{"id":2112,"date":"2026-04-03T05:44:04","date_gmt":"2026-04-03T05:44:04","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?p=2112"},"modified":"2026-04-03T05:44:13","modified_gmt":"2026-04-03T05:44:13","slug":"silicon-carbide-sic-epitaxy-equipment-and-industry-overview","status":"publish","type":"post","link":"https:\/\/www.zmsh-semitech.com\/cs\/silicon-carbide-sic-epitaxy-equipment-and-industry-overview\/","title":{"rendered":"Za\u0159\u00edzen\u00ed pro epitaxi karbidu k\u0159em\u00edku (SiC) a p\u0159ehled pr\u016fmyslu"},"content":{"rendered":"<p>Polovodi\u010dovou epitax\u00ed se rozum\u00ed proces p\u011bstov\u00e1n\u00ed monokrystalick\u00fdch tenk\u00fdch vrstev na substr\u00e1tech z k\u0159em\u00edku nebo karbidu k\u0159em\u00edku (SiC). Epitaxn\u00ed vrstva m\u00e1 stejnou krystalovou orientaci jako substr\u00e1t a m\u016f\u017ee b\u00fdt vyp\u011bstov\u00e1na bu\u010f ze stejn\u00e9ho materi\u00e1lu (homoepitaxe), nebo z r\u016fzn\u00fdch materi\u00e1l\u016f (heteroepitaxe). U vysokofrekven\u010dn\u00edch a vysoce v\u00fdkonn\u00fdch za\u0159\u00edzen\u00ed pom\u00e1h\u00e1 epitaxn\u00ed r\u016fst optimalizovat v\u00fdkon za\u0159\u00edzen\u00ed: epitaxn\u00ed vrstvy s vysokou rezistivitou zaji\u0161\u0165uj\u00ed vysok\u00e9 pr\u016frazn\u00e9 nap\u011bt\u00ed, zat\u00edmco substr\u00e1ty s n\u00edzkou rezistivitou sni\u017euj\u00ed s\u00e9riov\u00fd odpor, \u010d\u00edm\u017e sni\u017euj\u00ed satura\u010dn\u00ed nap\u011bt\u00ed. Epitaxn\u00ed vrstvy mohou b\u00fdt dopov\u00e1ny jako typ P nebo N a vytv\u00e1\u0159ej\u00ed p\u0159echody PN, kter\u00e9 umo\u017e\u0148uj\u00ed jednosm\u011brn\u00fd tok proudu a rektifikaci. Epitaxe SiC se \u0161iroce uplat\u0148uje ve v\u00fdkonov\u00e9 elektronice, radiofrekven\u010dn\u00edch (RF) za\u0159\u00edzen\u00edch a optoelektronick\u00fdch aplikac\u00edch.<\/p>\n\n\n\n<figure class=\"wp-block-image aligncenter size-full\"><img fetchpriority=\"high\" decoding=\"async\" width=\"1000\" height=\"1000\" src=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Split-Type-Vertical-Airflow-SiC-Epitaxy-Equipment-for-68-Epi-Wafers-3-1.png\" alt=\"\" class=\"wp-image-2091\" srcset=\"https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Split-Type-Vertical-Airflow-SiC-Epitaxy-Equipment-for-68-Epi-Wafers-3-1.png 1000w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Split-Type-Vertical-Airflow-SiC-Epitaxy-Equipment-for-68-Epi-Wafers-3-1-300x300.png 300w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Split-Type-Vertical-Airflow-SiC-Epitaxy-Equipment-for-68-Epi-Wafers-3-1-150x150.png 150w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Split-Type-Vertical-Airflow-SiC-Epitaxy-Equipment-for-68-Epi-Wafers-3-1-768x768.png 768w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Split-Type-Vertical-Airflow-SiC-Epitaxy-Equipment-for-68-Epi-Wafers-3-1-12x12.png 12w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Split-Type-Vertical-Airflow-SiC-Epitaxy-Equipment-for-68-Epi-Wafers-3-1-600x600.png 600w, https:\/\/www.zmsh-semitech.com\/wp-content\/uploads\/2026\/04\/Split-Type-Vertical-Airflow-SiC-Epitaxy-Equipment-for-68-Epi-Wafers-3-1-100x100.png 