{"id":2377,"date":"2026-04-22T07:53:59","date_gmt":"2026-04-22T07:53:59","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?p=2377"},"modified":"2026-04-22T07:56:29","modified_gmt":"2026-04-22T07:56:29","slug":"global-ion-implantation-equipment","status":"publish","type":"post","link":"https:\/\/www.zmsh-semitech.com\/cs\/global-ion-implantation-equipment\/","title":{"rendered":"Glob\u00e1ln\u00ed za\u0159\u00edzen\u00ed pro iontovou implantaci: a tr\u017en\u00ed prost\u0159ed\u00ed: technologie, klasifikace a tr\u017en\u00ed prost\u0159ed\u00ed"},"content":{"rendered":"<p>Iontov\u00e1 implantace je jedn\u00edm z nejd\u016fle\u017eit\u011bj\u0161\u00edch proces\u016f p\u0159i v\u00fdrob\u011b polovodi\u010d\u016f. Umo\u017e\u0148uje p\u0159esn\u00e9 \u0159\u00edzen\u00ed elektrick\u00fdch vlastnost\u00ed zav\u00e1d\u011bn\u00edm dopuj\u00edc\u00edch iont\u016f, jako jsou b\u00f3r (B), fosfor (P) a arsen (As), do polovodi\u010dov\u00fdch materi\u00e1l\u016f.<\/p>\n\n\n\n<p>Urychlen\u00edm vysokoenergetick\u00fdch iont\u016f a jejich implantac\u00ed do krystalov\u00e9 m\u0159\u00ed\u017eky ur\u010duje iontov\u00e1 implantace kl\u00ed\u010dov\u00e9 vlastnosti za\u0159\u00edzen\u00ed, v\u010detn\u011b hloubky spoje, vodivosti a prahov\u00e9ho nap\u011bt\u00ed. Jedn\u00e1 se o z\u00e1kladn\u00ed krok p\u0159i vytv\u00e1\u0159en\u00ed p\u0159echod\u016f PN, kter\u00fd se \u0161iroce pou\u017e\u00edv\u00e1 v logick\u00fdch, pam\u011b\u0165ov\u00fdch a v\u00fdkonov\u00fdch polovodi\u010dov\u00fdch za\u0159\u00edzen\u00edch.<\/p>\n\n\n\n<figure class=\"wp-block-image aligncenter size-full\"><img fetchpriority=\"high\" decoding=\"async\" width=\"1000\" height=\"1000\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI350t.png\" alt=\"\" class=\"wp-image-2361\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI350t.png 1000w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI350t-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI350t-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI350t-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI350t-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI350t-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/AI350t-100x100.png 100w\" sizes=\"(max-width: 1000px) 100vw, 1000px\" \/><\/figure>\n\n\n\n<h2 class=\"wp-block-heading\">Proces iontov\u00e9 implantace<\/h2>\n\n\n\n<p>Proces implantace iont\u016f zahrnuje n\u011bkolik kl\u00ed\u010dov\u00fdch f\u00e1z\u00ed:<\/p>\n\n\n\n<ol class=\"wp-block-list\">\n<li>Generov\u00e1n\u00ed iont\u016f<br>Dopantov\u00e9 plyny nebo pevn\u00e9 zdroje jsou v iontov\u00e9m zdroji ionizov\u00e1ny za vzniku nabit\u00fdch \u010d\u00e1stic.<\/li>\n\n\n\n<li>Urychlen\u00ed iont\u016f<br>Ionty jsou urychlov\u00e1ny na definovanou energetickou \u00farove\u0148, kter\u00e1 ur\u010duje hloubku implantace.<\/li>\n\n\n\n<li>Hmotnostn\u00ed anal\u00fdza<br>Magnetick\u00fd analyz\u00e1tor vyb\u00edr\u00e1 po\u017eadovan\u00e9 druhy iont\u016f a zaji\u0161\u0165uje \u010distotu svazku.