{"id":2162,"date":"2026-04-13T05:49:11","date_gmt":"2026-04-13T05:49:11","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?p=2162"},"modified":"2026-04-13T05:49:16","modified_gmt":"2026-04-13T05:49:16","slug":"laser-dicing-vs-mechanical-saw-in-semiconductor-manufacturing","status":"publish","type":"post","link":"https:\/\/www.zmsh-semitech.com\/cs\/laser-dicing-vs-mechanical-saw-in-semiconductor-manufacturing\/","title":{"rendered":"Laserov\u00e9 dicing vs. mechanick\u00e1 pila p\u0159i v\u00fdrob\u011b polovodi\u010d\u016f"},"content":{"rendered":"<h2 class=\"wp-block-heading\">1. \u00davod<\/h2>\n\n\n\n<p>Roz\u0159ez\u00e1v\u00e1n\u00ed desti\u010dek (naz\u00fdvan\u00e9 tak\u00e9 singulace desti\u010dek) je d\u016fle\u017eit\u00fdm krokem p\u0159i v\u00fdrob\u011b polovodi\u010d\u016f, kdy se zpracovan\u00e9 k\u0159em\u00edkov\u00e9 nebo slo\u017een\u00e9 polovodi\u010dov\u00e9 desti\u010dky rozd\u011bluj\u00ed na jednotliv\u00e9 matrice. Se zmen\u0161ov\u00e1n\u00edm geometrie za\u0159\u00edzen\u00ed a diverzifikac\u00ed materi\u00e1l\u016f, jako je karbid k\u0159em\u00edku (SiC), nitrid galia (GaN) a saf\u00edr, je volba technologie dicingu st\u00e1le d\u016fle\u017eit\u011bj\u0161\u00ed.<\/p>\n\n\n\n<p>V sou\u010dasn\u00e9 dob\u011b se b\u011b\u017en\u011b pou\u017e\u00edvaj\u00ed dva dominantn\u00ed p\u0159\u00edstupy:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Mechanick\u00e9 kr\u00e1jen\u00ed na kostky (\u0159ez\u00e1n\u00ed diamantov\u00fdm kotou\u010dem)<\/li>\n\n\n\n<li>Laserov\u00e9 dicing (laserov\u00e1 ablace nebo stealth separace)<\/li>\n<\/ul>\n\n\n\n<p>Ka\u017ed\u00e1 metoda m\u00e1 odli\u0161n\u00e9 fyzick\u00e9 mechanismy, procesn\u00ed omezen\u00ed a oblasti pou\u017eit\u00ed. Tento \u010dl\u00e1nek poskytuje v\u011bdeck\u00e9 srovn\u00e1n\u00ed obou technologi\u00ed z hlediska princip\u016f, v\u00fdkonu a pr\u016fmyslov\u00e9 vhodnosti.<\/p>\n\n\n\n<figure class=\"wp-block-image aligncenter size-large\"><img fetchpriority=\"high\" decoding=\"async\" width=\"1024\" height=\"683\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Laser-Dicing-vs-Mechanical-Saw-in-Semiconductor-Manufacturing-1024x683.png\" alt=\"\" class=\"wp-image-2164\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Laser-Dicing-vs-Mechanical-Saw-in-Semiconductor-Manufacturing-1024x683.png 1024w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Laser-Dicing-vs-Mechanical-Saw-in-Semiconductor-Manufacturing-300x200.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Laser-Dicing-vs-Mechanical-Saw-in-Semiconductor-Manufacturing-768x512.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Laser-Dicing-vs-Mechanical-Saw-in-Semiconductor-Manufacturing-18x12.png 18w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Laser-Dicing-vs-Mechanical-Saw-in-Semiconductor-Manufacturing-600x400.