{"id":2280,"date":"2026-04-17T02:27:09","date_gmt":"2026-04-17T02:27:09","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?p=2280"},"modified":"2026-04-17T02:28:35","modified_gmt":"2026-04-17T02:28:35","slug":"technologie-tgv-pro-pokrocile-baleni","status":"publish","type":"post","link":"https:\/\/www.zmsh-semitech.com\/cs\/tgv-technology-for-advanced-packaging\/","title":{"rendered":"Technologie TGV (Through Glass Via) pro pokro\u010dil\u00e9 obaly"},"content":{"rendered":"<h2 class=\"wp-block-heading\">1. \u00davod: Kontext odv\u011btv\u00ed a technick\u00e9 pozad\u00ed<\/h2>\n\n\n\n<p>Neust\u00e1l\u00e1 popt\u00e1vka po vy\u0161\u0161\u00ed \u0161\u00ed\u0159ce p\u00e1sma, ni\u017e\u0161\u00edch ztr\u00e1t\u00e1ch sign\u00e1lu a lep\u0161\u00ed tepeln\u00e9 stabilit\u011b vede v oblasti modern\u00edch polovodi\u010dov\u00fdch obal\u016f k p\u0159echodu od tradi\u010dn\u00edch organick\u00fdch substr\u00e1t\u016f k pokro\u010dilej\u0161\u00edm propojovac\u00edm materi\u00e1l\u016fm.<\/p>\n\n\n\n<p>Na z\u00e1klad\u011b pozorovan\u00fdch trend\u016f pr\u016fmyslov\u00e9ho v\u00fdvoje v oblasti modern\u00edch obal\u016f a v\u00fdrobn\u00edch linek substr\u00e1t\u016f vykazuj\u00ed sklen\u011bn\u00e9 substr\u00e1ty st\u00e1le v\u011bt\u0161\u00ed potenci\u00e1l ve vysokofrekven\u010dn\u00edch aplikac\u00edch a aplikac\u00edch s vysokou hustotou d\u00edky sv\u00fdm:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>N\u00edzk\u00e1 dielektrick\u00e1 konstanta (Dk)<\/li>\n\n\n\n<li>N\u00edzk\u00e9 dielektrick\u00e9 ztr\u00e1ty (Df)<\/li>\n\n\n\n<li>Vysok\u00e1 rozm\u011brov\u00e1 stabilita<\/li>\n\n\n\n<li>Vynikaj\u00edc\u00ed elektrick\u00e9 izola\u010dn\u00ed vlastnosti<\/li>\n<\/ul>\n\n\n\n<p>Mezi propojovac\u00edmi technologiemi na b\u00e1zi skla se technologie TGV (Through Glass Via) stala kl\u00ed\u010dov\u00fdm \u0159e\u0161en\u00edm pro obalov\u00e9 architektury nov\u00e9 generace, v\u010detn\u011b 2,5D interposer\u016f, RF modul\u016f a vysoce v\u00fdkonn\u00fdch v\u00fdpo\u010detn\u00edch syst\u00e9m\u016f.<\/p>\n\n\n\n<figure class=\"wp-block-image aligncenter size-large\"><img fetchpriority=\"high\" decoding=\"async\" width=\"1024\" height=\"1024\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Through-Glass-Via-TGV-Technology-for-Advanced-Packaging-1024x1024.jpg\" alt=\"\" class=\"wp-image-2281\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Through-Glass-Via-TGV-Technology-for-Advanced-Packaging-1024x1024.jpg 1024w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Through-Glass-Via-TGV-Technology-for-Advanced-Packaging-300x300.jpg 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Through-Glass-Via-TGV-Technology-for-Advanced-Packaging-150x150.jpg 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Through-Glass-Via-TGV-Technology-for-Advanced-Packaging-768x768.jpg 