<\/li>\n\n\n\n<li>Skenov\u00e1n\u00ed a implantace paprsku<br>Iontov\u00fd paprsek se skenuje po povrchu desti\u010dky, aby se dos\u00e1hlo rovnom\u011brn\u00e9 implantace.<\/li>\n<\/ol>\n\n\n\n<p>Po implantaci se desti\u010dka obvykle \u017e\u00edh\u00e1, aby se opravilo po\u0161kozen\u00ed m\u0159\u00ed\u017eky a aktivovaly dopanty. Mezi b\u011b\u017en\u00e9 metody \u017e\u00edh\u00e1n\u00ed pat\u0159\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Rychl\u00e9 tepeln\u00e9 zpracov\u00e1n\u00ed (RTP) p\u0159i 1000-1100 \u00b0C<\/li>\n\n\n\n<li>Laserov\u00e9 \u017e\u00edh\u00e1n\u00ed pro lokalizovan\u00fd oh\u0159ev a sn\u00ed\u017een\u00ed tepeln\u00e9ho rozpo\u010dtu<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">Klasifikace za\u0159\u00edzen\u00ed pro iontovou implantaci<\/h2>\n\n\n\n<h3 class=\"wp-block-heading\">Podle \u00farovn\u011b energie<\/h3>\n\n\n\n<p>Iontov\u00e9 implant\u00e1tory s n\u00edzkou energi\u00ed (&lt;100 keV)<br>Pou\u017e\u00edv\u00e1 se pro velmi m\u011blk\u00e9 spoje, implantaci source\/drain a pokro\u010dil\u00e1 logick\u00e1 za\u0159\u00edzen\u00ed, jako jsou \u010dipy um\u011bl\u00e9 inteligence, procesory, pam\u011bti DRAM a CIS.<\/p>\n\n\n\n<p>Iontov\u00e9 implant\u00e1tory st\u0159edn\u00ed energie (100-300 keV)<br>Pou\u017e\u00edv\u00e1 se pro \u00fapravu prahov\u00e9ho nap\u011bt\u00ed, pro lehce dopovan\u00e9 struktury drain\u016f a pro procesy, jako je SIMOX a Smart Cut.<\/p>\n\n\n\n<p>Iontov\u00e9 implant\u00e1tory s vysokou energi\u00ed (&gt;300 keV)<br>Pou\u017e\u00edv\u00e1 se pro hlubokou implantaci ve v\u00fdkonov\u00fdch za\u0159\u00edzen\u00edch, VF \u010dipech a optick\u00fdch komunika\u010dn\u00edch za\u0159\u00edzen\u00edch, kde umo\u017e\u0148uje mikrometrovou hloubku dopov\u00e1n\u00ed.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">Od Beam Current<\/h3>\n\n\n\n<p>N\u00edzkoproud\u00e9 implant\u00e1tory (100 nA - 100 \u03bcA)<br>Vhodn\u00e9 pro p\u0159esn\u00e9 aplikace vy\u017eaduj\u00edc\u00ed p\u0159esnou kontrolu d\u00e1vky.<\/p>\n\n\n\n<p>St\u0159edn\u011bproud\u00e9 implant\u00e1tory (100 \u03bcA - 2000 \u03bcA)<br>\u0160iroce se pou\u017e\u00edv\u00e1 ve standardn\u00edch v\u00fdrobn\u00edch procesech polovodi\u010d\u016f.<\/p>\n\n\n\n<p>Implant\u00e1tory s vysok\u00fdm proudem (2 mA - 30 mA)<br>Navr\u017eeno pro vysoce v\u00fdkonn\u00e9 aplikace s vysokou d\u00e1vkou, jako je nap\u0159\u00edklad implantace zdroje\/odtoku.<\/p>\n\n\n\n<p>Implant\u00e1tory s velmi vysok\u00fdm proudem (&gt;30 mA)<br>Pou\u017e\u00edv\u00e1 se ve specializovan\u00fdch velkoobjemov\u00fdch nebo vysokod\u00e1vkov\u00fdch v\u00fdrobn\u00edch prost\u0159ed\u00edch.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">Podle speci\u00e1ln\u00ed funkce<\/h3>\n\n\n\n<p>Iontov\u00e9 implant\u00e1tory kysl\u00edku<br>Pou\u017e\u00edv\u00e1 se pro v\u00fdrobu SOI (Silicon-on-Insulator).