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Laser-Dicing-vs-Mechanical-Saw-in-Semiconductor-Manufacturing.png 1536w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/figure>\n\n\n\n<h2 class=\"wp-block-heading\">2. Z\u00e1kladn\u00ed principy pr\u00e1ce<\/h2>\n\n\n\n<h2 class=\"wp-block-heading\">2.1 Mechanick\u00e9 d\u011blen\u00ed desti\u010dek (diamantov\u00e9 \u0159ez\u00e1n\u00ed)<\/h2>\n\n\n\n<p>P\u0159i mechanick\u00e9m kr\u00e1jen\u00ed se pou\u017e\u00edv\u00e1 vysokorychlostn\u00ed rotuj\u00edc\u00ed v\u0159eteno vybaven\u00e9 diamantov\u00fdm no\u017eem. Desti\u010dka je p\u0159ipevn\u011bna na dicingovou p\u00e1sku a \u0159ez\u00e1na pod\u00e9l p\u0159edem definovan\u00fdch ulic.<\/p>\n\n\n\n<p>Proces se \u0159\u00edd\u00ed \u00fab\u011brem materi\u00e1lu abraz\u00ed a lomovou mechanikou:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Diamantov\u00e9 \u010d\u00e1stice mechanicky po\u0161kr\u00e1bou a rozlom\u00ed desti\u010dku.<\/li>\n\n\n\n<li>Materi\u00e1l je odstra\u0148ov\u00e1n jako jemn\u00e9 ne\u010distoty (v z\u00e1vislosti na syst\u00e9mu jako suspenze nebo such\u00e9 \u010d\u00e1stice).<\/li>\n\n\n\n<li>Chladic\u00ed voda se \u010dasto pou\u017e\u00edv\u00e1 ke sn\u00ed\u017een\u00ed tepeln\u00e9ho a mechanick\u00e9ho nam\u00e1h\u00e1n\u00ed.<\/li>\n<\/ul>\n\n\n\n<p>Tato metoda je vysp\u011bl\u00e1 a \u0161iroce roz\u0161\u00ed\u0159en\u00e1 ve v\u00fdrobn\u00e1ch polovodi\u010d\u016f.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">2.2 Laserov\u00e9 d\u011blen\u00ed desti\u010dek<\/h2>\n\n\n\n<p>Laserov\u00e9 dicing pou\u017e\u00edv\u00e1 vysoce fokusovan\u00fd laserov\u00fd paprsek (nanosekundov\u00e9, pikosekundov\u00e9 nebo femtosekundov\u00e9 pulzy) k \u00faprav\u011b nebo odstran\u011bn\u00ed materi\u00e1lu.<\/p>\n\n\n\n<p>Mezi b\u011b\u017en\u00e9 mechanismy pat\u0159\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li><strong>Laserov\u00e1 ablace<\/strong>: p\u0159\u00edm\u00e9 odpa\u0159ov\u00e1n\u00ed materi\u00e1lu<\/li>\n\n\n\n<li><strong>Skryt\u00e9 kr\u00e1jen\u00ed na kostky<\/strong>: \u00faprava podpovrchov\u00fdch vrstev s n\u00e1sledn\u00fdm \u0159\u00edzen\u00fdm lomem<\/li>\n\n\n\n<li><strong>Odd\u011blen\u00ed tepeln\u00e9ho nam\u00e1h\u00e1n\u00ed<\/strong>: lokalizovan\u00fd oh\u0159ev vyvol\u00e1v\u00e1 \u0161\u00ed\u0159en\u00ed trhlin<\/li>\n<\/ul>\n\n\n\n<p>Na rozd\u00edl od mechanick\u00e9ho kontaktn\u00edho \u0159ez\u00e1n\u00ed je laserov\u00e9 dicing bezkontaktn\u00ed proces, kter\u00fd sni\u017euje mechanick\u00e9 nam\u00e1h\u00e1n\u00ed desti\u010dky.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">3. Srovn\u00e1n\u00ed proces\u016f<\/h2>\n\n\n\n<h3 class=\"wp-block-heading\">3.1 Mechanick\u00e9 nam\u00e1h\u00e1n\u00ed a po\u0161kozen\u00ed<\/h3>\n\n\n\n<p>Mechanick\u00e9 kr\u00e1jen\u00ed kostek zav\u00e1d\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Odlamov\u00e1n\u00ed hran<\/li>\n\n\n\n<li>Mikrotrhliny<\/li>\n\n\n\n<li>\u0160\u00ed\u0159en\u00ed nap\u011bt\u00ed v k\u0159ehk\u00fdch materi\u00e1lech<\/li>\n<\/ul>\n\n\n\n<p>Laserov\u00e9 