{"id":1930,"date":"2026-03-20T05:44:51","date_gmt":"2026-03-20T05:44:51","guid":{"rendered":"https:\/\/www.zmsh-semitech.com\/?p=1930"},"modified":"2026-03-20T05:44:59","modified_gmt":"2026-03-20T05:44:59","slug":"next-generation-semiconductor-processing-equipment-trends-in-sic-gan-and-composite-materials","status":"publish","type":"post","link":"https:\/\/www.zmsh-semitech.com\/cs\/next-generation-semiconductor-processing-equipment-trends-in-sic-gan-and-composite-materials\/","title":{"rendered":"Za\u0159\u00edzen\u00ed pro zpracov\u00e1n\u00ed polovodi\u010d\u016f nov\u00e9 generace: a kompozitn\u00edch materi\u00e1l\u016f: trendy v oblasti SiC, GaN a kompozitn\u00edch materi\u00e1l\u016f"},"content":{"rendered":"

1. \u00davod<\/h3>\n\n\n\n

S rychl\u00fdm rozvojem elektromobil\u016f, obnoviteln\u00fdch zdroj\u016f energie, komunikace 5G a vysoce v\u00fdkonn\u00fdch po\u010d\u00edta\u010d\u016f jsou tradi\u010dn\u00ed polovodi\u010de na b\u00e1zi k\u0159em\u00edku st\u00e1le v\u00edce omezeny v prost\u0159ed\u00ed s vysok\u00fdm v\u00fdkonem, vysokou frekvenc\u00ed a vysokou teplotou. Karbid k\u0159em\u00edku (SiC) a nitrid galia (GaN), jako\u017eto polovodi\u010dov\u00e9 materi\u00e1ly s \u0161irok\u00fdm p\u00e1smem, nab\u00edzej\u00ed vysok\u00e9 pr\u016frazn\u00e9 nap\u011bt\u00ed, vynikaj\u00edc\u00ed tepelnou vodivost a vynikaj\u00edc\u00ed vysokofrekven\u010dn\u00ed v\u00fdkon, co\u017e z nich \u010din\u00ed z\u00e1kladn\u00ed materi\u00e1ly pro polovodi\u010dov\u00e9 sou\u010d\u00e1stky p\u0159\u00ed\u0161t\u00ed generace.<\/p>\n\n\n\n

Soub\u011b\u017en\u011b s v\u00fdvojem materi\u00e1l\u016f se vyv\u00edj\u00ed i za\u0159\u00edzen\u00ed pro zpracov\u00e1n\u00ed polovodi\u010d\u016f, aby bylo mo\u017en\u00e9 \u010delit v\u00fdzv\u00e1m, kter\u00e9 tyto nov\u00e9 materi\u00e1ly p\u0159in\u00e1\u0161ej\u00ed. Tento \u010dl\u00e1nek p\u0159in\u00e1\u0161\u00ed v\u011bdeck\u00fd p\u0159ehled trend\u016f, kl\u00ed\u010dov\u00fdch vlastnost\u00ed a budouc\u00edch sm\u011br\u016f v oblasti zpracov\u00e1n\u00ed polovodi\u010d\u016f nov\u00e9 generace.<\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

2. Za\u0159\u00edzen\u00ed na zpracov\u00e1n\u00ed SiC desti\u010dek<\/h3>\n\n\n\n

Desky SiC jsou extr\u00e9mn\u011b tvrd\u00e9, tepeln\u011b vodiv\u00e9 a k\u0159ehk\u00e9, co\u017e klade vysok\u00e9 n\u00e1roky na zpracovatelsk\u00e9 za\u0159\u00edzen\u00ed. Typick\u00e1 za\u0159\u00edzen\u00ed pro v\u00fdrobu SiC desti\u010dek zahrnuj\u00ed:<\/p>\n\n\n\n