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Through-Glass-Via-TGV-Technology-for-Advanced-Packaging-12x12.jpg 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Through-Glass-Via-TGV-Technology-for-Advanced-Packaging-600x600.jpg 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Through-Glass-Via-TGV-Technology-for-Advanced-Packaging-100x100.jpg 100w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Through-Glass-Via-TGV-Technology-for-Advanced-Packaging.jpg 1120w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/figure>\n\n\n\n<h2 class=\"wp-block-heading\">2. Technick\u00e1 definice TGV (Through Glass Via)<\/h2>\n\n\n\n<p><strong>P\u0159es sklo (TGV)<\/strong> ozna\u010duje vertik\u00e1ln\u00ed propojovac\u00ed strukturu vytvo\u0159enou vytvo\u0159en\u00edm mikrom\u011b\u0159\u00edtkov\u00fdch pr\u016fchodek ve sklen\u011bn\u00e9m substr\u00e1tu a n\u00e1slednou metalizac\u00ed pro vytvo\u0159en\u00ed elektrick\u00e9ho spojen\u00ed mezi ob\u011bma povrchy.<\/p>\n\n\n\n<p>Z v\u00fdrobn\u00edho hlediska nen\u00ed TGV jedin\u00fd proces, ale v\u00edcestup\u0148ov\u00fd integrovan\u00fd syst\u00e9m kombinuj\u00edc\u00ed technologie laserov\u00e9 modifikace, mokr\u00e9ho lept\u00e1n\u00ed, metalizace, galvanizace a planarizace.<\/p>\n\n\n\n<p>V porovn\u00e1n\u00ed s k\u0159em\u00edkovou pr\u016fchodkovou technologi\u00ed (TSV) poskytuje TGV:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Ni\u017e\u0161\u00ed \u00fatlum RF sign\u00e1lu<\/li>\n\n\n\n<li>Sn\u00ed\u017een\u00e1 parazitn\u00ed kapacita<\/li>\n\n\n\n<li>Vylep\u0161en\u00e1 stabilita vysokofrekven\u010dn\u00edho p\u0159enosu<\/li>\n\n\n\n<li>Zv\u00fd\u0161en\u00e1 kontrola rozm\u011br\u016f na \u00farovni desti\u010dek<\/li>\n\n\n\n<li>Lep\u0161\u00ed kompatibilita optick\u00e9 a elektrick\u00e9 integrace<\/li>\n<\/ul>\n\n\n\n<p>D\u00edky t\u011bmto vlastnostem je TGV zvl\u00e1\u0161t\u011b vhodn\u00fd pro RF front-end moduly, AI obalov\u00e9 interposery a optoelektronick\u00e9 integra\u010dn\u00ed platformy.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">3. In\u017een\u00fdrsk\u00e9 schopnosti p\u0159i formov\u00e1n\u00ed (pohled na \u00farovni procesu)<\/h2>\n\n\n\n<p>V pr\u016fmyslov\u00e9 v\u00fdrob\u011b se vytv\u00e1\u0159en\u00ed pr\u016fchodek TGV obvykle prov\u00e1d\u00ed hybridn\u00edm procesem laserov\u00e9 modifikace a chemick\u00e9ho lept\u00e1n\u00ed.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">3.1 Schopnost struktur\u00e1ln\u00edho zpracov\u00e1n\u00ed<\/h3>\n\n\n\n<p>Sou\u010dasn\u00fd rozsah vysp\u011bl\u00fdch procesn\u00edch schopnost\u00ed zahrnuje:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li><strong>Pom\u011br stran a\u017e 15:1<\/strong><br>Podpora tvorby hlubok\u00fdch pr\u016fchod\u016f v tenk\u00fdch sklen\u011bn\u00fdch substr\u00e1tech.