<\/p>\n\n\n\n<p>Vod\u00edkov\u00e9 iontov\u00e9 implant\u00e1tory<br>Pou\u017eit\u00ed v procesech inteligentn\u00edho \u0159ez\u00e1n\u00ed a materi\u00e1lov\u00e9ho in\u017een\u00fdrstv\u00ed.<\/p>\n\n\n\n<p>Vysokoteplotn\u00ed iontov\u00e9 implant\u00e1tory<br>Umo\u017e\u0148uj\u00ed implantaci p\u0159i zv\u00fd\u0161en\u00fdch teplot\u00e1ch pro materi\u00e1ly, jako je SiC a pokro\u010dil\u00e9 polovodi\u010dov\u00e9 aplikace.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Architektura syst\u00e9mu<\/h2>\n\n\n\n<p>Syst\u00e9m iontov\u00e9 implantace se obvykle skl\u00e1d\u00e1 z p\u011bti hlavn\u00edch subsyst\u00e9m\u016f:<\/p>\n\n\n\n<p>Plynov\u00fd syst\u00e9m<br>Zaji\u0161\u0165uje a bezpe\u010dn\u011b zpracov\u00e1v\u00e1 speci\u00e1ln\u00ed plyny, jako je arsin (AsH\u2083), fosfin (PH\u2083) a trifluorid boru (BF\u2083).<\/p>\n\n\n\n<p>Nap\u00e1jen\u00ed a elektrick\u00fd syst\u00e9m<br>Dod\u00e1v\u00e1 vysokonap\u011b\u0165ov\u00fd proud pro urychlov\u00e1n\u00ed iont\u016f a generov\u00e1n\u00ed magnetick\u00e9ho pole.<\/p>\n\n\n\n<p>Vakuov\u00fd syst\u00e9m<br>Udr\u017euje vysok\u00e9 vakuum, aby se sn\u00ed\u017eil rozptyl iont\u016f a kontaminace, obvykle pomoc\u00ed turbo\u010derpadel a kryogenn\u00edch v\u00fdv\u011bv.<\/p>\n\n\n\n<p>\u0158\u00eddic\u00ed syst\u00e9m<br>Spravuje parametry svazku, manipulaci s desti\u010dkami a automatizaci procesu.<\/p>\n\n\n\n<p>Syst\u00e9m Beamline<br>Z\u00e1kladn\u00ed vybaven\u00ed, v\u010detn\u011b:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Zdroj iont\u016f<\/li>\n\n\n\n<li>Extrak\u010dn\u00ed syst\u00e9m<\/li>\n\n\n\n<li>Hmotnostn\u00ed analyz\u00e1tor<\/li>\n\n\n\n<li>Zrychlovac\u00ed trubice<\/li>\n\n\n\n<li>Syst\u00e9m skenov\u00e1n\u00ed paprsku<\/li>\n\n\n\n<li>Procesn\u00ed komora<\/li>\n<\/ul>\n\n\n\n<p>Tento syst\u00e9m ur\u010duje p\u0159esnost implantace, rovnom\u011brnost a celkov\u00fd v\u00fdkon.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">P\u0159ehled trhu<\/h2>\n\n\n\n<p>Podle pr\u016fmyslov\u00fdch \u00fadaj\u016f dos\u00e1hl celosv\u011btov\u00fd trh se za\u0159\u00edzen\u00edmi pro iontovou implantaci v roce 2022 p\u0159ibli\u017en\u011b 20,6 miliardy RMB. Na \u010d\u00ednsk\u00fd trh p\u0159ipadalo p\u0159ibli\u017en\u011b 6,6 miliardy RMB, co\u017e p\u0159edstavovalo p\u0159ibli\u017en\u011b 32 % celosv\u011btov\u00e9ho trhu.<\/p>\n\n\n\n<p>Z hlediska segmentace:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Na trhu dominuj\u00ed vysokoproud\u00e9 implant\u00e1tory, kter\u00e9 tvo\u0159\u00ed p\u0159ibli\u017en\u011b 61 %.<\/li>\n\n\n\n<li>St\u0159edn\u011bdob\u00e9 implant\u00e1ty tvo\u0159\u00ed asi 20 procent.<\/li>\n\n\n\n<li>Zb\u00fdvaj\u00edc\u00ed pod\u00edl p\u0159ipad\u00e1 na vysokoenergetick\u00e9 a specializovan\u00e9 syst\u00e9my.