    \n
  1. Vysokoteplotn\u00ed vysokotlak\u00e9 (PVT) pece<\/strong> - pro p\u011bstov\u00e1n\u00ed vysoce kvalitn\u00edch monokrystalick\u00fdch ingot\u016f SiC.<\/li>\n\n\n\n
  2. P\u0159esn\u00e9 dr\u00e1tov\u00e9 pily<\/mark><\/a><\/strong> - pomoc\u00ed diamantov\u00e9ho dr\u00e1tu nebo laserov\u00e9ho \u0159ez\u00e1n\u00ed, aby byla zaji\u0161t\u011bna tlou\u0161\u0165ka a rozm\u011brov\u00e1 p\u0159esnost pl\u00e1tk\u016f.<\/li>\n\n\n\n
  3. Za\u0159\u00edzen\u00ed pro chemicko-mechanick\u00e9 le\u0161t\u011bn\u00ed (CMP)<\/strong> - pro planarizaci povrchu desti\u010dek, minimalizaci defekt\u016f a drsnosti povrchu.<\/li>\n\n\n\n
  4. Laserov\u00e9 leptac\u00ed a zna\u010dkovac\u00ed syst\u00e9my<\/strong> - pro mikrov\u00fdrobu v energetick\u00fdch za\u0159\u00edzen\u00edch a optoelektronick\u00fdch aplikac\u00edch.<\/li>\n<\/ol>\n\n\n\n

    S p\u0159echodem na v\u011bt\u0161\u00ed pr\u016fm\u011bry desti\u010dek (nap\u0159. 200 mm a 300 mm) se vysoce p\u0159esn\u00e9 \u0159ez\u00e1n\u00ed, le\u0161t\u011bn\u00ed a automatizovan\u00e9 syst\u00e9my pro manipulaci s desti\u010dkami st\u00e1vaj\u00ed prioritami pr\u016fmyslu.<\/p>\n\n\n\n

    3. Za\u0159\u00edzen\u00ed pro zpracov\u00e1n\u00ed polovodi\u010d\u016f GaN<\/h3>\n\n\n\n

    Nitrid galia (GaN) se pou\u017e\u00edv\u00e1 p\u0159edev\u0161\u00edm ve vysokofrekven\u010dn\u00edch r\u00e1diov\u00fdch za\u0159\u00edzen\u00edch a v\u00fdkonov\u00e9 elektronice. Desti\u010dky GaN se \u010dasto p\u011bstuj\u00ed na k\u0159em\u00edkov\u00fdch nebo saf\u00edrov\u00fdch substr\u00e1tech, tak\u017ee zpracovatelsk\u00e9 za\u0159\u00edzen\u00ed mus\u00ed b\u00fdt p\u0159izp\u016fsobeno heterogenn\u00edm substr\u00e1t\u016fm:<\/p>\n\n\n\n

      \n
    • Syst\u00e9my MOCVD (Metal-Organic Chemical Vapor Deposition)<\/strong> - z\u00e1kladn\u00ed za\u0159\u00edzen\u00ed pro r\u016fst tenk\u00fdch vrstev GaN, kter\u00e9 kontroluje tlou\u0161\u0165ku a p\u0159esnost dopov\u00e1n\u00ed.<\/li>\n\n\n\n
    • Such\u00e9 leptac\u00ed stroje ICP<\/strong> - pro vzorov\u00e1n\u00ed mikrostruktury s vysok\u00fdm pom\u011brem stran a hladk\u00fdmi bo\u010dnicemi.<\/li>\n\n\n\n
    • Automatizovan\u00e9 syst\u00e9my pro manipulaci s oplatkami<\/strong> - sn\u00ed\u017een\u00ed po\u010dtu zlom\u016f a zlep\u0161en\u00ed v\u00fdt\u011b\u017enosti k\u0159ehk\u00fdch desti\u010dek GaN.<\/li>\n<\/ul>\n\n\n\n

      Trendy v oblasti za\u0159\u00edzen\u00ed GaN se zam\u011b\u0159uj\u00ed na malos\u00e9riovou vysoce p\u0159esnou v\u00fdrobu, n\u00edzkou m\u00edru defekt\u016f a kompatibilitu s v\u00edce substr\u00e1ty, aby spl\u0148ovaly pot\u0159eby z\u00e1kladnov\u00fdch stanic 5G a aplikac\u00ed pro rychl\u00e9 nab\u00edjen\u00ed elektromobil\u016f.<\/p>\n\n\n\n

      4. Kompozitn\u00ed materi\u00e1ly a za\u0159\u00edzen\u00ed nov\u00e9 generace<\/h3>\n\n\n\n

      Za hranice SiC a GaN, kompozitn\u00ed polovodi\u010dov\u00e9 materi\u00e1ly<\/strong> (nap\u0159. hybridn\u00ed za\u0159\u00edzen\u00ed SiC\/GaN, v\u00edcevrstv\u00e9 heterostruktury). Kompozitn\u00ed materi\u00e1ly p\u0159edstavuj\u00ed pro za\u0159\u00edzen\u00ed nov\u00e9 v\u00fdzvy:<\/p>\n\n\n\n