<\/li>\n\n\n\n<li><strong>Rozsah tlou\u0161\u0165ky skla: 0,2 mm a\u017e 1,5 mm<\/strong><br>Pokr\u00fdv\u00e1 ultratenk\u00e1 za\u0159\u00edzen\u00ed a standardn\u00ed platformy interposer\u016f.<\/li>\n\n\n\n<li><strong>Vysok\u00e1 geometrick\u00e1 p\u0159esnost \u0159\u00edzen\u00ed:<\/strong>\n<ul class=\"wp-block-list\">\n<li>Circularity &gt; 95%<\/li>\n\n\n\n<li>Pom\u011br pasu &gt; 0,9<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n\n\n\n<p>Tyto parametry nazna\u010duj\u00ed stabiln\u00ed morfologii pr\u016fchodek, kter\u00e1 je rozhoduj\u00edc\u00ed pro zaji\u0161t\u011bn\u00ed rovnom\u011brn\u00e9 metalizace a minimalizaci kol\u00eds\u00e1n\u00ed elektrick\u00e9ho odporu.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">3.2 In\u017een\u00fdrsk\u00e9 poznatky (zohledn\u011bn\u00ed stability procesu)<\/h3>\n\n\n\n<p>Z hlediska v\u00fdroby je udr\u017een\u00ed konzistence geometrie prost\u0159ednictv\u00edm jednoho z kl\u00ed\u010dov\u00fdch faktor\u016f ur\u010duj\u00edc\u00edch v\u00fdt\u011b\u017enost. Nekonzistentn\u00ed profily pr\u016fchodek mohou v\u00e9st k:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Nerovnom\u011brn\u00e9 nan\u00e1\u0161en\u00ed vrstvy osiva<\/li>\n\n\n\n<li>Vyprazd\u0148ov\u00e1n\u00ed p\u0159i galvanick\u00e9m pokovov\u00e1n\u00ed<\/li>\n\n\n\n<li>Zv\u00fd\u0161en\u00e1 variabilita elektrick\u00e9ho odporu<\/li>\n<\/ul>\n\n\n\n<p>P\u0159esnost laserov\u00e9ho zarovn\u00e1n\u00ed a kontrola izotropie lept\u00e1n\u00ed jsou proto kritick\u00fdmi parametry procesu.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">4. Technologie metalizace a pln\u011bn\u00ed m\u011bd\u00ed<\/h2>\n\n\n\n<p>Metalizace TGV je obecn\u011b pova\u017eov\u00e1na za jeden z technicky nejn\u00e1ro\u010dn\u011bj\u0161\u00edch krok\u016f vzhledem k vysok\u00e9mu pom\u011bru stran a omezen\u00e9 geometrii sklen\u011bn\u00fdch pr\u016fchodek.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">4.1 Proces v\u00edcevrstv\u00e9ho nan\u00e1\u0161en\u00ed m\u011bdi<\/h3>\n\n\n\n<p>Typick\u00fd pr\u016fb\u011bh pr\u016fmyslov\u00e9ho procesu zahrnuje:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Rozpra\u0161ov\u00e1n\u00ed (tvorba z\u00e1rode\u010dn\u00e9 vrstvy)<\/li>\n\n\n\n<li>Elektrolytick\u00e9 nan\u00e1\u0161en\u00ed m\u011bdi<\/li>\n\n\n\n<li>Galvanick\u00e9 pokovov\u00e1n\u00ed (prost\u0159ednictv\u00edm pln\u011bn\u00ed)<\/li>\n\n\n\n<li>Chemicko-mechanick\u00e9 le\u0161t\u011bn\u00ed (CMP)<\/li>\n<\/ul>\n\n\n\n<p>Tento v\u00edcestup\u0148ov\u00fd p\u0159\u00edstup zaji\u0161\u0165uje:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Souvisl\u00e9 vodiv\u00e9 cesty<\/li>\n\n\n\n<li>Rovnom\u011brn\u00e9 rozlo\u017een\u00ed m\u011bdi pod\u00e9l bo\u010dn\u00edch st\u011bn pr\u016fchodek<\/li>\n\n\n\n<li>Stabiln\u00ed elektrick\u00fd