100w\" sizes=\"(max-width: 1000px) 100vw, 1000px\" \/><\/figure>\n\n\n\n<h3 class=\"wp-block-heading\">1. Pr\u016fmyslov\u00fd \u0159et\u011bzec SiC a rozd\u011blen\u00ed hodnot<\/h3>\n\n\n\n<p>Pr\u016fmyslov\u00fd \u0159et\u011bzec SiC za\u0159\u00edzen\u00ed se skl\u00e1d\u00e1 ze t\u0159\u00ed hlavn\u00edch segment\u016f: substr\u00e1tu, epitaxe a v\u00fdroby za\u0159\u00edzen\u00ed (n\u00e1vrh, v\u00fdroba a balen\u00ed). F\u00e1ze substr\u00e1tu a epitaxe p\u0159edstavuj\u00ed p\u0159ibli\u017en\u011b 70% hodnotov\u00e9ho \u0159et\u011bzce, zat\u00edmco n\u00e1sledn\u00e9 zpracov\u00e1n\u00ed za\u0159\u00edzen\u00ed p\u0159edstavuje pouze 30%. To je v kontrastu s b\u011b\u017en\u00fdmi k\u0159em\u00edkov\u00fdmi za\u0159\u00edzen\u00edmi, kde v\u011bt\u0161inu v\u00fdrobn\u00edch n\u00e1klad\u016f tvo\u0159\u00ed zpracov\u00e1n\u00ed po v\u00fdrob\u011b. Vysok\u00e1 koncentrace hodnoty p\u0159ed v\u00fdrobou zd\u016fraz\u0148uje strategick\u00fd v\u00fdznam technologi\u00ed substr\u00e1tu a epitaxe.<\/p>\n\n\n\n<p><strong>Segment substr\u00e1tu<\/strong> zahrnuje r\u016fst krystal\u016f, kr\u00e1jen\u00ed pl\u00e1tk\u016f, brou\u0161en\u00ed a le\u0161t\u011bn\u00ed. R\u016fstu krystal\u016f lze dos\u00e1hnout pomoc\u00ed fyzik\u00e1ln\u00edho transportu par (PVT), vysokoteplotn\u00ed chemick\u00e9 depozice z par (HTCVD) nebo epitaxe v kapaln\u00e9 f\u00e1zi (LPE). P\u0159i kr\u00e1jen\u00ed desti\u010dek se pou\u017e\u00edvaj\u00ed dr\u00e1tov\u00e9 pily, diamantov\u00fd dr\u00e1t, laser nebo metody studen\u00e9 separace, zat\u00edmco chemick\u00e9 mechanick\u00e9 le\u0161t\u011bn\u00ed (CMP) zaji\u0161\u0165uje rovn\u00e9 povrchy bez defekt\u016f vhodn\u00e9 pro epitaxn\u00ed r\u016fst.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">2. Proces v\u00fdroby SiC substr\u00e1tu<\/h3>\n\n\n\n<ol class=\"wp-block-list\">\n<li><strong>R\u016fst krystal\u016f:<\/strong>\n<ul class=\"wp-block-list\">\n<li><strong>PVT:<\/strong> Hlavn\u00ed metoda r\u016fstu krystal\u016f SiC. Za\u0159\u00edzen\u00ed je relativn\u011b jednoduch\u00e9, provozn\u00ed n\u00e1klady jsou n\u00edzk\u00e9 a \u0159\u00edzen\u00ed procesu je jednoduch\u00e9.<\/li>\n\n\n\n<li><strong>HTCVD:<\/strong> Produkuje krystaly vysok\u00e9 \u010distoty, ale m\u00e1 pomalej\u0161\u00ed r\u016fst, ni\u017e\u0161\u00ed v\u00fdt\u011b\u017enost a vy\u0161\u0161\u00ed n\u00e1klady.<\/li>\n\n\n\n<li><strong>LPE:<\/strong> Vytv\u00e1\u0159\u00ed vysoce kvalitn\u00ed krystaly s n\u00edzk\u00fdm po\u010dtem defekt\u016f, ale rychlost r\u016fstu a velikost jsou omezen\u00e9.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Kr\u00e1jen\u00ed oplatek:<\/strong>\n<ul class=\"wp-block-list\">\n<li><strong>Dr\u00e1tov\u00e9 pily:<\/strong> Standardn\u00ed metoda s vysokou v\u00fdt\u011b\u017enost\u00ed a n\u00edzk\u00fdmi n\u00e1klady.<\/li>\n\n\n\n<li><strong>Diamantov\u00fd dr\u00e1t a laserov\u00e9 \u0159ez\u00e1n\u00ed:<\/strong> Nab\u00edz\u00ed vy\u0161\u0161\u00ed \u00fa\u010dinnost, ni\u017e\u0161\u00ed ztr\u00e1ty materi\u00e1lu a ekologick\u00e9 v\u00fdhody.