kr\u00e1jen\u00ed sni\u017euje mechanickou s\u00edlu, ale m\u016f\u017ee:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Tepeln\u011b ovlivn\u011bn\u00e9 z\u00f3ny (HAZ)<\/li>\n\n\n\n<li>Mikrostrukturn\u00ed modifikace v z\u00e1vislosti na vlnov\u00e9 d\u00e9lce a d\u00e9lce pulzu<\/li>\n<\/ul>\n\n\n\n<p>U k\u0159ehk\u00fdch a vysoce cen\u011bn\u00fdch materi\u00e1l\u016f (nap\u0159. SiC desti\u010dek) je kontrola po\u0161kozen\u00ed kritick\u00e1.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">3.2 P\u0159esnost a \u0161\u00ed\u0159ka pro\u0159ezu<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Pro\u0159ez mechanick\u00e9 pily: obvykle 25-60 \u00b5m (z\u00e1vis\u00ed na tlou\u0161\u0165ce pilov\u00e9ho kotou\u010de).<\/li>\n\n\n\n<li>Pro\u0159ez laseru: v optimalizovan\u00fdch syst\u00e9mech lze sn\u00ed\u017eit na &lt;20 \u00b5m.<\/li>\n<\/ul>\n\n\n\n<p>Laserov\u00e1 technologie poskytuje vy\u0161\u0161\u00ed flexibilitu pro ultrajemn\u00e9 geometrie, zejm\u00e9na v pokro\u010dil\u00fdch obalech a za\u0159\u00edzen\u00edch MEMS.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">3.3 Kompatibilita materi\u00e1l\u016f<\/h3>\n\n\n\n<figure class=\"wp-block-table\"><table class=\"has-fixed-layout\"><thead><tr><th>Typ materi\u00e1lu<\/th><th>Mechanick\u00e1 pila<\/th><th>Laserov\u00e9 d\u011blen\u00ed<\/th><\/tr><\/thead><tbody><tr><td>K\u0159em\u00edk (Si)<\/td><td>\u0160iroce pou\u017e\u00edvan\u00e9<\/td><td>Zvy\u0161uj\u00edc\u00ed se pou\u017e\u00edv\u00e1n\u00ed<\/td><\/tr><tr><td>SiC<\/td><td>Obt\u00ed\u017en\u00e9 (opot\u0159eben\u00ed n\u00e1stroj\u016f)<\/td><td>Preferovan\u00e9 (pokro\u010dil\u00e9 syst\u00e9my)<\/td><\/tr><tr><td>Sapphire<\/td><td>Vysok\u00e9 riziko od\u0161t\u00edpnut\u00ed<\/td><td>Lep\u0161\u00ed kvalita hran<\/td><\/tr><tr><td>GaN<\/td><td>M\u00edrn\u00e9 po\u0161kozen\u00ed<\/td><td>Up\u0159ednost\u0148ovan\u00e9<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<p>Laserov\u00e9 dicing je st\u00e1le v\u00fdhodn\u011bj\u0161\u00ed pro tvrd\u00e9, k\u0159ehk\u00e9 a \u0161irokop\u00e1smov\u00e9 materi\u00e1ly.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">3.4 Propustnost a n\u00e1kladov\u00e1 efektivita<\/h3>\n\n\n\n<p>Mechanick\u00e9 kr\u00e1jen\u00ed na kostky:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Vysok\u00e1 propustnost<\/li>\n\n\n\n<li>Ni\u017e\u0161\u00ed n\u00e1klady na vybaven\u00ed<\/li>\n\n\n\n<li>Ekosyst\u00e9m vysp\u011bl\u00e9ho spot\u0159ebn\u00edho materi\u00e1lu (no\u017ee, chladic\u00ed kapalina)<\/li>\n<\/ul>\n\n\n\n<p>Laserov\u00e9 kr\u00e1jen\u00ed na kostky:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Vy\u0161\u0161\u00ed kapit\u00e1lov\u00e9 investice<\/li>\n\n\n\n<li>Ni\u017e\u0161\u00ed n\u00e1klady na spot\u0159ebn\u00ed materi\u00e1l<\/li>\n\n\n\n<li>V n\u011bkter\u00fdch konfigurac\u00edch potenci\u00e1ln\u011b pomalej\u0161\u00ed (v z\u00e1vislosti na strategii skenov\u00e1n\u00ed)<\/li>\n<\/ul>\n\n\n\n<p>P\u0159i velkos\u00e9riov\u00e9 v\u00fdrob\u011b k\u0159em\u00edku st\u00e1le p\u0159evl\u00e1d\u00e1 mechanick\u00e9 \u0159ez\u00e1n\u00ed kv\u016fli n\u00e1kladov\u00e9 efektivit\u011b.