v\u00fdkon nap\u0159\u00ed\u010d strukturami na \u00farovni desti\u010dek<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">4.2 V\u00fdzvy procesn\u00edho in\u017een\u00fdrstv\u00ed<\/h3>\n\n\n\n<p>Na z\u00e1klad\u011b charakteristik pr\u016fmyslov\u00fdch proces\u016f pat\u0159\u00ed mezi hlavn\u00ed technick\u00e9 v\u00fdzvy:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Omezen\u00ed transportu hmoty v pr\u016fchodk\u00e1ch s vysok\u00fdm pom\u011brem stran<\/li>\n\n\n\n<li>Rovnom\u011brnost rozlo\u017een\u00ed iont\u016f p\u0159i galvanick\u00e9m pokovov\u00e1n\u00ed<\/li>\n\n\n\n<li>Akumulace nap\u011bt\u00ed p\u0159i depozici m\u011bdi<\/li>\n\n\n\n<li>Spolehlivost adheze rozhran\u00ed mezi vrstvami skla a kovu<\/li>\n<\/ul>\n\n\n\n<p>Ke zm\u00edrn\u011bn\u00ed t\u011bchto \u00fa\u010dink\u016f je obvykle zapot\u0159eb\u00ed pokro\u010dil\u00fd n\u00e1vrh pokovovac\u00edho syst\u00e9mu a optimalizace pr\u016ftokov\u00e9ho pole.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">5. Architektura syst\u00e9mu za\u0159\u00edzen\u00ed a integrace proces\u016f<\/h2>\n\n\n\n<p>V pr\u016fmyslov\u00fdch v\u00fdrobn\u00edch link\u00e1ch TGV v\u00fdkon za\u0159\u00edzen\u00ed p\u0159\u00edmo ur\u010duje v\u00fdt\u011b\u017enost procesu, zejm\u00e9na v mokr\u00e9m prost\u0159ed\u00ed.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">5.1 Syst\u00e9m su\u0161en\u00ed a kontroly vad<\/h3>\n\n\n\n<p>Po mokr\u00fdch kroc\u00edch zpracov\u00e1n\u00ed se pou\u017e\u00edvaj\u00ed syst\u00e9my su\u0161en\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Sn\u00ed\u017een\u00ed vzniku mikrotrhlin zp\u016fsoben\u00fdch zbytky kapaliny<\/li>\n\n\n\n<li>Zlep\u0161en\u00ed struktur\u00e1ln\u00ed stability leptan\u00fdch pr\u016fchodek<\/li>\n\n\n\n<li>Zv\u00fd\u0161en\u00ed celkov\u00e9 v\u00fdt\u011b\u017enosti v procesech po lept\u00e1n\u00ed<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">5.2 Optimalizace procesu v\u00fdroby m\u011bdi a mechanick\u00e9 spolehlivosti<\/h3>\n\n\n\n<p>Procesn\u00ed za\u0159\u00edzen\u00ed souvisej\u00edc\u00ed s m\u011bd\u00ed p\u0159isp\u00edvaj\u00ed k:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Sn\u00ed\u017een\u00ed mechanick\u00e9ho po\u0161kozen\u00ed p\u0159i le\u0161t\u011bn\u00ed<\/li>\n\n\n\n<li>Zlep\u0161en\u00e1 p\u0159ilnavost mezi vrstvami<\/li>\n\n\n\n<li>Zv\u00fd\u0161en\u00e1 spolehlivost p\u0159i tepeln\u00e9m cyklov\u00e1n\u00ed<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">5.3 P\u0159esn\u00e9 \u0159\u00edzen\u00ed laserov\u00e9 modifikace<\/h3>\n\n\n\n<p>Laserov\u00e9 syst\u00e9my pou\u017e\u00edvan\u00e9 p\u0159i tvorb\u011b TGV poskytuj\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Stabiln\u00ed cesty modifikace v k\u0159ehk\u00fdch sklen\u011bn\u00fdch materi\u00e1lech<\/li>\n\n\n\n<li>Vysok\u00e1 kolmost bo\u010dn\u00edch st\u011bn pr\u016fchodek<\/li>\n\n\n\n<li>P\u0159esn\u00e9 zarovn\u00e1n\u00ed polohy na velkoplo\u0161n\u00fdch substr\u00e1tech<\/li>\n<\/ul>\n\n\n\n<p>Tyto faktory v\u00fdznamn\u011b ovliv\u0148uj\u00ed rovnom\u011brnost lept\u00e1n\u00ed a \u00fasp\u011b\u0161nost metalizace.