<\/li>\n\n\n\n<li><strong>Odd\u011blen\u00ed za studena:<\/strong> Vyu\u017e\u00edv\u00e1 vnit\u0159n\u00ed pnut\u00ed materi\u00e1lu k odd\u011blen\u00ed desti\u010dek s minim\u00e1ln\u00edmi ztr\u00e1tami.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Brou\u0161en\u00ed a le\u0161t\u011bn\u00ed:<\/strong>\n<ul class=\"wp-block-list\">\n<li><strong>CMP:<\/strong> Hlavn\u00ed metoda pro dosa\u017een\u00ed vysoce ploch\u00fdch povrch\u016f desti\u010dek bez defekt\u016f, kter\u00e9 jsou rozhoduj\u00edc\u00ed pro vysoce kvalitn\u00ed epitaxi.<\/li>\n<\/ul>\n<\/li>\n<\/ol>\n\n\n\n<h3 class=\"wp-block-heading\">3. Epitaxn\u00ed procesy a za\u0159\u00edzen\u00ed<\/h3>\n\n\n\n<p>Epitaxn\u00ed r\u016fst je kritick\u00fdm krokem p\u0159i v\u00fdrob\u011b SiC za\u0159\u00edzen\u00ed. Na rozd\u00edl od b\u011b\u017en\u00fdch k\u0159em\u00edkov\u00fdch za\u0159\u00edzen\u00ed nelze SiC za\u0159\u00edzen\u00ed zpracov\u00e1vat p\u0159\u00edmo na substr\u00e1tu. P\u0159ed v\u00fdrobou za\u0159\u00edzen\u00ed mus\u00ed b\u00fdt na substr\u00e1tu vyp\u011bstov\u00e1na vysoce kvalitn\u00ed monokrystalick\u00e1 epitaxn\u00ed vrstva.<\/p>\n\n\n\n<ol class=\"wp-block-list\">\n<li><strong>Typy epitaxe:<\/strong>\n<ul class=\"wp-block-list\">\n<li><strong>Homoepitaxy:<\/strong> P\u011bstov\u00e1n\u00ed SiC na vodiv\u00fdch substr\u00e1tech SiC, kter\u00e9 se pou\u017e\u00edvaj\u00ed pro n\u00edzkov\u00fdkonn\u00e1 za\u0159\u00edzen\u00ed, RF a optoelektronick\u00e9 aplikace.<\/li>\n\n\n\n<li><strong>Heteroepitaxe:<\/strong> P\u011bstov\u00e1n\u00ed GaN na poloizola\u010dn\u00edch substr\u00e1tech SiC, kter\u00e9 se pou\u017e\u00edvaj\u00ed pro vysoce v\u00fdkonn\u00e1 za\u0159\u00edzen\u00ed.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Epitaxn\u00ed za\u0159\u00edzen\u00ed:<\/strong>\n<ul class=\"wp-block-list\">\n<li><strong>CVD (Chemical Vapor Deposition):<\/strong> Plynn\u00e9 prekurzory reaguj\u00ed na zah\u0159\u00e1t\u00fdch substr\u00e1tech SiC za \u00fa\u010delem depozice epitaxn\u00edch vrstev.<\/li>\n\n\n\n<li><strong>MOCVD (Metal-Organic CVD):<\/strong> Pou\u017e\u00edv\u00e1 kovov\u011b-organick\u00e9 prekurzory, kter\u00e9 umo\u017e\u0148uj\u00ed depozici p\u0159i ni\u017e\u0161\u00edch teplot\u00e1ch a nanesen\u00ed ultratenk\u00fdch vrstev pro slo\u017eit\u00e9 struktury.<\/li>\n\n\n\n<li><strong>LPE:<\/strong> Zdrojov\u00e9 materi\u00e1ly se rozpust\u00ed v roztaven\u00e9m kovov\u00e9m rozpou\u0161t\u011bdle a po ochlazen\u00ed se nanesou na substr\u00e1t.<\/li>\n\n\n\n<li><strong>MBE (Molecular Beam Epitaxy):<\/strong> Nan\u00e1\u0161\u00ed atom\u00e1rn\u00ed vrstvy v ultravysok\u00e9m vakuu pro p\u0159esnou kontrolu tlou\u0161\u0165ky a slo\u017een\u00ed vrstvy.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Post-Epitaxy Wafer Dicing:<\/strong>\n<ul class=\"wp-block-list\">\n<li><strong>Mechanick\u00e9 kr\u00e1jen\u00ed na kostky<\/strong> a <strong>laserov\u00e9 kr\u00e1jen\u00ed na kostky<\/strong> jsou b\u011b\u017en\u00e9.