<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">Glob\u00e1ln\u00ed konkuren\u010dn\u00ed prost\u0159ed\u00ed<\/h2>\n\n\n\n<p>Trh se za\u0159\u00edzen\u00edmi pro iontovou implantaci je vysoce koncentrovan\u00fd a dominuje mu n\u011bkolik p\u0159edn\u00edch mezin\u00e1rodn\u00edch spole\u010dnost\u00ed.<\/p>\n\n\n\n<p>Aplikovan\u00e9 materi\u00e1ly<br>M\u00e1 v\u00edce ne\u017e 50procentn\u00ed pod\u00edl na celosv\u011btov\u00e9m trhu. Do jej\u00edho portfolia pat\u0159\u00ed vysokoproud\u00e9, st\u0159edn\u011bproud\u00e9 a ultravysokod\u00e1vkov\u00e9 syst\u00e9my iontov\u00e9 implantace. Spole\u010dnost pos\u00edlila svou pozici akvizic\u00ed spole\u010dnosti Varian Semiconductor.<\/p>\n\n\n\n<p>Axcelis Technologies<br>P\u0159edn\u00ed dodavatel vysokoenergetick\u00fdch iontov\u00fdch implant\u00e1tor\u016f s p\u0159ibli\u017en\u011b 55% pod\u00edlem na trhu v tomto segmentu. Spole\u010dnost vyk\u00e1zala dobr\u00e9 finan\u010dn\u00ed v\u00fdsledky a pokra\u010duje v expanzi v oblasti v\u00fdkonov\u00fdch polovodi\u010dov\u00fdch aplikac\u00ed.<\/p>\n\n\n\n<p>Iontov\u00e1 za\u0159\u00edzen\u00ed Nissin<br>Zam\u011b\u0159uje se na st\u0159edn\u011bproud\u00e9 iontov\u00e9 implant\u00e1tory a pod\u00edl\u00ed se na n\u011bkolika polovodi\u010dov\u00fdch projektech v \u010c\u00edn\u011b.<\/p>\n\n\n\n<p>Sumitomo Heavy Industries<br>Vyr\u00e1b\u00ed p\u0159edev\u0161\u00edm st\u0159edn\u011bproud\u00e9 syst\u00e9my iontov\u00e9 implantace.<\/p>\n\n\n\n<p>SEN Corporation<br>Nab\u00edz\u00ed celou \u0159adu za\u0159\u00edzen\u00ed pro iontovou implantaci, v\u010detn\u011b vysokoproud\u00fdch, st\u0159edn\u011bproud\u00fdch a vysokoenergetick\u00fdch syst\u00e9m\u016f, av\u0161ak s relativn\u011b ni\u017e\u0161\u00edm pod\u00edlem na trhu v pevninsk\u00e9 \u010c\u00edn\u011b.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Rozvoj dom\u00e1c\u00edch v\u00fdrobc\u016f<\/h2>\n\n\n\n<p>\u010c\u00edn\u0161t\u00ed v\u00fdrobci polovodi\u010dov\u00fdch za\u0159\u00edzen\u00ed dos\u00e1hli v posledn\u00edch letech v\u00fdznamn\u00e9ho pokroku. Nap\u0159\u00edklad 12palcov\u00fd n\u00edzkoteplotn\u00ed iontov\u00fd implant\u00e1tor vyvinut\u00fd dom\u00e1c\u00ed spole\u010dnost\u00ed byl \u00fasp\u011b\u0161n\u011b dod\u00e1n p\u0159edn\u00edmu v\u00fdrobci logick\u00fdch \u010dip\u016f.<\/p>\n\n\n\n<p>M\u00edstn\u00ed spole\u010dnosti aktivn\u011b vyv\u00edjej\u00ed vysokoproud\u00e9, st\u0159edn\u011bproud\u00e9 a vysokoenergetick\u00e9 syst\u00e9my iontov\u00e9 implantace. A\u010dkoli na dom\u00e1c\u00edm trhu st\u00e1le dominuj\u00ed mezin\u00e1rodn\u00ed dodavatel\u00e9, \u010d\u00edn\u0161t\u00ed v\u00fdrobci postupn\u011b dosahuj\u00ed validace proces\u016f a zav\u00e1d\u011bj\u00ed pokro\u010dil\u00e9 v\u00fdrobn\u00ed linky.