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">6. Integrovan\u00fd v\u00fdrobn\u00ed proces TGV<\/h2>\n\n\n\n<p>Typick\u00fd pr\u016fmyslov\u00fd v\u00fdrobn\u00ed syst\u00e9m TGV lze rozd\u011blit do t\u0159\u00ed hlavn\u00edch modul\u016f:<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">6.1 Modul Via Formation<\/h3>\n\n\n\n<p>Sekvence procesu:<\/p>\n\n\n\n<p>Laserov\u00e1 modifikace \u2192 Mokr\u00e9 lept\u00e1n\u00ed \u2192 Kontrola AOI<\/p>\n\n\n\n<p>Transformace materi\u00e1lu:<\/p>\n\n\n\n<p>Sklen\u011bn\u00fd substr\u00e1t \u2192 Vysoce p\u0159esn\u00e1 sklen\u011bn\u00e1 pr\u016fchoz\u00ed struktura<\/p>\n\n\n\n<p>Z\u00e1kladn\u00ed vybaven\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Syst\u00e9m lept\u00e1n\u00ed skla (Wet Bench)<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">6.2 Modul metalizace a pln\u011bn\u00ed<\/h3>\n\n\n\n<p>Sekvence procesu:<\/p>\n\n\n\n<p>Rozpra\u0161ov\u00e1n\u00ed \u2192 Bezelektrick\u00e9 pokovov\u00e1n\u00ed \u2192 Galvanick\u00e9 pokovov\u00e1n\u00ed \u2192 CMP<\/p>\n\n\n\n<p>Z\u00e1kladn\u00ed vybaven\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Syst\u00e9m p\u0159ed\u010di\u0161t\u011bn\u00ed mokr\u00fdch stol\u016f<\/li>\n\n\n\n<li>Syst\u00e9m bezelektrick\u00e9ho pokovov\u00e1n\u00ed m\u011bd\u00ed<\/li>\n\n\n\n<li>Oboustrann\u00fd syst\u00e9m galvanick\u00e9ho pokovov\u00e1n\u00ed (stojanov\u00e1 konfigurace pokovov\u00e1n\u00ed)<\/li>\n<\/ul>\n\n\n\n<p>Tento modul ur\u010duje elektrickou vodivost a dlouhodobou spolehlivost.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">6.3 Modul tvorby redistribu\u010dn\u00ed vrstvy (RDL)<\/h3>\n\n\n\n<p>Sekvence procesu:<\/p>\n\n\n\n<p>Nan\u00e1\u0161en\u00ed fotorezist\u016f \u2192 Litografie \u2192 Vyvol\u00e1v\u00e1n\u00ed \u2192 Lept\u00e1n\u00ed<\/p>\n\n\n\n<p>Z\u00e1kladn\u00ed vybaven\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>V\u00fdvojov\u00fd syst\u00e9m mokr\u00e9 lavice<\/li>\n\n\n\n<li>Leptac\u00ed syst\u00e9m UBM (zpracov\u00e1n\u00ed skla na jedn\u00e9 vrstv\u011b)<\/li>\n<\/ul>\n\n\n\n<p>Tato f\u00e1ze umo\u017e\u0148uje bo\u010dn\u00ed propojen\u00ed pro integraci na \u00farovni \u010dipu.