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">3.5 Opot\u0159eben\u00ed a \u00fadr\u017eba n\u00e1stroj\u016f<\/h3>\n\n\n\n<p>Mechanick\u00e9 syst\u00e9my trp\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Opot\u0159eben\u00ed \u010depele<\/li>\n\n\n\n<li>\u010cast\u00e1 v\u00fdm\u011bna<\/li>\n\n\n\n<li>Drift procesu v \u010dase<\/li>\n<\/ul>\n\n\n\n<p>Laserov\u00e9 syst\u00e9my:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>\u017d\u00e1dn\u00e9 fyzick\u00e9 opot\u0159eben\u00ed n\u00e1stroj\u016f<\/li>\n\n\n\n<li>Vy\u017eaduje pouze se\u0159\u00edzen\u00ed optiky a \u00fadr\u017ebu \u010do\u010dek<\/li>\n<\/ul>\n\n\n\n<p>D\u00edky tomu jsou laserov\u00e9 syst\u00e9my atraktivn\u00ed pro dlouhodobou stabilitu v p\u0159esn\u00e9 v\u00fdrob\u011b.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">4. Pr\u016fmyslov\u00e9 aplikace<\/h2>\n\n\n\n<h2 class=\"wp-block-heading\">4.1 Aplikace mechanick\u00e9ho d\u011blen\u00ed<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Obrazov\u00e9 sn\u00edma\u010de CMOS<\/li>\n\n\n\n<li>Pam\u011b\u0165ov\u00e9 \u010dipy (DRAM, NAND)<\/li>\n\n\n\n<li>Standardn\u00ed balen\u00ed k\u0159em\u00edkov\u00fdch integrovan\u00fdch obvod\u016f<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">4.2 <a href=\"https:\/\/www.zmsh-semitech.com\/cs\/kategorie-produktu\/laser-cutting\/\"><mark style=\"background-color:rgba(0, 0, 0, 0);color:#0693e3\" class=\"has-inline-color\">Laserov\u00e9 d\u011blen\u00ed<\/mark><\/a> Aplikace<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Nap\u00e1jec\u00ed za\u0159\u00edzen\u00ed SiC (elektromobily, nab\u00edjec\u00ed infrastruktura)<\/li>\n\n\n\n<li>LED a optoelektronick\u00e9 desti\u010dky<\/li>\n\n\n\n<li>Za\u0159\u00edzen\u00ed MEMS<\/li>\n\n\n\n<li>Pokro\u010dil\u00e9 balen\u00ed heterogenn\u00ed integrace<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">5. Shrnut\u00ed kl\u00ed\u010dov\u00fdch kompromis\u016f<\/h2>\n\n\n\n<p>Z technick\u00e9ho hlediska z\u00e1vis\u00ed volba mezi laserov\u00fdm a mechanick\u00fdm dicingem na vyv\u00e1\u017een\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>V\u00fdnosy versus n\u00e1klady<\/li>\n\n\n\n<li>Tvrdost materi\u00e1lu vs. pr\u016fchodnost<\/li>\n\n\n\n<li>P\u0159esnost vs. \u0161k\u00e1lovatelnost<\/li>\n<\/ul>\n\n\n\n<p>Mechanick\u00e9 dicing z\u016fst\u00e1v\u00e1 z\u00e1kladem b\u011b\u017en\u00e9 v\u00fdroby polovodi\u010d\u016f, zat\u00edmco laserov\u00e9 dicing se rychle roz\u0161i\u0159uje v oblasti pokro\u010dil\u00fdch materi\u00e1l\u016f a vysoce hodnotn\u00fdch aplikac\u00ed.