        \n
      1. Kompatibilita s v\u00edce materi\u00e1ly<\/strong> - za\u0159\u00edzen\u00ed mus\u00ed zpracov\u00e1vat materi\u00e1ly s r\u016fznou tvrdost\u00ed a koeficientem tepeln\u00e9 rozta\u017enosti ve stejn\u00e9m pracovn\u00edm postupu.<\/li>\n\n\n\n
      2. Vysoce p\u0159esn\u00e9 zarovn\u00e1n\u00ed a balen\u00ed<\/strong> - pro heterogenn\u00ed integraci je rozhoduj\u00edc\u00ed vyrovn\u00e1n\u00ed v nanorozm\u011brech.<\/li>\n\n\n\n
      3. Pokro\u010dil\u00e9 monitorov\u00e1n\u00ed a \u0159\u00edzen\u00ed<\/strong> - online kontrola, vizu\u00e1ln\u00ed rozpozn\u00e1v\u00e1n\u00ed AI a kontrola teploty zaji\u0161\u0165uj\u00ed stabilitu procesu.<\/li>\n<\/ol>\n\n\n\n

        Tyto po\u017eadavky vedou v\u00fdvoj za\u0159\u00edzen\u00ed k modul\u00e1rn\u00edm, inteligentn\u00edm a kompozitn\u00edm materi\u00e1l\u016fm kompatibiln\u00edm konstrukc\u00edm.<\/p>\n\n\n\n

        5. Automatizace a inteligentn\u00ed za\u0159\u00edzen\u00ed<\/h3>\n\n\n\n

        Budouc\u00ed v\u00fdvoj polovodi\u010dov\u00fdch za\u0159\u00edzen\u00ed klade d\u016fraz na automatizaci a inteligenci:<\/p>\n\n\n\n

          \n
        • Pr\u016fmyslov\u00e1 integrace 4.0<\/strong> - sledov\u00e1n\u00ed desti\u010dek a parametr\u016f zpracov\u00e1n\u00ed v re\u00e1ln\u00e9m \u010dase umo\u017e\u0148uje optimalizaci zalo\u017eenou na datech.<\/li>\n\n\n\n
        • \u0158\u00edzen\u00ed s pomoc\u00ed um\u011bl\u00e9 inteligence<\/strong> - strojov\u00e9 u\u010den\u00ed optimalizuje \u0159ezn\u00e9 dr\u00e1hy, le\u0161tic\u00ed tlaky a parametry nan\u00e1\u0161en\u00ed, \u010d\u00edm\u017e zvy\u0161uje v\u00fdt\u011b\u017enost.<\/li>\n\n\n\n
        • Robotick\u00e9 manipula\u010dn\u00ed syst\u00e9my<\/strong> - omezit manu\u00e1ln\u00ed z\u00e1sahy, zv\u00fd\u0161it bezpe\u010dnost a zajistit opakovatelnost, zejm\u00e9na u k\u0159ehk\u00fdch SiC a GaN desti\u010dek.<\/li>\n<\/ul>\n\n\n\n

          Chytr\u00e1 za\u0159\u00edzen\u00ed se stanou standardem p\u0159i v\u00fdrob\u011b \u0161pi\u010dkov\u00fdch polovodi\u010d\u016f a budou vyva\u017eovat produktivitu, p\u0159esnost a n\u00e1klady.<\/p>\n\n\n\n

          6. V\u00fdhled aplikac\u00ed<\/h3>\n\n\n\n
            \n
          • Elektrick\u00e1 vozidla a obnoviteln\u00e1 energie<\/strong> - V\u00fdkonov\u00e1 za\u0159\u00edzen\u00ed SiC v\u00fdrazn\u011b sni\u017euj\u00ed energetick\u00e9 ztr\u00e1ty a zlep\u0161uj\u00ed \u00fa\u010dinnost m\u011bni\u010de.<\/li>\n\n\n\n
          • 5G a RF komunikace<\/strong> - Za\u0159\u00edzen\u00ed GaN vynikaj\u00ed ve vysokofrekven\u010dn\u00edch a v\u00fdkonn\u00fdch aplikac\u00edch.<\/li>\n\n\n\n
          • Vysoce v\u00fdkonn\u00e1 v\u00fdpo\u010detn\u00ed technika a optoelektronika<\/strong> - kompozitn\u00ed materi\u00e1ly umo\u017e\u0148uj\u00ed miniaturizaci a vysokou integraci \u010dip\u016f.<\/li>\n<\/ul>\n\n\n\n