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">7. Spolehlivost a v\u00fdrobn\u00ed probl\u00e9my<\/h2>\n\n\n\n<p>Navzdory sv\u00fdm v\u00fdhod\u00e1m se technologie TGV st\u00e1le pot\u00fdk\u00e1 s n\u011bkolika technick\u00fdmi a pr\u016fmyslov\u00fdmi probl\u00e9my:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Kontrola m\u011bd\u011bn\u00fdch dutin s vysok\u00fdm pom\u011brem stran<\/li>\n\n\n\n<li>\u0158\u00edzen\u00ed tepeln\u00e9ho nam\u00e1h\u00e1n\u00ed v k\u0159ehk\u00fdch sklen\u011bn\u00fdch materi\u00e1lech<\/li>\n\n\n\n<li>Potla\u010den\u00ed vzniku mikrotrhlin p\u0159i p\u0159echodu mezi mokr\u00fdm a such\u00fdm prost\u0159ed\u00edm<\/li>\n\n\n\n<li>Kontrola k\u0159\u00ed\u017eov\u00e9 kontaminace v prost\u0159ed\u00ed mokr\u00fdch stol\u016f<\/li>\n\n\n\n<li>Velkoplo\u0161n\u00e1 kontrola rovnom\u011brnosti substr\u00e1tu<\/li>\n<\/ul>\n\n\n\n<p>Z hlediska pr\u016fmyslov\u00e9 v\u00fdt\u011b\u017enosti se tyto probl\u00e9my \u0159e\u0161\u00ed p\u0159edev\u0161\u00edm optimalizac\u00ed na \u00farovni za\u0159\u00edzen\u00ed a integrac\u00ed proces\u016f, nikoli zlep\u0161en\u00edm jednotliv\u00fdch krok\u016f.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">8. V\u00fdvojov\u00e9 trendy a v\u00fdhled do budoucna<\/h2>\n\n\n\n<p>Na z\u00e1klad\u011b sou\u010dasn\u00fdch trend\u016f v\u00fdvoje obal\u016f pro polovodi\u010de se o\u010dek\u00e1v\u00e1, \u017ee technologie TGV se bude vyv\u00edjet sm\u011brem k:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Pom\u011br stran v\u011bt\u0161\u00ed ne\u017e 20:1<\/li>\n\n\n\n<li>Pln\u011b automatizovan\u00e9 platformy pro integraci mokr\u00fdch proces\u016f<\/li>\n\n\n\n<li>M\u011bd\u011bn\u00e9 v\u00fdpl\u0148ov\u00e9 materi\u00e1ly a bari\u00e9rov\u00e9 syst\u00e9my s n\u00edzk\u00fdm nam\u00e1h\u00e1n\u00edm<\/li>\n\n\n\n<li>Vysokofrekven\u010dn\u00ed (RF\/mmWave) optimalizovan\u00e9 struktury interposer\u016f<\/li>\n\n\n\n<li>Integrace v\u00fdpo\u010detn\u00ed techniky AI a balen\u00ed HPC<\/li>\n<\/ul>\n\n\n\n<p>O\u010dek\u00e1v\u00e1 se, \u017ee s rychl\u00fdm rozvojem v\u00fdpo\u010detn\u00ed infrastruktury zalo\u017een\u00e9 na um\u011bl\u00e9 inteligenci se TGV stane kl\u00ed\u010dovou technologi\u00ed v pokro\u010dil\u00fdch obalov\u00fdch ekosyst\u00e9mech p\u0159\u00ed\u0161t\u00ed generace.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">9. Z\u00e1v\u011br<\/h2>\n\n\n\n<p><a href=\"https:\/\/www.zmsh-semitech.com\/cs\/kategorie-produktu\/laser-drilling-machine\/\"><mark style=\"background-color:rgba(0, 0, 0, 0);color:#0693e3\" class=\"has-inline-color\">Technologie Through Glass Via (TGV) <\/mark><\/a>p\u0159edstavuje z\u00e1sadn\u00ed pokrok v in\u017een\u00fdrstv\u00ed polovodi\u010dov\u00fdch propojen\u00ed a m\u011bn\u00ed sklen\u011bn\u00e9 substr\u00e1ty z pasivn\u00edch izola\u010dn\u00edch materi\u00e1l\u016f na funk\u010dn\u00ed propojovac\u00ed platformy s vysokou hustotou.