\/li>\n\n\n\n
                          • Paraleln\u00ed v\u00edcev\u0159etenov\u00e9 syst\u00e9my<\/li>\n<\/ul>\n\n\n\n

                            Srovn\u00e1n\u00ed technologi\u00ed kostkov\u00e1n\u00ed<\/h2>\n\n\n\n
                            Technologie<\/th>Nejlep\u0161\u00ed pro<\/th>V\u00fdhody<\/th>Omezen\u00ed<\/th><\/tr><\/thead>
                            Kr\u00e1jen\u00ed \u010depel\u00ed na kostky<\/td>K\u0159em\u00edk, v\u0161eobecn\u00e9 pou\u017eit\u00ed<\/td>Zral\u00fd, n\u00e1kladov\u011b efektivn\u00ed<\/td>Mechanick\u00e9 nam\u00e1h\u00e1n\u00ed<\/td><\/tr>
                            Laserov\u00e9 d\u011blen\u00ed<\/td>SiC, saf\u00edr<\/td>\u017d\u00e1dn\u00e9 opot\u0159eben\u00ed ost\u0159\u00ed, vysok\u00e1 p\u0159esnost<\/td>Vy\u0161\u0161\u00ed n\u00e1klady na vybaven\u00ed<\/td><\/tr>
                            Stealth Dicing<\/td>Pokro\u010dil\u00e9 tenk\u00e9 desti\u010dky<\/td>Minim\u00e1ln\u00ed po\u0161kozen\u00ed povrchu<\/td>Komplexn\u00ed \u0159\u00edzen\u00ed procesu<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

                            \u00davahy o konkr\u00e9tn\u00edm materi\u00e1lu<\/h2>\n\n\n\n

                            K\u0159em\u00edk (Si)<\/h3>\n\n\n\n
                              \n
                            • Relativn\u011b snadn\u00e9 kostkov\u00e1n\u00ed<\/li>\n\n\n\n
                            • Zam\u011b\u0159en\u00ed na propustnost a optimalizaci n\u00e1klad\u016f<\/li>\n<\/ul>\n\n\n\n

                              Karbid k\u0159em\u00edku (SiC)<\/h3>\n\n\n\n
                                \n
                              • Extr\u00e9mn\u011b tvrd\u00e9 a k\u0159ehk\u00e9<\/li>\n\n\n\n
                              • Vy\u017eaduje laser nebo specializovan\u00e9 no\u017ee<\/li>\n<\/ul>\n\n\n\n

                                Sapphire<\/h3>\n\n\n\n
                                  \n
                                • Vysok\u00e9 riziko zlomenin<\/li>\n\n\n\n
                                • Pot\u0159ebuje p\u0159esnou kontrolu parametr\u016f<\/li>\n<\/ul>\n\n\n\n

                                  Osv\u011bd\u010den\u00e9 postupy optimalizace proces\u016f<\/h2>\n\n\n\n

                                  Dosa\u017een\u00ed vysok\u00e9 v\u00fdt\u011b\u017enosti p\u0159i dicingu 300mm desti\u010dek:<\/p>\n\n\n\n

                                    \n
                                  • \u2714 Optimalizovat expozice ost\u0159\u00ed a frekvence obvaz\u016f<\/strong><\/li>\n\n\n\n
                                  • \u2714 Z\u00e1pas rychlost posuvu v z\u00e1vislosti na tvrdosti materi\u00e1lu<\/strong><\/li>\n\n\n\n
                                  • \u2714 Pou\u017eijte vysoce kvalitn\u00ed kr\u00e1jec\u00ed p\u00e1sky<\/strong><\/li>\n\n\n\n
                                  • \u2714 Udr\u017eovat \u010dist\u00e9 chladic\u00ed syst\u00e9my<\/strong><\/li>\n\n\n\n
                                  • \u2714 Monitor vibrace a h\u00e1zivost v\u0159etena<\/strong><\/li>\n<\/ul>\n\n\n\n