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Z\u00e1v\u011br<\/h2>\n\n\n\n<p>Iontov\u00e1 implantace z\u016fst\u00e1v\u00e1 kl\u00ed\u010dovou technologi\u00ed p\u0159i v\u00fdrob\u011b polovodi\u010d\u016f, kter\u00e1 p\u0159\u00edmo ovliv\u0148uje v\u00fdkon a v\u00fdt\u011b\u017enost za\u0159\u00edzen\u00ed. S rychl\u00fdm rozvojem pokro\u010dil\u00fdch uzl\u016f, materi\u00e1l\u016f s \u0161irok\u00fdm p\u00e1smem, jako je SiC, a vysoce v\u00fdkonn\u00fdch v\u00fdpo\u010detn\u00edch aplikac\u00ed se popt\u00e1vka po pokro\u010dil\u00fdch technologi\u00edch zvy\u0161uje. <a href=\"https:\/\/www.zmsh-semitech.com\/cs\/kategorie-produktu\/ion-implantation-equipment\/\"><mark style=\"background-color:rgba(0, 0, 0, 0);color:#0693e3\" class=\"has-inline-color\">za\u0159\u00edzen\u00ed pro iontovou implantaci<\/mark><\/a> st\u00e1le roste.<\/p>\n\n\n\n<p>Zat\u00edmco glob\u00e1ln\u00ed trh je st\u00e1le veden zaveden\u00fdmi mezin\u00e1rodn\u00edmi hr\u00e1\u010di, prob\u00edhaj\u00edc\u00ed technologick\u00fd pokrok a lokaliza\u010dn\u00ed \u00fasil\u00ed m\u011bn\u00ed konkuren\u010dn\u00ed prost\u0159ed\u00ed, zejm\u00e9na na rozv\u00edjej\u00edc\u00edch se trz\u00edch polovodi\u010d\u016f.<\/p>\n\n\n\n<p><\/p>","protected":false},"excerpt":{"rendered":"<p>Ion implantation is one of the most critical processes in semiconductor manufacturing. It enables precise control of electrical properties by introducing dopant ions such as boron (B), phosphorus (P), and arsenic (As) into semiconductor materials. By accelerating high-energy ions and implanting them into the crystal lattice, ion implantation defines key device characteristics, including junction depth, [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":2361,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"footnotes":""},"categories":[24],"tags":[1210,1204,1206,706,1200,1201,1205,1203,1202,1211,36,1207,916,1208,1209],"class_list":["post-2377","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-industry-news","tag-cmos-fabrication","tag-high-current-ion-implantation","tag-high-energy-ion-implantation","tag-ion-implantation","tag-ion-implantation-equipment","tag-ion-implanter","tag-medium-current-ion-implanter","tag-pn-junction-formation","tag-semiconductor-doping","tag-semiconductor-equipment-market","tag-semiconductor-manufacturing","tag-sic-semiconductor-processing","tag-silicon-wafer-processing","tag-smart-cut-process","tag-soi-technology"],"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts\/2377","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/comments?post=2377"}],"version-history":[{"count":1,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts\/2377\/revisions"}],"predecessor-version":[{"id":2378,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts\/2377\/revisions\/2378"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/media\/2361"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/media?parent=2377"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/categories?post=2377"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/tags?post=2377"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}