<\/p>\n\n\n\n<p>Mezi jeho hlavn\u00ed technick\u00e9 v\u00fdhody pat\u0159\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Mo\u017enost vertik\u00e1ln\u00edho propojen\u00ed s vysokou hustotou<\/li>\n\n\n\n<li>Vynikaj\u00edc\u00ed RF a elektrick\u00fd v\u00fdkon<\/li>\n\n\n\n<li>Vynikaj\u00edc\u00ed rozm\u011brov\u00e1 stabilita<\/li>\n\n\n\n<li>Siln\u00e1 kompatibilita s pokro\u010dil\u00fdmi obalov\u00fdmi architekturami<\/li>\n<\/ul>\n\n\n\n<p>Z pr\u016fmyslov\u00e9ho hlediska z\u00e1vis\u00ed \u00fasp\u011bch implementace TGV do zna\u010dn\u00e9 m\u00edry na integraci syst\u00e9m\u016f laserov\u00e9ho zpracov\u00e1n\u00ed, za\u0159\u00edzen\u00ed pro mokr\u00e9 lept\u00e1n\u00ed a pokro\u010dil\u00fdch galvanick\u00fdch platforem.<\/p>\n\n\n\n<p>Vzhledem k tomu, \u017ee pokro\u010dil\u00e9 balen\u00ed se st\u00e1le vyv\u00edj\u00ed sm\u011brem k vy\u0161\u0161\u00edm v\u00fdkon\u016fm a ni\u017e\u0161\u00edm po\u017eadavk\u016fm na ztr\u00e1ty sign\u00e1lu, o\u010dek\u00e1v\u00e1 se, \u017ee TGV bude hr\u00e1t st\u00e1le d\u016fle\u017eit\u011bj\u0161\u00ed roli v syst\u00e9mech integrace um\u011bl\u00e9 inteligence, r\u00e1diov\u00fdch frekvenc\u00ed a optoelektroniky.<\/p>","protected":false},"excerpt":{"rendered":"<p>1. Introduction: Industry Context and Engineering Background In advanced semiconductor packaging, the continuous demand for higher bandwidth, lower signal loss, and improved thermal stability is driving a transition from traditional organic substrates toward more advanced interconnect materials. Based on observed industrial development trends in advanced packaging and substrate manufacturing lines, glass substrates have increasingly demonstrated [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":2281,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"footnotes":""},"categories":[24],"tags":[1107,1112,1106,1108,1110,1111,1109,1105,1104,1113],"class_list":["post-2280","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-industry-news","tag-advanced-semiconductor-packaging","tag-ai-chip-packaging-interposer","tag-glass-interposer-technology","tag-high-aspect-ratio-glass-via","tag-laser-drilling-glass-via-process","tag-rf-glass-substrate-interconnect","tag-tgv-electroplating-system","tag-tgv-manufacturing-process","tag-through-glass-via-technology","tag-wet-bench-tgv-process-equipment"],"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts\/2280","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/comments?post=2280"}],"version-history":[{"count":1,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts\/2280\/revisions"}],"predecessor-version":[{"id":2282,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts\/2280\/revisions\/2282"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/media\/2281"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/media?parent=2280"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/categories?post=2280"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/tags?post=2280"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}