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">6. Budouc\u00ed v\u00fdvojov\u00e9 trendy<\/h2>\n\n\n\n<p>V\u00fdvoj singulace oplatek ur\u010duje n\u011bkolik trend\u016f:<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">6.1 Hybridn\u00ed kostkovac\u00ed syst\u00e9my<\/h3>\n\n\n\n<p>N\u011bkte\u0159\u00ed v\u00fdrobci kombinuj\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>P\u0159edpisov\u00e1n\u00ed laserem + mechanick\u00e9 l\u00e1m\u00e1n\u00ed<\/li>\n\n\n\n<li>Laserov\u00e9 dr\u00e1\u017ekov\u00e1n\u00ed + povrchov\u00e1 \u00faprava ost\u0159\u00ed<\/li>\n<\/ul>\n\n\n\n<p>T\u00edm se zlep\u0161uje v\u00fdt\u011b\u017enost i pr\u016fchodnost.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">6.2 Ultrakr\u00e1tk\u00e9 pulzn\u00ed lasery<\/h3>\n\n\n\n<p>Femtosekundov\u00e9 laserov\u00e9 syst\u00e9my v\u00fdrazn\u011b sni\u017euj\u00ed tepeln\u011b ovlivn\u011bn\u00e9 z\u00f3ny, co\u017e umo\u017e\u0148uje:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>\u010cist\u0161\u00ed okraje<\/li>\n\n\n\n<li>Sn\u00ed\u017een\u00ed po\u010dtu mikrotrhlin<\/li>\n\n\n\n<li>Zv\u00fd\u0161en\u00e1 spolehlivost SiC a saf\u00edrov\u00fdch desti\u010dek<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">6.3 V\u00fdzvy spojen\u00e9 s 300mm desti\u010dkami<\/h3>\n\n\n\n<p>S rostouc\u00ed velikost\u00ed desti\u010dek:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Mechanick\u00e9 rozlo\u017een\u00ed nap\u011bt\u00ed je slo\u017eit\u011bj\u0161\u00ed<\/li>\n\n\n\n<li>Kontrola deformace je kritick\u00e1<\/li>\n\n\n\n<li>Laserov\u00e1 p\u0159esnost je st\u00e1le cenn\u011bj\u0161\u00ed<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">7. Z\u00e1v\u011br<\/h2>\n\n\n\n<p>Laserov\u00e9 dicing a mechanick\u00e9 \u0159ez\u00e1n\u00ed p\u0159edstavuj\u00ed dva z\u00e1sadn\u011b odli\u0161n\u00e9 technick\u00e9 p\u0159\u00edstupy k singulaci wafer\u016f.<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Mechanick\u00e9 pily vynikaj\u00ed n\u00e1kladovou efektivitou a velkoobjemovou v\u00fdrobou k\u0159em\u00edku<\/li>\n\n\n\n<li>Laserov\u00e9 dicing vynik\u00e1 p\u0159esnost\u00ed, flexibilitou materi\u00e1lu a pokro\u010dil\u00fdmi polovodi\u010dov\u00fdmi aplikacemi<\/li>\n<\/ul>\n\n\n\n<p>Tyto technologie se vz\u00e1jemn\u011b zcela nenahrazuj\u00ed, ale st\u00e1le \u010dast\u011bji koexistuj\u00ed ve vz\u00e1jemn\u011b se dopl\u0148uj\u00edc\u00edm v\u00fdrobn\u00edm ekosyst\u00e9mu, kter\u00fd je poh\u00e1n\u011bn inovacemi materi\u00e1l\u016f a miniaturizac\u00ed za\u0159\u00edzen\u00ed.<\/p>","protected":false},"excerpt":{"rendered":"<p>1. Introduction Wafer dicing (also called wafer singulation) is a critical step in semiconductor manufacturing, where processed silicon or compound semiconductor wafers are separated into individual dies. As device geometries shrink and materials diversify\u2014such as silicon carbide (SiC), gallium nitride (GaN), and sapphire\u2014the choice of dicing technology becomes increasingly important. Two dominant approaches are widely 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