            S rostouc\u00ed popt\u00e1vkou se bude i nad\u00e1le vyv\u00edjet zpracovatelsk\u00e9 vybaven\u00ed, kter\u00e9 bude nab\u00edzet vysoce p\u0159esn\u00e1 a inteligentn\u00ed \u0159e\u0161en\u00ed na m\u00edru s n\u00edzk\u00fdm v\u00fdskytem vad.<\/p>\n\n\n\n

            7. Z\u00e1v\u011br<\/h3>\n\n\n\n

            Za\u0159\u00edzen\u00ed pro zpracov\u00e1n\u00ed polovodi\u010d\u016f nov\u00e9 generace se vyv\u00edj\u00ed kolem SiC, GaN a kompozitn\u00edch materi\u00e1l\u016f. Mezi hlavn\u00ed v\u00fdvojov\u00e9 trendy pat\u0159\u00ed:<\/p>\n\n\n\n

              \n
            • Vysoce p\u0159esn\u00e9 \u0159ez\u00e1n\u00ed a le\u0161t\u011bn\u00ed<\/li>\n\n\n\n
            • Kompatibilita s heterogenn\u00edmi a kompozitn\u00edmi materi\u00e1ly<\/li>\n\n\n\n
            • Inteligentn\u00ed automatizace a \u0159\u00edzen\u00ed s podporou um\u011bl\u00e9 inteligence<\/li>\n<\/ul>\n\n\n\n

              Investice do pokro\u010dil\u00e9ho zpracovatelsk\u00e9ho za\u0159\u00edzen\u00ed umo\u017e\u0148uj\u00ed v\u00fdrobc\u016fm polovodi\u010d\u016f maximalizovat v\u00fdkonnostn\u00ed v\u00fdhody nov\u00fdch materi\u00e1l\u016f a podporuj\u00ed v\u00fdvoj v\u00fdkonn\u011bj\u0161\u00edch, frekven\u010dn\u011b n\u00e1ro\u010dn\u011bj\u0161\u00edch a spolehliv\u011bj\u0161\u00edch za\u0159\u00edzen\u00ed. Dr\u017een\u00edm kroku s t\u011bmito technologick\u00fdmi trendy m\u016f\u017ee pr\u016fmysl urychlit inovace v oblasti elektromobil\u016f, komunikace 5G, vysoce v\u00fdkonn\u00fdch po\u010d\u00edta\u010d\u016f a dal\u0161\u00edch nov\u00fdch aplikac\u00ed. Spole\u010dnosti jako ZMSH poskytuj\u00ed \u0159e\u0161en\u00ed zpracov\u00e1n\u00ed na m\u00edru, kter\u00e1 v\u00fdrobc\u016fm pom\u00e1haj\u00ed efektivn\u011b optimalizovat v\u00fdrobu SiC a GaN desti\u010dek.<\/p>","protected":false},"excerpt":{"rendered":"

              1. Introduction With the rapid development of electric vehicles, renewable energy, 5G communication, and high-performance computing, traditional silicon-based semiconductors are increasingly limited in high-power, high-frequency, and high-temperature environments. Silicon carbide (SiC) and gallium nitride (GaN), as wide-bandgap semiconductor materials, offer high breakdown voltage, excellent thermal conductivity, and superior high-frequency performance, making them core materials for […]<\/p>\n","protected":false},"author":1,"featured_media":1931,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"footnotes":""},"categories":[24],"tags":[405,410,404,334,409,407,412,182,325,403,411,408,414,166,184,72,413,406],"class_list":["post-1930","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-industry-news","tag-5g-rf-devices","tag-ai-assisted-control","tag-chemical-mechanical-polishing-2","tag-cmp","tag-composite-semiconductor-materials","tag-electric-vehicle-power-devices","tag-gallium-nitride","tag-gan","tag-heterogeneous-integration","tag-high-precision-cutting","tag-icp-etching","tag-mocvd","tag-next-generation-semiconductor-equipment","tag-semiconductor-processing","tag-sic","tag-silicon-carbide","tag-smart-automation","tag-wafer-processing"],"_links":{"self":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts\/1930","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/comments?post=1930"}],"version-history":[{"count":1,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts\/1930\/revisions"}],"predecessor-version":[{"id":1932,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/posts\/1930\/revisions\/1932"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/media\/1931"}],"wp:attachment":[{"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/media?parent=1930"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/categories?post=1930"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.zmsh-semitech.com\/cs\/wp-json\/wp\/v2\/tags?post=1930"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}