                                    Trendy v odv\u011btv\u00ed (2026)<\/h2>\n\n\n\n
                                      \n
                                    • St\u00e1le \u010dast\u011bj\u0161\u00ed p\u0159ij\u00edm\u00e1n\u00ed laserov\u00e9 a hybridn\u00ed dicing<\/strong><\/li>\n\n\n\n
                                    • R\u016fst \u0158\u00edzen\u00ed proces\u016f pomoc\u00ed um\u011bl\u00e9 inteligence<\/strong><\/li>\n\n\n\n
                                    • Rostouc\u00ed popt\u00e1vka po Dikov\u00e1n\u00ed SiC a polovodi\u010dov\u00fdch slou\u010denin<\/strong><\/li>\n\n\n\n
                                    • Integrace s pokro\u010dil\u00e9 pracovn\u00ed postupy balen\u00ed<\/strong><\/li>\n<\/ul>\n\n\n\n

                                      Z\u00e1v\u011br<\/h2>\n\n\n\n

                                      Odd\u011blov\u00e1n\u00ed 300mm desti\u010dek ji\u017e nen\u00ed pouh\u00fdm mechanick\u00fdm odd\u011blen\u00edm - jedn\u00e1 se o p\u0159esn\u00fd proces, kter\u00fd m\u00e1 p\u0159\u00edm\u00fd vliv na v\u00fdt\u011b\u017enost, spolehlivost a n\u00e1klady.<\/p>\n\n\n\n

                                      V\u00fdrobci, kte\u0159\u00ed v t\u00e9to f\u00e1zi usp\u011bj\u00ed, obvykle:<\/p>\n\n\n\n

                                        \n
                                      • Kombinovat modern\u00ed za\u0159\u00edzen\u00ed + optimalizovan\u00e9 parametry procesu<\/strong><\/li>\n\n\n\n
                                      • P\u0159izp\u016fsobte se v\u00fdzvy specifick\u00e9 pro dan\u00fd materi\u00e1l<\/strong><\/li>\n\n\n\n
                                      • Investujte do automatizace a monitorov\u00e1n\u00ed v re\u00e1ln\u00e9m \u010dase<\/strong><\/li>\n<\/ul>\n\n\n\n

                                        Vzhledem k tomu, \u017ee velikost desti\u010dek z\u016fst\u00e1v\u00e1 na 300 mm a materi\u00e1ly se st\u00e1vaj\u00ed slo\u017eit\u011bj\u0161\u00edmi, bude se technologie dicingu nad\u00e1le vyv\u00edjet sm\u011brem k vy\u0161\u0161\u00ed p\u0159esnosti, ni\u017e\u0161\u00edmu po\u0161kozen\u00ed a inteligentn\u011bj\u0161\u00edmu \u0159\u00edzen\u00ed procesu.<\/p>","protected":false},"excerpt":{"rendered":"

                                        As the semiconductor industry continues shifting toward high-volume manufacturing on 300mm wafers, dicing has become one of the most critical\u2014and increasingly complex\u2014back-end processes. Compared to smaller wafers, 300mm substrates introduce higher mechanical stress, tighter tolerances, and greater yield risk, especially when processing advanced materials like silicon carbide (SiC), sapphire, and ultra-thin silicon. This guide explains […]<\/p>\n","protected":false},"author":1,"featured_media":2445,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"footnotes":""},"categories":[24],"tags":[1316,370,918,1314,1315,1088,1313],"class_list":["post-2444","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-industry-news","tag-300mm-wafer-dicing","tag-laser-dicing","tag-sapphire-wafer-dicing","tag-semiconductor-dicing","tag-sic-wafer-cutting","tag-wafer-dicing-machine","tag-wafer-dicing-process"],"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts\/2444","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/comments?post=2444"}],"version-history":[{"count":1,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts\/2444\/revisions"}],"predecessor-version":[{"id":2446,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts\/2444\/revisions\/2446"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/media\/2445"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/media?parent=2444"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/categories?post=2444"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/tags?post=2444"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}