<\/li>\n\n\n\n<li><strong>Laserov\u00e9 kr\u00e1jen\u00ed na kostky<\/strong> zam\u011b\u0159uje vysokoenergetick\u00e9 pulzy na mal\u00e9 plochy, aby sublimovaly nebo upravily materi\u00e1l, \u010d\u00edm\u017e se sni\u017euje ztr\u00e1ta pro\u0159ezu a tvorba trhlin.<\/li>\n<\/ul>\n<\/li>\n<\/ol>\n\n\n\n<h3 class=\"wp-block-heading\">4. Tr\u017en\u00ed a technologick\u00e9 trendy<\/h3>\n\n\n\n<p>Epitaxe SiC a v\u00fdroba substr\u00e1t\u016f z\u016fst\u00e1vaj\u00ed technologicky n\u00e1ro\u010dn\u00fdmi odv\u011btv\u00edmi sv\u011btov\u00e9ho polovodi\u010dov\u00e9ho pr\u016fmyslu. Budouc\u00ed trendy zahrnuj\u00ed:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Zv\u011bt\u0161en\u00ed velikosti substr\u00e1tu z 6 na 8 palc\u016f nebo v\u011bt\u0161\u00ed, aby se sn\u00ed\u017eily jednotkov\u00e9 n\u00e1klady.<\/li>\n\n\n\n<li>Zdokonalen\u00ed epitaxn\u00edho za\u0159\u00edzen\u00ed pro vysokou p\u0159esnost, n\u00edzkou hustotu defekt\u016f a kontrolu atom\u00e1rn\u00edch vrstev pro spln\u011bn\u00ed po\u017eadavk\u016f na vysok\u00fd v\u00fdkon a vysokou frekvenci.<\/li>\n\n\n\n<li>Pokrok v technologi\u00edch dicingu sm\u011brem k bezkontaktn\u00edm, n\u00edzkoztr\u00e1tov\u00fdm laserov\u00fdm metod\u00e1m a metod\u00e1m separace za studena.<\/li>\n\n\n\n<li>Podpora nez\u00e1vislosti na dom\u00e1c\u00edm a celosv\u011btov\u00e9m vybaven\u00ed, zejm\u00e9na v oblasti epitaxn\u00edch pec\u00ed a vysoce p\u0159esn\u00fdch syst\u00e9m\u016f pro dicing.<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">5. Z\u00e1v\u011br<\/h3>\n\n\n\n<p><a href=\"https:\/\/www.zmsh-semitech.com\/cs\/produkt\/integrated-vertical-airflow-sic-epitaxy-equipment-for-6-8-epi-wafers\/\"><mark style=\"background-color:rgba(0, 0, 0, 0)\" class=\"has-inline-color has-ast-global-color-1-color\">Za\u0159\u00edzen\u00ed pro epitaxi SiC <\/mark><\/a>je nezbytn\u00fd pro v\u00fdrobu vysoce v\u00fdkonn\u00fdch, r\u00e1diov\u00fdch a optoelektronick\u00fdch za\u0159\u00edzen\u00ed. Kvalita substr\u00e1t\u016f, epitaxi\u00e1ln\u00edch vrstev a za\u0159\u00edzen\u00ed pro dicing p\u0159\u00edmo ovliv\u0148uje v\u00fdkon za\u0159\u00edzen\u00ed a konkurenceschopnost pr\u016fmyslu. S rostouc\u00ed popt\u00e1vkou po vysoce v\u00fdkonn\u00fdch za\u0159\u00edzen\u00edch bude dal\u0161\u00ed rozvoj a lokalizace epitaxn\u00ed technologie hr\u00e1t v hodnotov\u00e9m \u0159et\u011bzci polovodi\u010d\u016f st\u00e1le d\u016fle\u017eit\u011bj\u0161\u00ed roli.<\/p>\n\n\n\n<p><\/p>","protected":false},"excerpt":{"rendered":"<p>Semiconductor epitaxy refers to the process of growing single-crystal thin films on silicon or silicon carbide (SiC) substrates. The epitaxial layer shares the same crystal orientation as the substrate and can be grown using either the same material (homoepitaxy) or different materials (heteroepitaxy). For high-frequency and high-power devices, epitaxial growth helps optimize device performance: high-resistivity [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":2091,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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